含有Alq3和Znq2的可交联聚合物的合成与表征

合成了溶解性优良、带有可聚合链段的8．羟基喹啉金属螫合物(Alq3和Znq2)单体,在室温下通过紫外光照射,形成热力学性能稳定、8．羟基喹啉金属螫合物含量高(50(wt)％以上)的交联聚合物。这种材料可以解决使用旋涂的方法制备器件带来的底层溶解的问题,从而实现大面积、多层电致发光器件的制备,还可以通过光刻手段实现器件涂层图案化,是器件实现全彩色、超像素方法之一。其光致发光和电致发光性质证明这种材料本身以及其加工性能在有机,高分子平面显示技术领域有一定应用价值。     

含8-羟基喹啉铝配合物的高分子聚合物的合成与表征

通过甲基丙烯酸甲酯(MMA)和含有8-羟基喹啉的单体共聚合成模板聚合物,再与二配体的8-羟基喹啉铝配合物(AlQ2)配位,实现了8-羟基喹啉铝配合物的高分子化,获得了一种高分子量金属配合物发光聚合物,并利用元素分析,FTIR,UV,PL光谱,GPC等方法对其结构和性能作了表征．     

核壳型Alq3@SiO2的一锅法制备

利用8-羟基喹啉铝(Alq3)与三乙胺之间路易斯酸碱相互作用的笼效应,以及正硅酸乙酯(TEOS)在三乙胺碱性条件下水解成二氧化硅的原理,经过正硅酸乙酯投料比例调控,成功通过一锅法在Alq3生成的过程中合成了表面由二氧化硅均匀包覆的核壳结构Alq3@SiO2.紫外-可见吸收光谱和荧光发射光谱表明,合成的Alq3@SiO2很好的保持了Alq3的光学性质.     

以5-取代-8-羟基喹啉和2-苯基吡啶为配体的金属铱配合物的合成、表征及光致、电致发光性质

本文通过在8-羟基喹啉的5位上引入氨基和取代的苯基,合成了系列二-[2-苯基吡啶（C^N）][5-取代-8-羟基喹啉（N^O）]铱（Ⅲ）配合物（（C^N）2IrQ）.这里CN代表2-苯基吡啶,Q代表5-取代-8-羟基喹啉.通过1HNMR、13CNMR、MS、元素分析、单晶X-衍射等对配合物的化学和晶体结构进行了表征.利用循环伏安、UV-Vis、光致和电致发光光谱等对它们的光物理性质进行了表征.热重分析表明苯环上的取代基对配合物热稳定性有很大影响.常温下,几种5-取代苯基喹啉铱配合物的溶液和固体产生红色磷光发射,光致发光（PL）光谱在666和687nm附近出现两个强度基本相等的发射峰.配合物的发光性质主要受喹啉环和5位苯基的影响,苯环上的取代基团对配合物的发光性质影响不大.而5-氨基喹啉铱配合物PL光谱的最大发射峰在550nm,其PL光谱主要受2-苯基吡啶的影响.将配合物二-[2-苯基吡啶（C^N）][5-（4-甲氧基苯基）-8-羟基喹啉（N^O）]铱（Ⅲ）（7b）掺杂在聚2,7-（9,9-二辛基）芴（PFO）和30%（质量分数）的2-对叔丁基苯基-5-对联苯基-1,3,4-口恶二唑（PBD）的主体材料中,制备了聚合物发光器件（OLED）,器件电致发光（EL）光谱的发射峰在672nm处,18V时最大亮度为350cd/m2,在电压14V时CIE色坐标值为（0.61,0.33）,是一红光OLED器件.     

