Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Crystal structures of stage-n iodine-intercalated compounds IBi2nSr2nCanCu2nOx

The crystal structure of stage-3 iodine-intercalated superconducting IBi₆Sr₆Ca₃Cu₆O_x has been determined by transmission electron microscopy to belong to the space group Pma2 with lattice parameters a=5.4Å, B=5.4Å and C=49.4Å. Ioidine atoms intercalated between every three Bi---O bilayers expand the distance between the Bi---O layers by 3.6Å and alter the atomic stacking across Bi---O layers from the staggered configuration characteristic of host superconducting Bi₂Sr₂CaCu₂O_x to an aligned configuration characteristic of stage-1 iodine-intercalated superconducting IBi₂Sr₂CaCu₂O_x. Higher-stage intercalation has also been observed as stacking faults which predominantly contain both stage-2 and stage-3 phases. The space groups and c-axis dimensions of the higher-stage phases have been deduced to be Pma2 with c=3.6+15.3n Å when stage number n is odd, and Bbmb with c=2(3.6+15.3n) Å when n is even.     

Non-1/mb power suppressed contributions to inclusive B → Xsll decays

We compute non-perturbative contributions to B → X_sl⁺l⁻ that are not explicitly suppressed by powers of the b-quark mass. They are proportional to and arise from an interference between the free-quark amplitude and high order terms in the matrix element of the four-quark operator s⁻γ^μ(1 − γ₅)cc^−βγ_μ(1 − γ₅)b_β. This correction is found to be small over most of the dalitz plot except near the charm threshold. Unfortunately, the perturbative computation we have performed is invalid near charm threshold and we do not except to see the structure found at lowest order reproduced in the data. We conclude that these non-perturbative contributions do not significantly modify the previous analysis of B → X_sl⁺l⁻.     

Ga1-xInxNyAs1-y/GaAs量子阱中电子-LO声子的散射率

在有效质量近似下利用打靶法求出Ga_1-xIn_xN_yAs_1-y/GaAs量子阱中的本征能级E_n, 并通过费米黄金规则计算电子-LO声子由第一激发态到基态的散射率和平均散射率随温度、阱宽以及氮(N)和铟(In)组分变化的规律. 计算结果表明: 在In 组分恒定的情况下, 随着N组分的增加, 散射率和平均散射率增加; 在N组分恒定的情况下, 随着In组分的增加, 散射率和平均散射率减小; 随着温度的增加, 在温度较低时散射率和平均散射率随温度的增加变化不大, 在温度较高时随温度的增加而增加; 随着阱宽的增加, 散射率和平均散射率都是先增加到一个最大值, 然后再减小, 最大值出现在阱宽200 Å附近. 计算结果对Ga_1-xIn_xN_yAs_1-y/GaAs量子阱在光电子器件应用方面有一定的指导意义. 关键词： 费米黄金规则 1-xIn_xN_yAs_1-y/GaAs量子阱')" href="#">Ga_1-xIn_xN_yAs_1-y/GaAs量子阱 LO声子 散射率     

The incommensurate modulation in the Bi2Sr2−xCaxCuO6 superconductor, and its relation to the modulation in Bi2Sr2−xCaxCu2O8

The modulation of the (221) superconducting Bi₂Sr_2−xCa_xCuO₆ phase has been analyzed by X-ray diffraction, using four-dimensional symmetry theory. The pseudo-orthorhombic diffraction pattern is a superposition of two twin related components, such that the main reflections with hkl and hk m superimpose, but the satellite hklm and hk m do not. The latter feature allows separation of the twin intensities. The modulation analysis in superspace group P:Aa:1 shows displacements similar to those observed in the 2212 compound [Y. Gao et al., Science 241 (1988) 954] but with generally larger displacements. In particular, the c-axis displacement amplitude of the Cu atoms is increased to almost 0.5 Å. This and the obliqueness of the q vector (q=0.214a^*+0.61c^*) indicate the absence of a restraining influence exerted by the CuO₂/Sr(Ca)/CuO₂ double layers in the multi-Cu layer phases.     

