结晶性和粒子尺寸对C60薄膜晶体管迁移率的影响

采用真空沉积方法在不同基片温度（30~190℃）和沉积压力（1×10^-4和1×10^-1 Pa）下制得了C₆₀薄膜。研究了薄膜的结晶性和晶粒尺寸对迁移率的影响。采用X射线衍射和原子力显微镜表征了薄膜的结构和形貌,发现提高基片温度,薄膜的结晶性和粒子尺寸均提高;提高沉积压力,薄膜的晶粒尺寸增大而结晶性不变。场效应测试结果表明,C₆₀薄膜的迁移率与其结晶性密切相关,高的结晶性有利于获得高迁移率;不同于平面有机半导体材料,对于球状C₆₀半导体材料,大的晶粒尺寸可能导致低迁移率。     

我国C60和碳纳米管的研究进展

自从C     

C60Co(Pph3)2的合成和表征

The fullerene complexe C₆₀Co(Pph₃)₂ has been prepared by the reaction of C₆₀ with CoCl₂(Pph₃)₂ under a nitrogen atmosphere and refluxing， and characterized by elemental analyses， FT-IR， XPS， NMR， which appove that C₆₀ coordinates to Co(Pph₃)₂ group in σ-π pattern and the electron is super conjugate over whole molecule. The result of redox property study show that the reduction potentiel of C₆₀Co(Pph₃)₂ is more negative than that of C₆₀， the reason may be the π electron dentensity of C₆₀ in C₆₀Co(Pph₃)₂ increases， which lead to it′s electron affinity decreasing. The thermostability experiment indicates that the oxidation decomposition temperature of C₆₀Co(Pph₃)₂ is lower than that of pure C₆₀.     

冠醚修饰的C60衍生物膜的电化学性质

采用同步循环伏安(CV)和电化学石英晶体微天平(EQCM)方法研究了冠醚(二苯并-18-冠-6)修饰的C60衍生物(DBCFP)固态膜在不同电解质的乙腈溶液中的电化学性质. 选择了连有刚性基团的C60衍生物PSF与DBCFP进行对比,提出了DBCFP膜在TBA+溶液中的反应机理.     

内含C60掺杂空穴传输层的量子点电致发光器件

聚乙烯咔唑（PVK）中掺入富勒烯（C₆₀）的重量比从0%到10%变化,以研究在空穴传输层中掺杂C₆₀后对量子点电致发光器件性能的影响。掺入C₆₀后的PVK薄膜在氧化铟锡（ITO）基底上均方根粗糙度从3nm降至1.6nm。另外,掺入C₆₀后有利于空穴的注入和传输,改善器件中电子和空穴的平衡,提高了器件的效率。     

水溶性C60衍生物在生物医学领域的研究现状

富勒烯C60具有完美的结构对称性和独特的物理化学性质,在生物医学、超导、光学和催化等领域有着极为广阔的应用前景。C60在水中的溶解度很低,与生物体的相容性差。这些特点限制了C60在生物医学领域的应用。因此人们合成出了多种水溶性的C60衍生物,并研究了它们的应用。本文综述了近年来水溶性C60衍生物在生物医学领域的研究,包括肿瘤治疗、药物或基因运载、抗氧化、与酶的相互作用、细胞毒性和其它应用,并对其未来的发展提出了展望。     

Y掺杂Ba0.90Sr0.08Ca0.02TiO3固溶体纳米晶粒尺寸 对其晶体结构的影响

The title nanocrystalline powders were prepared by sol-gel method, the influences of grain size on crystal structure were investigated by XRD and DSC techniques.The experiment results show that the tetragonal ferroelectric phase content of the powders and the Curie temperature Tc are increased with the increase of grain size.When the grain size is less than 34.7nm, crystal structure of the particle changes into cubic paraelectric phase and the transition of ferro-paraelectric phase disappears as well.     

C60的加成反应

富勒烯化学是以全碳分子球烯为母体的新兴有机化学领域, 在材料、医学及立体化学合成方法等方面具有广泛的应用和发展前景。本文综述了C₆₀的加成反应, 较全面地展示了富勒烯的化学性质。     

载有C60的TiO2纳米粒子光催化活性

以水溶性C₆₀和TiO₂粒子为前驱体,采用水热法制备了载有C₆₀的锐钛矿型TiO₂纳米粒子。应用X射线衍射、透射电子显微镜、红外光谱、紫外-可见漫反射光谱、荧光光谱对产物进行了表征。以对-硝基苯酚为模型污染物研究了产物的光催化活性,结果表明适量负载C₆₀可以提高TiO₂纳米粒子的光催化活性,C₆₀起着传输电子、促进TiO₂光生载流子分离的作用,且经7次循环使用后对-硝基苯酚的降解效率仍能达到74%。讨论了载有C₆₀的TiO₂纳米粒子光催化降解对-硝基苯酚的机理。     

