Electronic and optical properties of CuGaS2: First-principles calculations

Electronic structure and optical properties of CuGaS₂ are calculated using the full potential linearized augmented plane wave plus local orbitals method. The calculated equilibrium lattice is in reasonable agreement with the experimental data. The electronic structures indicate that CuGaS₂ is a semiconductor with a direct bandgap of 0.81802 eV. Furthermore, other experiments and theory also show that this material has a direct bandgap. It is noted that there is quite strong hybridization between Ga 3d and S 3s orbitals, which belongs to the (GaS₂)⁻. The complex dielectric functions are calculated, which are in good agreement with the available experimental results.     

Interference of resonance luminescence of exciton polaritons in CuGaS2 crystals

The nonmodulated and wavelength-modulated reflection spectra of CuGaS₂ crystals for the polarization EIIc of 10 K are studied. The states n = 1, 2 and 3 of the excitons Γ₄ (A-excitons) and n = 1, n = 2 of B- and C-excitons are found. The nonmodulated absorption spectra for the polarization E⊥c at 10 K have been studied. The states n = 1, 2 and 3 of Γ₅ excitons are found. The main parameters of the A (Γ₄, Γ₅) and B, C exciton series at the energies of the longitudinal and transverse excitons Γ₄ for the states n = 1 and n = 2, the effective masses of electrons and holes are determined. The photoluminescence peaks were observed at n = 3 and n = 4 of the excitons Γ₅ in the luminescence spectra excited by the line 4880 Å of Ar⁺ laser. In the luminescence spectra the interference is found.     

Birefringence of CuGa2S4 crystals

The interference of optical transmission spectra of thin CuGaS₂ single crystals is measured in E||c and E⊥c polarizations. The spectral dependencies of the refractive indexes n_o, n_e and Δn = n_o − n_e near the absorption edge have been determined from interference spectra. The intersection of refractive indexes at two wavelengths has been revealed at 300 K and 10 K. The characteristics of Band-Pass-Mode Filter and Band-Elimination-Mode Filter have been measured, which possess 7 narrow absorption (transmission) bands and represent a comb filter. The characteristics of these filters have been studied.     

Spin-dependent phonon Raman scattering in CdCr2Se4

Influences of ferromagnetic ordering on the phonon Raman scattering are studied for CdCr₂Se₄ through the intensity measurements of Raman spectra between 25 and 300 K with various wavelengths of excitation light (488.0–676.4 nm). Spin-dependent enhancements of Raman cross section are observed for optical phonon lines D(168 cm^?1) and F(238 cm^?1) with excitation wavelengths of about 630 and 550 nm, respectively. This kind of phenomenon in spinel-type chalcogen chromites seems to originate in spin-dependent intermediate interactions in the excited states of specific electronic transitions with which the incident or scattered light is resonant.     

Enhanced luminescence from transparent Ni-doped MgO–Al2O3–SiO2 glass ceramics by Ga2O3 addition

Transparent Ni²⁺-doped MgO–Al₂O₃–SiO₂ glass ceramics without and with Ga₂O₃ were synthetized. The precipitation of spinel nanocrystals, which was identified as solid solutions in the glass ceramics, could be favored by Ga₂O₃ addition and their sizes were about 7.6 nm in diameter. The luminescent intensity of the Ni²⁺-doped glass ceramics was largely enhanced by Ga₂O₃ addition which could mainly be caused by increasing of Ni²⁺ in the octahedral sites and the reduction of the mean frequency of phonon density of states in the spinel nanocrystals of solid solutions. The full width at half maximum (FWHM) of emissions for the glass ceramics with different Ga₂O₃ content was all more than 200 nm. The emission lifetime increased with the Ga₂O₃ content and the longest lifetime is about 250 μs. The Ni²⁺-doped transparent glass ceramics with Ga₂O₃ addition have potential application as broadband optical amplifier and laser materials.     

