等效回路法在雷电电磁场研究中的应用

根据雷电电磁场对传输线的影响,将雷电电磁场中的传输线方程理解为电感电容的串并联回路,快速而精确地计算分析雷电产生的水平电场,认为利用等效回路法研究雷电电磁场对传输线耦合的机理具有重要意义.     

边缘费米液体中的温差电效应

我们计算了边缘费米液体中的温差电系数，发现得到的理论表达式与ＹＢａ２Ｃｕ３Ｏ７－δ（δ＝０．５３和δ＝０．３５）上的正常态实验数据拟合得比较好。通过拟合我们得到了电荷和自旋激发与电子之间相互作用的有效耦合常数为０．６３３（对于δ＝０．５３）、０．６８５（对于δ＝０．３５），电荷和自旋激发的特征能量为１１４ｍｅＶ（对于δ＝０．５３）、１０６ｍｅＶ（对于δ＝０．３５）。我们还发现这些材料中的费米面非常     

基于电湿效应的双液体透镜

介绍了一种新型的、基于电湿效应的双液体透镜的发展历史、结构原理,通过改变外加电压的大小以调节透镜的焦距,从而达到无机械运动变焦的目的.推导并分析了两种液体透镜模型的焦距与外加电压的关系.     

离子液体存在下铜的电沉积及其表面增强拉曼散射效应研究

离子液体作为一种绿色介质,在电化学领域中的研究正在兴起,引起了研究者的浓厚兴趣。文章运用循环伏安法研究了离子液体(1-丁基-3-甲基咪唑四氟硼酸盐,[bmim]BF4)存在时,酸性硫酸铜溶液中铜在铜电极上的电化学沉积行为。研究表明,[bmim]BF4的加入使铜的沉积峰电位负移,沉积电流增加。采用扫描电镜(SEM)和X射线衍射(XRD)对铜镀层的形貌及结构进行表征,结果显示离子液体的存在可使铜镀层的层状晶粒尺寸减小,镀层出现(220)高择优取向。以甲基橙(MO)为探针分子,研究了所得铜镀层的表面增强拉曼散射(SERS)效应,发现离子液体存在下得到的铜镀层是较好的SERS基底,具有良好的增强效果及稳定性。对MO分子的增强因子可达4.7×105,而且保存了60天后,其检测灵敏度没有显著的降低。     

紫外光谱法检测水中咪唑类离子液体的含量

介绍了用紫外光谱测定水中离子液体含量的方法。测定了7种离子液体([C4mim][Cl]、[C4mim][BF4]、[C4mim][PF6]、[C5mim][Cl]、[C6mim][BF4]、[C8mim][Cl]和[C8mim][BF4])的最大吸收波长,并且绘制了校准曲线。结果表明,在实验试剂用量范围内,离子液体在波长211nm附近的吸光度与浓度呈线性关系,其线性相关系数均大于0.999。说明用紫外光谱法检测水中离子液体含量简单、快速且测定结果准确可靠。     

液体电极放电光谱检测水体中的金属元素

水环境中的重金属残留已对人类安全构成严重威胁,急需快速、高效的重金属残留检测方法。利用待测液体作为放电进行大气压辉光放电是近几年兴起的一种检测水体中金属元素的有效方法。本文综述了近年来出现的液体电极放电装置,分析了影响金属元素发射强度的因素,总结了液体电极放电光谱技术检测水体中金属元素的研究成果。最后分析了液体电极放电光谱技术所存在的问题,对基于液体电极放电光谱技术快速检测水体中的金属元素急需解决的关键问题和发展前景进行了讨论。     

纳米多孔离子液体复合材料的合成及其在酯化反应中的应用

以溴化1-丁基-3-甲基咪唑离子液体和磷钨杂多酸(H₃PW₁₂O₄₀)为原料制备了杂多酸功能化离子液体复合材料催化剂(bmim-PW12),并用于催化乙酸与正丁醇酯化合成乙酸正丁酯的反应,考察了bmim-PW12不同热处理温度对其结构以及催化酯化反应活性的影响．结果表明,bmim-PW12在500 oC热处理时杂多酸 阴离子仍保持Keggin结构,但有机阳离子在350 oC以上发生了部分分解．bmim-PW12在400 oC热处理具有纳米多孔结构和较大的酸强度,且在丁醇与乙酸酯化合成乙酸丁酯反应中,具有较高的催化活性和较好的重复使用性能.     

芘在离子液体及常规溶剂中的激光闪光光解研究

利用纳秒级时间分辨激光光解装置,以Nd:YAG激光器三倍频后的355 nm激光作为激发光源,研究了芘在常规溶剂乙腈、丙酮、环己烷、1-丁基-3-甲基咪唑六氟磷酸离子液体([Bmim][PF6])、N-丁基吡啶四氟硼酸离子液体([BuPy][BF4])以及三乙基庚基铵双三氟甲磺酰亚胺(R4NNTf2)的瞬态光解行为,比较...     

