Effect of size on dielectric constant for low dimension materials

Based on the consideration on size-dependent root of mean-square displacement of vibration of atoms (rms) σ(D), where D denotes the diameter of nanoparticles and nanowires or the thickness of thin films, size-dependent dielectric constants of low-dimensional materials are modeled without any adjustable parameter. The model predicts a decrease or an increase in dielectric constants with drop of D. The predicted results correspond to experimental and other theoretical results for particles and thin films of Si, CdSe, GaAs, H₂O and thiol.     

Static and dynamic properties of supercooled thin polymer films

The dynamic and static properties of a supercooled (non-entangled) polymer melt are investigated via molecular-dynamics (MD) simulations. The system is confined between two completely smooth and purely repulsive walls. The wall-to-wall separation (film thickness), D, is varied from about 3 to about 14 times the bulk radius of gyration. Despite the geometric confinement, the supercooled films exhibit many qualitative features which were also observed in the bulk and could be analyzed in terms of mode-coupling theory (MCT). Examples are the two-step relaxation of the incoherent intermediate scattering function, the time-temperature superposition property of the late time α-process and the space-time factorization of the scattering function on the intermediate time scale of the MCT β-process. An analysis of the temperature dependence of the α-relaxation time suggests that the critical temperature, T _c, of MCT decreases with D. If the confinement is not too strong ( D≥10monomer diameter), the static structure factor of the film coincides with that of the bulk when compared for the same distance, T - T _c(D), to the critical temperature. This suggests that T - T _c(D) is an important temperature scale of our model both in the bulk and in the films. Received 12 September 2001     

Peak effect in surface resistance at microwave frequencies in Dy-123 thin films

A pronounced peak in the microwave (at frequency 9.55 GHz) surface resistance, R _s vs. T plot (where T is the temperature) has been observed in epitaxial DyBa₂Cu₃O_7−y superconducting thin films in magnetic fields (parallel to c-axis) in the range 2 to 8 kOe, and temperatures close to the superconducting transition temperature T _c(H). Our data suggest that the nature of peaks observed in the two films is different, thereby indicating different defect structures in the films.     

Preparation of Pb2CrO5 thin films by an electron-beam evaporation technique

Pb₂CrO₅ thin films have been prepared by an electron-beam evaporation deposition technique on glass substrates using ceramic disks. The thin film fabrication conditions are studied by x-ray diffraction, replica electron micrography and scanning electron microscopy as parameters of substrate temperature, annealing temperature and annealing time. As-deposited Pb₂CrO₅ thin films in the amorphous state are crystallized by heat treatment. Annealed thin films are structurally classified into three types according to the preferred orientations which depend on substrate temperatures (T _s:

1. (i)

   (020) atT _s=room temperature

2. (ii)

   mainly (310) atT _s=100 ‡C, and

3. (iii)

   (200) atT _s=350 ‡C.

The substrate temperature contributes to film orientations; annealing temperature and time-enhance film crystallinity. The annealing temperature is fixed between 400 and 500 ‡C in making appropriate Pb₂CrO₅ thin films. These thin films, ranging between 0.3 and 2.0 Μm in thickness, are prepared at a deposition rate of 1500 å/m.

     

Finite size effect on critical transition temperature of superconductive nanosolids

A simple and unified model is developed for finite size effect on the critical transition temperature of superconductive nanosolids, which is based on the size-dependent Debye temperature of crystals within the McMillan expression. In the model, two material and structure dependent parameters of D₀ and α are used, which, respectively, are the critical size at which all atoms of a low-dimensional material are located on its surface, and the ratio of the mean square vibrational amplitude between surface atoms and interior atoms, In light of this model, the critical transition temperatures of superconductive nanosolids can decrease or increase with the dropping size of nanosolids depending on the bond strength changes of interfacial atoms. The predicated results are consistent with the available experimental results for superconductors MgB₂ and Nb thin films, Bi and Pb granular thin films and nanoparticles, Al thin films and nanoparticles.     

