Influence of temperature on critical fields in ZnCr2Se4

The complex ac dynamic magnetic susceptibility was used to study the influence of temperature on critical fields in polycrystalline ZnCr₂Se₄ spinel. An antiferromagnetic order with a Néel temperature T_N=20.7 K and a strong ferromagnetic exchange evidenced by a positive Curie-Weiss temperature θ_CW=55.1 K were established. An increasing static magnetic field shifts T_N to lower temperatures while a susceptibility peak at T_m in the paramagnetic region—to higher temperatures. The non-zero and negative values both of the second and third harmonics of susceptibility suggest only a parallel spin coupling in ferromagnetic clusters in the range between the Néel and Curie-Weiss temperatures. Below T_N the magnetic field dependence of susceptibility, χ_ac(H), shows two peaks at critical fields H_c1 and H_c2. The values of H_c1 decrease slightly with temperature while the values of H_c2 drop rapidly with temperature. The strong changes of H_c2 temperature induced are mainly responsible for a spin frustration of the re-entrant type in the spinel under study.     

On the room-temperature ferromagnetism in (ZnO)0.98(MnO2)0.02

Room-temperature ferromagnetism (RTFM) is investigated in the polycrystalline bulk (ZnO)_0.98(MnO₂)_0.02 samples prepared by a modified solid-state sintering route. Successive sintering of a sample was carried out in air at different temperatures in the range of 400-1000 °C. The study of magnetization and phase-investigation in the sample was carried out after each sintering step. The progressive suppression of impurities and the consequent reduction in RTFM is clearly observed in the samples with increase in the sintering temperature up to 800 °C. The subsequent successive sintering of the (ZnO)_0.98(MnO₂)_0.02 sample up to 1000 °C yields fully paramagnetic sample exhibiting wurtzite structure. The studies support the conjecture (Kundaliya et al., Nat. Mater. 3 (2004) 709 [18]) that RTFM in this system has an origin related to a randomly distributed impurity phase produced by local dissolution of ZnO and MnO₂.     

Ferromagnetic semiconductor Ge1−x−ySnxMnyTe with phase transformation of ferroelectric type

It is expected that joint existence of ferromagnetic properties and ferroelectric structural phase transition in diluted magnetic semiconductors IV-VI leads to new possibilities of these materials. Temperature of ferroelectric transition for such crystals can be tuned by the change of Sn/Ge ratio. Magnetic susceptibility, Hall effect, resistivity and thermoelectric power of Ge_1−x−ySn_xMn_yTe single crystals grown by Bridgeman method (x=0.083-0.115; y=0.025-0.124) were investigated within 4.2-300 K. An existence of FM ordering at T_C∼50 K probably due to indirect exchange interaction between Mn ions via degenerated hole gas was revealed. A divergence of magnetic moment temperature dependences at T?T_C in field-cooled and zero-field-cooled regimes is obliged to magnetic clusters which are responsible for superparamagnetism at T>T_C≈T_f (freezing temperature) and become ferromagnetic at T_C arranging spin glass state at T<T_f≈T_C. Phase transition of ferroelectric type at T≈46 K was revealed. Anomalous Hall effect which allows to determine magnetic moment was observed.     

Ab initio calculation and analysis of the properties of digital magnetic heterostructures and diluted magnetic semiconductors of IV and III-V groups

We present the first-principles calculations of digital magnetic heterostructures Si/M, Ge/M. GaAs/M, GaSb/M, GaN/M and GaN/M (50%) with M=Cr, Mn, Fe, and Co. The interaction between magnetic dopants results in a wide spin-polarized two-dimensional band inside the gap. It is found that beginning occupation of the minority-spin band greatly increases the energy of the ferromagnetic (FM) state and leads, as a rule, to the antiferromagnetic (AFM) spin ordering. This mechanism causes transition to the AFM state, when interaction between magnetic atoms is too strong, and defines the optimum of Curie temperature as a function of transition element concentration in magnetic layers.     

