Magnetic properties of amorphous Mn x B100−x alloys

Magnetic properties of amorphous Mn _x B_100–x alloys ranging fromx = 30 to 70 under high magnetic fields and low ac magnetic fields in the temperature range from 4.2 K to room temperature have been investigated. Samples which have Mn concentrations of aboutx = 40–60 show spin-glass-like properties in the low-temperature region. This spin-glass characteristics result from a frustration in the spin system which is caused by the competition of ferromagnetic and antiferromagnetic interactions between randomly distributed Mn atoms. Both magnetization at 4.2 K and paramagnetic momentP _eff as a function of Mn concentration show a peak aroundx 44 which drops rapidly towards both sides of the Mn content.     

Hall and transverse even effects in the vicinity of a quantum critical point in Tm1 ? x Yb x B12

The angular, temperature, and magnetic field dependences of the resistance recorded in the Hall effect geometry are studied for the rare-earth dodecaboride Tm_{1 ? x} Yb _x B₁₂ solid solutions where the metal-insulator and antiferromagnetic-paramagnetic phase transitions are observed in the vicinity of the quantum critical point x _c ?? 0.3. The measurements performed on high-quality single crystals in the temperature range 1.9?C300 K for the first time have revealed the appearance of the second harmonic contribution, a transverse even effect in these fcc compounds near the quantum critical point. This contribution a is found to increase drastically both under the Tm-to-ytterbium substitution in the range x > x _c and with an increase in the external magnetic field. Moreover, as the Yb concentration x increases, a negative peak of a significant amplitude appears on the temperature dependences of the Hall coefficient R _H(T) for the Tm^{1 ? x} Yb _x B₁₂ compounds, in contrast to the invariable behavior R _H(T) ?? const found for TmB₁₂. The complicated activation-type behavior of the Hall coefficient is observed at intermediate temperatures for x ?? 0.5 with activation energies E _g /k _B ?? 200 K and E _a/k _B = 55?C75 K, and the sign inversion of R _H(T) is detected at liquid-helium temperatures in the coherent regime. Renormalization effects in the electron density of states induced by variation of the Yb concentration are analyzed. The anomalies of the charge transport in Tm_{1 ? x} Yb _x B₁₂ solid solutions in various regimes (charge gap formation, intra-gap many-body resonance, and coherent regime) are discussed in detail and the results are interpreted in terms of the electron phase separation effects in combination with the formation of nanosize clusters of rare earth ions in the cage-glass state of the studied dodecaborides. The data obtained allow concluding that the emergence of Yb-Yb dimers in the Tm_{1 ? x} Yb _x B₁₂ cage-glass matrix is the origin of the metal-insulator transition observed in the achetypal strongly correlated electron system of YbB₁₂.     

Enhancement of the colossal magnetoresistance in Eu1 − x Ca x B6

The transport and magnetic properties of single crystal samples of substitutional solid solutions Eu_{1 ? x} Ca _x B₆ (0 ≤ x ≤ 0.26) have been studied at temperatures 1.8–300 K in magnetic fields up to 80 kOe. It has been shown that an increase in the calcium concentration results in the suppression of the charge transport accompanied by an increase in the amplitude of the colossal magnetoresistance (CMR) up to the value (ρ(0) ? ρ(H))/ρ(H) ≈ 7 × 10⁵ detected for x = 0.26 at liquid-helium temperature in a field of 80 kOe. The transition from the hole-like conductivity to the electron-like conductivity has been observed in the Eu_0.74Ca_0.26B₆ solid solution in the CMR regime at T < 40 K. The Hall mobility values μH = 200?350 cm²/(V s) estimated for charge carriers in the strongly disordered matrix of the Eu_0.74Ca_0.26B₆ solid solution are comparable with the charge carrier mobility μH = 400?600 cm²/(V s) for the undoped EuB₆ compound. The anomalous behavior of the transport and magnetic parameters of the Eu_{1 ? x} Ca _x B₆ solid solutions is discussed in terms of a metal-insulator transition predicted within the double exchange model for this system with low carrier density.     

Chromium and cobalt diffusion in a ZnSe1 ? x S x solid solution

ZnSe_{1 ? x} S _x (1 ?? x ?? 0) crystals are grown from the vapor of binary components in a closed horizontal system. The ZnSe_{1 ? x} S _x crystals doped with chromium and cobalt are prepared by post-growth diffusion. Their absorption spectra are studied depending on the composition of the solid solution and the doping level. The diffusion coefficients of chromium and cobalt at the temperature 1040°C and their dependence on composition are determined.     

