Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals

Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150‐400 K on n‐type GaS_0.5Se_0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4 ×10¹⁷ and 4.1×10¹⁶ cm^‐3, respectively, and an electron effective mass of 0.41 m₀. The Hall mobility is limited by the electron‐phonon short‐range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron‐phonon short‐range interactions scattering mobility analysis reveals an electron‐phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Å.     

溶胶-凝胶法制备Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3体系无铅压电陶瓷的研究

采用溶胶-凝胶法制备(1-x)Na0.5Bi0.5 TiO3-xK0.5Bi0.5TiO3体系无铅压电陶瓷.XRD分析表明,用溶胶-凝胶法可以在650℃下合成具有钙钛矿结构的(1-x)Na0.5Bi0.5TiO3-xK0.5Bi0.5TiO3粉体,且在x=0.18～0.30之间存在三方-四方准同型相界(MPB).陶瓷的压电性能参数表明,该体系在MPB组成范围内具有最佳的压电性能:x=0.30时,压电常数d33达到最大值(d33=150 Pc·N-1),平面机电耦合系数kp与介电常数εH33T/ε0均在x=0.26时达到最大值,分别为36.7;和1107.     

Direct preparation of K0.5Na0.5NbO3 powders

K_0.5Na_0.5NbO₃ powders have been directly synthesized by an alternative solid–state method. Stoichimometric mixture of ammonium niobium oxalate and C₄H₄O₆KNa·4H₂O were calcined in temperature range from 500 to 800 °C for 3 h. The precursor and calcination products were characterized with respect to stoichiometry, purity, crystalline structure, particle size and powder morphology using X–ray diffraction (XRD), X‐ray fluorescence (XRF) spectrometer, scanning electron microscope (SEM), Fourier transform infrared (FTIR) spectra, thermogravimetric (TG) analysis, differential scanning calorimetry (DSC) and UV–Vis diffuse reflectance (UV–Vis) spectroscopy. XRD and XRF results reveal that stoichiometric K_0.5Na_0.5NbO₃ powders could be synthesized by the method. The particle size is about 68 nm for the precursor calcined at 500 °C according to XRD data, which is in good agreement with SEM data. The average band gap energy is estimated to be 3.18 eV by UV–vis diffuse reflectance spectra. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural analysis of amorphous Ge0.5Te0.5 by neutron diffraction

Neutron diffraction measurements have been made on a sputtered sample of amorphous Ge_0.5Te_0.5. Analysis of the radial distribution function derived from Fourier inversion of the measured structure factor gives a nearest neighbor coordination number n = 2.49. This result, compared with coordination models proposed for this composition, favors the chemically ordered 3t2-3 model (where each Ge and Te atom is threefold coordinated by the other one) analogous to a-As with n = 2.78 over the 4-2 models with n > 3.20. More detailed analysis including second neighbor atoms confirms the ordered threefold a-As model.     

Bi(Zn0.5Ti0.5)O3对Bi0.5Na0.5TiO3基陶瓷相结构及弛豫性的影响

采用固相反应合成法制备了(1-x)(0.96Bi0.5Na0.5TiO3-0.04BaTiO3)-xBi(Zn0.5 Ti0.5)O3陶瓷(x≤0.10).通过X射线衍射,介电温度谱等对该体系陶瓷的相结构及弛豫特性进行了研究.结果发现,该陶瓷在Bi(Zn0.5Ti05)O3加入量低于0.05时呈现纯钙钛矿结构.此外,随着Bi(Zn0.5Ti0.5)O3加入量的增加,其相结构由三方-四方共存向赝立方结构转变;同时,陶瓷的弥散因子上升,偶极子取向冻结活化能下降,表明BZT的加入明显地增加了0.96Bi0.5Na0.5TiO3-0.04 BaTiO3陶瓷的弛豫性.     

