Synthesis of Ni<Subscript>80</Subscript>Fe<Subscript>20</Subscript> and Co nanodot arrays by self-assembling of polystyrene nanospheres: magnetic and microstructural properties

Array of dots have been designed by assembling a monolayer of polystyrene nanospheres (PN) on sputtered thin films having Ni₈₀Fe₂₀ and Co composition with different thickness, ranging in the interval 20 ÷ 80 nm. Subsequently the films are nanopatterned using the nanospheres as a mask during sputter etching with Ar⁺ ions. A Reactive Ion Etching (RIE) process before sputter etching is used to control the final diameter of the magnetic dots that thus can be tailored as desired (typically ranging in the interval 250 ÷ 400 nm depending on the PN starting diameter). In addition, electron beam lithography has been exploited to obtain arrays of dots in Ni₈₀Fe₂₀ thin films having approximately the same mean size and dot distance as in self-assembled samples. All films have been routinely characterized by SEM and AFM microscopy to evaluate the microstructure. Magnetic domain patterns at magnetic remanence and in the demagnetised state have been imaged by MFM microscopy technique. Room-temperature hysteresis properties have been measured by an alternating gradient force magnetometer. In general, the magnetization process in all patterned films has been observed to have features typical of a vortex whose nucleation field depends on sample thickness and mean dot dimension. A comparison between magnetic arrays of Ni₈₀Fe₂₀ dots prepared by self-assembling of polystyrene nanospheres and electron beam lithography is presented to rule out the role of microstructure (i.e., order, size, and mutual distance of the magnetic dots) on magnetic properties.     

Optical properties and mechanical characteristics of transparent nanostructured Zn1−xMnxO thin films

Uniform and transparent thin films of Zn_1−xMn_xO (0?x?0.10) were fabricated by a sol-gel spin coating method. XRD results indicated the hexagonal structure of ZnO as the primary phase at all concentrations (x) of Mn. However, at x?0.035, Mn₃O₄ (tetragonal) is observed as the secondary phase, which was confirmed by selected-area electron diffraction patterns. SEM and TEM results showed a tendency of grains to arrange into wire-shaped morphologies, leading to elongated needle-like structures at high Mn addition. Increasing Mn content in the range 0?x?0.10 led to quenching of photoluminescence, increase in the band gap (E_g) from 3.27 to 3.33 eV, and increase in film thickness, refractive index and extinction coefficient of Zn_1−xMn_xO thin films. The residual stress evaluated was compressive in all cases and found to increase by an order of magnitude with addition of Mn. Furthermore, an overall increase in microhardness and yield strength of Zn_1−xMn_xO thin films at higher Mn concentrations is attributed to change in microstructures, presence of secondary phase and increase in film thickness.     

Fabrication and characterization of electrodeposited Co1−xCrx nanowires

Co_1−xCr_x   alloy nanowires with 0.01<x<0.93$0.01<x<0.93$ were fabricated by electrodeposition in a porous alumina membrane from an electrolyte containing Co and Cr ions. The composition, structure and magnetic properties of the nanowires have been characterized. Cobalt-rich nanowires were electrodeposited at a potential of −1.0 V relative to Ag/AgCl and chromium-rich nanowires were deposited beyond −3.5 V. The optimized processing conditions include hydrogen annealing to give hysteresis loops for the Co₈₀Cr₂₀ nanowires with coercivity of up to 200 mT and squareness of up to 0.95. Magnetization of the Co₈₀Cr₂₀ nanowire is 77 A m² kg⁻¹ and the energy product of the arrays is 35 kJ m⁻³.     

Structural and magnetoresistive properties of half metallic Co2Mn1−xSi thin films

Polycrystalline Co₂Mn_1−xSi (CMS) thin films with Mn-deficiency can grow on different types of substrates such as MgO (1 0 0) single crystal, α-sapphire (0 0 0 1) and Si coated with SiO₂ either by using V or Ta/Cu as the seed layer. The magnetic property, especially the coercivity of the CMS thin films strongly depends on the crystalline structure and microstructure of the CMS thin film, hence it is affected by the substrate and also the seed layer. Very soft CMS thin film with coercivity of about 20 Oe has been obtained when MgO (1 0 0) is used as the substrate. Magnetic tunnel junctions (with MR ratio of about 9%–18%) by utilizing the CMS as one of ferromagnetic electrodes have been successfully fabricated. The degradation of the magnetoresistive effect of the MTJ after magnetic annealing is attributed to the diffusion of the Mn-atoms into the tunnel barrier during the annealing process.     

