TiO2(110)面的弛豫结构及吸附O2的密度泛函研究

采用DFT/B3LYP方法研究了TiO2 ( 110 )的完整和氧缺陷表面的弛豫构型 ,并对O2 在氧缺陷表面的三种可能吸附构型进行了优化 ,计算了它们的吸附能、振动频率和重叠布居 .分析并预测了吸附后可能产生的物种 .本文的计算结果与XPS ,TPD和ELS等实验吻合     

MgO缺陷和不规则表面吸附Cl2的电子结构研究

采用从头算程序对MgO表面 3种不同配位位置吸附Cl2 的构型进行优化 ,并用扩展休克尔紧束缚 (EHT)晶体轨道方法对MgO的缺陷和不规则表面吸附Cl2的可能构型进行能带计算 ,讨论了吸附前后能带组成和成键性质的变化。研究表明 :MgO表面吸附Cl2 将更趋向于吸附在O原子上而非Mg原子上 ,而且在 3种配位中MgO表面三配位氧最有利于吸附Cl2 ;吸附时 ,电子从O原子转移到Cl2 分子的反键轨道 ,但是各种吸附构型的MgO表面对Cl2 的吸附作用均比较微弱 ,是典型的物理吸附。     

MgO缺陷和不规则表面吸附CO的能带和电子结构研究

采用从头算程序优化MgO表面三种不同配位位置吸附CO构型,并用扩展休克尔紧束缚(EHT)晶体轨道方法对MgO的缺陷和不规则表面吸附CO的可能构型进行能带计算,讨论了能带结构及组成,不同构型吸附前后能带和成键性质的变化,以及吸附前后的电荷转移和吸附键的变化规律。研究结果发现,CO的C端更有利于在MgO固体表面的吸附,具有氧缺陷结构的MgO更有利于吸附分解CO。     

O2在具有氧和镁缺陷MgO(001)表面的吸附

在密度泛函理论的框架下，采用嵌入点电荷簇模型研究了O2在具有氧缺陷和镁缺陷MgO(001)表面上的吸附.用电荷自洽的方法确定了点电荷的值.计算结果表明，O2倾向吸附在具有氧缺陷的MgO(001)表面上.通过和我们近期研究过的O2在低配位的边、角上吸附结果相比较，发现具有氧缺陷的MgO(001)表面更加有利于O2的吸附和解离. Mülliken电荷分析表明，电荷由底物向吸附的O2反键轨道上转移是导致O2键强削弱的主要原因.势能曲线表明，O2在具有氧缺陷的MgO(001)表面上发生解离所需要克服的能垒比在角阳离子端发生解离所需克服的能垒有大幅度降低.     

H2在WO3表面解离吸附反应的第一性原理研究

采用第一性原理方法对H2在WO3表面的解离吸附反应进行了研究.首先通过清洁表面模型的计算,证明了c(2×2)重构表面是最稳定的WO3(001)表面构型;进而研究了4种可能的H2解离吸附模型,结果表明最可能的吸附反应为两个氢原子吸附在表面O1c原子上,氢原子被氧化在表面形成水,同时伴随着产生一个表面氧空位.态密度结果表明氢的吸附导致体系能带下移,导带部分填充电子,从而阐明了实验中WO3吸附H2后电导率上升的微观机理.     

CeO2(110)表面上CO氧化反应的密度泛函理论研究

利用密度泛函理论系统研究了O2与CO在CeO2(110)表面的吸附反应行为. 研究表明, O2在洁净的CeO2(110)表面吸附热力学不利, 而在氧空位表面为强化学吸附, O2分子被活化, 可能是重要的氧化反应物种. CO在洁净的CeO2(110)表面有化学吸附与物理吸附两种构型, 前者形成二齿碳酸盐物种, 后者与表面仅存在弱的相互作用. 在氧空位表面, CO可分子吸附或形成碳酸盐物种, 相应吸附能均较低. 当表面氧空位吸附O2后(O2/Ov), CO可吸附生成碳酸盐或直接生成CO2, 与原位红外光谱结果相一致. 过渡态计算发现,O2/Ov/CeO2(110)表面的三齿碳酸盐物种经两齿、单齿过渡态脱附生成CO2. 利用扩展休克尔分子轨道理论分析了典型吸附构型的电子结构, 说明表面碳酸盐物种三个氧原子电子存在离域作用, 物理吸附的CO及生成的CO2电子结构与相应自由分子相似.     

