Magnetic properties of amorphous Ge–Fe thin films

Thin films of Ge_100−xFe_x (x in at%) alloys, fabricated by thermal co-evaporation, have an amorphous structure at compositions x<∼40, although an unidentified crystalline phase with an FCC symmetry also exists at low Fe content. Magnetization versus temperature curves show that saturation magnetization is non-zero (1 to 2.5 emu/cm³) and remains nearly unchanged up to the highest measured temperature of 350 K. Magnetic hysteresis loops at room temperature show a typical ferromagnetic shape, complete saturation occurring by 1–2 kOe. These results may indicate ferromagnetic ordering at room temperature. No definite tendency is observed in the compositional dependence of saturation magnetization.     

Effect of Co layer thickness on the magnetic properties of Tb30Co70/SiNx/Co thin films

The SiN_x (20 nm)/Tb₃₀Co₇₀ (90 nm)/SiN_x (5 nm)/Co (3–37 nm)/SiN_x (10 nm)/Si multilayer films are deposited on naturally oxidized Si wafer by magnetron sputtering. The saturation magnetization (M_s) of the multilayer films is increased with the thickness of high M_s ferromagnetic Co layer. The perpendicular coercivity (_Hc⊥$H_{{\mathrm{c}}^{\perp }}$) value is increased with Co layer thickness as the thickness of the Co layer is lower than 15 nm and then decreases drastically when the thickness of the Co layer further increased. The increase of the _Hc⊥$H_{{\mathrm{c}}^{\perp }}$ value is owing to the interlayer exchange effect [Li Zhang, Physica B 390 (2007) 373] between TbCo and Co layers. Co under-layer with in-plane magnetic anisotropy would pin the magnetic moment of the TbCo layer near by the Co layer and cause the value of _Hc⊥$H_{{\mathrm{c}}^{\perp }}$ to increase. However, as the Co layer is thicker than a critical thickness, the _Hc⊥$H_{{\mathrm{c}}^{\perp }}$ value of the multilayer film would decrease. Therefore, the Co layer with in-plane magnetic anisotropy and soft magnetic properties is expected to dominate the magnetic properties of the multilayer films.     

Interface morphologies and magnetization characteristics of Co70Fe30 thin films deposited on conjugated polymer thin films

The surface and interface morphology and magnetization characteristics of Co₇₀Fe₃₀ thin films deposited on bare glass and p-Si/SiO₂ substrates and on conjugated polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) thin films on such substrates have been studied by atomic force microscopy and magneto-optic Kerr effect. It was found that the average absolute magnitude of the coercive field of Co₇₀Fe₃₀ correlates with the roughness of the underlayer prior to Co₇₀Fe₃₀ deposition. P3HT deposited on p-Si/SiO₂ substrates possesses an increased surface roughness as compared to the p-Si/SiO₂ surface, but displays a decreased surface roughness as compared to the one of a bare glass substrate.     

Exchange interaction effect of TbCo/FePt bilayers

Interlayer exchange coupling in dc-magnetron sputtered Tb_29.6Co_70.4/FePt bilayers with different annealing temperatures of the FePt film have been investigated. The dependence of ordering degree on perpendicular magnetic properties of the FePt film was studied. The Tb_29.6Co_70.4/FePt film has high perpendicular coercivity and high saturated magnetization about 7.5 kOe, and 302 emu/cm³, respectively as the substrate temperature is 500 °C and annealing at 500 °C for 30 min. It also shows a strong exchange coupling between this FePt layer and Tb_29.6Co_70.4 layer. We also examined the interface wall energy in the exchange coupled Tb_29.6Co_70.4/FePt double layers.     

Magnetic properties of CoPt–SiNx/Ag nanocomposite films

When the thickness of Ag under layer is 25 nm, the CoPt/Ag film has maximum out-of-plane squareness (S_⊥), minimum in-plane squareness (S_∥), and the largest out-of-plane coercivity (H_c⊥), they are 0.95, 0.35, and 15 kOe, respectively. Different volume percent of SiN_x ceramic materials were co-sputtered with Co₅₀Pt₅₀ films on the Ag under layer to reduce the grain size of the CoPt film. Comparing the X-ray diffraction pattern of CoPt-SiN_x/Ag films without annealing with that of the films which annealed at 600 and 700 °C, it is found that the intensities of CoPt (0 0 1) and CoPt (0 0 2) superlattice lines were reduced after annealing. As the SiN_x content is raised to 50 vol%, the particle size of CoPt is reduced to be about 9 nm.     