发近红外光的高分子铒络合物的合成及性能研究

以1倍的三氯化铒(ErCl3)与2倍的8-羟基喹啉(Q)和1倍的5-(2-甲基丙烯酰乙氧基甲氧基)-8-羟基喹啉(HEMA-CH2-Q)反应合成了一种8-羟基喹啉铒络合物单体(ErQ2(HEMA-CH2-Q)),然后与N-乙烯基咔唑(NVK)通过自由基共聚合成了一种新型的高分子铒络合物(PCzErQ3).用元素分析、核磁共振谱(1 H-NMR)、红外光谱(FTIR)、凝胶渗透色谱(GPC)、差示扫描量热法(DSC)、热重分析(TGA)、紫外-可见(UV-Vis)吸收光谱、光致发光(PL)光谱和荧光寿命等方法对其进行结构表征和性能测试.该高分子铒络合物能溶于一般的有机溶剂,具有较好的热稳定性.光致发光光谱表明,通过激发配位基团(8-羟基喹啉)和光捕获基团(咔唑),该高分子铒络合物能发射铒离子的特征近红外光,在光通信和生物医学等领域具有广阔的应用前景.     

β-环糊精交联包结吸附树脂富集铜的研究

β 环糊精交联聚合物包结有机显色剂8 羟基喹啉所形成的配合物树脂可与多种金属离子反应生成包结配合物。报道了β 环糊精交联聚合物包结8 羟基喹啉以及形成的配合物树脂吸附铜的实验条件的研究。结果表明:在pH7、200mL L乙醇的溶液条件下,可制备β 环糊精交联聚合物包结8 羟基喹啉的包结吸附树脂;该包结树脂可从稀溶液中吸附铜,富集倍数达到100。     

聚8,8＇-二羟基-5,5＇-偶氮苯二喹啉金属螯合物的合成及荧光性质

羟基喹啉;自组装薄膜;聚8;8＇-二羟基-5;5＇-偶氮苯二喹啉金属螯合物的合成及荧光性质     

三价砷阴离子AsS43-的化合物[InAsS4(2，2’-bipy)]2的合成及性质

用水热法合成了含三价砷阴离子AsS3-4的化合物[InAsS4(2,2′-bipy)]2。 该化合物晶体为单斜晶系,空间群为P21/c,晶胞参数a=0.89799(9) nm,b=2.1794(2) nm,c=1.43736(14) nm,β=91.274(2)°,V=2.8123(5) nm3。 在此化合物中用金属螯合物[In(2,2′-bipy)]3+稳定了不常见的三价砷阴离子AsS3-4,讨论了金属价态对最终产物结构的影响,并且研究了该化合物的半导体性质(禁带带宽1.35 eV)。     

[Cu(HDPC)2]·(HOx)2·6H2O的合成及晶体结构

The new complex formulated [CU(HDPC)₂]·(HOx)₂·6H₂O(HDPC^- is pyridine-2,6-dicarb-oxylate,Hoxis 8-Hydroxyquindine) has been synthesized and the crystal structure was determined by X-ray diffraction .The crystal structure of the complex belongs to monoclinic system with space group C2/c. a=18.423(3)Å, b=10.384(2)Å,c=19.139(2)Å, α=γ=90°, β=111.050(10)°, V=3417.0(9)ų, Z=4, D_c=1.544Mg·m^-3, μ=0.722mm^-1. In the crystal Cu(Ⅱ) ion is six coordinated to form a distorted octahedron.     

2-(5,7-二氯/二溴-8-喹啉氧甲基)-4-苯基喹啉-3-羧酸乙酯的便捷合成(英文)

在K2CO3作为碱、乙腈作为溶剂的条件下,将2-氯甲基-4-苯基喹啉-3-羧酸乙酯(3)分别与5,7-二氯-8-羟基喹啉(4a)和5,7-二溴-8-羟基喹啉(4b)发生Williamson反应,以高收率得到结构新颖的二氯或二溴取代的双喹啉类目标化合物2-(5,7-二氯/二溴-8-喹啉氧甲基)-4-苯基喹啉-3-羧酸乙酯(2a,2b);其结构经波谱数据和元素分析证实.     