氧化铜表面臭氧分解路径及表面氧物种生成机理研究

基于密度泛函理论（DFT）计算研究了O3在完整和具有氧空位的CuO(111)表面吸附的吸附位、吸附结构、吸附能和电子转移情况,比较了O3在完整表面和具有氧空位的表面分解的路径和能垒,分析了氧空位和表面吸附氧的生成机理。结果表明,在完整CuO表面,O3分子通过化学吸附或物理吸附表面结合,吸附能最高为-1.22eV（构型bri(2)）。O3在具有氧空位的CuO表面均为化学吸附,吸附能最高为-2.95eV（构型ovbri(3)）,显著高于完整表面的吸附能。O3吸附后,Cu吸附位的电荷密度减小,O3中的O原子附近的电荷密度显著增强,电荷从CuO表面转移到O3,并形成Cu-O离子键。O3分解后形成了超氧物种,提高了表面的氧化活性。在完整表面,以构型bri(2)为起始构型的路径反应能垒最低,为0.52eV;O2*在完整表面的脱附所需要的最低能量为0.42eV,形成氧空位的O2*脱附能为2.06eV。在具有氧空位的表面,O3分解的反应能垒为0.30eV（构型ovbri(1)）和0.12eV（构型ovbri(3)）,均低于完整表面的反应能垒;分解形成的O2*的最低脱附能也低于完整表面,为0.27eV。可见,氧空位的形成提高了吸附能,降低了反应能垒,使O3分子更容易吸附在CuO表面,并加快了O3的催化分解。     

CO在不同氧缺陷Cu1/CeO2(110)表面的吸附：DFT+U

本研究基于量子化学的密度泛函理论(DFT)研究了CO在理想和氧缺陷Cu₁/Ce O₂(110)表面上的吸附,并且对CO分子在催化剂表面不同位点的吸附特性进行了计算和分析。结果表明,Cu掺杂可以显著提高CO在催化剂表面的吸附性能,顶位是CO最稳定的吸附位,CO在空穴位上的吸附能力很弱。与理想表面相比,线性缺陷的构造可以进一步提高CO在催化剂表面的吸附性能。对吸附构型PDOS的分析表明,大量的轨道杂化是CO在Cu₁/Ce O₂(110)表面吸附性能较强的原因。     

钙钛矿型La_((1 x)/2)Sr_((1-x)/2)Co_(1-x)Cu_xO_3催化CO氧化活性与表征

研究了钙钛矿型LaSrCoCu_xO_3催化剂对CO氧化反应的催化活性及其表面氧的催化作用．结果表明，x＝0．4的催化剂对CO氧化具有最高催化活性，常压及本实验条件下CO完全氧化的最低温度为168℃；催化剂均为氧缺陷化合物，吸附于表面晶格氧缺陷上的吸附氧是CO氧化反应的活性氧物种；并发现催化剂中存在有非常价态的C04 ，认为CO氧化反应是通过吸附氧调变Co3 和Co4 价态而进行．     

CeO_2用于柴油机尾气NO还原的DFT研究

采用密度泛函理论广义梯度近似的RPBE方法结合周期性平板模型研究了NO分子分别以N端和O端两种吸附形式在洁净的以及具有氧空穴的CeO_2(110)表面的吸附行为。对比了不同的吸附位及不同覆盖度下的几何构型参数与吸附能。研究结果表明:CeO_2(110)表面O原子上的吸附构型为较稳定的吸附构型,且N端吸附较O端有利;NO在洁净CeO_2(110)表面为物理吸附;当CeO_2(110)表面存在氧空穴时,吸附能明显增大且均大于40 k J·mol~(-1),为化学吸附;覆盖度为0.25 m L时的吸附比较稳定。计算了NO分子吸附前后的态密度以及电荷密度,研究发现:NO分子与底物之间具有相互作用,且整个吸附体系发生了电荷从Ce原子向NO分子的转移,O端吸附时转移的电荷较N端的多。     