Properties of exchange interaction in Yb3Fe5O12 under extreme conditions

In Yb₃Fe₅O₁₂, the exchange effective field can be expressed as H_eff=−λ·M_Fe=−λχ_eff·H_e=−γ·H_e where γ is named as the exchange field parameter and H_e is the external magnetic field. Then, in this paper, by the discussions on the characteristics of the exchange field parameter γ, the properties of exchange interaction in ytterbium iron garnet (Yb₃Fe₅O₁₂) are analyzed under extreme conditions (high magnetic fields and low temperatures). Our theory suggests that the exchange field parameter γ is the function of the temperatures under different external magnetic fields, and γ=a+b·T+c·T², where the coefficients a, b, c are associated with the external magnetic fields and the magnetized directions. Thus, the temperature-dependence, field-dependence and anisotropic characteristics of the exchange interaction in Yb₃Fe₅O₁₂ are revealed. Also, excellent fits to the available experiments are obtained.     

Measurement of the coupling strength distribution in ferromagnetic (F)/antiferromagnetic (AF) exchange bias systems

We propose a method for determination of the distribution function P(j) of the coupling energy density j in polycrystalline textured ferromagnetic (F)/antiferromagnetic (AF) film systems. P(j) governs the entire film coupling J and the exchange bias field H_e and was not measurable until now. The method is verified by torquemetry in a high magnetic field and by reversing its rotation sense. The transition to a new magnetic steady state after rotation reversal is analyzed within a Stoner–Wohlfarth model including thermal relaxation. This transition is completed earlier for strongly coupled grains than for grains with smaller j, which is reflected in the torque curves. We determined P(j) for a sputtered NiFe(16 nm)/IrMn(0.8 nm) film at T=50 K in the hysteretic range of coupling energies and found that P strongly decreases for increasing j.     

The role of oxygen vacancies in magnetism of CoxTi1−xO2−δ films on Si(001) prepared by sol-gel method

Co_xTi_1−xO_2−δ films have been prepared on Si(001) substrates by sol-gel method. When heat treated in air, Co_xTi_1−xO_2−δ films are non-ferromagnetic at room temperature. However, after further vacuum annealing or hydrogenation, Co_xTi_1−xO_2−δ films show room-temperature ferromagnetism (RTFM). When the vacuum annealed Co_xTi_1−xO_2−δ films are reheated in air, the magnetic moments of the films strongly reduce. After these films are vacuum annealed once again, the magnetic moments are greatly enhanced, confirming the role of vacuum annealing in ferromagnetism of Co_xTi_1−xO_2−δ films. The x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and measurements of magnetization (M) vs temperature (T) fail to detect Co clusters in the vacuum annealed and the hydrogenated Co_xTi_1−xO_2−δ films. Oxygen vacancies are formed in Co_xTi_1−xO_2−δ films after vacuum annealing and hydrogenation, determined by XRD and XPS measurements. These results indicate that oxygen vacancies created by vacuum annealing and hydrogenation play an important role in the generation of RTFM in Co_xTi_1−xO_2−δ films.     

Defect‐induced ferrimagnetism in the half‐metallic Co2CrAl and Co2CrSi compounds

Co₂CrAl and Co₂CrSi are amongst the most studied Heusler alloys due to their half‐metallic character. These compounds are also well‐known to present ferromagnetism with high Curie temperatures. We show using first‐principles calculations that the creation of Cr antisites (Cr atoms at the Co sites) induces ferrimagnetism in these compounds without destroying the half‐metallic character of these alloys. The reduction of the total spin moment causes lower external fields and thus smaller energy losses in realistic magnetoelectronic, also known as spintronic, devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Coercivity mechanism of Sm(Co, Cu)5

