半导体量子器件物理讲座第七讲半导体异质结光电探测器

光电探测器是一类用于接收光波并转变为电信号的专门器件，文章描述了PIN光电二极`管雪崩光电二极管、MSM（金属－半导体－金属）光电二极管的器件结构和工作原理，并对它们的响应度、噪声、带宽等特性进行了讨论，这类器件已在光通信、光信息处理等许多系统中得到广泛的应用。     

Low crosstalk monolithic wavelength demultiplexing switch arrays

Wavelength Division Multiplexing (WDM) is a key enabling technology for increasing the transmission capacity of optical fiber communication systems. Recently, a new family of optoelectronic devices, including detectors, switches, and emitters, that is based on resonant cavity enhancement, has emerged. Wavelength selective optoelectronic switching is achieved by placing a photothyristor in an asymmetric Fabry-Perot cavity, which provides a highly selective response at a wavelength determined during device fabrication. These WDM optoelectronic devices haue promising applications in optical COmmunications and optical logic circuits. Results on a N-p-n-p optoelectronic switch with a ten wavelength channel capability are presented.     

Optoelectronic multiplexer for digital data processing based on lipid crystal pixels and optical fiber elements

In this work, we present an optoelectronic digital multiplexer 4:1 based on a multipixel nematic liquid crystal cell. This device uses two optical control signals to select one among four possible optical data inputs. These data signals are generated by four red LEDs, which are guided through plastic optical fiber towards liquid crystal pixels. For our purpose, only four pixels of the cell will be used to modulate the optical signal across them. Each pixel will be addressed by a square waveform coming from the conditioning circuit managed by a microcontroller system. The electronic control allows the multiplexer to work as as simple two input logical gates such as AND, NAND, OR, NOR, XOR and XNOR. The operation time of the device is limited by the response time of LC cell that is in the millisecond range.     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

Theoretical analysis of the radiation effect on the transient behavior of optoelectronic integrated devices

Theoretical analysis of the radiation effect on transient behavior of an optoelectronic integrated device composed of a heterojunction phototransistor and a light emitting diode is studied theoretically. First, the transient behavior and the rise time of this device before radiation are investigated based on the frequency response of the constituent devices and the optical feedback inside the device. Second, the effect of neutron irradiation flux on the transient behavior of this device is theoretically studied. The results show that, by increasing the optical feedback inside the device, the rise time in the amplification mode is increased along with an increasing output, while that in the switching mode can be reduced effectively, and the neutron irradiation reduces the transient response and the rise time in both the amplification and switching modes. This type of model can be exploited as optical amplifier, optical switching device, and other applications.     

Optoelectronic memristor for neuromorphic computing

With the need of the internet of things,big data,and artificial intelligence,creating new computing architecture is greatly desired for handling data-intensive tasks.Human brain can simultaneously process and store information,which would reduce the power consumption while improve the efficiency of computing.Therefore,the development of brainlike intelligent device and the construction of brain-like computation are important breakthroughs in the field of artificial intelligence.Memristor,as the fourth fundamental circuit element,is an ideal synaptic simulator due to its integration of storage and processing characteristics,and very similar activities and the working mechanism to synapses among neurons which are the most numerous components of the brains.In particular,memristive synaptic devices with optoelectronic responding capability have the benefits of storing and processing transmitted optical signals with wide bandwidth,ultrafast data operation speed,low power consumption,and low cross-talk,which is important for building efficient brain-like computing networks.Herein,we review recent progresses in optoelectronic memristor for neuromorphic computing,including the optoelectronic memristive materials,working principles,applications,as well as the current challenges and the future development of the optoelectronic memristor.     

Optical flip-flop and astable nultivibrator functions by vertical and direct integration of heterojunction phototransistors and laser diodes

A optoelectronic integrated device in which six heterojunction phototransistors and two laser diodes are vertically and directly integrated is developed to achieve new functions important for optical signal processing and optical computing. It is demonstrated that the device has a bistable flip-flop function, in which the output portion is switched alternately by the corresponding optical input. The function is extended to a tristable flip-flop, which is especially important for multistable logic, by using multiple HPTS and their internal optical and/or electrical couplings. Moreover, an astable multivibrator function or a self-oscillating function, is successfully demonstrated by applying the interconnecting technique to the bistable flip-flop function.     

