Infrared laser spectroscopy of jet-cooled carbon clusters: structure of triplet C6

We report the first structural characterization of the triplet isomer of C6. Forty-one rovibrational/fine structure transitions in the nu 4(sigma u) antisymmetric stretch fundamental of the C6 cluster have been measured by diode laser absorption spectroscopy of a supersonic carbon cluster beam. The observed spectrum is characteristic of a centrosymmetric linear triplet state with cumulene-type bonding. The measured ground state rotational constant B0 = 0.048 479 (10)cm-1 and the effective bond length r(eff) = 1.2868 (1) angstroms are in good agreement with ab initio predictions for the linear triplet (3 sigma g-) state of C6.     

The nonlocal tensor operatorS 12 N (ρ, ρ′)

The extension of the tensor potentialS ₁₂ V _T (r) to the case of a nonlocal interaction is shown to be $$\begin{gathered} V_T (r{\text{,}}r'{\text{) = }}S_{12}^N F(r,r') \hfill \\ {\text{ = }}\tfrac{{\text{1}}}{{\text{2}}}[9(\rho \cdot \rho '{\text{)(}}\sigma _1 \cdot \rho \sigma _2 \cdot \rho '{\text{ + }}\sigma _1 \cdot \rho '\sigma _2 \cdot \rho {\text{)}} - 2(\sigma _1 \cdot \sigma _2 )]F(r,r'), \hfill \\ \end{gathered}$$ where ρ=r/r. This potential has the necessary invariance properties provided thatF(r, r′)=F(r′, r). With this potential andF(r, r′) taken to have a rank-one separable form, the behaviour of the model-deuteron radius with respect to the strength of the tensor nonlocality is investigated. It is found that the model radius decreases as the tensor nonlocality becomes more attractive. This is consistent with recent work which considers only central nonlocality.     

Localization in the ground-state of the one dimensionalX−Y model with a random transverse field

We consider the ground-state of the quantum spin model in one-dimension, where {h _i, iZ} are independent identically distributed random variables. By means of a Jordan-Wigner transformation the model is mapped into a free Fermi gas in the presence of a random external potential. We then use exponential localization of the one particle states to prove exponential decay for the spin-spin correlation functions.Partially supported by the NSF under grants DMS8702301 and INT8703059Partially supported by the CNPq under grant 303795-77FA     

Persistence in systems with algebraic interaction

Persistence in coarsening one-dimensional spin systems with a power-law interaction r(-1-sigma) is considered. Numerical studies indicate that for sufficiently large values of the interaction exponent sigma (sigma > or =1/2 in our simulations), persistence decays as an algebraic function of the length scale L, P(L) approximately L(-theta). The persistence exponent theta is found to be independent on the force exponent sigma and close to its value for the extremal (sigma-->infinity) model, theta =0.175 075 88. For smaller values of the force exponent (sigma < 1/2), finite size effects prevent the system from reaching the asymptotic regime. Scaling arguments suggest that in order to avoid significant boundary effects for small sigma, the system size should grow as [O(1/sigma)](1/sigma).     

High frequency conductivity in the quantum hall regime

We have measured the complex conductivity sigma(xx) of a two-dimensional electron system in the quantum Hall regime up to frequencies of 6 GHz at electron temperatures below 100 mK. Using both its imaginary and real part we show that sigma(xx) can be scaled to a single function for different frequencies and several transitions between plateaus in the quantum Hall effect. Additionally, the conductivity in the variable-range hopping regime is used for a direct evaluation of the localization length xi. Even for large filling factor distances deltanu from the critical point we find xi approximately equals deltanu(-gamma) with a scaling exponent gamma = 2.3.     