液体薄膜靶在激光驱动辐射源和激光离子加速中的应用

流动的无支撑液体薄膜在各个领域有着广泛应用。超强激光作用在这样的薄膜上,可产生涵盖太赫兹到伽马射线的高亮度次级辐射及高能的离子,并具有高重频、低成本、可连续工作等显著优势。概述了液体薄膜靶的制备和表征方法,阐明了液体薄膜靶相对于传统靶材的特性和优势,并对其在激光驱动辐射源和激光离子加速中的应用做出了总结和展望。     

基于平板电极的非球面组合液体透镜的仿真与实验分析

应用介电泳原理设计了一种基于平板电极的非球面组合液体透镜。该透镜主要由上下平行的4块氧化铟锡（ITO）导电平面玻璃板、腔体、介质层和疏水层组成,具有结构简单、易于实现的优点。利用COMSOL、MATLAB和Zemax软件,建立了基于平板电极的非球面组合液体透镜的光学模型,仿真分析了其在不同电压下的焦距变化,并讨论了平板电极的平行度对组合透镜焦距的影响。对该非球面组合透镜的器件制备与实验分析,结果表明：当工作电压由0增加到280 V时,焦距由28.7135 mm变化为20.1943 mm,与仿真结果基本相符;该器件的成像分辨率最高可达49.8244 lp/mm。     

SiGe HBT大信号等效电路模型

基于SiGe HBT(异质结双极晶体管)的物理模型，建立了描述SiGe HBT的大信号等效电路模型.该等效电路模型考虑了准饱和效应和自热效应等，模型分为本征和非本征两部分，物理意义清晰，拓扑结构相对简单.该模型嵌入了PSPICE软件的DEVEO(器件方程开发包)中.在PSPICE软件资源的支持下，利用该模型对SiGe HBT器件进行了交直流特性模拟分析，模拟结果与理论分析结果相一致，并且与文献报道的结果符合较好. 关键词： SiGe HBT 等效电路模型 PSPICE     

The noise equivalent circuit model of quantum-dot lasers

We derive the noise equivalent circuit model of semiconductor self-assembled quantum-dot (QD) lasers (SAQDL) from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise of an SAQDL combined with electronic components. Using the presented model, we study how the carrier dynamics influences relative intensity noise (RIN) of QD lasers. We demonstrate that RIN is degraded with larger inhomogeneous broadening. Furthermore, we show that RIN is enhanced for lower quantum-dot coverage level.     

An equivalent circuit model of a novel photodetector

An equivalent circuit model of a novel photodetector (PD) is proposed in this article. We use this model to describe the relation between the bias voltage and current (I–V), also the bias voltage and capacitance(C–V) of this kind of novel PD. The circuit model could optimize the structure of the circuit and could be linked with the readout circuit. According to the comparison between the simulation result and the experimental result by circuit testing, we could find they are in good agreement, which proving the correctness of the equivalent circuit model. The signification of this equivalent circuit model is to design an optimal readout circuit (ROIC) for the novel PD.     

An equivalent circuit model for microwave-biased extrinsic photoconductors1

An equivalent circuit model for microwave-biased extrinsic photoconductors is introduced. Theoretical performance results calculated from the model are compared to experimental values of a microwave-biased mercury-doped germanium photoconductor operating at high background photon irradiance levels. The comparison indicates that the equivalent circuit model is adequate to describe the performance of microwave-biased extrinsic photoconductors. Experimental and theoretical results indicate that microwave-biased extrinsic photoconductors are high gain (G ∼10⁴) devices with a simultaneous submicrosecond speed of response.     

Application of an equivalent circuit to signal-to-noise calculations in MRI

Transfer functions determined from the component values of an equivalent circuit are used to calculate the relative signal-to-noise ratio of rf coils for magnetic resonance imaging. Experimental verification of the method is obtained by directly measuring signals from three solenoidal coils and by measuring the signal-to-noise ratio of these solenoids. The transfer functions separate the total noise voltage into contributions from the coil resistance and contributions from magnetic and electric field interactions with the sample. The use of this technique in understanding and improving coil design is discussed.     

Threshold flux-controlled memristor model and its equivalent circuit implementation

Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.     

An equivalent circuit model for the long-wavelength quantum well infrared photodetectors

We present an equivalent circuit model for AlGaAs/GaAs long wavelength quantum well infrared photodetectors (LW-QWIPs). Bias dependence of the dark current and photoresponse is described with the aid of analogue circuit modeling technique in the TINA software. This model can be integrated with the readout circuit for the whole device circuit simulation and optimization further. The designed parameters of the LW-QWIPs can be fed into this model as user-defined circuit parameters to simulate the detector performance. The obtained results are consistent with the experimental measurements.     

Analyzing the effects of post couplers in DTL tuning by the equivalent circuit model

Stabilization of the accelerating field in Drift Tube Linac（DTL） is obtained by inserting Post Couplers（PCs）. On the basis of the equivalent circuit model for the DTL with and without asymmetrical PCs, stabilization is deduced quantitatively： we let δω/ω0 be the relative frequency error, then we discover that the sensitivity of field to perturbation is proportional to √δω/ω0 without PCs and to δω/ω0 with PCs. Then we adapt the circuit model of symmetrical PCs for the case of asymmetrical PCs. The circuit model shows how the slope of field distribution is changed by rotating the asymmetrical PCs and illustrates that the asymmetrical PCs have the same effect as the symmetrical ones in stabilization.     

用电路模型等效变换的方法教学RL暂态过程

教学RL回路的暂态过程时,为了改善学生对已有知识记忆的激活和建立意义明确的关联,本文使用电路模型等效变换和构建的方法,分别以初态和终态为参考状态,对RL回路的全状态响应进行了分析,直观地将此暂态过程解析为:1)从初态到终态的常系数衰减过程,2)零输入响应和零状态响应的叠加.从而实现对教学效果的提高.     

利用等效电路模型计算耦合腔行波管注-波互作用

通过研究Curnow等效电路模型,得到进行单腔计算的矩阵方程,进而获得线路场方程, 结合运动方程和空间电荷场方程,从而推导出耦合腔行波管一维注波互作用非线性理论模型. 该理论能计算任意的切断、跳变、渐变等结构以及多信号模拟.利用该理论编制的软件计算了 59 GHz-64 GHz耦合腔行波管AM-PM相位失真,三阶互调以及五阶互调分量. 同时模拟得到了59 GHz-64 GHz带内饱和输出功率分布,理论结果与热测结果误差在5%以内.