Ba1-xB2-y-zO4SixAlyGaz晶体和频可调谐深紫外飞秒激光器

介绍了一种基于新型非线性晶体Ba_1-xB_2-y-zO₄Si_xAl_yGa_z 的可调谐深紫外飞秒激光光源. 从理论上分析了基频光和倍频光在通过非线性晶体时所造成的空间走离和群速度失配, 为了补偿空间走离以及波长调谐过程中晶体折射造成的光束偏离现象, 将两块相同的倍频晶体成镜像放置来产生二次谐波. 并调节延迟线的长度来补偿基频光和倍频光之间的群速度失配, 从而提高和频转换效率. 然后通过和频方式进行三倍频和四倍频来突破晶体相位匹配条件的限制, 产生了波长低于200 nm的深紫外飞秒激光. 利用钛宝石激光器提供基频光光源, 最终在250–300 nm, 192.5–210 nm 范围内获得了高重频、可调谐超短脉冲紫外和深紫外激光. 并在基频光波长为800 nm时, 得到的二倍频、三倍频和四倍频的功率分别为1.28 W, 194 mW和5.8 mW, 相对于前一级的转换效率依次为46.14%, 15.16%和3%. 采用互相关法测量得到266.7 nm紫外激光的脉冲宽度约为640.4 fs.     

Luminescence from Si-Si1−xGex/Si1−yCy-Si structures

Near band edge photoluminescence has been obtained from Si_1−yC_y quantum well (QW) and neighboring Si_1−xGe_x/Si_1−yC_y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si_1−xGe_x layer has been observed from neighboring Si_1−xGe_x and Si_1−yC_y DQW structures.     

含铜铁电电容器SrRuO3/Pb(Zr0.4Ti0.6)O3/SrRuO3/Ni-Al/Cu/Ni-Al/SiO2/Si异质结的研究

应用磁控溅射法以Ni-Al同时作为Cu与SiO₂/Si,Cu与SRO薄膜之间的阻挡层材料,将Cu与SiO₂/Si衬底和氧化物薄膜电极隔离,避免它们在高温氧气氛中发生化学反应和互扩散,实现了Cu薄膜与氧化物铁电电容器的集成.采用X射线衍射仪(XRD)和原子力显微镜(AFM)研究了不同温度下快速退火的SrRuO₃(SRO)/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu异质结的微结构和表面形貌,结果发现SRO/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu多层异质结薄膜在高达750 ℃仍然具有较强的Cu衍射峰和比较平整的表面,显示出了很好的高温热稳定性.研究了"室温长高温退"和"低温长高温退"两种工艺手段,发现在制备含Cu多层氧化物薄膜异质结时,低温长高温后退火的方式要优于常规的室温长高温后退火方式,通过低温长高温退工艺可以缓解应力、削弱界面粗化和避免高温生长对阻挡层和Cu薄膜结构的破坏.最后结合sol-gel法将Pb(Zr_0.4Ti_0.6)O₃(PZT)生长在该含Cu异质结上,制备得SRO/PZT/SRO/Ni-Al/Cu/Ni-Al/SiO₂/Si含Cu铁电电容器,研究了电容器的薄膜结构、铁电性能和漏电特性等,发现制备的含Cu铁电电容器具有很好的铁电性能,如电滞回线趋势饱和,剩余极化强度高达~42 μC/cm²,矫顽电压为~1.0 V,介电常数~1600,漏电流~1.83×10^-4 A/cm²,以及良好的抗疲劳特性和保持特性等,表明导电性优良的Cu薄膜可以应用于高密度高性能铁电电容器.对其漏电机理研究表明,SRO/PZT/SRO含Cu铁电电容器满足空间电荷限制传导机理. 关键词： Cu PZT 铁电电容器 Ni-Al     