富勒烯配合物C60Pd(Ph2PCH2CH2CH2CH2PPh2)的合成和光电性能

本文在惰性气氛中通过取代反应合成出富勒烯金属配合物C₆₀Pd(Ph₂PCH₂CH₂CH₂CH₂PPh₂)，采用元素分析、红外光谱、紫外可见光谱、光电子能谱以及X射线粉末衍射等手段对产物进行表征,同时研究了产物的氧化还原性能及热稳定性能。此外，在光电化学电池中测定了C₆₀Pd(Ph₂PCH₂CH₂CH₂CH₂PPh₂)在GaAs电极上形成n+n型异质结的光伏效应，结果表明：产物具有优良的光电转化性能，尤其是在BQ/H2Q介质电对中，光生电压最大达到212 mV；当C₆₀Pd(Ph₂PCH₂CH₂CH₂CH₂PPh₂)薄膜厚度为1 μm时，光伏效应值最大。     

The hydrogenolysis of C60 and C70

Temperature-programmed reaction (TPR) of C₆₀ and C₇₀ with H₂ was carried out on nickel in order to investigate the thermal stability of the fullerenes in the catalytic hydrogenation. The TPR profiles showed two methanation peaks and the corresponding weight decrease above 420°C, indicating the hydrogenolysis to CH₄. This revised version was published online in June 2006 with corrections to the Cover Date.     

溶液法制备氧化锌半导体薄膜及其顶栅极晶体管器件

采用旋涂法用浓度分别为0.05,0.10和0.25 mol·L^-1的氧化锌前躯体溶液制备了氧化锌薄膜,并且制备了基于氧化锌多层膜的顶栅极晶体管器件,其中以利用光刻工艺刻蚀的氧化铟锡为源漏电极。通过原子力显微镜(AFM)和X-射线衍射(XRD)分别表征了薄膜的形貌以及结晶情况,并且讨论了前躯体的浓度顺序对氧化锌多层膜的影响。按照浓度从大到小的顺序依次旋涂前躯体溶液制备的氧化锌薄膜表现出了较高的载流子迁移率(7.1×10^-3 cm²·V^-1·s^-1),而按照浓度从小到大的顺序依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率为5.2×10^-3 cm²·V^-1·s^-1。文中通过对两种多层薄膜的形貌和结晶性能的分析表明影响顶栅极薄膜晶体管性能的主要因素是薄膜的粗糙度。平整的薄膜有利于形成较好的半导体层/绝缘层接触界面,从而有利于提高器件的载流子迁移率。     

Organic Thin Film Transistors Based on 2,3‐Dimethylpentacene and 2,3‐Dimethyltetracene

2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO₂/Si surface. Thin film transistors prepared on SiO₂/Si and n‐nonyltrichlorosilane‐modified SiO₂/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO₂/Si substrate gave the highest field‐effect mobility of 0.46 cm²/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm²/Vs.     

Catalytic hydrogenation of C60 on transition metals

The catalytic hydrogenation of C₆₀ on Ru, Rh and Ir produced C₆₀H₁₈ mainly, while Pd, Pt, Co and Ni catalysts gave C₆₀H₃₆ principally. Very little activity was observed on Au and Fe. The higher hydrogenated fullerene obtained on Pd, Pt, Co and Ni was ascribed to the smaller % d-character of the metallic bond, on which the fullerene and hydrogen may more strongly be adsorbed. This revised version was published online in August 2006 with corrections to the Cover Date.     

n-型有机半导体插入层提高p-型并五苯薄膜晶体管性能(英文)

在金电极和p-型并五苯有源层之间插入n-型有机半导体层显著提高了并五苯薄膜场效应晶体管的性能。在插入2nm厚的N,N-bis(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl)-1,4,5,8-naphthalenetetracarboxylicdiimide(NTCDI-C8F)和N,N′-dioctyl-3,4,9,10-perylenedicarboximide(PTCDI-C8)层后,器件的阈值电压由-19.4V显著降低到-1.8和-8.7V、迁移率提高了约2倍、电流开关比保持在105~106。这为通过简单地在电极和有机半导体有源层之间引入其他有机半导体薄层的方法来构建具有低阈值电压和高迁移率特征的有机薄膜场效应晶体管器件提供思路。     

n-型有机半导体插入层提高p-型并五苯薄膜晶体管性能

在金电极和p-型并五苯有源层之间插入n-型有机半导体层显著提高了并五苯薄膜场效应晶体管的性能。在插入2 nm厚的N,N-bis（2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl） -1,4,5,8-naphthalenetetracarboxylic diimide（NTCDI^-C8F）和N,N’-dioctyl-3,4,9,10-perylenedicarboximide （PTCDI^-C8）层后,器件的阈值电压由-19.4 V显著降低到-1.8和-8.7 V、迁移率提高了约2倍、电流开关比保持在10⁵~10⁶。这为通过简单地在电极和有机半导体有源层之间引入其他有机半导体薄层的方法来构建具有低阈值电压和高迁移率特征的有机薄膜场效应晶体管器件提供思路。     

Preparation of CuInS2 Thin Film Using Sulfides Nanoparticle Precursor Ink

A low cost spin coating route of fabricating CuInS₂ polycrystalline thin films by reactive sin-tering method was put forward. The ink for spin coating was optimized by pre-reducing the precursor powders in hydrogen, which turned the nanoparticle precursor powders from mixed sulfides into a mixture of CuInS₂ and Cu-In metal alloys. The results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and Raman spectra showed that this optimization could highly improve the performance of CuInS₂ polycrystalline thin films, including higher packing density, less impurity phases, and better quality. The en-ergy gap of optimized CuInS₂ thin film was determined to be about 1.45 eV by absorption spectroscopy measurement.