硅掺杂铝镓氮薄膜场发射性能研究

利用脉冲激光沉积,分别制备了一系列不同Si掺杂浓度的铝镓氮(AlGaN)薄膜.对此薄膜进行场致电子发射测试表明,Si掺杂浓度为1％的AlGaN薄膜具有最好的场发射特性.相对于非掺杂样品,其场发射电流明显增加,场发射开启电场显著降低.掺杂带来载流子浓度的提升,为场发射提供足够的电子源,使样品的场发射性能提升.但掺杂浓度的进一步提高,薄膜缺陷增加,电子迁移率降低,其薄膜内部电子输运能力降低大于电子浓度的增加对场电子发射的贡献,导致场发射性能开始变差.     

用金刚石车削技术制备EOS实验用铝薄膜和铜薄膜

 具有材料理论密度的金属薄膜对于材料高压状态方程(EOS)研究而言具有重要的意义。本文提出采用金刚石车削技术,利用超精密金刚石车床、金刚石圆弧刀具及真空吸附夹持技术,对纯铝和无氧铜进行端面车削,完成了EOS实验用铝薄膜和铜薄膜的车削加工,实现了薄膜密度接近材料理论密度。精加工工艺参数为：进给量0.001 mm/r,主轴转速3000 r/min,切削深度1 μm。采用Form Talysurf series 2型触针式轮廓仪进行测量,结果表明：铝薄膜、铜薄膜厚度可以达到小于10 μm水平,表面均方根粗糙度小于5 nm,原始最大轮廓峰-谷高度小于50 nm,厚度一致性好于99%。     

用金刚石车削技术制备EOS实验用铝薄膜和铜薄膜

具有材料理论密度的金属薄膜对于材料高压状态方程(EOS)研究而言具有重要的意义。本文提出采用金刚石车削技术,利用超精密金刚石车床、金刚石圆弧刀具及真空吸附夹持技术,对纯铝和无氧铜进行端面车削,完成了EOS实验用铝薄膜和铜薄膜的车削加工,实现了薄膜密度接近材料理论密度。精加工工艺参数为：进给量0.001 mm/r,主轴转速3000 r/min,切削深度1 μm。采用Form Talysurf series 2型触针式轮廓仪进行测量,结果表明：铝薄膜、铜薄膜厚度可以达到小于10 μm水平,表面均方根粗糙度小于5 nm,原始最大轮廓峰-谷高度小于50 nm,厚度一致性好于99%。     

薄膜太阳能电池异型布拉格背反射结构设计与制作

根据多光束干涉原理设计出用于薄膜太阳能电池的异型布拉格背反射器(IDBR).该异型布拉格背反射结构由两对非晶硅(36.5 nm)/二氧化硅(81 nm)分布式布拉格反射器(DBR)结构与三对非晶硅(73 nm)/二氧化硅(162 nm)DBR结构组合而成.讨论了不同结构的背反射器性能,分析了IDBR中心波长与层数的选择...     

铝纳米薄膜热导率的实验研究

金属纳米薄膜作为一种典型的纳米材料,已广泛应用于信息技术领域。研究表明,随着金属薄膜特征尺寸的减小,金属薄膜体现出与常规不同的热输运特性。本文采用飞秒激光泵浦-探测实验方法,结合抛物两步模型和修正的抛物两步模型,对铝纳米薄膜热导率进行研究。结果表明,考虑了声子热导率修正的抛物两步模型比抛物两步模型更能准确描述热反射信号。拟合得到铝膜热导率分别为98 W·m~(-1)·K~(-1)和94 W.m~(-1)·K~(-1),小于铝的体材料热导率,铝纳米薄膜热导率具有尺度效应,同时拟合得到声子热导率为2.8 W·m~(-1)·K~(-1),提出一种利用飞秒激光泵浦-探测测量声子热导率的方法。     

真空紫外波段铝反射膜制备

为制备出在130～210nm波段具有良好光谱性能的铝反射膜,优化设计了铝反射镜中铝层和保护层氟化镁的厚度,理论确定铝层和氟化镁保护层最佳厚度分别为80nm和33nm。采用热舟蒸发工艺,在BK7基片上制备了Al反射膜样品,获得了130～210nm波长范围内反射率均大于80%的金属铝膜。研究了铝层沉积速率和紫外辐照处理对薄膜性能的影响,并考察了铝膜光谱性能的时效性。结果表明铝层沉积速率越快,制备的铝膜反射率越高;合理地存放铝膜元件,可以长时间内保持铝膜的光谱性能。适当的紫外辐照处理能进一步提高铝膜在真空紫外波段的反射率。     

