A comparative study of ion-induced damages in C60 and C70 fullerenes

The stability of fullerenes (C₆₀ and C₇₀) under swift heavy ion irradiation is investigated. C₆₀ and C₇₀ thin films were irradiated with 120 MeV Ag ions at fluences from 1×10¹² to 3×10¹³ ions/cm². The damage cross-section and radius of damaged cylindrical zone were found to be higher for C₆₀ than C₇₀ as evaluated by Raman spectroscopy, which shows that the C₇₀ molecule is more stable under energetic ion impact. The higher damage cross-section of the C₆₀ molecule compared with that of the C₇₀ molecule is explained on the basis of thermal conductivity in the framework of the thermal spike model. The surface morphology of pristine C₆₀ and C₇₀ films is studied by atomic force microscopy. UV-visible absorption studies revealed that band gap for C₆₀ and C₇₀ fullerenes thin films decreases with increasing ion fluence. Resistivity of C₆₀ and C₇₀ thin films decreases with increasing ion fluence but the decrease is faster for C₆₀ than C₇₀, indicating higher damage in C₆₀. Irradiation at a fluence of 3×10¹³ ions/cm² results in complete damage of fullerenes (C₆₀ and C₇₀) into amorphous carbon.     

The effect of incident angle on the C60 bombardment of molecular solids

The effect of incident angle on the quality of SIMS molecular depth profiling using C₆₀⁺ was investigated. Cholesterol films of ∼300 nm thickness on Si were employed as a model and were eroded using 40 keV C₆₀⁺ at an incident angle of 40° and 73° with respect to the surface normal. The erosion process was characterized by determining at each angle the relative amount of chemical damage, the total sputtering yield of cholesterol molecules, and the interface width between the film and the Si substrate. The results show that there is less molecule damage at an angle of incidence of 73° and that the total sputtering yield is largest at an angle of incidence of 40°. The measurements suggest reduced damage is not necessarily dependent upon enhanced yields and that depositing the incident energy nearer the surface by using glancing angles is most important. The interface width parameter supports this idea by indicating that at the 73° incident angle, C₆₀⁺ produces a smaller altered layer depth. Overall, the results show that 73° incidence is the better angle for molecular depth profiling using 40 keV C₆₀⁺.     

Sputtering of amorphous ice induced by C60 and Au3 clusters

Molecular dynamics simulations were performed to study the behavior of cluster SIMS. Two predominant cluster ion beam sources, C₆₀ and Au₃, were chosen for comparison. An amorphous water ice substrate was bombarded with incident energy of 5 keV. The C₆₀ cluster was observed to shatter upon impact creating a crater of damage approximately 8 nm deep. Although Au₃ was also found to both break apart and form a damage crater, it continued along its initial trajectory causing damage roughly 10 nm deep into the sample and becoming completely imbedded. It is suggested that this difference in behavior is due to the large mass of Au relative to the substrate water molecule.     

Xenon-ion Induced Magnetic and Structural Modifications of Ferromagnetic Alloys

Thin polycrystalline films of permalloy (Ni₇₉Fe₂₁) and permendur (Co₅₀Fe₅₀) have been irradiated with Xe-ions to fluences of 10¹⁴–10¹⁶ ions/cm². Ion-induced structural and magnetic modifications have been measured by grazing angle X-ray diffraction, Rutherford backscattering and magneto-optical Kerr effect. In the case of permendur, the Xe-ion implantation first reduced the coercivity, because of stress relaxation, while higher ion fluences increased the coercivity due to pinning centers generated in the film. The ion irradiation aligned the in-plane easy axis of the magnetization along the direction of the external magnetic field during implantation. Phase shifts obtained from magnetic force microscopy confirmed these modifications. The effects of Xe-ion irradiation in permalloy films are much weaker and underline the importance of magnetostriction in the variation of the coercivity and anisotropy.     