Ferromagnetic resonance studies on (Co40Fe40B20)x(SiO2)1−x granular magnetic films

Magnetic properties of granular (Co₄₀Fe₄₀B₂₀)_x(SiO₂)_1−x   thin films (x=0.37-0.53$x=0.37-0.53$) have been studied by ferromagnetic resonance (FMR) technique. Samples have been prepared by ion-beam deposition of Co–Fe–B particles and SiO₂ on sitall ceramic substrate. The FMR measurements have been done for different orientations of DC magnetic field with respect to the sample plane. It was found that the deduced value of effective magnetization from FMR data of the thin granular film is reduced by the volume-filling factor of the bulk saturation magnetization. The overall magnetization changes from 152 to 515 G depending on the ratio of the magnetic nanoparticles in the SiO₂ matrix. From angular measurements an induced in-plane uniaxial anisotropy has been obtained due to the preparation of the film conditions as well.     

Magnetic behavior of MnAs precipitates in Ga1−xMnxAs diluted magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x≈4.7–5.5%) were grown on (1 0 0) GaAs substrates by molecular beam epitaxy. These p-type (Ga,Mn)As films were revealed to have a ferromagnetic structure and ferromagnetism is observed up to a Curie temperature of 318 K, which is ascribed to the presence of MnAs secondary magnetic phases within the film. It is highly likely that the phase segregation occurs due to the high Mn cell temperature around 890–920 °C, as it is well established that GaMnAs is unstable at such a high temperature. The MnAs precipitate in the samples with x≈4.7–5.5% has a Curie temperature T_c≈318 K, which was characterized from field-cooled and zero-field-cooled magnetization curves.     

Effect of indium incorporation in Zn1−xCoxO thin films

In the present paper, the preliminary investigations of a series of ZnO thin films co-doped with indium and cobalt with an objective to elucidate the correlation, if any, between the carrier concentration and the induced room temperature ferromagnetism (RTFM), are presented. The single-phasic (Zn_99.5In_0.5)_1−xCo_xO thin films are deposited by spray pyrolysis. The substitution of Zn²⁺ by Co²⁺ has been established by optical transmission analysis of these films. The films are ferromagnetic at room temperature; and the magnetization has higher value for indium and cobalt co-doped thin film as compared with Zn0₉₀Co_0.1O thin film (having no indium).     

Magnetic viscosity-coercivity relation for Fe1−xCox fine particles

The variation of the applied field results in a subsequent change of magnetization with time. There is a relationship between the coercivity (H_c), as the equilibrium characteristic of the system, and its magnetic stability (1/S), as a parameter characterizing the time dependence. 1/S as a function of H_c has been measured and studied for different Fe_1−xCo_x samples. We synthesized several samples with different values of x by applying various magnetic fields during the grains’ growth, and observed a linear relationship between 1/S and H_c.     

Ferromagnetic semiconductor Ge1−x−ySnxMnyTe with phase transformation of ferroelectric type

It is expected that joint existence of ferromagnetic properties and ferroelectric structural phase transition in diluted magnetic semiconductors IV-VI leads to new possibilities of these materials. Temperature of ferroelectric transition for such crystals can be tuned by the change of Sn/Ge ratio. Magnetic susceptibility, Hall effect, resistivity and thermoelectric power of Ge_1−x−ySn_xMn_yTe single crystals grown by Bridgeman method (x=0.083-0.115; y=0.025-0.124) were investigated within 4.2-300 K. An existence of FM ordering at T_C∼50 K probably due to indirect exchange interaction between Mn ions via degenerated hole gas was revealed. A divergence of magnetic moment temperature dependences at T?T_C in field-cooled and zero-field-cooled regimes is obliged to magnetic clusters which are responsible for superparamagnetism at T>T_C≈T_f (freezing temperature) and become ferromagnetic at T_C arranging spin glass state at T<T_f≈T_C. Phase transition of ferroelectric type at T≈46 K was revealed. Anomalous Hall effect which allows to determine magnetic moment was observed.     

Transmission electron microscopy of Co2(Cr1−xFex)Al sputtered films and their magnetic tunneling junctions

The microstructures of Co₂FeAl and Co₂(Cr_0.4Fe_0.6)Al sputtered films and of their magnetic tunnel junctions (MTJs) have been investigated to discuss the possible reasons for an unexpectedly low tunneling magnetoresistance (TMR). The structure of the Co₂FeAl film changed from B2 to L2₁ with increasing substrate temperature, while that of the Co₂(Cr_0.4Fe_0.6)Al film remained B2 up to 500 °C. The thermodynamically predicted phase separation was not observed in the films. The low TMR values obtained from the MTJs using the Co₂FeAl and Co₂(Cr_0.4Fe_0.6)Al films are attributed to the low-spin polarization expected from the low degree of order in these films. The TMR values depend sensitively on the interfacial structure of the tunnel junctions when the degree of order of the film is low.     