In situ characterization of optoelectronic nanostructures and nanodevices

One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.     

A diagrammatic method for analysis of GaAs and InP based optoelectronic devices

A modified version of the signal flow graphs method can be applied to reveal the topological structure of physical models describing the operation of optoelectronic devices based on heterostructures comprising A^IIIB^V semiconductor compounds. In particular, this kind of analysis is apt to reveal the presence of closed paths (feedback loops) in the causal make-up of the phenomena underlying function of the devices. The analytical apparatus associated with the diagrams affords a new formulation of criteria for the occurrence of such physical conditions as the bistability or the threshold behaviour. The approach is illustrated on the instances of injection semiconductor laser, nonlinear Fabry-Perot resonator, self-electro-optic effect device and semiconductor laser optical amplifier. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998 Support of the Grant Agency of the Czech Republic (project No. 102/99/0341) is gratefully acknowledged.     

<Emphasis Type="Italic">In situ</Emphasis> characterization of optoelectronic nanostructures and nanodevices

One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.     

全混洗交换Omega互连网络的光学实现

本文提出了一种由左、右全混洗和空间光开关列阵组成的等效Omega网络;成功地设计了一种实现全混洗互连的低损耗,等程的光学组合棱镜.由两块光学组合棱镜和空间光开关列阵组合成的光学系统实现了全混洗交换光学互连网络,该光学互连网络已在实验中得到了证实.     

Physical properties and device applications of graphene oxide

Graphene oxide (GO), the functionalized graphene with oxygenated groups (mainly epoxy and hydroxyl), has attracted resurgent interests in the past decade owing to its large surface area, superior physical and chemical properties, and easy composition with other materials via surface functional groups. Usually, GO is used as an important raw material for mass production of graphene via reduction. However, under different conditions, the coverage, types, and arrangements of oxygen-containing groups in GO can be varied, which give rise to excellent and controllable physical properties, such as tunable electronic and mechanical properties depending closely on oxidation degree, suppressed thermal conductivity, optical transparency and fluorescence, and nonlinear optical properties. Based on these outstanding properties, many electronic, optical, optoelectronic, and thermoelectric devices with high performance can be achieved on the basis of GO. Here we present a comprehensive review on recent progress of GO, focusing on the atomic structures, fundamental physical properties, and related device applications, including transparent and flexible conductors, field-effect transistors, electrical and optical sensors, fluorescence quenchers, optical limiters and absorbers, surface enhanced Raman scattering detectors, solar cells, light-emitting diodes, and thermal rectifiers.     

Electrical Scanning Probe Microscopy: Investigating the Inner Workings of Electronic and Optoelectronic Devices

Semiconductor electronic and optoelectronic devices such as transistors, lasers, modulators, and detectors are critical to the contemporary computing and communications infrastructure. These devices have been optimized for efficiency in power consumption and speed of response. There are gaps in the detailed understanding of the internal operation of these devices. Experimental electrical and optical methods have allowed comprehensive elaboration of input–output characteristics, but do not give spatially resolved information about currents, carriers, and potentials on the nanometer scale relevant to quantum heterostructure device operation. In response, electrical scanning probe techniques have been developed and deployed to observe experimentally, with nanometric spatial resolution, two-dimensional profiles of the electrical resistance, capacitance, potential, and free carrier distribution, within actively driven devices. Experimental configurations for the most prevalent electrical probing techniques based on atomic force microscopy are illustrated with considerations for practical implementation. Interpretation of the measured quantities are presented and calibrated, demonstrating that internal quantities of device operation can be uncovered. Several application areas are examined: spreading resistance and capacitance characterization of free carriers in III-V device structures; acquisition of electric potential and field distributions of semiconductor lasers, nanocrystals, and thin films; scanning voltage analysis on diode lasers—the direct observation of the internal manifestations of current blocking breakdown in a buried heterostructure laser, the effect of current spreading inside actively biased ridge waveguide lasers, anomalously high series resistance encountered in ridge lasers—as well as in CMOS transistors; and free-carrier measurement of working lasers with scanning differential spreading techniques. Applications to emerging fields of nanotechnology and nanoelectronics are suggested.     