Magnetoresistance of Fe3O4/Au/Fe3O4 and Fe3O4/Au/Fe spin-valve structures

A detailed study of the in-plane magnetotransport properties of spin valves with one and two Fe₃O₄ electrodes is presented. Fe₃O₄/Au/Fe₃O₄ spin valves exhibit a clear anisotropic magnetoresistance in small magnetic fields but no giant magnetoresistance (GMR). The absence of GMR in these structures is due to simultaneous magnetization reversal in the two Fe₃O₄ layers. By contrast, a negative GMR effect is measured on Fe₃O₄/Au/Fe spin valves. The negative GMR is attributed to an electron spin scattering asymmetry at the Fe₃O₄/Au interface or an induced spin scattering asymmetry in the Au interfacial layers.     

Velopharyngeal aerodynamics of /m/ and /p/ in tracheoesophageal speech

The purpose of this study was to compare oral pressure (P_o), nasal airflow (V_n), and velopharyngeal (VP) orifice area estimates from 12 tracheoesophageal (TE) and 12 laryngeal speakers as they produced /p/ and /m/ in syllable series. The findings were as follows: (1) TE speakers produced greater P_o than the laryngeal speakers; (2) for /p/, TE speakers generated V_n, and VP orifice area estimates comparable with, or less than, the laryngeal speakers; and (3) for /m/, TE speakers had V_n and VP orifice area estimates greater than the laryngeal speakers. The elevated P_o could be the result of several factors such as high source driving pressures and vocal tract volume changes postlaryngectomy. Attempts at more precise articulation, and subsequently less coarticulation, by the TE speakers may explain the V_n and VP orifice area estimates for /p/ and /m/. TE speakers may be limiting the oral-nasal cavity coupling for /p/ (smaller VP gap, less V_n) in an attempt to produce a very precise oral /p/. For /m/, TE speakers may be attempting to overtly mark the consonant as a nasal (greater V_n, larger VP gap). Further studies are needed to confirm/refute the explanations postulated here regarding the VP aerodynamic differences that were identified.     

Dependence of the electronic parameters on the InyGa1−yAs quantum well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells

The variation of the electronic parameters in the subband as a function of the In_yGa_1−yAs quantum well width in modulation-doped strained Al_xGa_1−xAs/In_yGa_1−yAs/GaAs single quantum wells were investigated by means of Shubnikov-de Haas (S-dH) and Van der Pauw Hall-effect measurements. The fast Fourier transform (FFT) of the S-dH oscillations and the Hall-effect data showed that the carrier density and the mobility of the two-dimensional electron gas (2DEG) occupied in the subband increased as the quantum well width increased. The increase in the 2DEG density with increasing the In_yGa_1−yAs well width originated from an increase in the energy difference between the energy level of the electronic subband and Fermi energy, and the increase in the 2DEG mobility is attributed to a decrease of the scattering source. The electronic subband energies, the corresponding wavefunctions, and the Fermi energies in the Al_xGa_1−xAs/In_yGa_1−yAs/GaAs single quantum wells were calculated by a self-consistent method taking into account the exchange-correlation effect together with the strain and nonparabolicity effects. These results indicate that the electronic parameters in Al_xGa_1−xAs/In_yGa_1−yAs/GaAs strained single quantum wells are significantly dependent on the quantum well width.     

What can we learn from B→DsKπ, Bd→DsKπ and Bd→DsK decays?

We study the nonresonant three-body decays of B⁺→D^(*)−_sK⁺π⁺ and B_d→D_s^(*)−K⁰π⁺. We find that these decays can provide the information on the time-like form factors of D^(*)_sK. We also explicitly investigate B_d→D_s^(*)−K^*+ decays by discriminating the nonresonant contributions with the unknown D^(*)_s wave functions being fixed by the measured mode of B_d→D_s⁻K⁺.     