Thin film hexagonal gold grids as transparent conducting electrodes in organic light emitting diodes

Indium Tin Oxide (ITO) coated glass is currently the preferred transparent conducting electrode (TCE) for organic light emitting diodes (OLEDs). However, ITO has its drawbacks, not least the scarcity of Indium, high processing temperatures, and inflexibility. A number of technologies have been put forward as replacements for ITO. In this paper, an OLED based on a gold grid TCE is demonstrated, the light emission through the grid is examined, and luminance and current measurements are reported. The gold grid has a sheet resistance of 15 Ω□⁻¹ and a light transmission of 63% at 550 nm, comparable to ITO, but with advantages in terms of processing conditions and cost. The gold grid OLED has a lower turn‐on voltage (7.7 V versus 9.8 V) and achieves a luminance of 100 cdm⁻² at a lower voltage (10.9 V versus 12.4 V) than the reference ITO OLED. We discuss the lower turn‐on voltage and the uniformity of the light output through the gold grid TCE and examine the conduction mechanisms in the ITO and gold grid TCE OLEDs.     

Anisotropy in conductance of a quasi-one-dimensional metallic surface state measured by a square micro-four-point probe method

We have devised a "square micro-four-point probe method" using an independently driven ultrahigh-vacuum four-tip scanning tunneling microscope, and succeeded for the first time to directly measure anisotropic electrical conductance of a single-atomic layer on a solid surface. A quasi-one-dimensional metal of a single-domain Si(111)4 x 1-In had a surface-state conductance along the metallic atom chains (sigma(axially)) to be 7.2(+/-0.6) x 10(-4) S/square at room temperature, which was larger than that in the perpendicular direction (sigma(radially)) by approximately 60 times. The sigma(axially) was consistently interpreted by a Boltzmann equation with the anisotropic surface-state band dispersion, while the sigma(radially) was dominated by a surface-space-charge-layer conductance.     

Anderson localization of Bogolyubov quasiparticles in interacting Bose-Einstein condensates

We study the Anderson localization of Bogolyubov quasiparticles in an interacting Bose-Einstein condensate (with a healing [corrected] length xi) subjected to a random potential (with a finite correlation length sigma(R)). We derive analytically the Lyapunov exponent as a function of the quasiparticle momentum k, and we study the localization maximum k(max). For 1D speckle potentials, we find that k(max) proportional variant 1/xi when xi>sigma(R) while k(max) proportional variant 1/sigma(R) when xi相似文献   

微腔有机电致发光器件的角度依赖性

设计并制作了两个器件,一个是微腔有机电致发光器件(MOLED):G/DBR/ITO/NPB(46 nm)/DPVBi(20 nm)/Alq₃(56 nm)/LiF(1 nm)/Al(150 nm);一个是无腔器件(OLED):G/ITO/NPB(46 nm)/DPVBi(20 nm)/Alq₃(56 nm)/LiF(1 nm)/Al(150 nm)。测试并分析了器件性能。OLED在电流密度30 mA/cm²时的电致发光(EL)光谱随观测角度由0°~70°都是一宽谱带,是发光层DPVBi的特征发光谱,峰值都在452 nm处,半峰全宽均为70 nm,色坐标均为(x=0.18,y=0.19),无腔器件没有角度依赖性。相同电流密度下,微腔器件的EL谱随观测角度由0°~70°,发光峰值蓝移,由472 nm逐渐移至428 nm;峰值相对强度渐弱,由0.32变至0.02;半峰全宽由14 nm增加至120 nm;色坐标由(x=0.14,y=0.10)变至(x=0.19,y=0.25),颜色由紫蓝变成蓝白到接近白色。微腔器件具有明显的角度依赖性。     

基于新型连接层的有机叠层电致发光器件

制备了一种基于新的电荷生成层m-MTDATA∶MoO3的叠层有机电致发光器件。叠层器件与单发光层器件相比,发光亮度和电流效率均有成倍的提高。叠层器件的最大电流效率达到了30.06 cd/A,最大亮度为83 210 cd/m2,分别约为普通器件的2倍。除此之外,叠层器件在整个电流密度范围内的电流效率都很稳定。结果表明:m-MTDATA∶MoO3可以作为高效率的叠层有机电致发光器件的电荷生成层。     

Transient response of blue organic electroluminescence devices with short fluorescence lifetime of substituted phenyl/vinyl compound as an emissive layer