Magnetic properties of RNi5−xCux intermetallics

The magnetic properties have been studied for the series of RNi_5−xCu_x intermetallics with R=Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Lu; x  ?2.5. Compositional dependences of magnetic susceptibility for the Pauli paramagnets (R=Y, La, Ce, Lu) and the Curie temperature for ferromagnets (R=Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm) have maximum at x=0.2–0.4$x=0.2–0.4$ and 1, respectively. The substitution of Cu for Ni is accompanied by decreasing spontaneous magnetic moment and increasing coercive force of all ferromagnetic RNi_5−xCu_x but GdNi_5−xCu_x. These results are explained in the frame of band magnetism, random local crystal field, and domain wall pinning theories.     

Magnetic phase diagram of diluted spinel Zn1−xCuxCr2Se4 system

By using mean field theory, we have evaluated the nearest-neighbour and the next-neighbour super-exchange J₁(x) and J₂(x), respectively, for Zn_1−xCu_xCr₂Se₄ in the range 0?x?1. The intraplanar and the interplanar interactions are deduced. High-temperature series expansions are derived for the magnetic susceptibility and two-spin correlation functions for a Heisenberg ferromagnetic model on the B-spinel lattice. The calculations are developed in the framework of the random phase approximation. The magnetic phase diagram is deduced. A spin glass phase is predicted for intermediate range of concentration. The results are comparable with those obtained by magnetic measurements. The critical exponents associated with the magnetic susceptibility (γ) and the correlation lengths (ν) have been deduced. The values are comparable to those of the 3D Heisenberg model, and are insensitive to the dilution x.     

Magnetic domain structure in Fe78.8−xCoxCu0.6Nb2.6Si9B9 nanocrystalline alloys studied by Lorentz microscopy

The magnetic domain structures of Fe_78.8−xCo_xCu_0.6Nb_2.6Si₉B₉ (x=0, 20, 40, 60) alloys are investigated by Lorentz microscopy coupled with the focused ion beam method. The specimen prepared using the FIB method is found to have a considerably more uniform thickness compared to that prepared using the ion-milling method. In Fe_38.8Co₄₀Cu_0.6Nb_2.6Si₉B₉ and Fe_18.8Co₆₀Cu_0.6Nb_2.6Si₉B₉ alloys, 180° domain walls extending in the direction of the induced magnetic anisotropy are observed. Analysis with Lorentz microscopy reveals that the width of the magnetic domains decreases with an increase in the cobalt content or the induced magnetic anisotropy K_u, that is, the domain width d is proportional to the induced magnetic anisotropy (K_u)^−1/4. On the other hand, in the in situ Lorentz microscopy observation as a function of temperature, magnetic ripple structures are found to appear in a localized area due to the fluctuation of magnetization vectors from 423 K. It is observed that the induced magnetic anisotropy caused by the applied magnetic field at 803 K is not suppressed by the magnetic ripple structures observed at 423–443 K.     

Magnetic and transport properties in Sr1−xLaxFe1−xMnxO3

The magnetic and transport properties in the perovskite Sr_1−xLa_xFe_1−xMn_xO₃ have been explored. As x rises, the systemic ferromagnetism increases gradually and cluster-spin-glass state occurs in the low-temperature region. For 0.3?x?0.7, the ferromagnetic phase separation from the paramagnetic phase was observed from the results of electron-spin-resonance measurement. Although all samples show a semiconducting behavior, their transport properties are dominated by two different mechanisms, namely, the electronic transport of x?0.5 samples is realized by thermal activation but the variable-range hopping is applied in x?0.7 ones. The different transport mechanism can be understood from the Mn/Fe ions interaction.     

