Field-induced insulator-metal-insulator transitions in low-energy H2- ion-irradiated epitaxial La2/3Cal/3MnO3 thin films

Epitaxial La2/3Cal/3MnO3 thin films grown on LaA103 （001） substrates were irradiated with low-energy 120-keV H＋ ions over doses ranging from 1012 ions/cm2 to 1017 ions/cm2. The irradiation suppresses the intrinsic insulator-metal （I-M） transition temperature and increases the resistance by reducing the crystallographic symmetry of the films. No irradiation-induced columnar defects were observed in any of the samples. The specific film irradiated at a critical dose around 8 x 1015 ions/cm2 is in a threshold state of the electric insulator where the I-M transition is absent. In an external field of 4 T or higher, the I-M transition is restored and thus an enormous magnetoresistance is observed, while a negative temperature coefficient resumes as the temperature is reduced further. Magnetic relaxation behavior is confirmed in this and other heavily irradiated samples. The results are interpreted in terms of the displacement of oxygen atoms provoked by ion irradiation and the resulting magnetic glassy state, which can be driven into a phase coexistence of metallic ferromagnetic droplets and the insulating glass matrix in a magnetic field.     

An electron spin resonance study of Eu doping effect in La4/3Srs/3Mn2O7 single crystal

The effect of Eu3＋ ion doping in the La sites of single-crystal La4/3Srs/3Mn2O7 was investigated. Electron spin resonance （ESR） was applied to La4/3Sr5/3Mn2O7 and （Lao.8Euo.2）4/3Sr5/3Mn2O7 single crystals. A phase separation and phase transitions were observed from the ESR spectra data. Between 350 K and 300 K, both paramagnetic resonance （PMR） and anisotropic ferromagnetic resonance （FMR） lines were observed in the ab plane and the c axis direction, suggesting a coexistence of the paramagnetic （PM） phase and the ferromagnetic （FM） phase. The magnetization measurement reveals a spin-glass-like behavior in single-crystal （Lao.8Euo.2）4/3 Sr5/3Mn2O7 below the temperature of spin freezing Tf （- 29.5 K）.     

Performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors

We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.     

Fatigue damage behavior of a surface-mount electronic package under different cyclic applied loads

This paper studies and compares the effects of pull-pull and 3-point bending cyclic loadings on the mechanical fa- tigue damage behaviors of a solder joint in a surface-mount electronic package. The comparisons are based on experimental investigations using scanning electron microscopy （SEM） in-situ technology and nonlinear finite element modeling, respec- tively. The compared results indicate that there are different threshold levels of plastic strain for the initial damage of solder joints under two cyclic applied loads; meanwhile, fatigue crack initiation occurs at different locations, and the accumulation of equivalent plastic strain determines the trend and direction of fatigue crack propagation. In addition, simulation results of the fatigue damage process of solder joints considering a constitutive model of damage initiation criteria for ductile materials and damage evolution based on accumulating inelastic hysteresis energy are identical to the experimental results. The actual fatigue life of the solder joint is almost the same and demonstrates that the FE modeling used in this study can provide an accurate prediction of solder joint fatigue failure.     

Enhanced ferroelectricity and ferromagnetism in Bio.9Bao. 1FeO3/Laz/3Srl/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.lFeO3 （BBFO）/La2/3Srl/3MnO3 （LSMO） heterostructures are fabricated on LaA103 （100） substrates by pulsed laser deposition. Giant remnant polarization value （~ 85 μC/cm2） and large saturated magnetization value （~ 12.4 emu/cm3） for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectrie properties in the BBFO/LSMO het- erostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

MoO3/Ag/AI/ZnO intermediate layer for inverted tandem polymer solar cells

We report an MoO3/Ag/Al/ZnO intermediate layer connecting two identical bulk heterojunction subcells with a poly（3-hexylthiophene） and [6,6]-phenyl-C61-butyric acid methyl ester （P3HT and PCBM） active layer for inverted tan- dem polymer solar cells. The highly transparent intermediate layer with an optimized thickness realizes an Ohmic contact between the two subcells for effective charge extraction and recombination. A maximum power conversion efficiency of 3.76% is obtained for the tandem cell under 100 mW/cm2 illumination, which is larger than that of a single cell （3.15%）. The open-circuit voltage of the tandem cell （1.18 V） approaches double that of the single cell （0.61 V）.     

