Colossal magnetoresistance in manganites as a multicritical phenomenon

The colossal magnetoresistance in manganites AMnO3 is studied from the viewpoint of multicritical phenomena. To understand the complicated interplay of various phases, we study the Ginzburg-Landau theory in terms of both the mean-field approximation and the renormalization-group analysis for comparison with the observed phase diagram. Several novel features, such as the first-order ferromagnetic transition and the dip in the transition temperature near the multicritical point, can be understood as being driven by enhanced fluctuations near the multicritical point. Furthermore, we obtain a universal scaling relation for the H/M versus M2 plot (Arrott plot), which fits rather well with the experimental data, providing further evidence for the enhanced fluctuation.     

Colossal magnetoresistance in pulsed laser-deposited thin ceramic films

Films of La_100−xCa_xMnO_z, where x = 34, 40 and 50, with perovskite structure, have been prepared by pulsed laser deposition. The films are non-epitaxial, polycrystalline and have cubic crystal structure at room temperature. The temperature variation of resistivity shows no evidence of an electrical phase transformation. The highest CMR observed is near 1800% at 55 K in a maximum applied field of 70 kOe (5600 kA/m). The results of temperature variation of susceptibility, hysteresis, resistivity and CMR properties follow a self-consistent behaviour.     

Colossal magnetocapacitance and colossal magnetoresistance in HgCr2S4

We present a detailed study of the dielectric and charge transport properties of the antiferromagnetic cubic spinel HgCr2S4. Similar to the findings in ferromagnetic CdCr2S4, the dielectric constant of HgCr2S4 becomes strongly enhanced in the region below 60-80 K, which can be ascribed to polar relaxational dynamics triggered by the onset of ferromagnetic correlations. In addition, the observation of polarization hysteresis curves indicates the development of ferroelectric order below about 70 K. Moreover, our investigations in external magnetic fields up to 5 T reveal the simultaneous occurrence of magnetocapacitance and magnetoresistance of truly colossal magnitudes in this material.     

Colossal magnetoresistance of the Sm1−x SrxMnO3 system

The results of investigating the temperature dependence of the resistivity, the differential magnetic susceptibility, and the magnetoresistance of a partially substituted perovskite Sm_1−x Sr_xMnO₃ (x=0.16–0.4) are presented. Colossal intrinsic magnetoresistance, reaching 90% in an external magnetic field of 30 kOe, is discovered in the compound with x=0.30 at 77 K. Fiz. Tverd. Tela (St. Petersburg) 39, 1831–1832 (October 1997)     

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

La1－xPrxMnO3(x=0.1，0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La_1-xPr_xMnO₃(x=0.1，0 .2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO₃单晶基底上.XRD结果显示 薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CM R)效应，其中磁电阻比率达95％(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体 系中Pr离子的价态为+4价，因此该薄膜很可能是电子掺杂的庞磁电阻体系. 关键词： 脉冲激光沉积 1-xPr_xMnO₃')" href="#">La_1-xPr_xMnO₃ 电子 掺杂 庞磁电阻     

Colossal magnetoresistance by avoiding a ferromagnetic state in the Mott system Ca3Ru2O7

Transport and magnetic studies of Ca3Ru2O7 for temperatures ranging from 0.4 to 56 K and magnetic fields B up to 45 T lead to strikingly different behavior when the field is applied along the different crystal axes. A ferromagnetic (FM) state with full spin polarization is achieved for the B//a axis, but colossal magnetoresistance is realized only for the B//b axis. For the B//c axis, Shubnikov-de Haas oscillations are observed and followed by a less resistive state than that for B//a. Hence, in contrast with standard colossal magnetoresistive materials, the FM phase is the least favorable for electron hopping. These properties together with highly unusual spin-charge-lattice coupling near the Mott transition (48 K) are driven by the orbital degrees of freedom.     

Colossal magnetoresistance without phase separation: disorder-induced spin glass state and nanometer scale orbital-charge correlation in half doped manganites

The magnetic and electrical properties of high-quality single crystals of A-site disordered (solid solution) Ln0.5Ba0.5MnO3 are investigated near the phase boundary between the spin-glass insulator and colossal-magnetoresistive ferromagnetic metal, locating near Ln=Sm. The temperature dependence of the ac susceptibility and the x-ray diffuse scattering of Eu0.5Ba0.5MnO3 are analyzed in detail. The uniformity of the random potential perturbation in Ln0.5Ba0.5MnO3 crystals with a small bandwidth yields, rather than the phase separation, an homogeneous short ranged charge or orbital order which gives rise to a nearly atomic spin-glass state. Remarkably, this microscopically disordered "charge-exchange-glass" state alone is able to bring forth the colossal magnetoresistance.     