(Na0.5Bi0.5)TiO3-(K0.5Bi0.5)TiO3无铅铁电单晶的生长、结构与介电特性

采用高温自助熔剂法制备了(Na0.5Bi0.5) TiO3-(K0.5Bi0.5) TiO3(简称:NBT-KBT)无铅铁电单晶,晶体尺寸为5mm×6 mm×1 mm.利用X射线衍射(XRD)手段研究了NBT-KBT单晶的相结构,结果表明晶体样品为钙钛矿四方相结构.Raman散射结果也表明了NBT-KBT单晶的拉曼振动模式具有四方相结构特征.利用扫描电镜(SEM)和透射电镜(TEM)研究了单晶的表面形貌和微结构特征.另外,单晶介电常数随温度以及频率的变化关系显示单晶具有弛豫铁电体特性.     

Neutron and X-ray diffraction study of superstructure and localized magnetic moments in Cu0.5Fe0.5Cr2S4 and Cu0.5In0.5Cr2S4 compounds

The superstructure parameters for the Cu_0.5Fe_0.5Cr₂S₄ and Cu_0.5In_0.5Cr₂S₄ compounds have been determined by neutron and X-ray diffraction. The localized magnetic moments in different sublattices measured for Cu_0.5Fe_0.5Cr₂S₄ are equal to 3.06 ± 0.17 μB for Fe³⁺ ions in the A-site and 2.76 ± 0.22 μB for Cr³⁺ ions in the B-site (Cu⁺ possess no magnetic moment), which are much less than the magnetic moments for the ions in the purely ionic state.     

织构化K0.5Na0.5NbO3无铅压电陶瓷的性能研究

以分析纯Na2CO3、Bi2O3和Nb2O5为原料,以NaCl为熔盐,采用二次熔盐法和拓扑化学反应法合成各向异性片状NaNbO3粉体.以该片状NaNbO3粉体为模板品粒,以固相法合成的NaNbO3和KNbO3粉体为基料,采用流延工艺制备出较高取向度的织构化K0.5Na0.5NbO3(KNN)无铅压电陶瓷,系统研究了模板含量、烧结温度和保温时间等工艺参数对织构化KNN陶瓷显微结构和压电性能的影响规律.研究结果表明:随着模板含量的增加,陶瓷的取向度逐渐增加,当模板含量为15 wt;时,陶瓷的取向度可达0.69,当模板含量为10 wt;,1100 ℃下保温5 h烧结,可以获得具有一定织构度(f=0.58)的KNN陶瓷,并表现出优异的压电性能,d33=128 pC/ N.     

Structural study of the semimagnetic semiconductor Zn0.5Mn0.5In2Te4

The semimagnetic semiconductor alloy Zn_0.5Mn_0.5In₂Te₄ was refined from an X‐ray powder diffraction pattern using the Rietveld method. This compound crystallizes in the space group I42m (Nº 121), Z = 2, with unit cell parameters a = 6.1738(1) Å, c = 12.3572(4) Å, V = 471.00(2) Å3, c / a = 2.00. This material crystallizes in a stannite‐type structure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Gravitational Effects on Mixing and Growth Morphology of an In0.5Ga0.5 System

A mixing experiment of multicomponents melts was performed using a uniform temperature furnace in the Second International Microgravity Laboratories (IML-2) mission. Growth morphologies and Ga concentration profiles were analyzed for the samples with the compositional ratio of 0.5 In–0.5 Ga–1.0 Sb grown under microgravity and on earth. The sample with free surface grown under microgravity was nearly spherical in shape, except some parts with projections. Ga was dispersed homogeneously in the bulk because the mixing was enhanced by Marangoni convection due to the concentration gradient. On the other hand, the sample grown on earth was a double cylindrical shape with different diameters, and Ga concentration decreased from top to bottom, showing clearly the effect of gravity. Many needle crystals were formed in both space and earth samples due to rapid cooling. The average size of the needle crystals grown in space was larger than that of the earth sample.     

Crystal structure and magnetic properties of the LaCo0.5Fe0.5O3 perovskite

The magnetic and crystal structures of the LaCo_0.5Fe_0.5O₃ perovskite are investigated. It is established that the unit cell of this compound at room temperature is characterized by rhombohedral distortions. As the temperature decreases, the compound undergoes a structural phase transition from the rhombohedral phase to the orthorhombic phase in the temperature range 200–300 K. The LaCo_0.5Fe_0.5O₃ perovskite has an antiferromagnetic structure with the G _z spatial orientation of the antiferromagnetic vector. The magnetic properties of the LaCo_0.5Fe_0.5O₃ perovskite are interpreted within a model according to which the ground state of Co³⁺ ions is a low-spin state and the existence of the weak ferromagnetic component is associated with the exchange interactions between the Fe³⁺ ions.     