Effect of Pr and Ca substitution on superconductivity in Y(1−x−yPrxCay)Ba2Cu3O7−δ

Pr substituted at constant Ca concentration for Y in (Y_1−x−yPr_xCa_y)Ba₂Cu₃O_7−δ superconductors have been prepared under identical conditions and the temperature dependence of the electrical resistivity of these samples are measured. The resistively determined values of T_c decrease linearly with increasing x (0 ≤ x ≤ 0.2) for constant y = 0.10 and 0.15 which provides convincing evidence that the suppression of superconductivity by Pr is mainly due to magnetic pair breaking. The suppression of superconductivity can also be correlated to the observed changes in oxygen content determined by iodometric analysis and to the average Cu-valences. However, it is found that the observed suppression of T_c cannot be compensated by appropriate hole doping with Ca.     

Magnetic properties of Mn-substituted GdCoxMn1−xO3 and LaCoxMn1−xO3

Partial substitution of manganese by cobalt in rare-earth perovskites REMnO₃ leads to unusual magnetic phenomena because of the simultaneous presence of Mn³⁺, Mn⁴⁺, Co²⁺ and Co³⁺ species. The magnetic nature of the RE cation plays a fundamental role in the magnetic properties. We present herein two specific families: for RE=La the magnetic behavior of the |Co+Mn| network is observed, while for Gd its strong magnetic moment interacts with the transition metals, leading to a spin reversal state. Magnetic interactions are maximized at x=0.50, as if two regimes exist: for x<0.5 Co substitutes Mn in the REMnO₃ manganite, and for x>0.5 Mn substitutes Co in the RECoO₃ cobaltite.     

Sr掺杂对La_(1-x)Sr_xMnO_3/LaAlO_3/SrTiO_3界面电子结构的影响

采用基于密度泛函理论的第一性原理计算方法,系统地研究了La_(1-x)Sr_xMnO_3层中Sr的掺杂方式和掺杂量对4La_(1-x)Sr_xMnO_3/3LaAlO_3/4SrTiO_3(LSMO/LAO/STO)异质结构原子和电子结构的影响.结果表明:对于相同的Sr掺杂量,掺杂方式的差异对体系电子结构的影响微弱,不会导致体系发生金属-绝缘体转变;掺杂量的不同对体系电子结构有着显著的影响,当Sr的掺杂量较少时,LAO/STO界面处存在着准二维电子气,当Sr的掺杂量高于1/3时,LAO/STO界面处准二维电子气消失.我们相信,Sr的引入以及通过Sr掺杂量的改变可以对LSMO覆盖层极化进行调控,这也是导致体系LAO/STO界面处金属-绝缘体转变的可能原因,进一步为极化灾变机制导致的界面处电子重构提供了证据.     

Superconductivity in Ba2−xSrxYCu3Oz prepared at GPa

The compounds Ba_1.4Sr_0.6YCu₃O_z (7.0≤z<7.4) were synthesized at 2 GPa to clarify the effect of high temperature and pressure on the superconducting properties. The structure as observed by powder X-ray diffraction was tetragonal for z≥7.2, and orthorhombic or tetragonal for z<7.1. It has been revealed that high-pressure syntheses suppress the superconductivity in the compounds with z<7.1. Recovery of the superconducting properties occurs above z≥7.2. The effect of Sr substitution on the superconducting properties was also studied. The magnitude of diamagnetism at 5–30 K decreases monotonically from −0.003 to −0.0002 emu/g Oe with increasing x in Ba_2−xSr_xYCu₃O_z (x≥1.2).     

Resistivity and thermoelectric power of Bi2Sr2Ca−xPrxCu2Oy system

Samples of Bi₂Sr₂Ca_1−xPr_xCu₂O_y have been characterized by resistivity and thermoelectric power measurements. All metallic samples show superconductivity with a maximum T_c = 90 K at X = 0.2. The sample of x = 0.6 shows a crossover from hopping conduction at low temperature above T_c to metallic conduction at high temperature. For the metallic samples below x = 0.6, the results of thermoelectric power are well fitted by both of a phenomenological band spectrum model and the Nagaosa and Lee model.     