The effect of C60 cluster ion beam bombardment in sputter depth profiling of organic-inorganic hybrid multiple thin films

The effects of C₆₀ cluster ion beam bombardment in sputter depth profiling of inorganic-organic hybrid multiple nm thin films were studied. The dependence of SIMS depth profiles on sputter ion species such as 500 eV Cs⁺, 10 keV C₆₀⁺, 20 keV C₆₀²⁺ and 30 keV C₆₀³⁺ was investigated to study the effect of cluster ion bombardment on depth resolution, sputtering yield, damage accumulation, and sampling depth.     

Photon-assisted synthesis of C60 polymers by laser irradiation

The harmonics of a free electron laser (FEL) were irradiated in vacuum to surfaces of compressed C₆₀ and a mixture of C₆₀ and I₂. The power and frequency of the fundamental FEL macro-pulse were ca. 0.5 mJ/pulse and 2 Hz, respectively. The irradiation time was 120-180 min. After irradiation of FEL with a typical wavelength of 450 or 345 nm, the Raman peak of Ag(2)-derived vibration mode of C₆₀ shifted to the lower-energy side. The Raman peak shift of the mixture powder sample was greater than that of pure C₆₀. Furthermore, changes of the crystalline structure indicated that various intermolecular combinations occurred by irradiation. These results strongly suggest that three-dimensional polymerization of C₆₀ was promoted by laser irradiation and the effect of photon-assisted hole-doping from iodine atoms to C₆₀ molecules.     

Effect of ion irradiation on C 60 thin films

We report a new effect of ion irradiation on C₆₀ thin films: C₆₀ thin films irradiated with 7-MeV C²⁺ ions show resistance to photopolymerization. The resistance increases with increasing ion fluence of irradiation. The effect is qualitatively explained by the fact that the number of a C₆₀ pair satisfying the topochemical requirement for photochemical reaction in solids decreases by destruction of C₆₀ molecules accompanied by lattice disorder.     

Yb2.75C60价带光电子能谱

用角积分紫外光电子能谱技术测量了Yb_2.75C₆₀薄膜的价带电子态密度分布.相纯Yb_2.75C₆₀样品通过C1s芯态x射线电子谱峰的位移表征.结果表明Yb_2.75C₆₀是半导体，在费米能级处几乎没有电子态分布.Yb 6s电子态和C₆₀LUMO能带的杂化效应不可忽略，有部分Yb 6s电子分布在Yb-C₆₀杂化能带上. 关键词： 2.75C₆₀')" href="#">Yb_2.75C₆₀ 电子能谱 电子态密度     

Dust acoustic wave oscillations in C60 molecule

In this letter, dispersion properties of low-frequency electrostatic waves in a C₆₀ molecule are investigated. It is assumed that C₆₀ molecule is charged due to the field emission, and hence the C₆₀ molecule can be regarded as charged dust spheres surrounded by degenerate electrons and ions. We obtain the dispersion relation for the low-frequency electrostatic oscillations in the C₆₀ molecule by using the quantum hydrodynamic model in conjunction with the Poisson equation.     

Rb掺杂C60单晶的相衍变和电子态

在C₆₀单晶超高真空解理面上制备C₆₀的Rb填隙化合物薄膜.用同步辐射光电子能谱研究了相衍变过程.观察到对应于固溶相、Rb₁C₆₀和Rb₃C₆₀的电子态密度分布.当数纳米厚Rb₃C₆₀薄膜在C₆₀单晶（111）解理面形成后，室温条件下进一步沉积Rb至样品表面不产生fcc到bct或bcc结构相变.C_{60 关键词： 4}C₆₀和Rb₅C₆₀吸附相')" href="#">金属性Rb₄C₆₀和Rb₅C₆₀吸附相 60单晶')" href="#">C₆₀单晶 相衍变 同步辐射光电子能谱     

Electrical transport study of structural phase transitions in C60 films and the effect of swift heavy ion irradiation

Three phase transitions (face centered to simple cubic, surface rearrangement from (2×2) to (1×1) and glass transition) in fullerene thin films and the effect of 150 MeV Ti ion irradiation on these transitions have been studied, using temperature dependence of electrical resistivity measurements. The structural properties of the C₆₀ thin films are studied by X-ray diffraction, atomic force microscopy and UV-vis spectroscopy. It is observed that defect creation by ion irradiation in the films lead to quenching and broadening of structural phase transitions but the transition temperatures did not show significant shifting under ion irradiation.     