Variety of LaSrMnO structures induced by growth conditions and laser irradiation

Crystallographic phase transitions in perovskite-like LaSrMnO metallic oxides are studied. The transitions are induced when internal stresses generated during film synthesis (at temperatures between 450 and 730°C) vary (decrease or increase) upon subsequent irradiation by a KrF laser emitting in the UV range. As the synthesis temperature T _s grows, the rhombohedral-to-orthorhombic phase transition occurs at 650–670°C. The resistivity is shown to be either temperature-independent, ρ(T)=const, at T<T _crit, or varies and reaches a maximum, ρ(T)=ρ_max, at the Curie temperature T _c. Optical transmission spectra taken at photon energies ℏω=0.5–2.5 eV exhibit both a high (0.8–0.9) and low (0.1–0.3) transmission coefficient t, depending on the synthesis temperature. As follows from X-ray diffraction data, the laser irradiation causes a phase transition only in LaSrMnO films grown at T _s<650°C. Phases of different size scales appear: the long-range-order orthorhombic matrix and mesoscopic-range-order rhombohedral clusters are observed in the films grown at T _s=450–550°C and the rhombohedral matrix with orthorhombic clusters, in the films grown at T _s=550–650°C.     

Direct angle resolved photoemission spectroscopy and superconductivity of strained high-T c films

Since 1997 we systematically perform direct angle resolved photoemission spectroscopy (ARPES) on in-situ grown thin (<30 nm) cuprate films. Specifically, we probe low-energy electronic structure and properties of high-T _c superconductors (HTSC) under different degrees of epitaxial (compressive vs. tensile) strain. In overdoped and underdoped in-plane compressed (the strain is induced by the choice of substrate) ≈15 nm thin La_{2 − x} Sr _x CuO₄ (LSCO) films we almost double T _c to 40 K, from 20 K and 24 K, respectively. Yet the Fermi surface (FS) remains essentially two-dimensional. In contrast, ARPES data under tensile strain exhibit the dispersion that is three-dimensional, yet T _c drastically decreases. It seems that the in-plane compressive strain tends to push the apical oxygen far away from the CuO₂ plane, enhances the two-dimensional character of the dispersion and increases T _c, while the tensile strain acts in the opposite direction and the resulting dispersion is three-dimensional. We have established the shape of the FS for both cases, and all our data are consistent with other ongoing studies, like EXAFS. As the actual lattice of cuprates is like a ‘Napoleon-cake’, i.e. rigid CuO₂ planes alternating with softer ‘reservoir’, that distort differently under strain, our data rule out all oversimplified two-dimensional (rigid lattice) mean field models. The work is still in progress on optimized La-doped Bi-2201 films with enhanced T _c.      

A study on the microwave responses of YBCO and TBCCO thin films by coplanar resonator technique

YBa₂Cu₃O₇(YBCO) thin films have been prepared by thermal coevaporation on LaAlO₃(LAO) substrates, and Tl₂Ba₂CaCu₂O₈(TBCCO) thin films are synthesized by magnetron sputtering method on LAO substrates. The transition temperature T_c is 90\,K for YBCO/LAO and 104\,K for TBCCO/LAO. Microwave responses of the films are studied systematically by coplanar resonator technique. Energy gaps of the films obtained are {\it\Delta}₀=1.04k_BT_c for YBCO films and ${\it\Delta}_0=0.84k_BT_c for TBCCO films by analysing the temperature dependence of resonant frequencies of coplanar resonator. Penetration depth at 0\,K \lambda ₀=198nm for YBCO films and \lambda₀ =200nm for TBCCO films could also be obtained by using the weak coupling theory and two fluid theory. Results of penetration depth and energy gap confirm the weak coupling properties of the films. In addition, microwave surface resistances R_s of YBCO/LAO and TBCCO/LAO are also investigated by analysing the quality factor and insert loss of the coplanar resonator. Surface resistance of TBCCO/LAO is less than that of YBCO/LAO, so that TBCCO/LAO films may have more potential applications.     

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

Magnesium diboride (MgB₂) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB₂ thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature (T_c), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest T_c of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate (T_s) increased, T_c rose. However, the maximum T_s was limited due to the low magnesium sticking coefficient and thus the T_c value was limited as well. The highest T_c, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low T_c, did not have the well-developed MgB₂ grains while the films with higher T_c displayed the well-developed grains and smooth surface. Although the T_c of sputtered MgB₂ films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB₂ heterostructures using rather simple physical vapor deposition method such as sputtering.     

Critical currents in polycrystalline thin films of high-T c superconductors

Summary It is shown that the behaviour of the temperature dependence of the critical current in polycrystalline thin films of high-T _c superconductors depends crucially on the assumption made concerning the nature of the intergranular material. The usual assumption of a superconductor-insulator-superconductor (=SIS) ?sandwich? between each grain leads to a crossover fromI _c∼(1−T/T _c) toI _c∼(1−T/T _c)^3/2, for temperatures nearT _c (whereI _c is the critical current,T the absolute temperature, andT _c the superconducting transition temperature). Instead, for a superconductor-normal metal-superconductor (=SNS) sandwich the dependenceI _c∼(1−T/T _c)² is found for all temperatures. Consideration is given to the effect of self-magnetic field on the analysis. The comparison between expressions for continuous and granular systems is extended. Due to the relevance of its scientific content, this paper has been given priority by the Journal Direction.     

Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Influence of both substrate temperature, T_s, and annealing temperature, T_a, on the structural, electrical and microstructural properties of sputtered deposited Pt thin films have been investigated. X-ray diffraction results show that as deposited Pt films (T_s = 300, 400 °C) are preferentially oriented along (1 1 1) direction. A little growth both along (2 0 0) and (3 1 1) directions are also noticed in the as deposited Pt films. After annealing in air (T_a = 500-700 °C), films become strongly oriented along (1 1 1) plane. With annealing temperature, average crystallite size, D, of the Pt films increases and micro-strain, e, and lattice constant, a₀, decreases. Residual strain observed in the as deposited Pt films is found to be compressive in nature while that in the annealed films is tensile. This change in the strain from compressive to tensile upon annealing is explained in the light of mismatch between the thermal expansion coefficients of the film material and substrate. Room temperature resistivity of Pt films is dependant on both the T_s and T_a of the films. Observed decrease in the film resistivity with T_a is discussed in terms of annihilation of film defects and grain-boundary. Scanning electron microscopic study reveals that as the annealing temperature increases film densification improves. But at an annealing temperature of ∼600 °C, pinholes appear on the film surface and the size of pinhole increases with further increase in the annealing temperature. From X-ray photoelectron spectroscopic analysis, existence of a thin layer of chemisorbed atomic oxygen is detected on the surfaces of the as deposited Pt films. Upon annealing, coverage of this surface oxygen increases.     

Thermodynamic theory of the equation of state of materials

A universal derivation of the thermodynamic equations on the basis of a combined analysis of the exact relations for any material — the virial theorem, the shock adiabat, and the differential thermodynamic identity relating the thermic and caloric equations of state of matter — is given. This combination makes it possible to reduce the fundamental problem of thermodynamics to a boundary-value problem of mathematical physics. Analytic relations T _s=T(P _s,ρ _s and T _s=T(D,u) are obtained for classical systems. Zh. Tekh. Fiz. 68, 1–9 (October 1998)     

Proton conductivity and ferroelectric phase transition in hydrogen-bonded ferroelectric NH4IO3

We report on the ac dielectric permittivity (ε) and the electric conductivity (σ_ω), as function of the temperature 300?K?T4IO₃. The main feature of our measured parameters is that, the compound undergoes a ferroelectric phase transition of an improper character, at (368?±?1)K from a high temperature paraelectric phase I (Pm2₁ b) to a low temperature ferroelectric phase II (Pc21n). The electric conduction seems to be protonic. The frequency dependent conductivity has a linear response following the universal power law (σ_{( ω )}?=?A(T)ω ^{s (T)}). The temperature dependence of the frequency exponent s suggests the existence of two types of conduction mechanisms.     

Y1Ba2Cu3O7-δ thin films from KrF laser ablation with substrate heating and in situ patterning by CO2 laser radiation

Y₁Ba₂Cu₃O_7– thin films were deposited by KrF laser ablation while replacing conventional contact heating by cw CO₂ laser irradiation of the substrate front surface. The HTSC films obtained on (100)ZrO₂ showed T _c(R=0)=90 K, T(90–10%)=0.5 K, j _c=2.5 × 10⁶ A/cm², a sharp transition in the ac susceptibility X(T), and pure c-axis orientation. Micrographs of thin films (< 0.5 m) showed a smooth morphology while thick films (>1 m) contained many crystallites sticking in the bulk material. Furthermore, in situ patterning was achieved during deposition by local laser heating of a selected substrate surface area. The resulting planar films contained amorphous, semiconducting parts only 1 mm or less apart from crystalline material showing the above HTSC quality.Presented at LASERION '91, June 12–14, 1991, München (Germany)     

Raman-spectroscopy study of PbTiO3 thin films grown on Si substrates by metalorganic chemical vapor deposition

Raman spectra have been investigated in PbTiO₃ thin films grown on Si by metalorganic chemical vapor deposition. A large grazing-angle scattering technique was taken to measure the temperature dependence of Raman spectra below room temperature. All Raman modes in the thin films are assigned and compared with those in the bulk single crystal, a newA ₁(TO) soft mode at 104 cm^–1 was recorded which satisfies the Curie-Weiss relation ² =A(T _c –T). Intensities of theA ₁(1TO) andE(1TO) modes were anomalously strengthened with increasing temperature. Raman modes for the thin films exhibit remarkable frequency downshift and upshift which is related to the effect of internal stress.     