吸附氢气后的钯团簇在氧化亚铜表面上的稳定性研究

为了探究吸附H2后的Pdn团簇在Cu2O（111）完整表面和铜缺陷表面上的稳定性,计算了负载在Cu2O（111）完整表面和铜缺陷表面上的Pdn（n=1-4）对H2分子的最稳定吸附结构;利用在给定H2压力和温度下Pdn / Cu2O表面吸附H2的相图揭示了Pdn团簇在Cu2O（111）两个表面的变化情况。结果表明,在吸附了H2分子以后,Pdn团簇更倾向于保持原有的结构,且随着Pd团簇的增大,吸附H2的数量也逐渐增长。     

Surface dependence of CO2 adsorption on Zn2GeO4

An understanding of the interaction between Zn(2)GeO(4) and the CO(2) molecule is vital for developing its role in the photocatalytic reduction of CO(2). In this study, we present the structure and energetics of CO(2) adsorbed onto the stoichiometric perfectly and the oxygen vacancy defect of Zn(2)GeO(4) (010) and (001) surfaces using density functional theory slab calculations. The major finding is that the surface structure of the Zn(2)GeO(4) is important for CO(2) adsorption and activation, i.e., the interaction of CO(2) with Zn(2)GeO(4) surfaces is structure-dependent. The ability of CO(2) adsorption on (001) is higher than that of CO(2) adsorption on (010). For the (010) surface, the active sites O(2c)···Ge(3c) and Ge(3c)-O(3c) interact with the CO(2) molecule leading to a bidentate carbonate species. The presence of Ge(3c)-O(2c)···Ge(3c) bonds on the (001) surface strengthens the interaction of CO(2) with the (001) surface, and results in a bridged carbonate-like species. Furthermore, a comparison of the calculated adsorption energies of CO(2) adsorption on perfect and defective Zn(2)GeO(4) (010) and (001) surfaces shows that CO(2) has the strongest adsorption near a surface oxygen vacancy site, with an adsorption energy -1.05 to -2.17 eV, stronger than adsorption of CO(2) on perfect Zn(2)GeO(4) surfaces (E(ads) = -0.91 to -1.12 eV) or adsorption of CO(2) on a surface oxygen defect site (E(ads) = -0.24 to -0.95 eV). Additionally, for the defective Zn(2)GeO(4) surfaces, the oxygen vacancies are the active sites. CO(2) that adsorbs directly at the Vo site can be dissociated into CO and O and the Vo defect can be healed by the oxygen atom released during the dissociation process. On further analysis of the dissociative adsorption mechanism of CO(2) on the surface oxygen defect site, we concluded that dissociative adsorption of CO(2) favors the stepwise dissociation mechanism and the dissociation process can be described as CO(2) + Vo → CO(2)(δ-)/Vo → CO(adsorbed) + O(surface). This result has an important implication for understanding the photoreduction of CO(2) by using Zn(2)GeO(4) nanoribbons.     

Conversion of N2O to N2 on MgO （001） Surface with Vacancy： A DFT Study

The adsorption and decomposition of NzO at regular and defect sites of MgO (001) surface have been studied using cluster models embedded in a large array of point charges (PCs) by DFT/B3LYP method. The results indicate that the MgO (001)surface with oxygen vacancies exhibits high catalytic reactivity toward N2O adsorptive-decomposition. It is different from the regular MgO surface or the surface with magnesium vacancies.Much elongation of O—N bond of N2O after adsorption at oxy-gen vacancy site with O end down shows that O—N bond has been broken with concurrent production of N2, leaving a regu-lar site instead of the original oxygen vacancy site (F center ).The MgO (001) surface with magnesium vacancies hardly ex-hibits catalytic reactivity. It can be concluded that N2O dissoci-ation likely occurs at oxygen vacancy sites of MgO (001) sur-face, which is consistent with the generally accepted viewpoint in the experiments. The potential energy surface (PES) reflects that the dissociation process of N2O does not virtually need to surmount a given energy barrier.     