高分子化8-羟基喹啉锂的合成与静电自组装研究

设计合成了甲基丙烯酸二甲氨基乙酯(DM)含量为9.69%的丙烯酸甲酯共聚物(CPA),将制得的5-氯甲基-8-羟基喹啉(CHQ)挂接到CPA上,得到季铵型高分子化8-羟基喹啉(CPA-HQ)后,与金属离子Li+配位得到CPA-HQ-Li.化合物结构通过红外、紫外和荧光光谱等表征.多层超薄膜用CPA-HQ-Li和聚阴离子电解质(全氟磺酸)通过静电自组装制得.自组装膜的紫外和荧光相对于溶液(溶剂为四氢呋喃)发生了红移,膜的紫外吸收强度随组装膜层数增加线性增大,荧光强度随膜层数增加线性递减.高分子化8-羟基喹啉锂溶液和自组装膜的紫外和荧光光谱与文献报道一致.实验结果表明这种材料可用于有机电致发光器件(OLEDs)的制备.     

Instability Origin and Improvement Scheme of Facial Alq3 for Blue OLED Application

Degradation phenomenon and poor stability of tris(8-hydroxyquinoline) aluminum(III)(Alq₃)-based organic light-emitting diodes(OLEDs) have attracted much attention. In this paper, we discussed the origin of instability of the facial Alq₃-based blue luminescent OLEDs with the help of first-principles calculation. The results show that environmental humidity seriously affects the luminescence stability of Alq₃-based OLEDs. H₂O molecules in environment can be firmly bound to the oxygen atoms of the facial Alq₃, which then act as starting points for further degradation of Alq₃. Moreover, the interactions between facial Alq₃ and different cathode metal layers were investigated to explain the experiment phenomenon. A design guideline for diminishing the strong attraction from oxygen atoms can be proposed to protect Alq₃ and improve the stability of materials applied in OLEDs.     

Novel iridium complexes as high-efficiency yellow and red phosphorescent light emitters for organic light-emitting diodes

A series of novel biscyclometallated iridium complexes based on spirobifluorene ligands and acetyl acetonate (acac) ancillary ligands have been synthesized and characterized. Their electrochemical properties were investigated by cyclic voltammetry (CV). HOMO, LUMO, and energy band gaps of all the complexes were calculated by the combination of UV-vis absorption spectra and CV results. TGA and DSC results indicated their excellent thermal stability and amorphous structure. All the iridium complexes were fabricated into organic light-emitting devices with the device configuration of ITO/PEDOT:PSS (50 nm)/PVK (50 wt %):PBD (40 wt %):Ir complex (10 wt %) (45 nm)/TPBI (40 nm)/LiF (0.5 nm)/Ca (20 nm)/Ag (150 nm). Yellow to red light emission has been achieved from the iridium complexes guest materials. Complex C1 (yellow light emission) achieved an efficiency of 36.4 cd/A (10.1%) at 198 cd/m² and complex C4 (red light emission) reached external quantum efficiency of 4.6%. The slight decrease of external quantum efficiency at high current density revealed that the triplet-triplet (T₁-T₁) annihilation was effectively suppressed by the new developed complexes.     

白光有机电致发光器件进展

白光有机电致发光器件（WOLEDs）在显示和照明领域有着极大的应用前景,受到人们广泛的关注。本文从多个方面综述了WOLEDs近年来的研究进展,探讨了它的应用前景及需要解决的问题。     

氧化铟锡(ITO)自组装修饰及其对有机电致发光器件性能的影响

设计合成了一种新型的有机硅氧烷Cz-Si,并将其用于ITO自组装修饰。制备的Cz-Si具有较好的稳定性,可以在空气中对ITO进行自组装修饰,实验操作简单。为考察ITO自组装修饰对有机电致发光器件性能的影响,分别以修饰后的ITO(ITO/SAM)及不修饰的ITO(unmodified)作阳极,制备了一系列有机电致发光器件ITO/SAM(or unmodified)/NPB(40~50 nm)/Alq₃(60 nm)/LiF(1.0 nm)/Al。实验结果表明,ITO自组装修饰后器件性能可以得到显著提升,研究认为这与其调控ITO/有机层界面的电子能级、粗糙度以及界面一致性有关。     

