THERMALLY ACTIVATED HOPPING IN Dy1-xPrxBa2Cu3O7-δ SYSTEM

The temperature dependence of resistivity in Dy_1-xPr_xBa₂Cu₃O_7-δ system with x>0.6 was measured. The experimental results show that Pr substitution leads to the localization of mobile holes and such a localization is enhanced with increasing Pr concentration. The gradually enhancing of localization induces Anderson transitions one by one in this system, including the transition from the conduction by excitation of holes to the one by thermal activation hopping between localized states, the so called Anderson transition type-I, and the transition from nearest neighbor hopping (NNH) to variable range hopping (VRH), the Anderson transition type-II, and the Anderson transition type-lI from 3D to 2D.     

PHASE TRANSITIONS IN Bi2Sr2(Cu1-zFez)O6+δ

We have investigated, by X-ray diffraction, a series of single crystals of Bi-based oxides with the nominal composition Bi₂Sr₂(Cu_1-zFe_z)O_6+δ(0≤z≤0.55). In this system we observed two structural phase transitions with the increase of the doping content. The first transition, from an incommensurate monoclinic phase to an incommensurate orthorhombic phase, occurs at a doping content of iron z_Fe=0.027. The second one corresponds to a phase transition from an incommensurate orthorhombic phase to a commensurate orthorhombic phase at z_Fe=0.34. The comparison of these results with those for more limited substitutions of Zn and Ni indicates the significant role of the insertion of the extra oxygen in the (Bi-O)_∞ double layers.     

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.     

ELECTRONIC STRUCTURE OF Hg0.8Pb0.2Ba2Ca2Cu3O8+δ: THE ROLE OF Pb DOPING, OXYGEN DOPING AND HIGH PRESSURE

The effects of Pb doping, oxygen doping (δ= 0.1,0.2,0.4 and 0.5) and high pressate (4, 8, 15 and 20GPa) on the electronic structure of Hg_0.8Pb_0.2Ba₂Ca₂Cu₃O_8+δ have been examined by the recursion method. Our calculations show that Pb doping only decreases the hole concentration slightly and oxygen doping increases the hole concentration monotonically and significantly as δ varies from 0 to 0.5, with each excess oxygen atom contributing about 1.7 holes to the CuO₂ layers. The optimal δ is estimated to be around 0.4, The hole conceatration increases initially with pres-sure but decreases as P > 8GPa (i.e., dn/dP does change sign at ～ 8GPa). The suppressed T_c(P) by Pb substitution has to be described in the modified Neumeier's model.     

Non-Hermitian Kitaev chain with complex periodic and quasiperiodic potentials

We study the topological properties of the one-dimensional non-Hermitian Kitaev model with complex either periodic or quasiperiodic potentials. We obtain the energy spectrum and the phase diagrams of the system by using the transfer matrix method as well as the topological invariant. The phase transition points are given analytically. The Majorana zero modes in the topological nontrivial regimes are obtained. Focusing on the quasiperiodic potential, we obtain the phase transition from the topological superconducting phase to the Anderson localization, which is accompanied with the Anderson localization–delocalization transition in this non-Hermitian system. We also find that the topological regime can be reduced by increasing the non-Hermiticity.     

OPTICAL PROPERTIES OF δ-DOPED GaAs AND GaAs/Al0.1Ga0.9As SUPERLATTICES

Radiative transition in δ-doped GaAs superlattices with and without Al_0.1Ga_0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of δ-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained.     

SUPERCONDUCTING TRANSITION TEMPERATURES AND NORMAL-STATE ELECTRICAL RESISTIVITIES OF Tm1-xPrxBa2Cu3O7-δ

Superconducting transition temperature T_c and normal-state electrical resistivities ρ of the Tm_1-xPr_xBa₂Cu₃O_7-δ system have been measured. The results indicate that T_c remains constant for x = 0 to 0.08 before it drops steadily with higher x. Following the Abrikosov-Gor'kov model, a total suppression of superconductivity occurs at a critical Pr concentration x_cr≈0.56. It is found for the first time, as far as we know, that the logarithmic resistivity at 270 K increases linearly with increasing x, yielding ρ= ρ₀e^ax. Judging from the relation between dρ/dT and x, a metal to insulator transition occurs just beyond x_cr.     