Magnetic field dependence of asymmetry in the magnetization reversal of ultrathin Co films and Co/Pt multilayers with perpendicular anisotropy

We studied the magnetization reversal in ultrathin [Co/Pt]_n films (n=1, 2, and 4) using magneto-optical Kerr microscopy. These materials demonstrate unusual asymmetries in the activity of nucleation centers and domain wall motion. It was found that application of very high holding magnetic field prior to magnetization reversal, exceeding some critical value much larger than the apparent saturation field, suppresses the subsequent ‘asymmetric’ nucleation centers, activity. We revealed that the ‘asymmetric’ nucleation centers become active again after subsequent reversal cycles coming from a smaller holding field and studied how the asymmetry returns with the decrease of applied holding field. It was found that in low-coercivity ultrathin Co films, the asymmetry in domain wall velocity decreased sharply with the applied field increase and disappeared when the reversal field is greater than μ₀H=1.5 mT.     

Structural and magnetic properties of Co-C composite films and Co/C multilayer films

CoC composite films and Co/C multilayer films have been prepared by a method incorporating ion beam sputtering and plasma chemical vapor deposition. It has been found that the structure and magnetic properties of both the Co-C composite and the Co/C multilayer films depend strongly on the substrate temperature during deposition. The Co-C composite film deposited at room temperature is amorphous, with relatively low saturation magnetization and coercivity. On the other hand, the film deposited at 250 °C is composed of fine Co crystallites separated by amorphous C or Co-C phase. As a result, both the saturation magnetization and coercivity are increased compared with the film deposited at room temperature. When deposited at room temperature, the Co/C multilayer film exhibits good periodicity, with a period of 70 nm (Co: 40 nm, C: 30 nm) and sharp and flat Co-C interfaces. High magnetization (602 emu/cm³) and low coercivity (1.6 Oe) are obtained for such a film. However, increasing the substrate temperature to 250 °C was found to be detrimental to the magnetic properties due to the formation of cobalt carbide at the Co-C interface. Received: 11 July 2000 / Accepted: 13 July 2000 / Published online: 30 November 2000     

Thickness dependence of the magnetic properties and magnetoimpedance effect in CoFeAlO thin films

The change of the magnetic properties and magnetoimpedance effect of Co–Fe–Al–O thin films with film thicknesses 50–1200 nm has been investigated. The coercivity and the anisotropy field changed strongly with increase of film thickness, while the saturation induction almost remained unchanged. The maximum value of GMI effect obtained about 33% for a film thickness of 1200 nm.     

Ferromagnetism of epitaxially grown CaRu1−xMxO3 (M=Ti, Mn) films

Epitaxial thin films of CaRu_1−xM_xO₃ (M=Ti, Mn) were fabricated on a (0 0 1)-SrTiO₃ substrate by spin-coat method using organometallic solutions (metal alkoxides). Results of X-ray diffraction and transmission electron microscopy indicate that the epitaxial films were grown pseudomorphically so as to align the [0 0 l] axis of the CaRu_1−xM_xO₃ films perpendicular to the (0 0 1) plane of the SrTiO₃ substrate. Ferromagnetism and metal-insulator transition are induced by the substitution of transition metal ions. The occurrence of ferromagnetism was explained qualitatively assuming a TiRu₆ cluster model for CaRu_1−xTi_xO₃ film and a mixed valence model for CaRu_1−xMn_xO₃ film. Ferromagnetism was also observed for layered CaRuO₃/CaMnO₃ film and CaRuO₃/CaMnO₃/CaRuO₃/CaMnO₃ multilayer film and the magnetism was explained by an interfacial exchange interaction model with magnetic Mn³⁺, Mn⁴⁺, and Ru⁵⁺ ions.     

Influence of heat treatment on the structure and magnetic properties of the Co/Zr and Co/Hf multilayer amorphous films

The influence of annealing on the structure and magnetic properties of amorphous Co/Zr and Co/Hf multilayer films was studied with particular attention to the dependence of the magnetic properties, thermal stability and crystallization process on layer composition and thickness. The temperature at which crystallization commences increases from 400 to 460 °C as the layer thickness d_Zr or d_Hf increases from 6 to 18 Å, and decreases from 450 to 400 °C as d_Co increases from 12 to 18 Å. Multilayers containing 19–60 at% Zr were studied. The specific magnetization was found to increase even below the temperature at which crystallization commences. Our data are compared with non-multilayer Co–Zr amorphous films and rapidly quenched metallic glasses.     