We have demonstrated a short fluorescence lifetime of the substituted phenyl/vinyl compound, 1,4-bis[2-[4-[N,N-di(p-tolyl)amino]phenyl]vinyl]benzene (DSB). The fluorescence lifetime of the 0.5 mol.% DSB-doped 4,4'-bis(9-carbazolyl)biphenyl film is 1.2 ns, which is desirable for organic light-emitting diode (OLED) light sources for optical interconnect applications. We have also examined frequency dependences on the electroluminescence (EL) intensity of the OLED and the photoluminescence (PL) intensity of the DSB film. The -3 dB cutoff frequency of the EL intensity is about 3 MHz for the optimized device, and the -3dB cutoff frequency of the PL intensity is about 160 MHz for the optically pumping DSB film.     

Self-focusing dynamics in monopolarly charged suspensions

The Smoluchowski equation for irreversible aggregation in suspensions of equally charged particles is studied. Accumulation of charges during the aggregation process leads to a crossover from power-law to sublogarithmic cluster growth at a characteristic time and cluster size. For larger times the suspension is usually called stable, although aggregation still proceeds slowly. In this regime the size distribution evolves towards a universal scaling form, independent of any parameter included in the theory. The relative width falls off to a universal value sigma(infinity)(r) approximately 0.2017 that is much smaller than in the uncharged case. We conjecture that sigma(infinity)(r) is a lower bound for the asymptotic relative width for all physical systems with irreversible aggregation.     

含新型噁二唑类电子传输层的有机发光二极管性能研究

含吡啶基的噁二唑类材料(PDPyDP)作为一种新型的电子传输层被有效地应用于可溶性聚对苯乙炔(MEHPPV)为发光层的双层结构的有机发光二极管器件中,并将其光电性能与MEHPPV的单层结构器件及分别含苯环(PDPDP)和反1,2亚乙烯基(PDVDP)的另外两种二唑类电子传输层的双层结构器件进行比较.EL光谱测量表明,它们的发光均来自于MEHPPV层,而它们相似的器件电流和光输出随驱动电场变化的规律表明这些器件中相似的电荷转移过程,但电致发光阈值电场对于双层结构器件来说低于单层结构器件,而插入PDPyDP层的器件,其阈值电场最低.在电流密度为50mA/cm²时,单层器件及各插入PDVDP、PDPDP和PDPyDP的双层器件的外量子效率相对值分别为3×10^-3%,5×10^-3%,2×10^-2%和0.1%.并分析了插入PDPyDP使器件发光性能提高最为明显的原因.通过将此类器件的结构等作进一步优化,其最佳量子效率可高达1.44%.     

Anderson localization of expanding Bose-Einstein condensates in random potentials

We show that the expansion of an initially confined interacting 1D Bose-Einstein condensate can exhibit Anderson localization in a weak random potential with correlation length sigma(R). For speckle potentials the Fourier transform of the correlation function vanishes for momenta k>2/sigma(R) so that the Lyapunov exponent vanishes in the Born approximation for k>1/sigma(R). Then, for the initial healing length of the condensate xi(in)>sigma(R) the localization is exponential, and for xi(in)相似文献   

二氧化钛改性8-羟基喹啉铝对有机电致发光器件抗老化性能的提高

以二氧化钛改性8-羟基喹啉铝复合材料(TiO₂-Alq₃)为发光层制备了有机电致发光器件(OLED).在器件未封装条件下,复合材料TiO₂-Alq₃制备的器件较纯Alq₃制备的器件抗老化性能有所提高.通过化学计量比调控,当钛酸四丁酯与硫酸铝的投料比为1:10时制备的复合材料TiO₂-Alq₃可获得抗老化性能最优的OLED器件.在空气中老化48 h后,该器件亮度仍保持在起始亮度的89.7%,电流效率保持在起始值的76.6%,而纯Alq₃制备的OLED器件在同样测试条件下已失活.     