溶液法铝诱导晶化制备多晶硅薄膜

采用铝（Al）盐溶液作为诱导源进行了非晶硅晶化成多晶硅的研究.光学显微镜观测与Raman光谱分析表明,合适配比的铝盐溶液能够将非晶硅予以诱导晶化.采用剥层XPS测试分析,探究了Al盐溶液与硅表面可能的化学反应以及随之发生的硅-铝层交换的过程.最后对溶液法诱导晶化的机理进行了讨论. 关键词： 铝诱导晶化 多晶硅薄膜 溶液法     

沉积在液体衬底上连续铝薄膜的微观结构

研究了沉积在硅油衬底表面的连续铝薄膜的微结构及其表面形貌.与沉积在单晶硅表面的铝薄膜相比,两种铝薄膜均属颗粒结构,但硅油表面的铝薄膜具有颗粒尺寸较小、大小不均匀,表面起伏较大等特点,而且在该铝薄膜边缘的下表面,有一明显的波纹状楔型结构,其斜率仅为10^-4—10^-5.实验结果表明：这一现象是由于液体衬底的热膨胀行为引起的.此外对样品的晶态也进行了研究. 关键词： 铝薄膜 液体衬底 微观结构     

用于氮化镓发光二极管窗口层的铝掺杂氧化锌的生长

因应新时代电子产品的需求,透明导电薄膜(Transparent Conductive Oxides,TCO)的应用也更加广泛,传统上是使用氧化铟锡(Indium Tin Oxide,ITO)薄膜为透明导电薄膜,但其在高温应用上较不稳定并且易放出毒性,因此,铝掺杂氧化锌薄膜(ZnO∶Al,AZO)有逐渐取代ITO的趋势。本论文将探讨掺杂不同铝含量的影响,并且就其光电特性加以说明,最后得到其光的透过率~85%、电阻率~7.3×10-3Ω·cm以及面粗糙度~28nm的铝掺杂氧化锌薄膜,其具有表面粗化、电流分布层及窗口层的作用。并且将掺铝的氧化锌薄膜应用于氮化镓发光二极管上,以掺铝氧化锌微结构作为透明传导层的氮化镓发光二极管(λD=530nm,300×300μm)在20mA的工作电流下,其正向电压值为3.3V,输出功率达1.7mW,并且由光学显微镜图可以得知,小电流注下其电流分布均匀。若将AZO制作参数再作适当优化调整,取代ITO作为p型氮化镓上的透明传导层的可行性应该很高。     

8-羟基喹啉铝电致发光薄膜的电学特性

用真空蒸发沉积方法制备了一种由8-羟基@4铝(发射层)/二胺(空穴输运层)双层有机膜构成的直流薄膜电致发光(EL)器件。获得了发射峰位于520um的绿色EL.EL光谱极相似于8-羟基喹啉铝粉末的光致发光(PL)光谱。发现当首次对该器件结构施加正向偏压激发电致发光时,出现一个形成过程。实验发现与电致发光形成过程相对应的转变电压可能同有机薄膜的品质及电极蒸发条件有关。     

AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact

In this paper a novel A1GalnP thin-film light-emitting diode （LED） with omni-directionally reflector （ODR） and transparent conducting indium tin oxide （ITO） n-type contact structure is proposed, and fabrication process is developed. This reflector is realized with the combination of a low-refractive-index dielectric layer and a high reflectivity metal layer. This allows the light emitted or internally reflected downwardly towards the GaAs substrate at any angle of incidence to be reflected towards the top surface of the chip. ITO n-type contact is used for anti-reflection and current spreading layers on the ODR-LED with ITO. The sheet resistance of the ITO films （95 nm） deposited on n- ohmic contact of ODR-LED is of the order 23.5Ω/△ with up to 90% transmittance （above 92% for 590-770 nm） in the visible region of the spectrum. The optical and electrical characteristics of the ODR-LED with ITO are presented and compared to conventional AS-LED and ODR-LED without ITO. It is shown that the light output from the ODR-LED with ITO at forward current 20mA exceeds that of AS-LED and ODR-LED without ITO by about a factor of 1.63 and 0.16, respectively. A favourable luminous intensity of 218.3 mcd from the ODR-LED with ITO （peak wavelength 620 nm） could be obtained under 20 mA injection, which is 2.63 times and 1.21 times higher than that of AS-LED and ODR-LED without ITO, respectively.[第一段]     