Ab initio cluster calculations on the electronic structure of oxygen vacancies at the polar ZnO(0001) surface and on the adsorption of H2, CO, and CO2 at these sites

Oxygen vacancies at the polar O terminated (0001) surface of ZnO are of particular interest, because they are discussed as active sites in the methanol synthesis. In general, the polar ZnO surfaces are stabilized by OH groups, therefore O vacancies can be generated by removing either O atoms or OH or H2O groups from the surface. These defects differ in the number of electrons in the vacancy and the number of OH groups in the neighborhood. In the present study, the electronic structure and the adsorption properties of four different types of oxygen vacancies have been investigated by means of embedded cluster calculations. We performed ab initio calculations on F+ like surface excitations for the different defect types and found that the transition energies are above the optical band-gap, while F+ centers in bulk ZnO show a characteristic optical excitation at 3.19 eV. Furthermore, we studied the adsorption of CO2 and CO at the different defect sites by DFT calculations. We found that CO2 dissociates at electron rich vacancies into CO and an O atom which remains in the vacancy. At the OH vacancy which contains an unpaired electron CO2 adsorbed in the form of CO2-, while it adsorbed as a linear neutral molecule at the H2O defect. CO adsorbed preferentially at the H2O defect and the OH defect, both with a binding energy of 0.3 eV.     

Reactivity of V2O3(0001) surfaces: molecular vs dissociative adsorption of water

The adsorption of water on V2O3(0001) surfaces has been investigated by thermal desorption spectroscopy, high-resolution electron energy loss spectroscopy, and X-ray photoelectron spectroscopy with use of synchrotron radiation. The V2O3(0001) surfaces have been generated in epitaxial thin film form on a Rh(111) substrate with three different surface terminations according to the particular preparation conditions. The stable surface in thermodynamic equilibrium with the bulk is formed by a vanadyl (VO) (1x1) surface layer, but an oxygen-rich (radical3xradical3)R30 degrees reconstruction can be prepared under a higher chemical potential of oxygen (microO), whereas a V-terminated surface consisting of a vanadium surface layer requires a low microO, which can be achieved experimentally by the deposition of V atoms onto the (1x1) VO surface. The latter two surfaces have been used to model, in a controlled way, oxygen and vanadium containing defect centres on V2O3. On the (1x1) V=O and (radical3xradical3)R30 degrees surfaces, which expose only oxygen surface sites, the experimental results indicate consistently that the molecular adsorption of water provides the predominant adsorption channel. In contrast, on the V-terminated (1/radical3x1/radical3)R30 degrees surface the dissociation of water and the formation of surface hydroxyl species at 100 K is readily observed. Besides the dissociative adsorption a molecular adsorption channel exists also on the V-terminated V2O3(0001) surface, so that the water monolayer consists of both OH and molecular H2O species. The V surface layer on V2O3 is very reactive and is reoxidised by adsorbed water at 250 K, yielding surface vanadyl species. The results of this study indicate that V surface centres are necessary for the dissociation of water on V2O3 surfaces.     

Interaction of water with ordered theta-Al(2)O(3) ultrathin films grown on NiAl(100)

The structure of an ordered, ultrathin theta-Al(2)O(3) film grown on a NiAl(100) single-crystal surface was studied by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and low-energy electron diffraction (LEED), and its interaction with water was investigated with temperature programmed desorption (TPD) and XPS. Our results indicate that H(2)O adsorption on the theta-Al(2)O(3)/NiAl(100) surface is predominantly molecular rather than dissociative. For theta(H)()2(O) < 1 ML (ML = monolayer), H(2)O molecules were found to populate Al(3+) cation sites to form isolated H(2)O species aligned in a row along the cation sites on the oxide surface with a repulsive interaction between them. For theta(H)()2(O) > 1 ML, three-dimensional ice multilayers were observed to form, which then desorb during TPD with approximate zero-order kinetics as expected. A small extent of H(2)O dissociation was observed to occur on the theta-Al(2)O(3)/NiAl(100) surface, which was attributed to the presence of a low concentration of oxygen atom vacancies. Titration of these defect sites with adsorbed H(2)O molecules revealed an estimated defect density of 0.05 ML for the theta-Al(2)O(3)/NiAl(100) system consistent with the ordered nature of the synthesized oxide film.     