Solvent effects on the S0→S2 absorption spectra of β-carotene

Absorption spectra of β -carotene in 31 solvents are measured in ambient conditions. Solvent effects on the 0--0 band energy, the bandwidth, and the transition moment of the S₀ → S₂ transition are analysed. The discrepancies between published results of the solvent effects on the 0--0 band energy are explained by taking into account microscopic solute-solvent interactions. The contributions of polarity and polarizability of solvents to 0--0 band energy and bandwidth are quantitatively distinguished. The 0--0 transition energy of the S₂ state at the gas phase is predicted to locate between 23000 and 23600~cm^-1.     

A method based on magnetic moment measurement to identify the structural transition of quenched Fe1 -xGax (x = 0.15ben 0.30) alloys

A method based on the measurement of Fe average atomic magnetic moment to identify the structural transition caused by the increase of Ga content in quenched Fe_{1 - x}Ga_x alloys (0.15 ≤ x ≤ 0.30) is proposed. The quenched Fe_{1 - x}Ga_x alloys show a change of the Fe average atomic magnetic moment from 2.25 μ_B to 1.78 μ_B and then to 1.58 μ_B, which corresponds to the structural transition from A2 to D0₃ and then to B2. The relationship between the structure and the magnetostriction is clarified, and the maximum magnetostriction appears in the A2 phase. The variation tendency of the magnetostriction is well characterized, which also reflects the structural transition.     

ANISOTROPY OF CRITICAL CURRENT DENSITY IN c-AXIS ORIENTED EPITAXIAL YBa2Cu3O7-δ FILMS

The dependence of critical current density J_c on the angle α between the directions of the applied magnetic field H (which was rotated in the c-axis-I plane) and the in-plane current I was measured on a c-axis oriented epitaxial YBa₂Cu₃O_7-δ films at 81 K, with the magnetic field strength up to 6T. Analysis of the experimental results on the basis of the classical scaling law of pinning force shows that there exist simultaneously planar-pinning and volume-pinning mechanisms, and the contribution of volume pinning increases wish decreasing while that of the planar pinning decreases, We propose that the decrease of Lorentz-force-independent critical current density with increasing H for H∥I results from the suppression of superconductivity by the magnetic field, The fact that the contribution of volume pinning increases with decreasing α also arises from the suppression of superconductivity in CuO₂ plane by the magnetic field.     

STRUCTURE AND PROPERTIES OF THE La-DOPED Bi-2201 SYSTEM

In this article, the influence of La substitution for Sr on structure and physi-cal properties of the 2201 phase is studied. First, the crystal microstructure of the Bi_2.1Sr_1.9-xLa_xCuO_y (0≤x≤1.0) is characterized by means of X-ray diffraction and electron diffraction analyses, it is discovered that in the La-doped 2201 system with increasing La content the 2201 phase undergoes tetragnoal-orthorhombic-monoclinic structural transition. With this phase transition, the modulation vector of the 2201 phase transforms from incommensurate to commensurate, and the period of the mod- ulation wave decreases. Secondly, the superconductivity of this system is analyzed systematically. The results of the resistivity measurement show that the appropriate amount of La doping can raise the superconducting transition temperature (T_c) of the 2201 phase, with x=0.2, T_c reaches as high as 25K. However the excessive doping of La (x≥0.3) leads the 2201 phase to transit from metal to insulator and the su-perconductivity disappears. The measurement of thermoelectric power (TEP) of this system shows that with increasing La content the TEP value also increases gradu-ally. But the interesting point is that the transition from positive to negative in TEP occurs for x=0.2 sample. In addition, the electronic structure and oxygen content of this system are also studied. Based on these, we analyze the relation between the microstructure, electronic structure of the La-doped 2201 phase and its superconduc-tivity, indicating that the type of element substitution with higher valence, together with the microstructural distortion induced by the substitution affects the electronic states of Cu 3d seriously, that is, changes the degree of coulomb correlation of Cu 3d electrons, thus resulting in the transition of the type of carrier of this system and the decrease of hole carrier concentration, as well as the corresponding variation of the superconductivity of La-doped 2201 phase.     