Calculation of the electronic structure and hyperfine fields for Fe1 − x Co x B and (Fe1 − x Co x )2B compounds by the Korringa-Kohn-Rostoker method

The magnetic properties of Fe_{1 ? x} Co _x B and (Fe_{1 ? x} Co _x )₂B disordered compounds were investigated using first-principles calculations of the electronic structure in the framework of the density functional theory with the Korringa-Kohn-Rostoker method. The concentration dependences of the magnetic moments and the electron density were calculated for the Fe_{1 ? x} Co _x B solid solutions. The results obtained were used to analyze in detail and to interpret the transition from a magnetic phase to a nonmagnetic phase, which was previously revealed from the experiments in the compounds under investigation. The performed analysis of the calculated hyperfine fields induced by the electronic shells at the iron and cobalt atoms in the (Fe_{1 ? x} Co _x )₂B borides made it possible to explain the experimentally observed magnetic anisotropy.     

Structure and magnetic properties of Fe96−x Zr x B4 nanowire arrays

Fe96-xZrx B4(1相似文献   

Specific features of plastic relaxation of a metastable Ge x Si1 − x layer buried between a silicon substrate and a relaxed germanium layer

Heterostructures Ge/Ge _x Si_{1 ? x} /Si(001) grown by molecular beam epitaxy have been investigated using atomic scale high-resolution electron microscopy. A germanium film (with a thickness of 0.5–1.0 μm) grown at a temperature of 500°C is completely relaxed. An intermediate Ge_0.5Si_0.5 layer remains in a strained metastable state, even though its thickness is 2–4 times larger than the critical value for the introduction of 60° misfit dislocations. It is assumed that the Ge/GeSi interface is a barrier for the penetration of dislocations from a relaxed Ge layer into the GeSi layer. This barrier is overcome during annealing of the heterostructures for 30 min at a temperature of 700°C, after which dislocation networks having different degrees of ordering and consisting predominantly of edge misfit dislocations are observed in the Ge/GeSi and GeSi/Si(001) heteroboundaries.     

Ion irradiation—a technique providing a criterion to distinguish between amorphous and nanocrystalline In1−x Pd x films

In_1–x Pd _x films with 0.2x0.75 have been prepared by vapour quenching at 4.2 K or 77 K, respectively. To test whether amorphous (a-) phases can be obtained in this way, the resistance behavior and the electron diffraction patterns of the as-prepared and annealed films were studied insitu. For films withx=0.25 additional information could be acquired from their superconducting behavior. Combining these results one concludes that a-phases exist for the compositional range 0.2x0.6, which are stable up to crystallization temperaturesT _x within the range 250 KT _x 420 K. Irradiation of the crystallized films at low temperatures (4.2 K or 77 K) with heavy ions (350 keV Ar⁺ or Kr⁺) leads to complete re-amorphization. Forx=0.67 corresponding to InPd₂ a nanocrystalline (n-) phase is obtained by vapour quenching at 77 K as inferred from x-ray diffraction. AtT _x =700 K, thesen-films exhibit a drop of the electrical resistance indicating the beginning of significant grain growth. After recooling, Kr⁺ bombardment at 77 K does not restore the high electrical resistance of the as-quenchedn-film. This result can be used as a criterion when studying quenched films withx=0.625 corresponding to In₃Pd₅. In this case, a resistance drop is found atT _x =600 K, but the diffraction techniques do not allow an uniquevocal distinction between amorphous and nanocrystalline. This becomes possible by low temperature ion irradiation after annealing atT>T _x . The bombardment results in resistance changes, which saturate well-below the value of the as-quenched sample implying nanocrystallinity for the latter. Based on this criterion, a phase-diagram for quenched In_1–x Pd _x is provided with 0x1 containing the newly detecteda- andn-phases.     

Miscibility of In x Ga1−x As alloys: a study using atomistic simulations

Atomistic simulations are used in combination with the two potential energy functions, namely, the Valence Force Field (VFF) model and the Tersoff model, to study the solution thermodynamics of In _x Ga_1?x As alloy. The simulation data, in the form of a T ? x diagram, is contrasted with the results obtained by using the Ho and Stringfellow approach. It is observed that for the VFF model, the upper critical solution temperature obtained from simulation data is approximately 850 K, which is higher than the 729 K predicted by the Ho and Stringfellow treatment. The composition range for which the two-phase heterogeneous region exists is wider than that predicted by the Ho and Stringfellow approach. The Tersoff model predicts a complex miscibility diagram, where the 850 K temperature corresponds to the approximate ‘eutectic’ temperature. Further improvement of model predictions may be made possible by investigation of temperature and composition dependent interaction parameter in a modified regular solution theory, and investigation of non-random, non-ideal solution models in the Ho and Stringfellow treatment, development of temperature dependent VFF model parameters and adjustment of Tersoff model parameters to account for longer range interactions which exist at temperatures above 850 K. The miscibility diagram constructed using the Tersoff model simulation data can be used to provide information on the phase stability and equilibrium Indium content at any given temperature for the crystalline solid solution.     