Preparation of supramolecular assembled films of fullerene C60 on the aqueous solution of water-soluble azocalixarene

A convenient procedure was developed to prepare an ultra-thin film of supermolecules of a spherical fullerene C₆₀ and water-soluble azocalix[6]arene. The C₆₀ molecule is so hydrophobic that it easily forms a three-dimensional aggregate on the water surface. When C₆₀ molecules were spread on an aqueous solution of water-soluble azocalixarene that acts as a host for C₆₀, the hydrophobic C₆₀ was captured in the cavity of the host molecule at the boundary of two phases and formed amphiphilic supermolecules. The supermolecules assembled spontaneously into ultra-thin films over 1-cm wide. The monolayer-like film could be transferred onto a solid support by the Langmuir–Blodgett technique or the inverse Langmuir–Schaefer technique. The morphology and the transferability of the supramolecular assembled films were examined by changing the host molecules, the initial density of C₆₀ on the water surface, the subphase temperature and the metal ions in the subphase.     

Photopolymerization of C<Subscript>60</Subscript> and Li@C<Subscript>60</Subscript> studied by second-harmonic generation and infrared spectroscopy

The photopolymerization of C₆₀ and Li@C₆₀ films was investigated by means of optical second-harmonic generation. The films were deposited under ultra-high-vacuum conditions and irradiated in situ with an Ar⁺ laser at 514 nm. The second harmonic generated by a Nd:YAG laser working at 1064 nm was monitored after different steps of irradiation. Photopolymerization was observed after very low irradiation doses, of the order of 10²⁰ photons/cm², and confirmed with infrared absorption spectroscopy. Similar kinetics for C₆₀ and Li@C₆₀ were observed. The measurements give evidence for photopolymerization of the endohedral fullerene Li@C₆₀. PACS 78.30.Na; 82.50.Hp; 81.05.Tp     

C60-聚甲基丙烯酸甲脂复合膜的结构、光学和电荷转移特性

描述了通过溶胶-凝胶法制备的C₆₀-PMMA复合膜的结构、紫外-可见吸收特性、R aman 散射特性和红外吸收特性.通过对C₆₀紫外-可见吸收光谱，Raman散射谱和红外 吸收谱的实验和理论分析，研究了C₆₀与PMMA之间的电荷转移. 关键词： 溶胶-凝胶法 60-PMMA复合膜')" href="#">C₆₀-PMMA复合膜 电荷转移     

内掺氮富勒烯N_2@C_(60)的几何结构和电子性质的密度泛函计算研究

采用密度泛函理论中的广义梯度近似对内掺氮富勒烯N2@C60的几何结构和电子性质进行计算研究.发现在N2@C60中,氮倾向以分子形式存在于C60中心处.键长分析、能级图、态密度图和电荷分析表明内掺氮分子对C60几何结构和电子结构带来的影响甚微.     

高能Xe离子辐照引起的注碳a:SiO2中新结构的形成

先用120keV的碳离子注入非晶二氧化硅a:SiO2薄膜，再用能量为1754MeV的Xe离子辐照。注碳量为5．0×10^16—8．6×10^17ion／cm^2，Xe离子辐照剂量为1．0×10^11和5．0×10^11ion／cm^2。辐照后的样品中形成的新结构用显微傅立叶变换红外光谱仪进行测试分析。结果表明，Xe离子辐照引起了注碳a:SiO2中Si—C，C—C，Si—O—C键以及CO和CO2分子的形成与演化。在注碳量较高时，Xe离子辐照在样品中产生了大量的Si—C键。与注入未辐照和辐照的低注碳量样品比较，增强的Si—C键的形成，预示着辐照可引起注碳a:SiO2样品中的SiC结构相变。Amorphous silicon-dioxide （a:SiO2） films were firstly implanted at room temperature （RT） with 120 keV C-ions to doses ranging from 5.0 × 10^16 to 8.6 × 10^17 ion/cm^2, and then the C-doped a:SiO2 films were irradiated at RT with 1 754 MeV Xe ions to 1.0 × 10^11 and 5.0 × 10^11 ion/cm^2, respectively. The information of new tex- ture formation in the C-doped SiO2 films after high-energy Xe ion irradiation was investigated using micro-FTIR measurements. The obtained results showed that Si--C, C--C, Si--O--C bonds as well as CO and CO2 molecules were formed in the C-doped a-SiO2 films after Xe ion irradiation. Furthermore, Xe-ion irradiation induced a plenteous formation of Si--C bonds in the high dose C-ion implanted a:SiO2 films. Compared with the C-implanted sampies without Xe-ion irradiation and the low dose C-implanted samples with Xe-ion irraddiation, the enhanced and plenty of Si--C bond formation implied that the phase of SiC structures may be produced by Xe-ion irradiation in the high dose C-ion implanted a:SiO2 films.     