Sb掺杂K0.5Na0.5NbO3无铅压电陶瓷相结构和电学性能的研究

采用传统固相烧结法,在1060 ℃制备(K0.5Na0.5)Nb1-xSbxO3(KNNS,x=0、0.01、0.02、0.03和0.04)无铅压电陶瓷,研究了Sb掺杂对KNN陶瓷物相结构、微观形貌和电学性能的影响.研究结果表明:Sb可以取代钙钛矿结构中B位的Nb位置,Sb取代Nb的最大量为0.03≤x≤0.04,当x=0.04时产生杂相;通过XRD图谱分析表明,x=0时陶瓷为单一的正交相结构,0.02≤x≤0.03时为正交-四方相共存,x=0.04时转变为三方相结构.Sb的掺杂具有细化晶粒的作用,随着Sb含量的增加,晶粒平均尺寸减小,晶粒大小变得均匀,介电性能增强.     

共沉淀法制备Ba(Fe0.5 Nb0.5)O3纳米粉体

以廉价的Nb2O5为铌源,采用共沉淀法制备了纳米Ba(Fe0.5Nb0.5)O3粉体.用XRD、TG-DSC、FT-IR、SEM等测试手段分析了烧结温度、保温时间、体系温度、pH值等对前驱体粉体的物相、形貌及晶粒大小的影响,并对粉体的磁学性能进行了表征.结果表明:合成温度在950℃,体系温度在30℃和50℃均可获得纯相立方钙钛矿结构的Ba(Fe0.5 Nb0.5)O3粉体,保温时间和pH值对粉体相结构变化无影响.在体系温度为30℃,pH=10,前驱体粉体在950℃煅烧2h后获得颗粒尺寸约30 nm的Ba(Fe05Nb0.5)O3粉体,且粉体具有弱的铁磁性.     

Quasi‐two‐dimensional electrodeposition growth of Pb0.5Sn0.5 alloy

Electrodeposition of Pb_0.5Sn_0.5 alloy is carried out in a quasi‐2D electrochemical cell. As the growth proceeds the morphologies of the deposits transit from cake‐like to branched and finally to the compact morphology. We show that these morphological transitions arise from the changes in the transport mechanisms of the ions in the electrolyte cell. In addition, it is found that the current density on the growth interface can vary spontaneously due to the irregular shape of the deposit and the generation of hydrogen gas. It causes the formation of the complex microstructure with non‐uniform composition. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Si3N4-TiC0.5N0.5复相陶瓷的制备及切削性能研究

以TiC0.5N0.5粉为导电第二相,利用热压烧结制备了Si3N4-TiC0.5N0.5复相陶瓷.研究了不同含量TiC0.5N0.5对Si3N4陶瓷相组成、致密度、显微结构、力学性能、导电性能、切削性能及磨损机理的影响.结果表明:高温下TiC0.5N0.5与Si3N4具有良好稳定性,烧结后获得致密的Si3 N4-TiC0.5N0.5复相陶瓷;导电第二相的增加可以明显改善氮化硅陶瓷的电学性能,并且有助于提高Si3N4-TiC0.5N0.5复相陶瓷的硬度和断裂韧性,但不利于Si3 N4-TiC0.5N0.5复相陶瓷的抗弯强度;当含量超过25vol;时,硬度增幅变缓,断裂韧性下降;在高速切削过程中,随着切削时间增加,后刀面磨损增大,刀具切削温度增加;STCN20切削性能最好,当TiC0.5N0.5含量超过20vol;时会加剧刀具的磨损;Si3N4-TiC0.5N0.5复相陶瓷刀具的磨损机制主要是机械摩擦导致的磨粒磨损,并伴随少量的粘结磨损.     