Low temperature laser absorption spectra of methane in the near-infrared at 1.65 μm for lower state energy determination

Direct absorption spectra of the 2v₃ band of methane (CH₄) from 6038 to 6050 cm^-1 were studied at different low temperatures using a newly developed cryogenic cell in combination with a distributed feedback (DFB) diode laser. The cryogenic cell can operate at any stabilized temperature ranging from room temperature down to 100 K with temperature fluctuation less than ±1 K within 1 hour. In the present work, the CH₄ spectra in the range of 6038-6050 cm^-1 were recorded at 296, 266, 248, 223, 198, and 176 K. The lower state energy E″ and the rotational assignment of the angular momentum J were determined by a “2-low-temperature spectra method” using the spectra recorded at 198 and 176 K. The results were compared with the data from the GOSAT and the recently reported results from Campargue and co-workers using two spectra measured at room temperature and 81 K. We demonstrated that the use of a 2-low-temperature spectra method permits one to complete the E″ and J values missed in the previous studies.     

An exactly solvable model for two-dimensional non-Hermitian quasicrystals

The phenomenon Anderson localization explains the metalinsulator transition in a material with the increase of disorder and its electrons’transport change from diffusive into localized.The study of the Anderson localization has been extended to many fields of physics,including the quasiperiodic or incommensurate systems.     

POSITRON LIFETIME STUDIES OF Y1-xCaxBa2Cu3O7-δ AND Y1-xCaxBa2Cu3-xFexO7-δ

In this paper it is reported that the measurement of the bulk positron lifetime as a function of substitution content x in the temperature range from 70 to 220K was performed in two high-T_c superconducting systems, Y_1-xCa_xBa₂Cu_3-xFe_xO_7-δ and Y_1-xCa_xBa₂Cu₃O_7-δ. It was found that τ_B of both systems decreases significantly with x and the temperature dependence of τ_B is very weak in normal state. In lower temperature region (Tc), a dramatic x-dependent temperature variation of τ_B was observed in the Ca-substituted system: from a decrease of τ_B with decreasing T to an increase of τ_B. With increasing x, the temperature dependence of τ_B remains weak in the Ca- and Fe- substituted systems. Compared with the experimental data of positron lifetime in other substituted systems and the calculation of the positron density distribution, the authors suggest that positron bulk lifetime spectra behaviour can be interpreted by the physical model based on the transfer of electron density between the CuO₂ planes and Cu-O chains. Therefore, the study of positron lifetime spectra provides a useful means to detect the local charge density and to study the correlation between the electronic structure and the high-T_c superconductivity.     

过渡金属掺杂在Na0.5Bi0.5TiO3体系中诱导产生磁性的第一性原理研究

The origins of magnetism in transition-metal doped Na_0.5Bi_0.5TiO₃ system are investigated by ab initio calculations. The calculated results indicate that a transition-metal atom substitution for a Ti atom produces magnetic moments, which are due to the spin-polarization of transition-metal 3d electrons. The characteristics of exchange coupling are also calculated, which shows that in Cr-/Mn-/Fe-/Co-doped Na_0.5Bi_0.5TiO₃ system, the antiferromagnetic coupling is favorable. The results can successfully explain the experimental phenomenon that, in Mn-/Fe-doped Na_0.5Bi_0.5TiO₃ system, the ferromagnetism disappears at low temperature and the paramagnetic component becomes stronger with the increase of doping concentration of Mn/Fe/Co ions. Unexpectedly, we find the Na_0.5Bi_0.5Ti_0.67V_0.33iO₃ system with ferromagnetic coupling is favorable and produces a magnetic moment of 2.00 μB, which indicates that low temperature ferromagnetism materials could be made by introducing V atoms in Na_0.5Bi_0.5TiO₃. This may be a new way to produce low temperature multiferroic materials.     