表面为二维光子晶体结构的AlGaInP系发光二极管的研究

近年来,GaN基光子晶体发光二极管(light emitting diode,LED)的研究已经取得了一定的进展,利用光子晶体的光子带隙效应和光栅衍射原理,在LED上制作光子晶体结构将会提高出光效率.本文为了提高AlGaInP系LED的光提取效率,分析了常规LED光提取效率受到限制的原因,将光子晶体结构引入了AlGaInP系LED的器件结构设计,通过理论分析与实验验证,结果显示:光子晶体结构对于提高AlGaInP系LED的光提取效率同样起到了明显的效果,引入光子晶体后,LED的输出光强比常规结构LED平均 关键词： AlGaInP系LED 光子晶体 光提取效率 光强     

A1GaInP-Si glue bonded high performance light emitting diodes

We propose a new method of using conductive glue to agglutinate GaAs based A1CaInP light emitting diodes （LEDs） onto silicon substrate, and the absorbing GaAs layer is subsequently removed by grinding and selective wet etching. It was found that A1GaInP-Si glue agglutinated LEDs have larger saturation current and luminous intensity than the conventional LEDs working at the same injected current. The luminous intensity of the new device is as much as 1007.4 mcd at a saturation current of 125 mA without being encapsulated, while the conventional LEDs only have 266.2 mcd at a saturation current of 105 mA. The luminescence intensity is also found to increase by about 3.2% after working at 50 mA for 768 h. This means that the new structured LEDs have good reliability performance.     

AlGaInP-Si glue bonded high performance light emitting diodes

We propose a new method of using conductive glue to agglutinate GaAs based AlGaInP light emitting diodes (LEDs) onto silicon substrate,and the absorbing GaAs layer is subsequently removed by grinding and selective wet etching.It was found that AlGaInP-Si glue agglutinated LEDs have larger saturation current and luminous intensity than the conventional LEDs working at the same injected current.The luminous intensity of the new device is as much as 1007.4 mcd at a saturation current of 125 mA without being encapsulated,while the conventional LEDs only have 266.2 mcd at a saturation current of 105 mA.The luminescence intensity is also found to increase by about 3.2% after working at 50 mA for 768 h.This means that the new structured LEDs have good reliability performance.     

带介质分布式Bragg反射镜结构高性能共振腔发光二极管的研究

采用等离子体增强化学气相沉积高低频交替生长法生长了SiO₂/Si₃N₄透明介质分布式Bragg反射镜(DDBR), 提出了对DDBR采用干、湿法并用的腐蚀方法. 采用传输矩阵法理论分析了DDBR, 得出了为满足出光增益要求的反射率和DDBR结构. 使用光致发光(PL)谱仪测量分析了DDBR反射谱和光致发光谱, 获得了使光致发光谱辐射增强的DDBR结构, 在整个光致发光谱380–780 nm波段, 整体辐射增强1.058倍, 在谐振波长处辐射增强1.5倍, 半峰全宽值由23 nm变窄为10.5 nm, 获得了很好的光谱纯度. 利用最优DDBR结构制成了高性能共振腔发光二极管器件, 与普通结构相比, 实现了低开启电压1.78 V; 在20 mA注入电流下, 轴向光强提高了20%, 光功率和光效分别提高了27.7%和26.8%, 光功率衰减缓慢; 在0–100 mA注入电流下, 没有明显的下降趋势, 表现出了良好的温度稳定性. 关键词： 发光二极管 共振腔 介质分布式布拉格反射镜 辐射增强     

Bi‐directional organic light‐emitting diodes with nanoparticle‐enhanced light outcoupling

An effective method is presented for enhancing the outcoupling efficiency of translucent/bi‐directional organic light‐emitting diodes (TL/BD‐OLEDs) with a bottom indium tin oxide (ITO) anode and a top cathode comprised of a thin Ag layer covered with an organic capping layer. Upon insertion of a nanoparticle (NP)‐based scattering layer (NPSL) between the substrate and the ITO anode, the TL/BD‐OLEDs exhibit significantly enhanced external quantum efficiency (EQE) in both emission directions. Furthermore, the NPSL improves the color stability of the TL/BD‐OLEDs over a wide range of viewing angles. Simulations based on geometrical and statistical optics are performed to elucidate the mechanism by which the efficiency is enhanced and to establish strategies for further optimization. Simulations performed on the scattering layers with varying NP volume percentage reveal that the bottom‐side emission is governed by competition between waveguide‐mode extraction and backward scattering by NPs in the film, while the top‐side emission is largely dominated by the latter. Optimized bi‐directional OLEDs achieve a 1.64‐fold enhanced EQE compared to reference devices without NPSL.     