MEH-PPV/Alq_3-based bulk heterojunction photodetector

In this paper, we present the effect of varied illumination levels on the electrical properties of the organic blend bulk heterojuction （BHJ） photodiode. To prepare the BHJ blend, poly（2-methoxy-5（2P-ethylhexyloxy） phenyleneviny- lene （MEH-PPV） and aluminum-tris-（8-hydroxyquinoline） （Alq3） are used as donor and acceptor materials, respectively. In order to fabricate the photodiode, a 40-nm thick film of poly（3, 4-ethylendioxytbiophene）：poly（styrensulfonate） （PE- DOT：PSS） is primarily deposited on a cleaned ITO coated glass substrate by spin coating technique. The organic photo- sensitive blend is later spun coated on the PEDOT：PSS layer, followed by the lithium fluoride （LiF） and aluminium （A1） thin films deposition by thermal evaporation. The optical properties of the MEH-PPV：Alq3 blend thin films are investigated using photoluminescence （PL） and UV-Vis spectroscopy. The photodiode shows good photo-current response as a function of variable illumination levels. The responsivity value - 8 mA/W at 3 V is found and the ratio of photo-current to dark current （lph/IDark） is found to be 1.24.     

Improved Z^1/3 Law of Nuclear Charge Radius

An improved Z^1/3 law of nuclear charge radius is presented. The comparison between the calculated and experimental nuclear charge radii now available shows that this new formula is better than the other conventional formulae.     

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.     

First-principles study of the structural,elastic, and optical properties for Sr0.5Ca0.5TiO3

A detailed theoretical study of the structural, elastic, and optical properties for Sr0.5Ca0.5TiO3 is carried out by first- principles calculations. The band structure exhibits a direct bandgap of 2.08 eV at the F point in the Brillouin zone. The bulk modulus, shear modulus, Young＇s modulus, and Poisson＇s ratio are derived based on the calculated elastic constants. The bulk modulus B = 153 GPa and shear modulus G = 81GPa are in good agreement with available experimental data. Poisson＇s ratio v = 0.275 suggests that Sr0.sCa0.sTiO3 should be classified as being a ductile material. Using the electronic band structure and density of states, we analyze the interband contribution to the optical properties. The real and imaginary parts of the dielectric function, as well as the optical properties such as the optical absorption coefficient, refractive index, extinction coefficient, and energy-loss spectrum are calculated. The static dielectric constant ε1 （0） and the refractive index n（0） are also investigated.     

Experimental clarification of orientation dependence of germanium PMOSFETs with AlzO3/GeOx/Ge gate stack

An extensive and complete experimental investigation with a full layout design of the channel direction was carried out for the first time to clarify the orientation dependence of germanium p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）. By comparison of gate trans-conductance, drive current, and hole mobility, we found that the performance trend with the substrate orientation for Ge PMOSFET is （110）〉（111） ~ （100）, and the best channel direction is （110）/[110]. Moreover, the （110） device performance was found to be easily degraded as the channel direction got off from the [ 110] orientation, while （100） and （111） devices exhibited less channel orientation dependence. This experimental result shows good matching with the simulation reports to give a credible and significant guidance for Ge PMOSFET design.     

Interaction and spin–orbit effects on a kagome lattice at 1/3 filling

We investigate the competing effects of spin-orbit coupling and electron--electron interaction on a kagome lattice at 1/3 filling. We apply the cellular dynamical mean-field theory and its real-space extension combined with the continuous time quantum Monte Carlo method, and obtain a phase diagram including the effects of the interaction and the spin-orbit coupling at T = 0. 1t, where T is the temperature and t is the hopping energy. We find that without the spin-orbit coupling, the system is in a semi-metal phase stable against the electron--electron interaction. The presence of the spin-orbit coupling can induce a topological non-trivial gap and drive the system to a topological insulator, and as the interaction increases, a larger spin--orbit coupling is required to reach the topological insulating phase.     

Comparison between N2 and O2 anneals on the integrity of an Al2O3/SiaN4/SiO2/Si memory gate stack

In this paper the endurance characteristics and trap generation are investigated to study the effects of different postdeposition anneals （PDAs） on the integrity of an Al2O3/Si3N4/SiOz/Si memory gate stack. The flat-band voltage （Vfb） turnarounds are observed in both the programmed and erased states of the N2-PDA device. In contrast, this turnaround is observed only in the erased state of the O2-PDA device. The Vfb in the programmed state of the O2-PDA device keeps increasing with increasing program/erase （P/E） cycles. Through the analyses of endurance characteristics and the low voltage round-trip current transients, it is concluded that in both kinds of device there are an unknown type of pre-existing characteristic deep traps and P/E stress-induced positive oxide charges. In the O2-PDA device two extra types of trap are also found： the pre-existing border traps and the P/E stress-induced negative traps. Based on these four types of defects we can explain the endurance characteristics of two kinds of device. The switching property of pre-existing characteristic deep traps is also discussed.     

Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films

In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 .heterostructures de- posited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P-E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage （Vmax）. At a Vmax of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a Vmax of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I-V curve fitting.     

Effect of alumina thickness on Al_2O_3/InP interface with post deposition annealing in oxygen ambient

In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing （PDA） in the oxygen ambient is studied. Atomic layer deposited （ALD） Al2O3 films with four different thickness values （5 nm, 7 nm, 9 nm, 11 rim） are deposited on InP substrates. The capacitance-voltage （C-V） measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy （XPS） data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface.     

Ferromagnetism in one-dimensional Hubbard model induced by the next-nearest-neighbor hopping at electron density 3/2

Ferromagnetism in the one-dimensional Hubbard model with the next-nearest-neighbor hopping is explored by using the exact-diagonalization method in a small cluster and the equation-of-motion method in the thermodynamic limit with electron density n = 3/2. With these two complementary methods, it is found that an intermediate value of the next-nearest- neighbor hopping amplitude tl tends to stabilize the fully polarized ferromagnetic state under the condition that the on-site coulomb interaction U is sufficiently large in our model. The ground-state phase diagram of the model is presented in the tl-U plane.     

Characterization and luminescence of Eu/Sm-coactivated CaYAl3O7 phosphor synthesized by using a combustion method

A novel red-emitting phosphor, CaYAl3O7 : Eu 3+ , Sm3+ , is synthesized by a combustion method at a low temperature (850℃), and the single phase of CaYAl3O7 is confirmed by powder X-ray diffraction measurements. The photoluminescence property results reveal that the red emission intensity of Eu3+ is strongly dependent on the Sm3+ concentration. Only the Eu 3+ luminescence is detected in the Eu 3+ -Sm3+ co-doped CaYAl3O7 phosphor with 393 nm excitation. However, under the characteristic excitation (402 nm) of Sm3+ , not only the Sm3+ emission but also the Eu 3+ emission are observed. A possible mechanism of the energy transfer between Sm3+ and Eu 3+ is investigated in detail.     

Effects of acetone-soaking treatment on the performance of polymer solar cells based on P3HT/PCBM bulk heterojunction

The improvement of the acetone-soaking treatment to the performance of polymer solar cells based on the P3HT/PCBM bulk heterojunction is reported. Undergoing acetone-soaking, the PCBM does not distribute uniformly in the vertical direction, a PCBM enrichment layer forms on the top of the active layer, which is beneficial to the collec- tion of the carriers and blocking the inverting diffusion carriers. X-ray photoelectron spectroscopy （XPS） analysis reveals that the PCBM weight ratio on the top of the active layer increases by 20% after the acetone-soaking treatment. Due to the nonuniform distribution of PCBM, the short-circuit current density, the open-circuit voltage, and the fill factor are enhanced significantly. Finally, the power conversion efficiency of the acetone-soaking device increases by 31% compared with the control device.     

Dielectric and infrared properties of SrTiO3 single crystal doped by 3d （V,Mn, Fe,Ni） and 4f （Nd,Sm, Er） ions

In this study, the effects of doping by 3d （V, Mn, Fe, Ni） and 4f （Nd, Sm, Er） ions on dielectric and infrared properties of SrTiO3 （STO） single crystals are investigated. It is well known that doping of the SrTiO3 can change the dielectric properties of the STO from an insulator to an n-type semiconductor, and even to a metallic conductor. Dielectric and infrared （IR） properties of the undoped STO and doped STO single crystals are analyzed using dielectric spectroscopy （80 kHz-5 MHz）, transmission （200 cm^-1-4000 cm^-1）, and reflection spectroscopy （50 cm^-1-2000 cm^-1）. It is found that doping by the 3d ions reduces the value of dielectric permittivity, but the trend of temperature dependence of the dielectric permittivity remains almost unchanged. On the other hand, dielectric spectroscopy measurements for samples doped by 4f ions show the anomalous behaviors of the dielectric permittivity at temperatures around the temperature of the structural phase transition. There are two fractures of temperature dependences of inverse dielectric permittivity εr^-1 （T）. Transmittance spectroscopy measurements show that there are differences in the shape of the spectrum in the mid-IR region between the undoped STO and the one doped by 4f ions. The differences in the reflectance spectrum between the STO：Nd and STO are analyzed in detail.