Magnetic properties and magnetoresistance effect of Y1-xGdxMn6Sn6 (x=0－1) compounds

The magnetic properties and magnetoresistance effect of Y_1-xGd_xMn₆Sn₆ (x=0－1) compounds have been investigated by magnetization and resistivity measurements in the applied field range (0－5 T). Compounds with x=0.4－1 display ferrimagnetic behaviours in the whole magnetic ordering temperature range, while compounds with x=0－0.2 display a field-induced metamagnetic transition, and the threshold fields decrease with increasing Gd content. The compounds with x=0.1－0.2 undergo an antiferromagnetic to ferromagnetic transition with increasing temperature. The cell-parameter a and c and cell-volume V of compounds (x=0－1) increase with increasing Gd content. It was found that the saturation magnetization M_s of the compounds (x=0.4－1) decreases, while the ordering points of the compounds (x=0－1)increase with increasing Gd content. A large MR effect was observed in the compound with x=0.2, and the maximum absolute value of MR at 5 K under 3 T is close to 19.3%.     

INFLUENCE OF γ-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION

In this paper the influence of γ-radiation on the dielectric constants of Rb₂ZnCl₄ crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with γ-radiation or not. For the γ-irradiated sample, its transition point, T_c, between the INC and C phases is not changed, but the peak value of the dielectric constant at T_c increases abruptly, compared with that before γ-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from γ-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples.     

ENHANCEMENT OF FERROMAGNETIC CLUSTER INDUCED BY MAGNETIC FIELD IN THE PHASE-SEPARATED La0.5Ca0.5MnO3

Magnetic and transport properties of La_0.5Ca_0.5MnO₃ have been investigated by measuring the magnetization and resistance in zero-field-cooled (ZFC) and field-cooled (FC) modes. Conspicuously irreversible behaviors of magnetization/resistance in the two different modes were observed below the charge ordering transition temperature (T_CO). The ZFC and FC magnetizations at 5K, as functions of the magnetic field, coincide for μ₀H≤1T. Afterwards, the ZFC magnetization tends to an approximate constant, but the FC one increases linearly with increasing field. There exists an excellent correspondence between magnetization and resistance below T_CO. All the results suggest that the ferromagnetic clusters embed in the charge-ordered matrix. The phenomenon of ferromagnetic clusters growing up easily in the FC procedure has been interpreted according to the model of thermally activated two-level system.     

EFFECT OF THE Ba VACANCY ON THE FLUX PINNING IN YBaxCu3O7-δ SYSTEM

A series of Y123 single phase samples with various Ba vacancy concentration was prepared by making their Ba contents deviate from the stoichiometric composition. The measurements of their structure, superconductivity and flux pinning behaviour were systematically carried out. It is found that, compared with YBa₂Cu₃O_6.96 sample, the strength of the flux pinning in YBa_xCu₃O_7-δ(1.8≤x<2.0) samples is increased, and that there is an optimum value of Ba vacancy concentration for the maximum flux pinning force density. The possible origin of the flux pinning centers to determine the flux pinning behavior at higher field is discussed in detail. We suggest that the flux pinning effect at lower field may stein from the interaction between the vortex and the surfaces of grains, and that the flux pinning mechanism at higher field belongs to the core interaction.     

THE MULTIPLE IONIZATION OF ARGON INDUCED BY PARTIALLY STRIPPED CARBON IONS

The cross section ratios of the double, triple and quadruplicate ionization to the single ionization of argon by 1.5-7.5 MeV partially stripped carbon ions are measured by using time-of-flight technique. The Auger transition and the charge exchange process in the multiple ionization of argon are studied. The ratios of cross sections of the direct multiple ionization to those of the direct single ionization are obtained by subtracting the parts of the Auger transition and the charge exchange process from the measured data. It is found that the cross section ratios of the direct multiple ionization to those of the direct single ionization are in good agreement with the predicted mniti-step (ν/q_eff)^-2n+2 law.