Specific heat of Ce x La1 − x B6 in the low cerium concentration limit (x ≤ 0.03)

The specific heat of high-quality Ce _x La_{1 ? x} B₆ (x = 0, 0.01, 0.03) single crystals is studied in the temperature range 0.4–300 K. LaB₆ samples with various boron isotope compositions (¹⁰B, ¹¹B, ^nat B) are analyzed to estimate the effect of boron vacancies. The experimental data are used to take into account the electron component correctly under the renormalization of the density of states at T < 8 K, the contribution of the quasi-local vibrational mode of a rare-earth ion with the Einstein temperature Θ_E ≈ 152 K, the Debye contribution from the rigid cage of boron atoms with the Debye temperature Θ_D ≈ 1160 K, and the low-temperature Schottky contribution related to the presence of 1.5?2.3% boron vacancies in the rare-earth hexaborides. The detected low-temperature anomalies in the specific heat are shown to be interpreted in terms of the formation of two-level systems with an energy ΔE = 92–98 K caused by the displacement of rare-earth ions from their centrosymmetric positions. A scenario of heavy fermion formation that is alternative to the Kondo mechanism is proposed for the systems with a magnetic impurity.     

Mössbauer study of amorphous (Fe1−x Ga x )84B16

Using the⁵⁷Fe Mössbauer effect the influence of the Ga content in amorphous (Fe_1?x Ga _x )₈₄B₁₆ on the average hyperfine fields \(\bar H\) and isomer shift has been studied. For the sample (Fe_0.98Ga_0.02)₈₄B₁₆ the \(\bar H\) , as well as the recoilless fraction,f _a were measured as functions of temperature ranging from 12 K to 300 K. The experimental results show a linear correlation between Inf _a and δ, and well as between δ andx. In the temperature range \(\bar H(T)\) can be described by the Brillouin function and the second-order Doppler shift is appreciable. The characteristic temperature for such an amorphous alloy is 372 K. the effective vibrating massM _eff=79 a.u.     

Electronic and magnetic properties of a new 2D diluted magnetic semiconductor La1 − x Ba x Zn1 − x Mn x AsO from Ab initio calculations

Very recently, on the example of hole- and spin-doped semiconductor LaZnAsO, quite an unexpected area of potential applications of quasi-two-dimensional 1111-like phases was proposed (C. Ding et al., Phys. Rev. B 88, 041102R (2013)) as a promising platform for searching for new diluted magnetic semiconductors (DMSs). In this work, by means of the ab initio calculations, we have examined in detail the electronic and magnetic properties of LaZnAsO alloyed with Ba and Mn. Our results demonstrate that Ba or Mn doping transforms the parent non-magnetic semiconductor LaZnAsO into a non-magnetic metal or a magnetic semiconductor, respectively. On the other hand, the joint effect of these dopants (i.e., co-doping Ba + Mn) leads to transition of La_0.89Ba_0.11Zn_0.89Mn_0.11AsO into the state of magnetic metal, which is formed by alternately stacked semiconducting non-magnetic blocks [La_0.89Ba_0.11O] and metallic-like magnetic blocks [Zn_0.89Mn_0.11As].     

Elastic stress fields caused by a dislocation in Ge x Si1−x /Si film-substrate system

The elastic stress fields caused by a dislocation in Ge_xSi_(1-x) epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system,the image method is further developed to determine the stress field of a dislocation in the film-substrate system under coupled condition. The film-substrate system is firstly transformed into a bimaterial system by distributing image dislocation densities on the position of the free surface. Then,the unknown image dislocation densities are solved by using boundary conditions,i.e.,traction free conditions on the free surface. Numerical simulation focuses on the Ge0.1Si0.9/Si film-substrate system. The effects of layer thickness,position of the dislocation and crystallographic orientation on the stress fields are discussed. Results reveal that both the stresses σxx,σxz at the free surface and the stress σxy,σyy,σyz on the interface are influenced by the layer thickness,but the former is stronger. In contrast to the weak dependence of stress field on the crystallographic orientation the stress field was strongly affected by dislocation position. The stress fields both in the film-substrate system and bimaterial system are plotted.     

Microwave properties of film Ba x Sr1 ? x TiO3 ferroelectric variconds with a magnesium-containing additive

The electrophysical properties of bulk ceramics based on Ba _x Sr_{1 ? x} TiO₃ solid solutions with a Mg-containing additive and planar variconds based on ferroelectric films obtained by the ion-plasma sputtering of targets with different elemental compositions are studied. Controllability n(U) = C(0)/C(U) and the dielectric loss tangent (tan??) of ferroelectric variconds are measured as functions of the elemental composition of the ferroelectric. The figure of merit of the variconds is estimated, and the film composition providing the best electrophysical parameters is determined.     