Model multilayer structures for three-dimensional cell imaging

The prospects for SIMS three-dimensional analysis of biological materials were explored using model multilayer structures. The samples were analyzed in a ToF-SIMS spectrometer equipped with a 20 keV buckminsterfullerene (C₆₀⁺) ion source. Molecular depth information was acquired using a C₆₀⁺ ion beam to etch through the multilayer structures at specified time intervals. Subsequent to each individual erosion cycle, static SIMS spectra were recorded using a pulsed C₆₀⁺ ion probe. Molecular intensities in sequential mass spectra were monitored as a function of primary ion fluence. The resulting depth information was used to characterize C₆₀⁺ bombardment of biological materials. Specifically, molecular depth profile studies involving dehydrated dipalmitoyl-phosphatidylcholine (DPPC) organic films indicate that cell membrane lipid materials do not experience significant chemical damage when bombarded with C₆₀⁺ ion fluences greater than 10¹⁵ ions/cm². Moreover, depth profile analyses of DPPC-sucrose frozen multilayer structures suggest that biomolecule information can be uncovered after the C₆₀⁺ sputter removal of a 20 nm overlayer with no appreciable loss of underlying molecular signal. The experimental results support the potential for three-dimensional molecular mapping of biological materials using cluster SIMS.     

Preparation of sol-gel ZrO2-SiO2 highly reflective multilayer films and laser-induced damage threshold characteristic

Sol-gel (ZrO₂/SiO₂)¹² ZrO₂ films were prepared by spin coating method. The reflectivity spectrum of the films was measured with a Lambda 900 spectrometer. In order to investigate laser-induced damage threshold (LIDT) characteristic of highly reflective films, one-layer ZrO₂ and SiO₂ films, two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were also prepared by spin coating method. LIDT of each film was measured. Damage morphology after laser irradiation was characterized by optical microscopy (Nikon E600K). The experimental results showed that the reflectivity of (ZrO₂/SiO₂)¹² ZrO₂ film at 1064 nm and 355 nm wavelength is 99.7%. The LIDT results decreases as the number of layer of films increases. All the films have similar damage morphology. The experimental results are explained by the different temperature profiles of the films.     

Structural and phase composition of fullerene films deposited by high-power ion beams

Deposition of carbon films containing C₆₀ and C₇₀ fullerenes is an urgent problem, related to development of nanotechnologies and new nanomaterials. Such films have been obtained by ultrafast deposition of dense ablation plasma on a substrate; the plasma was generated as a result of irradiation of a graphite target by pulsed high-power ion beams. The structural and phase composition of the deposited films has been investigated.     

Conducting properties of planar irradiated and pristine silicon–fullerite–metal structures

Au/C₆₀/p-Si sandwich structures can be easily obtained by evaporation of a thin fullerite (C₆₀) film on a silicon substrate and a thin Au film on top of the C₆₀ film. In this case a C₆₀/p-Si p–n heterojunction appears. Both the dark and photoconductivities of the planar pristine and irradiated Au/C₆₀/p-Si structures were measured as a function of the irradiation fluence. Furthermore, the pressure dependence of these structures was determined. A strong dependence on the irradiation damage was found. PACS 81.05.Tp; 72.80.-r; 72.80.Rj; 72.40.+w; 61.82.Rx