In situ characterization of optoelectronic nanostructures and nanodevices

One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.     

SiGe optoelectronic metal-oxide semiconductor field-effect transistor

We propose a novel semiconductor optoelectronic switch that is a fusion of a Ge optical detector and a Si metal-oxide semiconductor field-effect transistor (MOSFET). The device operation is investigated with simulations and experiments. The switch can be fabricated at the nanoscale with extremely low capacitance. This device operates in telecommunication standard wavelengths, hence providing the surrounding Si circuitry with noise immunity from signaling. The Ge gate absorbs light, and the gate photocurrent is amplified at the drain terminal. Experimental current gain of up to 1000x is demonstrated. The device exhibits increased responsivity (approximately 3.5x) and lower off-state current (approximately 4x) compared with traditional detector schemes.     

一种光电混合集成有源光双稳器件

本文报道一种光电混合集成的有源双稳态器件,它仅由一只半导体激光器,两只PIN光电探测器及几只电子元器件构成.实验上得到了光学迟滞回线,显示了光开关、光存储、光脉冲整形等功能.文中简述了器件工作原理,光电混合集成制作工艺技术及性能指标.     

High-speed and broad optical bandwidth silicon modulator

A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach–Zehnder interferometer.Careful phase bias control and traveling-wave design are used to improve the high-speed performance.Over a broadband wavelength range,high-speed operation up to 30 Gbit/s with a 4.5 dB–5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.     

The under-pressure behaviour of mechanical,electronic and optical properties of calcium titanate and its ground state thermoelectric response

Abstract

In this study, the elastic, electronic, optical and thermoelectric properties of CaTiO₃ perovskite oxide have been investigated using first-principles calculations. The generalised gradient approximation (GGA) has been employed for evaluating structural and elastic properties, while the modified Becke Johnson functional is used for studying the optical response of this compound. In addition to ground state physical properties, we also investigate the effects of pressure (0, 30, 60, 90 and 120 GPa) on the electronic structure of CaTiO₃. The application of pressure from 0 to 90 GPa shows that the indirect band gap (Γ-M) of CaTiO₃ increases with increasing pressure and at 120 GPa it spontaneously decreases transforming cubic CaTiO₃ to a direct (Γ-Γ) band gap material. The complex dielectric function and some optical parameters are also investigated under the application of pressures. All the calculated optical properties have been found to exhibit a shift to the higher energies with the increase of applied pressure suggesting potential optoelectronic device applications of CaTiO₃. The thermoelectric properties of CaTiO₃ have been computed at 0 GPa in terms of electrical conductivity, thermal conductivity and Seebeck coefficient.     

石墨烯-硅基混合光子集成电路

近年来硅基光子学已经慢慢走向成熟,它被认为是未来取代电子集成电路,实现下一代更高性能的光子集成电路的关键技术.这得益于硅基光子器件与现代的互补金属氧化物半导体工艺相兼容,能够实现廉价的大规模集成.然而,由于受硅材料本身的光电特性所限,在硅基平台上实现高性能的有源器件仍然存在着巨大挑战.石墨烯-硅基混合光子集成电路的发展为解决这一问题提供了可行的方案.这得益于石墨烯作为一种兼具高载流子迁移率、高电光系数和宽带吸收等优点的二维光电材料,能够方便地与现有硅基器件相集成,并充分发挥自身的光电性能优势.本文结合我们课题组在该领域研究的一些最新成果,介绍了国际上在石墨烯-硅基混合光子集成电路上的一些重要研究进展,涵盖了光源、光波导、光调制器和光探测器四个重要组成部分.     

Measurement of the comb dynamics for feedback control of an etalon-based coupled optoelectronic oscillator

The response of an optical frequency comb from an etalon-based coupled optoelectronic oscillator to changes in drive current, optoelectronic loop phase, modulator bias, and laser cavity length has been measured. It is found that controlling the phase of the optoelectronic loop is best suited for control of the pulse repetition rate, whereas controlling the laser cavity length is best for stabilization of the optical carrier frequency. Moreover, by measuring the instabilities of the carrier frequency at the fixed-point frequency of the optoelectronic phase, changes to the optoelectronic phase can be decoupled from changes to the laser cavity.