氧化铟锡(ITO)自组装修饰及其对有机电致发光器件性能的影响

设计合成了一种新型的有机硅氧烷Cz-Si,并将其用于ITO自组装修饰。制备的Cz-Si具有较好的稳定性,可以在空气中对ITO进行自组装修饰,实验操作简单。为考察ITO自组装修饰对有机电致发光器件性能的影响,分别以修饰后的ITO(ITO/SAM)及不修饰的ITO(unmodified)作阳极,制备了一系列有机电致发光器件ITO/SAM(orunmodified)/NPB(40~50nm)/Alq₃(60nm)/LiF(1.0nm)/Al。实验结果表明,ITO自组装修饰后器件性能可以得到显著提升,研究认为这与其调控ITO/有机层界面的电子能级、粗糙度以及界面一致性有关。     

Comparative study of photoelectric properties of a copolymer and the corresponding homopolymers based on poly(3-alkylthiophene)s

As semiconducting materials in organic light-emitting devices (OLEDs), a novel, highly soluble poly[(3-octylthiophene)-co-(3-(2-ethyl-1-hexylthiophene))] (P3OTIOT) and the corresponding homopolymers (poly(3-octylthiophene) (P3OT) and poly(3-isooctylthiophene) (P3IOT)) were prepared by an FeCl₃-oxidative approach to compare their photoelectric properties. Characterization of the polymers included FT-IR, ¹H NMR, gel permeation chromatography (GPC), thermo-gravimetric analysis (TGA), UV-vis spectroscopy, photoluminescence (PL) and electroluminescence (EL). P3OTIOT and P3OT depicted excellent solubility in common organic solvents. TGA studies showed that all of the materials exhibited very good thermal stabilities, losing 5% of their weight on heating to 300 °C. The optical property investigations showed that the band-gap energy of P3OTIOT was similar to that of P3OT (2.43 eV) at 2.45 eV and 6% lower than that of P3IOT (2.6 eV) in CHCl₃ solution. In PL spectra, the emission maxima of P3OTIOT and P3IOT were 50 nm and 130 nm blue-shifted with respect to that of P3OT, respectively. However, the PL intensity of P3OTIOT was seven times higher than that of P3OT. Single layer polymer light-emitting devices (PLEDs) with the ITO/polymer/Ag configurations were fabricated by the spin-coating method with P3OT, P3IOT and P3OTIOT as the EL materials, which exhibited red (650 nm), orange-red (610 nm) and yellow-green (525 nm) EL, respectively. The external EL quantum efficiencies (QE) of P3IOT and P3OTIOT devices are 6.4 × 10⁻³% and 5.1 × 10⁻³% which are about five and four times higher than that of the P3OT device (1.2 × 10⁻³%), respectively. The turn-on voltage of the P3OTIOT device (5 V) is between that of the P3OT (4.5 V) and P3IOT (6 V) devices. These results indicated that the P3OTIOT combined the photoelectric properties of P3OT and P3IOT with excellent solubility, processability, low band-gap energy, high QE and low turn-on voltage in the PLEDs, and they might be excellent polymeric materials for applications in organic light-emitting diodes, light-emitting electrochemical cells and polymer solar cells.     

新型基于3,6-咔唑与噻吩衍生物的红光聚合物的合成与性能研究

用Suzuki偶合反应制备了一系列N-(2-乙基己基)-3,6-咔唑(Cz)与4,7-二(4-己基噻吩)-2,1,3-苯并噻二唑(DHTBT)的共聚物, 研究该类聚合物的电化学、光学和电致发光性能. 在薄膜状态下, 即使DHTBT含量为1%的聚合物也发生了从Cz链段到DHTBT单元的有效的能量转移. 光致发光光谱随着DHTBT含量的增加, 从645 nm红移至690 nm. PCzDHTBT1获得了71%的薄膜光致发光效率. 以该类聚合物为发光层的器件的EL光谱也随着DHTBT含量的增加从635 nm红移至680 nm. 由PCzDHTBT15制作的结构为ITO/PEDOT:PSS/polymer/Ba/Al的器件得到了0.61%的外量子效率.