Enhanced luminescence from spontaneously ordered Gd2O3:Eu based nanostructures

Nanostructured Gd₂O₃:Eu³⁺ and Li⁺ doped Gd₂O₃:Eu³⁺ thin films were prepared by pulsed laser ablation technique. The effects of annealing and Li⁺ doping on the structural, morphological, optical and luminescent properties are discussed. X-ray diffraction and Micro-Raman investigations indicate a phase transformation from amorphous to nanocrystalline phase and an early crystallization was observed in Li⁺ doped Gd₂O₃:Eu³⁺ thin films on annealing. AFM images of Li⁺ doped Gd₂O₃:Eu³⁺ films annealed at different temperatures especially at 973 K show a spontaneous ordering of the nanocrystals distributed uniformly all over the surface, with a hillocks (or tips) like self-assembly of nanoparticles driven by thermodynamic and kinetic considerations. Enhanced photoemission from locations corresponding to the tips suggest their use in high resolution display devices. An investigation on the photoluminescence of Gd_2−xEu_xO₃ (x=0.10) and Gd_2−x−yEu_xLi_yO₃ (x=0.10, y=0.08) thin films annealed at 973 K reveals that the enhancement in luminescence intensity of about 3.04 times on Li⁺ doping is solely due to the increase in oxygen vacancies and the flux effect of Li⁺ ions. The observed decrease in the values of asymmetric ratio from the luminescence spectra of Li⁺ doped Gd₂O₃:Eu³⁺ films at high temperature region is discussed in terms of increased EuO bond length as a result of Li⁺ doping.     

Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy

Raman spectra for non-site-selectively and site-selectively Zn-doped CuGaS₂ layers grown by vapor phase epitaxy (VPE) were investigated. Although an appearance of characteristic Raman line(s) related with the doped Zn atom was not seen, an enhancement of the Raman intensity ratio of the highest LO mode to the A₁ mode (I_LO/I_A1) was observed. The site-selectively Zn-doped layers with p-type conductivity exhibited larger I_LO/I_A1 ratio compared to those with n-type conductivity. The observed correlation between the I_LO/I_A1 ratio and the peak energy of the photoluminescence characteristic for Zn-doped p-type samples (L emission) suggests that the enhancement of I_LO/I_A1 is due to the increase of Zn atom substituting Ga site (Zn_Ga) which is acting as an acceptor.     

Synthesis, vibrational and optical properties of a new three-layered organic-inorganic perovskite (C4H9NH3)4Pb3I4Br6

An organic-inorganic hybrid perovskite (C₄H₉NH₃)₄Pb₃I₄Br₆ was synthesized and studied by X-ray diffraction, Raman and infrared spectroscopies, optical transmission and photoluminescence. The title compound, abbreviated (C₄)₄Pb₃I₄Br₆, crystallises in a periodic two-dimensional multilayer structure with P2₁/a space group. The structure is built up from alternating inorganic and organic layers. Each inorganic layer consists of three sheets of PbX₆ (X=I, Br) octahedra. Raman and infrared spectra of the title compound were recorded in the 100-3500 and 400-4000 cm⁻¹ frequency ranges, respectively. An assignment of the observed vibration modes is reported. Optical transmission measurements, performed on thin films of (C₄)₄Pb₃I₄Br₆, revealed two absorption bands at 474 and 508 nm. Photoluminescence measurements have shown a green emission peak at 519 nm.     

Luminescence properties of spark-processed Si in air, O2, and N2 with low pressure

This paper reports the luminescence properties of spark-processed Si (sp-Si) prepared with different atmospheres such as air, O₂, and N₂ in low vacuum range (50-760 Torr). Three main luminescence bands are observed from spark-processed Si (sp-Si). In addition to the well-known two luminescence bands in the blue/violet peaking at 410 nm and green peaking at 500 nm, a novel UV luminescence band is detected for the sp-Si prepared in N₂. The temperature dependence of photoluminescence (PL) characteristics of the newly detected UV luminescence band is examined. Further studies of photoluminescence excitation (PLE) have been performed and origins of luminescence are discussed based on the experimental results.     