水热法制备钛酸铋钠粉体及其生长机理研究

以钛酸四丁酯Ti(OC4H9)4和五水硝酸铋Bi(NO3)3·5H2O为原料,NaOH为矿化剂,通过水热法制备钛酸铋钠(Na0.5Bi0.5TiO3)粉体.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)对反应制备的粉体进行物相分析.结果表明,反应温度、反应时间及矿化剂浓度均是影响钛酸铋钠粉体制备的关键因素.利用JMA方程对其进行动力学计算分析,结果表明,在反应温度为120～ 180℃时,NBT颗粒的Avrami指数n随温度的升高而减小,而反应速率k则相反,反应活化能Ea为50.14 kJ·mol-1.     

含NiTi阻挡层的硅基(La0.5Sr0.5)CoO3/Pb(Zr0.4Ti0.6)O3/(La0.5Sr0.5)CoO3铁电电容器异质结

应用磁控溅射法制备的非晶NiTi薄膜作阻挡层,在Si (100)衬底上构造了(La0.5Sr0.5)CoO3/ Pb(Zr0.4Ti0.6)O3/(La0.5Sr0.5)CoO3(LSCO/PZT/LSCO)铁电电容器异质结,研究了Pb(Zr0.4Ti0.6)O3铁电薄膜的结构和物理性能.实验发现LSCO/PZT/LSCO铁电电容器具有良好的电学性能,在417kV/cm的驱动场强下,PZT铁电电容器具有较低的矫顽场强(125kV/cm)和较高的剩余极化强度(19.0μC/cm2),良好电容-电压特性(C-V)和保持特性,铁电电容器经过1010次反转后,极化强度没有明显下降,表明了非晶NiTi薄膜可以用作高密度硅基铁电存储器的扩散阻挡层.     

Er/Yb:Gd0.5Lu0.5VO4多晶原料的合成及表征

Er/Yb: Gd05Lu0.5VO4晶体用于人眼安全和超快调Q脉冲激光领域中,而生长该类晶体的原料需纯度高、成分均匀、配比准确.以三种方法合成Er/Yb: Gd0.5Lu0.5VO4原料:(1)利用液相法合成的ErVO4、YbVO4、LuVO4、GdVO4以一定比例混合在高温下烧结(液相-固混法);(2)采用液相共沉淀法生成Er/Yb: Gd0.5Lu0.5VO4沉淀后在高温下烧结(液相-液混法);(3)以柠檬酸为络合剂,用溶胶-凝胶法合成前驱体,在高温下烧结.利用XRD、FTIR、SEM、ICP、EDS等分析方法对合成原料表征,探讨各种方法合成原料的最佳条件,从纯度、颗粒尺寸、均匀性、组分准确性等方面比较三种方法合成原料的优缺点,为合成优质钒酸盐混晶原料提供重要的实验依据.     

金属有机分解法制备无铅K0.5Bi0.5TiO3铁电薄膜

采用金属有机分解法(MOD)在p型Si(111)衬底上制备了K0.5Bi0.5TiO3(KBT)薄膜.用X射线衍射技术研究了薄膜的结构和结晶性.同时还研究了薄膜的绝缘性和存储性能.结果发现在740°C下退火4min的KBT薄膜呈钙钛矿结构;在0～8V范围内,薄膜的漏电流小于1.5×10-9A;在-12～+8V的偏压范围内,C-V记忆窗口宽度为10V.     

Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3-BaMnO3无铅压电陶瓷的结构与电性能

采用固相法制备了(0.8 -x)Na0.5 Bi0.5TiO3 -0.2K0.5Bi0.5TiO3-xBaMnO3(简称NBT-KBT-BM)无铅压电陶瓷,研究了不同BM含量(x=0,0.25％,0.50％,0.75％,1.00％,1.25％,物质的量分数)样品的物相组成、显微结构及电性能.结果表明:所制备的NBT-KBT-BM陶瓷样品均为单一的钙钛矿结构.与纯NBT-KBT陶瓷相比,掺BM陶瓷的烧结温度降低,相对密度ρr得到提高.随x的增加,材料的压电常数d33、平面机电耦合系数kp与机械品质因子Qm先增大后减小,而介电损耗tanδ以及退极化温度Td一直降低.BM的掺入降低了材料的矫顽场Ec,提高了剩余极化强度Pr,从而增强了铁电性.当x=0.75％时,陶瓷获得最佳性能:d33=167 pC/N,kp=0.269,Qm=133,εr=774,tanδ=2.93％.