The mechanism of the high intrinsic coercivity of the Sm(Co_1−xCu_x)₅ (0≦x<1) system was studied by relating the coherency between the lattice constants of hexagonal Sm(Co, Cu)₅ and hcp Co to the coercive force. It was found analytically that the intrinsic coercive force reaches a maximum in the composition range from x=0.6 to 0.8, where the lattice mismatch approaches zero, so that there is a strong correlation between lattice matching and coercive force. When a Sm ion was located within a Sm(Co, Cu)₅ grain and in the outmost edge of the a and c planes of its grain surrounded or not surrounded by the coherent Co phase, the crystal field parameter at each Sm³⁺ site was calculated using a point charge model under the assumption that the Co and Cu atoms located in a grain and the hcp Co atoms situated at the interface uniformly have a charge of 3/5−. The results indicated that the Co phase precipitated coherently along the grain boundaries effectively enhances the magnetocrystalline anisotropy of Sm ions located in the outmost edges of the a and c planes of a Sm(Co, Cu)₅ grain.     

Magnetic properties of (Ga,Mn)As

A summary of experimental findings and theoretical modelling of micromagnetic properties of zinc-blende ferromagnetic semiconductor (Ga,Mn)As is presented. It is shown that the Zener p–d model explains quantitatively observed Curie temperatures in compensation free samples and that major strain-related effects are correctly accounted for, including the presence of the magnetization reorientation transition, observed as a function of hole concentration and temperature. It is evidenced that a presence of a small trigonal distortion could account for both the presence and properties of uniaxial in-plane magnetic anisotropy.     

Reverse Monte Carlo simulations and Raman scattering of an amorphous GeSe4 alloy produced by mechanical alloying

The short and intermediate range order of an amorphous GeSe₄ alloy produced by Mechanical Alloying were studied by Reverse Monte Carlo simulations of its X-ray total structure factor and Raman scattering. The simulations were used to compute the , and partial distribution functions and the , and partial structure factors. We calculated the coordination numbers and interatomic distances for the first and second neighbors. The data obtained indicate that the structure of the alloy has important differences when compared to alloys prepared by other techniques. There are a high number of Se-Se pairs in the first shell, and some of the tetrahedral units formed seemed to be connected by Se-Se bridges.     

Magnetotransport properties of (La0.7Pb0.3MnO3)1−xAgx composites

Magnetic and transport properties of (La_0.7Pb_0.3MnO₃)_1−xAg_x composites are explored in this study. Ferromagnetism is gradually attenuated due to the magnetic dilution with increase of Ag content percentage. Clearly irreversible behavior in the zero-field cooling and field cooling curves at a low field caused by the competition between the magnetization and magnetic domain orientation processes has been observed as x increases. Saturation magnetization decreases as x increases, while ferromagnetic transition temperature remains around 346 K for all composites. The resistivity decreases significantly for (La_0.7Pb_0.3MnO₃)_1−xAg_x composites. It is suggested that introduction of Ag into the niche of grain boundaries forms artificial conducting network and improves the carriers to transport. However, enhancement of magnetoresistance has been observed for the system.     

The role of Co impurities and oxygen vacancies in the ferromagnetism of Co-doped SnO2: GGA and GGA+U studies

The electronic structure and ferromagnetic stability of Co-doped SnO₂ are studied using the first-principle density functional method within the generalized gradient approximation (GGA) and GGA+U schemes. The addition of effective U_Co transforms the ground state of Co-doped SnO₂ to insulating from half-metallic and the coupling between the nearest neighbor Co spins to weak antimagnetic from strong ferromagnetic. GGA+U_Co calculations show that the pure substitutional Co defects in SnO₂ cannot induce the ferromagnetism. Oxygen vacancies tend to locate near Co atoms. Their presence increases the magnetic moment of Co and induces the ferromagnetic coupling between two Co spins with large Co-Co distance. The calculated density of state and spin density distribution calculated by GGA+U_Co show that the long-range ferromagnetic coupling between two Co spins is mediated by spin-split impurity band induced by oxygen vacancies. More charge transfer from impurity to Co-3d states and larger spin split of Co-3d and impurity states induced by the addition of U_Co enhance the ferromagnetic stability of the system with oxygen vacancies. By applying a Coulomb U_O on O 2 s orbital, the band gap is corrected for all calculations and the conclusions derived from GGA+U_Co calculations are not changed by the correction of band gap.     