Colossal magnetoresistive manganites

Magnetoelectronic features of the perovskite-type manganites are overviewed in the light of the mechanism of the colossal magnetoresistance (CMR). The essential ingredient of the CMR physics is not only the double-exchange interaction but also other competing interactions, such as ferromagnetic/antiferromagnetic superexchange interactions and charge/orbital ordering instabilities as well as their strong coupling with the lattice deformation. In particular, the orbital degree of freedom of the conduction electrons in the near-degenerate 3d e_g state plays an essential role in producing the unconventional metal–insulator phenomena in the manganites via strong coupling with spin, charge, and lattice degrees of freedom. Insulating or poorly conducting states arise from the long or short-range correlations of charge and orbital, but can be mostly melted or turned into the orbital-disordered conducting state by application of a magnetic field, producing the CMR or the insulator–metal transition.     

钙钛矿结构La0.9Sb0.1MnO3的庞磁电阻性质

一种新的钙钛矿结构的庞磁电阻氧化物La_0.9Sb_0.1MnO₃已用固态反应方法制 成，通过超导量子干涉器件(SQUID)装置测量研究了它的电输运性质和磁性质.x射线光电子 能谱分析证明，该氧化物中Sb的价态是+5价，因此该氧化物是一种新的电子掺杂型庞磁电阻 材料. 关键词： 钙钛矿结构 0.9Sb_0.1MnO₃')" href="#">La_0.9Sb_0.1MnO₃ 电子掺杂 庞磁电阻     

Colossal magnetoresistance effect in epitaxially grown La2/3Ca1/3MnO3 perovskite-like manganite thin films

We report in this work, study on colossal magnetoresistance (CMR) effect in epitaxial La_2/3Ca_1/3 MnO₃ thin films grown on SrTiO₃ (0 0 1) substrates by pulsed laser deposition (PLD) technique. The films were grown on as-received SrTiO₃ substrates and on SrTiO₃ substrates prepared by HF etching (Koster et al., Appl. Phys. Lett. 73 (1998) 2920; V. Leca et al., Wet etching methods for perovskite substrates, University of Twente, MESA+ Research Institute, Low Temperature Division). Two of the samples were annealed in different conditions to investigate the films heat treatment effect on electric and magnetic properties. Electrical resistance was done using the four-probe method at temperatures in the range of 2–375 K without a magnetic field and in an external field of 5 T applied in the film plane. Resistance-magnetic field (R vs. H) at 77 K for the two annealed samples was done in a 5 T sweep magnetic field. The surface morphology and structural information of the films were obtained using atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. Secondary ion mass spectroscopy (SIMS) analysis was performed on the annealed samples to investigate any possible chemical reaction between La_2/3Ca_1/3MnO₃ thin films and SrTiO₃ substrate.     

Colossal room-temperature magnetoresistance of La1/3Nd1/3Sr1/3MnO3 single crystals

Replacement of one half of the neodymium ions by lanthanum in Nd_2/3Sr_1/3MnO₃ is shown to result in a considerable increase in the Curie temperature. The single-crystal La_1/3Nd_1/3Sr_1/3MnO₃, whose Curie point lies at 315 K, has been found to exhibit a record-high magnetoresistance of 27% in a weak magnetic field of 8.4 kOe in the temperature range above room temperature.     

There is no roughening singularity at finite temperature

It is shown, for any non-zero temperature and finite coupling, that there are large transverse fluctuations in the electric flux tubes connecting quark-antiquark pairs. For large $\text{q}\text{q}$ separation L, the average distance of the flux tube from its equilibrium position diverges like $\text{√}\text{L}$. Hence the flux tube is rough. The consequent absence of a roughening singularity may imply that rotational invariance and the continuum limit are approached more gradually than at zero temperature.     

Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer

We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction and the two-step magnetization reversal process in this material.     

Dressing up a Reissner naked singularity

Spontaneous pair creation in the field of a large Reissner singularity (a point-like charge e whose mass M is such that $\text{MG}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{< e}$) is here considered. Using as a guide the definition of the positive and negative energy states of a classical particle in this field, a particular basis of quantum states is chosen which contains resonance states — these are interpreted by invoking particle creation. Extremely energetic particles are shown to burst out to infinity whereas the antiparticles dress up and neutralize the singularity. This result is contrasted with the process of pair production by black holes and compared with the isotropization of the early universe by creation of matter.     

Ballistic magnetoresistance in different nanocontact configurations: a basis for future magnetoresistance sensors

We report ballistic magnetoresistance (BMR) values in magnetic nanocontacts for Ni, Co, and Fe. The samples range from atomic nanocontacts (smaller than 1 nm cross-section) to stable electrodeposited nanocontacts (up to 30 nm cross-section). The experiments are done at room temperature and up to 4 kOe applied field. We obtain values of stable BMR up to 700%. By manipulating the resistance and the contact shape electrochemically in situ we can have any desired value of BMR. We also discuss BMR in Ni microclusters contacted through pinholes on thin oxides with nanometer thick Ni and Co films with BMR up to 15%. All the experiments show that the BMR is a very local effect of the size and shape of the nanocontact. In this respect 2D and 3D domain wall calculations are presented. The experiments reported here show that magnetic nanocontacts have potential for development of highly compacted sensor.