Preparation and luminescence of water soluble poly (N-vinyl-2-pyrrolidone)/LaF3:Eu nanocrystals

Lanthanide-doped luminescent nanocrystals have great potential as biological luminescent labels, but their use has been limited because of most of these nanocrystals are hydrophobic. In this work, water soluble LaF₃:Eu³⁺ down-conversion nanocrystals were prepared by encapsulated individual nanocrystals with polyvinylpyrrolidone (PVP). Their morphology, surface structure and luminescence properties were explored in detail. The results indicate that these nanocrystals can be readily dispersed in water, forming a stable and transparent colloidal solution. The colloidal solution displayed unique red luminescence with high emission intensity under ultraviolet excitation. These results suggest that these nanocrystals have great potential as luminescent labeling materials for biological applications.     

Electronic structure calculations and optical properties of a new organic-inorganic luminescent perovskite: (C9H19NH3)2PbI2Br2

(C₉H₁₉NH₃)₂PbI₂Br₂ compound is a new crystal belonging to the large hybrid organic-inorganic perovskites compounds family. Optical properties are investigated by optical absorption UV-visible and photoluminescence (PL) techniques. Bands to band absorption peak at 2.44 eV as well as an extremely strong yellow-green photoluminescence emission at 2.17 eV is observed at room temperature. First principle calculations based on the DFT and FLAPW methods combined with LDA approximation are performed as well. Density of state close to the gap is presented and discussed in terms of optical absorption and photoluminescence experimental results. The perfect agreement between experimental data and electronic structure calculations is highlighted.     

Synthesis and luminescence of SrZnO2 phosphors

SrZnO₂ phosphors have been synthesized by two new methods viz. carbonate decomposition at 1000 °C and combustion synthesis. Phosphors activated with Pb²⁺, Sm³⁺, Tb³⁺, Bi³⁺ and Pr³⁺ could be prepared in one step using the combustion synthesis. Characteristic emission and excitation were observed for Bi³⁺. For the remaining activators excitation spectra always contained a band at 283 nm. Presence of this band for all these different types of activators was interpreted as host sensitization.     

First order phonon and magnon Raman scattering in KCoF3

At T=2°K, a magnon and a phonon Raman line is observed respectively at 38.5 and 56.7 cm^?1. The last one arises from an acoustic phonon at R point in the paramagnetic Brillouin zone, coupled to the magnon in the magnetically ordered phase.     

Optical properties of CH3NH3PbI3 crystal grown using inverse temperature crystallization

Perovskite CH₃NH₃PbI₃ (MAPbI₃) single crystal was grown using inverse temperature crystallization method. Crystallinity of the perovskite was confirmed by X-ray diffraction. Photoluminescence (PL) spectra revealed abnormal behavior due to a temperature-induced orthorhombic to the tetragonal phase transition. Four PL emission peaks, A, B, C, and D, were observed in the low temperature regime. Peaks A and B were observed at 756 and 776?nm?at 12?K, and were blue-shifted and disappeared at 130 and 70?K, respectively. Peaks C and D were observed at 789 and 807?nm?at 40?K and were also blue-shifted to 780 and 794?nm?at 100?K. On the other hand, the peak C red-shifted to 799?nm from 100 to 140?K because of an orthorhombic to the tetragonal phase change and was also blue-shifted above 140?K. From the excitation intensity- and temperature-dependent PL results, peaks A and B were assigned to the free-exciton and bound-exciton of the orthorhombic phase crystal, respectively. In addition, peaks C and D were associated with the free-exciton and bound-exciton of the tetragonal phase crystal, respectively. The activation energy of peak C was calculated to be 98?meV from temperature dependence of the PL intensity.     