Analysis of visual perception of light emitting diode brightness in dense fog with various droplet sizes

Road signs must provide a conspicuous signal to a wide variety of drivers over a broad range of environmental and geometric conditions. Recently, there are an increasing number of applications in which light emitting diodes (LEDs) are used as the light source, including critical transportation signaling. In the presence of fog, the resulting visual signal is disturbed due to light scattering by airborne water droplets. By measuring LED brightness with human spectral sensitivity in various densities and various droplet sizes (10, 30, 50, and 100 μm), it is understood that the particle size distribution (fog droplet size) and density of fog does affect visibility in fog. The colored LEDs that contain a yellow component had high brightness evaluation, blue component had low brightness evaluation in all densities and different droplet sizes. The result in this paper can contribute to air and land traffic safety and the prevention of accidents.     

TiO2微粒对远程荧光粉膜及白光发光二极管器件光色性能的影响

利用热压法将TiO₂微粒掺入至YAG:Ce荧光粉和硅树脂中制备出远程荧光粉膜并封装成白光发光二极管(LED)器件, 通过荧光粉相对亮度仪、双积分球测试系统和可见光光谱分析系统对样品的光色性能及机理进行了研究. 结果表明: TiO₂的散射效应能够显著提高蓝光的利用率和黄光的透射强度, 白光LED器件的光通量在TiO₂浓度为0.966 g/cm³ 时达到最高值415.28 lm(@300 mA, 9.3 V), 提高了8.15%, 相关色温从冷白6900 K逐渐变化至暖白3832 K. TiO₂的掺入不仅提高了远程荧光粉膜的发射强度和白光LED器件的光通量, 同时能调控其相关色温.     

Ca1−xMo1−ySiyO4:Eux: A novel red phosphor for white light emitting diodes

Single phase of Ca_1−xMo_1−ySi_yO₄:Eu_x³⁺ (0.18?x?0.26, 0?y?0.04) was synthesized by solid-state method. The photoluminescence investigation indicated that Ca_1−xMoO₄:Eu_x³⁺ (0.18?x?0.26) could be effectively excited by 393 and 464 nm, and it exhibited an intense red emission at 615 nm. The introduction of Si⁴⁺ ions did not change the position of the peaks but strongly enhanced the emission intensity of Eu³⁺ under 393 and 464 nm excitations and showed very good color purity. The emission intensity of optimal Ca_0.8Mo_0.98Si_0.02O₄:Eu_0.2³⁺ sample (excited by 393 nm) was about 5.5 times higher than that of the phosphor Y₂O₂S:0.05Eu³⁺. So this phosphor could be nicely suitable for the application of the UV LED chips.     

Copper NPs decorated titania: A novel synthesis by high energy US with a study of the photocatalytic activity under visible light

The most important drawback of the use of TiO₂ as photocatalyst is its lack of activity under visible light. To overcome this problem, the surface modification of commercial micro-sized TiO₂ by means of high-energy ultrasound (US), employing CuCl₂ as precursor molecule to obtain both metallic copper as well as copper oxides species at the TiO₂ surface, is here. We have prepared samples with different copper content, in order to evaluate its impact on the photocatalytic performances of the semiconductor, and studied in particular the photodegradation in the gas phase of some volatile organic molecules (VOCs), namely acetone and acetaldehyde. We used a LED lamp in order to have only the contribution of the visible wavelengths to the TiO₂ activation (typical LED lights have no emission in the UV region). We employed several techniques (i.e., HR-TEM, XRD, FT-IR and UV–Vis) in order to characterize the prepared samples, thus evidencing different sample morphologies as a function of the various copper content, with a coherent correlation between them and the photocatalytic results. Firstly, we demonstrated the possibility to use US to modify the TiO₂, even when it is commercial and micro-sized as well; secondly, by avoiding completely the UV irradiation, we confirmed that pure TiO₂ is not activated by visible light. On the other hand, we showed that copper metal and metal oxides nanoparticles strongly and positively affect its photocatalytic activity.