真空和常规封装下有机发光器件寿命试验

对紫外固化环氧树脂封装的商品蓝光有机发光器件进行了打开封装后在高真空（10-5 Pa）环境下的寿命实验,同时对未开封的同样器件在大气环境下进行了同样参数的寿命实验。实验结果表明,高真空下未封装器件的加速寿命为1675 h,而大气下封装器件的加速寿命为1224 h。这一结果表明在高真空环境下,有机发光器件的寿命有明显的提高,这证明了水蒸气和氧气通过紫外固化环氧树脂封装材料的渗透是影响紫外环氧树脂封装有机电致的发光器体(OLED)寿命的重要因素;封装器件内的吸气片不能完全吸收经封装渗透进入器件内的水蒸气和氧气。除了水蒸气和氧气渗透封装的因素外,OLED的寿命过程还存在其他的重要影响因素。     

Observation of Bs production at the Y(5S) resonance

Using the CLEO detector at the Cornell Electron Storage Ring, we have observed the Bs meson in e+e- annihilation at the Y(5S) resonance. We find 14 candidates consistent with Bs decays into final states with a J/psi or a Ds(*)- . The probability that we have observed a background fluctuation is less than 8 x 10(-10) . We have established that at the energy of the Y(5S) resonance Bs production proceeds predominantly through the creation of Bs*Bs* pairs. We find sigma(e+e- --> Bs*Bs*) = [0.11(-0.03))(+0.04)(stat) +/- 0.02(syst)]nb , and set the following limits: sigma(e+e- --> BsBs)/ sigma(e+ e- --> Bs*Bs*) <0.16 and [sigma(e+e- --> BsBs*) + sigma(e+e- --> Bs*Bs)]/sigma(e+e- -->Bs*Bs*) < 0.16 (90% C.L.). The mass of the Bs* meson is measured to be M(Bs*) = [5.414+/- 0.001(stat) +/- 0.003(syst)] GeV/c2 .     

Combinatorial fabrication and screening of organic light-emitting device arrays

The combinatorial fabrication and screening of 2-dimensional (2-d) small molecular UV-violet organic light-emitting device (OLED) arrays, 1-d blue-to-red arrays, 1-d intense white OLED libraries, 1-d arrays to study Förster energy transfer in guest-host OLEDs, and 2-d arrays to study exciplex emission from OLEDs is described. The results demonstrate the power of combinatorial approaches for screening OLED materials and configurations, and for studying their basic properties.     

Dependence of stresses on grain orientations in BCC polycrystalline films on substrates

Most thin films have different thermal expansion coefficients from their substrates, thus thermal stresses will be introduced into the films when the temperature is changed during annealing and service. Calculations of these stresses for grains in various crystallographic orientations have been made for seven BCC transition metals Cr, Fe, Mo, Nb, Ta, V and W. Neglecting W, which is isotropic and the stresses are equiaxial and without grain orientation （hkl） dependence, the BCC metals may be grouped into two classes. In the first class （Cr, Mo, Nb and V）, the （100）-oriented grains have the largest stresses, while the stresses σ1 and σ2 in other （hkl）-oriented grains decrease linearly with the increase of the angle between （hkl） and （100）, and with σ1 〈 σ2 except in （100）- and （lll）-oriented grains. In the second class （Fe and Ta）, on the contrary, the （100）-oriented grains have the lowest stresses, and the stresses σ1 and σ2 in other （hkl）-oriented grains increase linearly with the increase of the angle between （hkl） and （100）, and with σ1 〉 σ2 except in （100）- and （111）-oriented grains.     

Observed effects of a changing step-edge density on thin-film growth dynamics

We grew SrTiO(3) on SrTiO(3)(001) by pulsed laser deposition, while observing x-ray diffraction at the (00(1/2)) position. The drop DeltaI in the x-ray intensity following a laser pulse contains information about plume-surface interactions. Kinematic theory predicts DeltaI/I = -4sigma(1 - sigma), so that DeltaI /I depends only on the amount of deposited material sigma. In contrast, we observed experimentally that |DeltaI /I| < 4sigma(1 - sigma) and that DeltaI /I depends on the phase of x-ray growth oscillations. The combined results suggest a fast smoothing mechanism that depends on surface step-edge density.