Wet‐Etching Induced Abnormal Phase Transition in Highly Strained VO2/TiO2 (001) Epitaxial Film

The metal–insulator transition (MIT) behavior in vanadium dioxide (VO₂) epitaxial film is known to be dramatically affected by interfacial stress due to lattice mismatching. For the VO₂/TiO₂ (001) system, there exists a considerable strain in ultra‐thin VO₂ thin film, which shows a lower T_c value close to room temperature. As the VO₂ epitaxial film grows thicker layer‐by‐layer along the “bottom‐up” route, the strain will be gradually relaxed and T_c will increase as well, until the MIT behavior becomes the same as that of bulk material with a T_c of about 68 °C. Whereas, in this study, we find that the VO₂/TiO₂ (001) film thinned by “top‐down” wet‐etching shows an abnormal variation in MIT, which accompanies the potential relaxation of film strain with thinning. It is observed that even when the strained VO₂ film is etched up to several nanometers, the MIT persists, and T_c will increase up to that of bulk material, showing the trend to a stress‐free ultra‐thin VO₂ film. The current findings demonstrate a facial chemical‐etching way to change interfacial strain and modulate the phase transition behavior of ultrathinVO₂ films, which can also be applied to other strained oxide films.     

Effect of misfit strain on the electrocaloric effect of polydomain epitaxial ferroelectric thin films

The effect of misfit strain on the electrocaloric effect in polydomain epitaxial BaTiO 3 thin films at room temperature is investigated using the Ginzburg-Landau-Devonshire thermodynamic theory. Numerical calculations indicate that the misfit strain has a large impact on the ferroelectric polarization states and the electrocaloric effect. Most importantly, the electrocaloric effect in the polydomain ca 1 /ca 2 /ca 1 /ca 2 phase is much larger than that in the monodomain c phase and the other polydomain phases. Consequently, a large electrocaloric effect can be obtained by carefully controlling the misfit strain, which may provide potential applications in refrigeration devices.     

On the preparation and the characterization of superconducting thin films of YBa2Cu3O7−x

The results of our initial efforts to deposit thin films of YBa₂Cu₃O_7−x system on sapphire substrate are described. The deposited films are shiny black in appearance and are of quite uniform chemical composition. The annealed films exhibit zero resistance superconducting transition temperatureT _c(R=0) ranging between 23 K and 30 K.     

Scaling models of thermodynamic properties on the coexistence curve: Problems and some solutions

Models consistent with the scaling theory of critical phenomena and capable of describing the thermodynamic properties F of substances on the coexistence curve, such as the density of the liquid ρ _l , density of the gas ρ _g , order parameter f _s , mean coexistence curve diameter f _d , and saturation pressure P _s are discussed. The models are presented in the form of equations F = (τ, D, C), where τ = (T _c ? T)/T _c , and D = (α, β, T _c , ρ _c , P _c , ...) are the critical characteristics, such as T _c , ρ _c , and P _c (temperature, density, and pressure, respectively), α and β are the scaling exponents, and C are adjustable coefficients. The authors developed combined models f(τ, D, C) for describing the indicated properties of a number of compounds (CH₄, NH₃, SF₆, water, methanol, ethanol, diethyl ether, and freons R134a, R143a, and R236ea). The coefficients C were determined based on experimental data over a wide temperature range, including the critical point. The equations derived are used to perform practical calculations, including estimates of the first and second derivatives of the saturation pressure with respect to the temperature in the critical region.     

Thermal lens spectrometry in pyroelectric lithium niobate crystals

In this work, the light-induced lens effect due to thermal and/or photorefractive processes was studied in pyroelectric (undoped and Fe²⁺-doped) lithium niobate crystals (LiNbO₃) using thermal lens spectrometry with a two-beam (pump–probe) mode-mismatched configuration. The measurements were carried out at two pump beam wavelengths (514.5 and 750 nm) to establish a full understanding of the present effects in this material (thermal and/or photorefractive). We present an easy-to-implement method to determine quantitative values of the pyroelectric coefficient (dP _s/dT), its contribution to the thermal effect and other thermo-optical parameters like thermal diffusivity (D), thermal conductivity (K) and temperature coefficient of the optical path length change (ds/dT). These measurements were performed in LiNbO₃ and LiNbO₃:Fe (0.1 ppm Fe²⁺) crystals with c axis along the direction of laser propagation.