Annealing effects on the microstructure of amorphous carbon nitride films

Amorphous carbon nitride films, prepared using a dc facing-target reactive sputtering system, were annealed at temperatures up to 650 °C for 1 h in vacuum. The effects of heat treatment on the films, i.e. changes in the composition and structure, were investigated. It was found that annealing at temperatures ranging from 300 to 650 °C, results in the N content decreasing from ∼33 at.% in the as-deposited films to ∼5 at.%. The loss of N, especially those bonded to sp³C, causes the rearrangement of the film's microstructure, and the dual effects of the thermal annealing are quite noticeable: (1) annealing destroys most graphite-like structures, and more non-aromatic sp²C components and C≡N terminal structures are formed at higher annealing temperatures, contributing to a looser film's structure. (2) Annealing makes the remaining aromatic sp²C structure become more order. The results also reveal that N atoms bonded to sp³C are easily removed with the increasing temperature compared to those bonded to sp²C, which indicates that Nsp²C bonds had a higher thermal stability than Nsp³C.     

XPS and AES investigations of hard magnetic Nd-Fe-B films

Nd-Fe-B is a promising material system for the preparation of thin films with good hard magnetic properties. One problem of this material class is the sensitivity against oxidation, resulting in a degradation of the magnetic properties. Using XPS depth profiling in combination with peak-shape analysis it is shown that already after several hours oxygen can diffuse deep into the thin laser-deposited films and that Nd is mainly responsible for the oxidation. Local element analysis with AES revealed boron inhomogeneities from droplet formation during laser deposition. These problems can be solved by using a capping Cr layer and an FeB target for thin film preparation, respectively.     

Half Ca-doped LaMnO3 films on (0 0 1) SLAO and STO substrate studied by magnetization and transport measurements

In this study, La_0.5Ca_0.5MnO₃ (LCMO) films, at the boundary between ferromagnetic metallic and charge-ordered antiferromagnetic insulator according to the bulk phase diagram, were epitaxially grown on (0 0 1) SrTiO₃ (STO) and SrLaAlO₄ (SLAO) substrates by pulsed laser deposition technique. The films were analyzed by X-ray diffraction, magnetization and magnetoresistance measurements. A considerably higher magnetization was measured for 290-nm-thick film on SLAO substrate compared to the film on STO substrate, although both films have the same chemical composition, thickness and epitaxial orientation. The film on SLAO shows a metal-insulator (MI) transition, which occurs at higher temperatures with increasing applied magnetic field, whereas only insulating behavior was observed for the 290-nm-thick film on STO except for the highest applied magnetic field (7 T). In addition, transport measurements were performed and analyzed by Mott's variable range hopping (VRH) model to correlate the resistivity of the films with the Jahn-Teller strain (ε_J−T) in the structure.     

High-frequency properties of thin amorphous ribbons

Magnetic energy losses have been investigated in Co-based near-zero-magnetostriction amorphous ribbons from DC to 10 MHz. Attention has been devoted to the properties of field-annealed ribbons thinned down to 5.8 μm and their behavior at high frequencies. A rationale is provided for the frequency dependence of the magnetic losses over the investigated many-decade range through analysis of the loss components. Ribbons annealed under transverse field benefit by limited irreversible domain wall activity and correspondingly reduced hysteresis and excess losses. Based on the near-linear response of the material and the permeability–energy loss relationship, the separate contributions of domain wall displacements and rotations to the magnetization process and the related dissipation effects are singled out at all frequencies. Very thin amorphous ribbons are shown to display lower loss and higher permeability (i.e. higher Snoek's product) than Mn–Zn ferrites at all frequencies.     

Advanced granular-type perpendicular recording media

We introduce our recent experimental results for three blocked layers for currently used perpendicular recording media; a recording layer (RL: for recording), a soft magnetic underlayer (SUL: magnetic flux path in writing), and a nonmagnetic intermediate layer (NMIL: underlayer of RL and separation layer between RL and SUL). For the NMIL, uniaxial crystallographic symmetry is an essential requirement for suppression of variant growth of magnetic grains in granular-type RL. From this view point, AlN with wurtzite structure and materials with pseudo-hcp structure, which means fcc structure with stacking faults, were found to be effective. For the SUL, disordered hcp CoIr with negative K_u were found to well suppress both spike noise and track erasure due to a wide distribution of magnetic flux under the return yoke in writing and formation of a Neel wall instead of a Bloch wall in the SUL. For the RL, positive-/negative-K_u stacked media with incoherent switching mode was found to be effective in order to solve the recent write-ability problem for high K_u RL material with high thermal stability. Applying all these items, an advanced medium concept with the stacking structure of “CoPtCr-oxide/CoIr-oxide/CoIr/pseudo-hcp nonmagnetic layer/substrate” is very promising from the view point of (1) switching field reduction of a RL with high K_u material, (2) conventional amorphous SUL free, and (3) conventional NMIL free.     