Ferromagnetism in phosphorus-doped ZnO: First-principles calculation

The electronic structure and magnetic properties of nonmagnetic phosphorus doped ZnO are investigated using first-principles calculation. Both generalized gradient approximation (GGA) and GGA + U calculations show that each substitutional P atom in ZnO induces a magnetic moment of about 1.0 μ_B, which come mainly from the partially filled p orbitals of the substitutional P and its 12 second neighboring O atoms. The magnetic coupling between the moments induced by P doping is ferromagnetic. The calculated electronic structures indicate that the ferromagnetic coupling can be explained in terms of the two band coupling model.     

Nuclear and magnetic order in Y(Ni,Mn)O3 manganites by neutron powder diffraction

Neutron powder diffraction experiments performed on two selected compositions of the yttrium-based solid solution YNi_xMn_1−xO₃ clearly reveal a nuclear order between the Ni²⁺ and Mn⁴⁺ ions in the half-substituted compound YNi_0.50Mn_0.50O₃, so that the crystal structure is no longer described in the conventional orthorhombic Pbnm space group, but in the monoclinic P2₁/n, all over the investigated temperature range (1.5-300 K). However, both X-rays diagrams and neutron patterns of the YNi_0.25Mn_0.75O₃ phase are indexed in the Pbnm orthorhombic-like symmetry, indicating that the Mn and Ni ions are randomly distributed on the octahedral sites.In addition, neutron diffraction points out that the nature of the magnetic ordering is strongly connected to the structural properties. Whereas no long-range 3D-magnetic ordering was detected for the Pbnm YNi_0.25Mn_0.75O₃ phase, the YNi_0.50Mn_0.50O₃ compound exhibits a magnetic transition at The magnetic structure consists of two collinear Mn⁴⁺ and Ni²⁺ ferromagnetic layers (F_x0F_z magnetic configurations) with saturated magnetic moment values of 2.25(2) and 1.57(2) μ_B for Mn⁴⁺ and Ni²⁺, respectively, at 1.5 K.     

The influence of hydrogen annealing on magnetism of Co-doped TiO2 films prepared by sol–gel method

Co-doped TiO₂ (Co_xTi_1−xO₂, 0.05?x?0.2) films have been prepared on Si (0 0 1) substrates by sol–gel method. When heat treated in air, Co_xTi_1−xO₂ films are non-ferromagnetic at room temperature. However, after further annealed in a flowing hydrogen atmosphere, Co_xTi_1−xO₂ films show room-temperature ferromagnetism (RTFM). Measurements of magnetization (M) vs. temperature (T), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) fail to detect Co clusters in the hydrogenated Co_0.1Ti_0.9O₂ films, suggesting that RTFM in the hydrogenated Co_0.1Ti_0.9O₂ films may be intrinsic. But, metal Co appears in the hydrogenated Co_0.2Ti_0.8O₂ films, showing that RTFM in the hydrogenated Co_0.2Ti_0.8O₂ films is as least partly due to metal Co. These results indicate that hydrogen annealing can produce room-temperature ferromagnetism in Co_xTi_1−xO₂ films, but it should be carefully designed to avoid the formation of metal Co in the hydrogenated Co_xTi_1−xO₂ films.     

Monte Carlo calculation of the magnetization behavior and the magnetocaloric effect of interacting particles

The magnetization behavior and the magnetic entropy change of a system made up of ferromagnetically interacting particles are calculated by using Monte Carlo simulation. The effect of the magnetic anisotropy of particles and the dipolar–dipolar interaction between particles on the magnetization and the magnetic entropy change of the system are discussed. It is found that there is no spontaneous magnetization, both the magnetic anisotropy of particles and the dipolar–dipolar interaction between particles restrains the system's magnetizing in the external magnetic field. The magnetic entropy change decreases with the increase in temperature in the system without the dipolar–dipolar interaction; however, the dipolar–dipolar interaction between particles makes the magnetic entropy change of the system have maximum value at low temperatures.