Bound exciton in CuGaS2

In CuGaS₂ crystals absorption and luminescence spectra at the temperature 9 K at excitation by different wavelengths of Ar laser are investigated. A series of lines available in luminescence and absorption spectra is found. Another series of lines is found only in absorption spectra. The found series of lines of absorption and luminescence are determined by excitons bound on neutral acceptor. A model of electron transitions between the energy levels of the exciton bound on neutral acceptor is proposed.     

Dynamics of F2 centers in LiF: One phonon sideband and Raman scattering

The vibrational structure of the F₂⁺ emission in LiF was investigated, together with the resonant Raman scattering from the first excited electronic state. The one phonon sideband of the emission and the resonant Raman spectrum were found to be very similar, as expected for transitions involving non degenerate electronic states.     

Manganese-doped CdGeAs2, ZnGeAs2 and ZnSiAs2 chalcopyrites: A new materials for spintronics

Based on Mn-doped chalcopyrites CdGeAs₂, ZnGeAs₂ and ZnSiAs₂ the new dilute magnetic semiconductors with p-type conductivity were produced. Magnetization, electrical resistivity, magnetoresistance and Hall effect of mentioned compositions were studied. Their curves of temperature dependence of magnetization have the similar form in spite of complicated character, for which the concentration and mobility of the charge carriers are responsible. Thus, for T<15 K, these curves are characteristic for superparamagnetics and for T>15 K for a frustrated ferromagnetics. In compounds with Zn these two states dilute by spinglass-like state. This specific feature is assigned to an attraction of Mn ions occupying neighboring sites and to the competition between the carrier-mediated exchange and superexchange interactions. Curie temperatures of these compounds are above room temperature. These are the highest Curie temperatures in the A^IIB^IVC^V₂:Mn systems.     

Near infrared and visible luminescence of U-doped PbCl2 single crystals

Good optical quality U³⁺-doped PbCl₂ single crystals of the composition Pb_0.99U_0.01Cl₂ have been obtained by the Bridgman-Stockbarger method. Luminescence spectra of the crystals were recorded in a wide spectral range at room and liquid nitrogen temperatures, and are discussed. Strong infrared emission was observed under 514 nm laser pumping to the 5f²6d¹ bands. The lifetimes of the emitting levels in the visible and near infrared region are given.     

Photo-operated two-photon absorption effects in the GeSe2–Ga2S3–PbI2 glasses

The possibility to operate the two-photon absorption (TPA) of newly synthesized GeSe₂–Ga₂S₃–PbI₂ glasses using the CO laser beam (λ=5.5 μm) as a photoinducing one has been demonstrated. As the fundamental laser beam we have used the illumination of 10.6 μm passively modulated 0.5 ns CO₂ laser with a rate repetition of about 10 Hz. We have established that the maximal photoinduced TPA is observed for the 8% doped samples (up to 14 cm/GW), which is achieved at a pump CO laser pump power density equal to about 0.6 GW/cm². The undoped PbI₂ samples show the TPA maximum at a pump power density of about 0.2 cm/GW. The minimal TPA values were observed for the samples with 5% of PbI₂. The obtained results show that these materials can be used as effective optically operated optical limiters.     

Temperature variation of the fundamental absorption edge in AgGaSe2

Optical absorption measurements were made in the temperature range 9–300 K on the chalcopyrite semiconductor compound AgGaSe₂ and the optical energy gap E_G determined as a function of temperature T. In order to obtain the values of E_G as a function of T, the Elliot-Toyozawa model [R.J. Elliot, J. Phys. Rev. 108 (1957) 1384; D.D. Sell, P. Lawaets, Phys. Rev. Lett. 26 (1971) 311] was employed to perform the analysis of the optical absorption spectra. The resulting E_G vs. T curve was fitted to a semi-empirical model that takes into account both the thermal expansion and the electron–phonon interaction contributions. The results have been used to estimate values of the deformation potentials of the valence and conduction bands of the compound.