High-frequency characteristics of CoFeVAlONb thin films

High-frequency characteristics of CoFeVAlONb thin films were studied. A thin film of Co_43.47Fe_35.30V_1.54Al_5.55O_9.93Nb_4.21 is observed to exhibit excellent magnetic properties; magnetic coercivity of 1.24 Oe, uniaxial in-plane anisotropy field of 66.99 Oe, and saturation magnetization of 19.8 kG. The effective permeability of the film is as high as 1089 and is stable up to 1.8 GHz, and with ferromagnetic resonance over 3 GHz. This film also has very high electrical resistivity of about 628 μΩ cm. These superior properties make it ideal for high-frequency magnetic applications.     

Doping strategies for increased performance in BiFeO3

Investigation of crystal structure, dielectric, magnetic and local ferroelectric properties of the diamagnetically substituted Bi_1−xA_xFeO_3−x/2 (A=Ca, Sr, Pb, Ba; x=0.2, 0.3) polycrystalline samples has been carried out. It has been shown that the heterovalent A²⁺ substitution result in the formation of oxygen vacancies in the host lattice. The solid solutions have been found to possess a rhombohedrally distorted perovskite structure described by the space group R3c. Piezoresponse force microscopy has revealed signs of existence of the ferroelectric polarization in the samples at room temperature. Magnetization measurements have shown that the magnetic state of these compounds is determined by the ionic radius of the substituting elements. A-site substitution with the biggest ionic radius ions has been found to suppress the spiral spin structure of BiFeO₃ giving rise to the appearance of room-temperature weak ferromagnetism.     

The growth of soft magnetic FeNiN thin films under different experimental procedures

FeNiN thin films with good soft magnetic properties were synthesized on Si (1 0 0) substrates at 473 K by RF magnetron sputtering. The dependence of phase structure and magnetic properties on nitrogen partial pressure, nickel concentrations, film thickness and substrate temperature were systematically investigated. The phase evolution from α-(Fe,Ni)N to ξ-(Fe,Ni)₂N with increase of nitrogen partial pressure was seen. The addition of Ni caused FeNiN films to turn from BCC structure to FCC structure. Clear reproducible striped domains appeared at the film surfaces when X_Ni=19.6%, which is explained by the high enough perpendicular anisotropy and the small stress in the film. All films show smooth surfaces and good soft magnetic properties compared to corresponding FeN compounds. The magnetic properties depended dramatically on the phase structure. Optimum soft magnetic properties with H_C of <1 Oe are obtained between 5.0%?X_Ni?10.0%.     

Growth and characterization of ferromagnetic MnAs films on different semiconductor substrates

MnAs thin films were grown by metalorganic vapour-phase epitaxy (MOVPE) on GaAs(0 0 1), Si(0 0 1) and oxidised silicon substrates. All films are crystalline and contain only the ferromagnetic α-MnAs phase. X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements show that films on GaAs(0 0 1) have strong preferential orientation, developing elongated grains parallel to [1 –1 0] GaAs while films on bare and oxidised Si are polycrystalline with irregular-shaped, randomly oriented grains. Magneto-optic Kerr effect (MOKE) measurements show good magnetic properties for films on GaAs, such as strong in-plane anisotropy and squareness of the hysteresis loop in the easy direction. A Curie temperature of 340 K, remarkably higher than the bulk material (315 K), was found for a 65 nm thick film on GaAs. Films grown on bare and oxidised silicon wafers had lower Curie temperature and were magnetically isotropic.     

Structure and RT ferromagnetism of Fe-doped AlN films

Al_1−xFe_xN_1−δ thin films with 0 ≤ x ≤ 13.6% were deposited by dc magnetron co-sputtering at room temperature (RT). It is found that Fe atom will substitutes the Al atom in the lattice when x ≤ 1.2%, while it will embed into the interstice of the lattice at larger Fe content. RT ferromagnetism was observed in all doped samples. A maximum saturated magnetization 2.81 emu/cm³ of the film is found to be induced by AlFeN ternary alloy when x = 1.2%.