Ferromagnetism of epitaxially grown CaRu1−xMxO3 (M=Ti, Mn) films

Epitaxial thin films of CaRu_1−xM_xO₃ (M=Ti, Mn) were fabricated on a (0 0 1)-SrTiO₃ substrate by spin-coat method using organometallic solutions (metal alkoxides). Results of X-ray diffraction and transmission electron microscopy indicate that the epitaxial films were grown pseudomorphically so as to align the [0 0 l] axis of the CaRu_1−xM_xO₃ films perpendicular to the (0 0 1) plane of the SrTiO₃ substrate. Ferromagnetism and metal-insulator transition are induced by the substitution of transition metal ions. The occurrence of ferromagnetism was explained qualitatively assuming a TiRu₆ cluster model for CaRu_1−xTi_xO₃ film and a mixed valence model for CaRu_1−xMn_xO₃ film. Ferromagnetism was also observed for layered CaRuO₃/CaMnO₃ film and CaRuO₃/CaMnO₃/CaRuO₃/CaMnO₃ multilayer film and the magnetism was explained by an interfacial exchange interaction model with magnetic Mn³⁺, Mn⁴⁺, and Ru⁵⁺ ions.     

The effect of annealing process on the physical properties of La1−xNaxMnOy

The effect of Na doping and annealing time on the structure, electrical properties, magnetoresistance and thermopower properties has been investigated in perovskite La_1−xNa_xMnO_y (x=0.025, 0.075 and 0.1) systems. La_1−xNa_xMnO_y crystallizes in a single-phase rhombohedral structure. It is observed a simultaneous occurrence of the ferromagnetic to paramagnetic state and metallic to insulating state. In the meanwhile, a large negative magnetoresistance with low applied magnetic field is observed. In addition, ρ(T) curves for Na-doped samples exhibit another broad transition T_ms2 below T_ms. Such double peak behavior in the ρ(T) curve interpreted by the electronic inhomogeneity in the samples. The sign of S changes from positive to negative depending on composition. The values of Seebeck coefficient are small (in the microvolt range).     

Oxygen vacancy doping effect on the electrical and magnetic behavior of Ba5−xLaxNb4−xTixO15

We report electric and magnetic properties of oxygen deficient Ba_5−xLa_xNb_4−xTi_xO_15−δ phases, which have been prepared by solid-state reaction method followed by a controlled reduction process under hydrogen atmosphere. The extra electrons added by the formation of the oxygen vacancies (δ) introduce localized spins and the magnetic susceptibility can be described by a temperature-independent contribution and a Curie-Weiss term associated to the Ti³⁺ ion formation. Besides, the experimental resistivity (ρ) data of these four reduced compounds are well described in a wide temperature range with the equation , which suggests the presence of small polarons in the system. Although, all samples present electrical insulating behavior, the electrical resistivity decreases four orders of magnitude for intermediate x values. We interpreted this fact as a consequence of the mix between the localized bands of the Nb and Ti ions, which favors the promotion of carriers due to reduction of the band gap.     

Magnetic properties of electron-doped Y1−xCexMnO3 compounds

Cerium-doped Y_1−xCe_xMnO₃ compounds have been prepared in single-phase form for x=0 to 0.10. X-ray diffraction (XRD) patterns could be analyzed by using P6₃cm space group. Temperature variations of ac susceptibility and magnetization measurements show that these Ce-doped materials exhibit weak ferromagnetic transition. The observed ferromagnetic transition is attributed to the double exchange ferromagnetic interaction between Mn²⁺ and Mn³⁺ ions due to electron doping. The M–H loops exhibit hysteresis along with linear contribution and were analyzed based on bound magnetic polaron (BMP) model. Increase in saturation magnetization and decrease in BMP concentrations have been observed with increase in Ce doping.     

Study of magnetic properties of Mn1−xCuxCr2S4 by: High-temperature series expansions

The high-temperature series expansions method applied in the systems Mn_1−xCu_xCr₂S₄ in the range 0?x?1. The exchange interactions and the magnetic exchange energies are calculated by using the probability law. The high-temperature series expansions have been applied in the spinel Mn_1−xCu_xCr₂S₄ systems, combined with the Padé approximants method, to determine the magnetic phase diagram, i.e. T_C versus dilution x. The critical exponent associated with the magnetic susceptibility (γ) is deduced. The obtained value of γ is insensitive to the dilution ratio x and may be compared with other theoretical results based on 3D Heisenberg model.     

Structural and optical properties of chemically synthesized monodispersed CdCr2S4 films

Alkaline chemical synthesis of amorphous CdCr₂S₄ (CCS) thin films of different thicknesses using cadmium chloride, chromic acid, disodium salt of ethylenediaminetetra acetic acid and thiourea precursors is reported, and the structural and surface morphological properties of CCS using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) techniques are discussed. Films of aggregated grains with some void spaces are obtained. Change in band gap energy and electrical resistivity of CCS films are discussed as a function of film thickness. n-type conductivity is confirmed from the sign of thermally generated voltage across the cold and hot junctions.