On the nature of a lattice vibrational mode at a frequency of 135 cm−1 in Hg1 − x Cd x Te alloys

The vibrational spectrum of a cadmium impurity atom in the HgTe crystal has been calculated using the microscopic theory of lattice dynamics in the approximation of a low impurity concentration. Within this theory, the behavior of the local and quasi-local modes induced upon substitution of the lighter Cd atom for the Hg atom in the region of the zero or very low one-phonon density of states in the HgTe crystal has been considered. It has been found that, apart from the local mode at a frequency of 155 cm^?1, the calculated vibrational spectra exhibit a weak (but clearly pronounced) feature at a frequency of 134 cm^?1, which coincides with the experimentally observed vibrational mode (the “minicluster” mode) at a frequency of 135 cm^?1 in the Hg_{1 ? x} Cd _x Te (x = 0.2–0.3) alloys at 80 K.     

Specific features of magnetoresistance during the antiferromagnet—paramagnet transition in Tm1 − x Yb x B12

The transverse magnetoresistance Δρ/ρ(H, T) of Tm_{1 ? x} Yb _x B₁₂ single crystals is studied in the ytterbium concentration range corresponding to the antiferromagnet-paramagnet transition in a magnetic field up to 80 kOe at low temperatures. A magnetic H-T phase diagram is constructed for the antiferromagnetic state of substitutional Tm_{1 ? x} Yb _x B₁₂ solid solutions with x ≤ 0.1. The contributions to the magnetoresistance in the antiferromagnetic and paramagnetic phases of the dodecaborides under study are separated. Along with negative quadratic magnetoresistance -Δρ/ρ ∝ H ₂, the magnetically ordered phase of these compounds is found to have component Δρ/ρ ∝ H that linearly changes in a magnetic field. The negative contribution to the magnetoresistance of Tm_{1 ? x} Yb _x B₁₂ is analyzed in terms of the Yosida model for a local magnetic susceptibility.     

LaAg x In1−x

The structures of LaAg _x In_1–x alloys withx=0.75, 0.89 are determined by neutron diffraction on powder samples. The space group isI4/mmm (D _4h ^/17 ). The lattice constants splitting, the order parameter and the mean square vibrational amplitudes of the atoms are given in the temperature range from 20 KT300 K.     

Pressure-induced non-linear optical properties in a wurtzite GaN/Al x Ga1− x N strained quantum dot

The effects of hydrostatic pressure on the exciton ground-state binding energy and the interband emission energy in a GaN/Al _x Ga_{1??? x} N quantum dot are investigated. The effects of strain and the internal field due to spontaneous and piezo-electric polarizations are included in the Hamiltonian. Numerical calculations are performed using variational procedure within the framework of single-band effective-mass approximation. The dependence of non-linear optical processes on the dot sizes is brought out in the influence of pressure. Pressure-induced optical properties are obtained using the compact density matrix approach. The effects of hydrostatic pressure on the linear, third-order non-linear optical absorption coefficients and the refractive index changes of the exciton as a function of photon energy are calculated. Our results show that the effects of pressure and the geometrical confinement have great influence on the optical properties of GaN/Al _x Ga_{1??? x} N dot.     

Adsorption of carbon monoxide on Si x Ge4– x (x = 0–4) nano-clusters: a hybrid meta density functional study

Theoretical study of carbon monoxide adsorption on Si _x Ge_{4 ? x} (x = 0–4) nano-clusters has been carried out using advanced hybrid meta density functional method of Truhlar (MPW1B95). MG3 semi-diffuse (MG3S) and correlation consistent valence basis sets with relativistic core potential were employed to improve the results. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. The geometry, adsorption energy, charge distribution, and vibrational frequency of CO adsorption on all possible structures were investigated. The maximum vibrational frequency changes occur in the bridge structures while the most stable structures occur when CO adsorbs on one silicon atom in a flat surface. The changes of spin densities arising through bridged structures with higher spin multiplicities were rationalized. Adsorption energies of CO on one Si atom are by far more negative than the corresponding value for on Ge atom, at the highest being nearly ?77 and ?35 kJ mol^?1. Comparison was made of adsorbed CO bridging neighbouring and diagonal Si atoms and the former was more stable, having adsorption energy of nearly ?77 kJ mol^?1. Flat surfaces adsorb CO more favourably. Exhaustive vibrational frequency analyses were performed to confirm the local minima energy of all optimized structures.