Role of the interfacial state: a comparison of Co/Al2O3/NiFe and La0.7Ca0.3MnO3/Al2O3/La0.7Ca0.3MnO3 tunnel junctions

Two junctions of Co/Al₂O₃/NiFe (J₁) and La_0.7Ca_0.3MnO₃/Al₂O₃/La_0.7Ca_0.3MnO₃ (J₂) were prepared to compare their tunneling magnetoresistance (TMR) in consideration of interfacial state effects. The structural and transport properties of the layered samples were characterized by X-ray and magnetic measurements, showing indeed an interfacial state dependence. The influences such as from a CoO sublayer in J₁ and from interfacial coherence in J₂ were discussed. The largest TMR observed amounts to 16% (290 K) for J₁ and 65% (40 K) for J₂.     

Electrical transport and superconductivity in the Al2O3-Bi2Sr1.8Ca1.2Cu2Oy and MgO-Bi2Sr1.8Ca1.2Cu2Oy composites

We have measured the resistivities of Al₂O₃-Bi₂Sr_1.8Ca_1.2Cu₂O_y and MgO-Bi₂Sr_1.8Ca_1.2Cu₂O_y composites with the nominal Bi₂Sr_1.8Ca_1.2Cu₂O_y volume fraction, ₂₂₁₂, ranging from 0.15 to 1.00. For the Al₂O₃-Bi₂Sr_1.8Ca_1.2Cu ₂O_y composites, we find for the samples with ₂₂₁₂≥0.6 that the superconducting transition temperature, T_c, is not disturbed by the addition of Al₂O₃. For ₂₂₁₂<0.3, no zero-resistivity state is observed. For the MgO-Bi₂Sr_1.8Ca_1.2Cu₂O_y composites, T_c is barely disturbed for the samples with ρ₂₂₁₂≥0.7. No superconducting state is observed for the samples with ρ₂₂₁₂<0.35. The variation of (300 K) with ρ₂₂₁₂ indicates a three-dimensional percolating Bi-Sr-Ca-Cu-O matrix occurring at ρ₂₂₁₂≈0.19 and ≈0.15 in Al₂O₃-Bi₂Sr_1.8Ca_1.2 Cu₂O_y and MgO-Bi₂Sr_1.8Ca_1.2Cu₂O_y, respectively. Both resistivity and magnetization measurements suggest that the reactions of Bi₂Sr_1.8Ca_1.2Cu₂O_y with MgO are weaker than with Al₂O₃.     

碱金属Li,Na,K,Rb,Cs,Fr的ns2S1/2,np2P1/2,3/2, nd2D3/2,5/2 和nf2F5/2,7/2 里德伯能级理论研究

本文在多通道量子数亏损理论(MQDT)框架下,利用相对论多通道理论(RMCT),分别在冻结实近似、 考虑Δl=-1的偶极极化效应、Δl=+1的偶极极化效应、Δl=± 1的偶极极化效应、伸缩模效应以及同时考虑偶极极化效应和伸缩模效应等不同层次近似下,系统地计算了碱金属Li, Na, K, Rb, Cs和Fr七个里德伯系列的能级,即ns²S_1/2, np²P_1/2, np²P_3/2, nd²D_3/2, nd²D_5/2, nf²F_5/2 和nf²F_7/2.计算结果表明,电子关联效应对碱金属原子的里德伯能级的影响很大.总的来说,偶极极化效应比伸缩模效应重要,而在偶极极化效应中, Δl = + 1的偶极极化效应比Δl = - 1的偶极极化效应重要.但对于Na的ns²S_1/2,(nd²D_3/2,nd²D_5/2)里德伯系列的能级,和Li的(np²P_1/2,np²P_3/2)里德伯系列的能级,是伸缩模效应比较重要.