Periodic density functional theory study of methane activation over La(2)O(3): activity of O(2-), O(-), O(2)(2-), oxygen point defect,and Sr(2+)-doped surface sites

Results of gradient-corrected periodic density functional theory calculations are reported for hydrogen abstraction from methane at O(s)(2-), O(s)(-), O(2)(s)(2-) point defect, and Sr(2+)-doped surface sites on La(2)O(3)(001). The results show that the anionic O(s)(-) species is the most active surface oxygen site. The overall reaction energy to activate methane at an O(s)(-) site to form a surface hydroxyl group and gas-phase (*)CH(3) radical is 8.2 kcal/mol, with an activation barrier of 10.1 kcal/mol. The binding energy of hydrogen at an site O(s)(-) is -102 kcal/mol. An oxygen site with similar activity can be generated by doping strontium into the oxide by a direct Sr(2+)/La(3+) exchange at the surface. The O(-)-like nature of the surface site is reflected in a calculated hydrogen binding energy of -109.7 kcal/mol. Calculations indicate that surface peroxide (O(2(s))(2-)) sites can be generated by adsorption of O(2) at surface oxygen vacancies, as well as by dissociative adsorption of O(2) across the closed-shell oxide surface of La(2)O(3)(001). The overall reaction energy and apparent activation barrier for the latter pathway are calculated to be only 12.1 and 33.0 kcal/mol, respectively. Irrespective of the route to peroxide formation, the O(2)(s)(2-) intermediate is characterized by a bent orientation with respect to the surface and an O-O bond length of 1.47 A; both attributes are consistent with structural features characteristic of classical peroxides. We found surface peroxide sites to be slightly less favorable for H-abstraction from methane than the O(s)(-) species, with DeltaE(rxn)(CH(4)) = 39.3 kcal/mol, E(act) = 47.3 kcal/mol, and DeltaE(ads)(H) = -71.5 kcal/mol. A possible mechanism for oxidative coupling of methane over La(2)O(3)(001) involving surface peroxides as the active oxygen source is suggested.     

Adsorption and migration growth of the Ce,O, and F adatoms on the CeO2 (111) surface: A density functional theory study

In order to investigate the microscopic behavior of the crystal surface growth of the fluorinated cerium dioxide polishing powder, the adsorption and migration of the Ce, O, and F atoms on the CeO₂ (111) surface were studied by using density functional theory with Hubbard correction +U. The adsorption energies of three single atoms at five high-symmetry sites and the migration activation energies along the migration pathway on the CeO₂ (111) surface were calculated. Results show that the most stable adsorption sites of the Ce, O, and F atoms were the O_h, Ce_bri, and Ce_t sites, respectively. The Ce atom migrated from the O_h to the O_t site. The O atom migrated from the Ce_bri to the O_bri site. The F atom migrated from the Ce_t to the O_h site. The migration activation energies of the Ce, O, and F atoms along the migration pathways were 1.526, 0.597, and 0.263 eV, respectively. The F adatom does not change the spatial configuration of the Ce and the O atoms. When the O vacancy occurs on the CeO₂ (111) surface, the F adatom can make up for the O vacancy defect.     

First principles analysis of H2O adsorption on the (110) surfaces of SnO2, TiO2 and their solid solutions

Both associative and dissociative H(2)O adsorption on SnO(2)(110), TiO(2)(110), and Ti-enriched Sn(1-x)Ti(x)O(2)(110) surfaces have been investigated at low ((1)/(12) monolayer (ML)) and high coverage (1 ML) by density functional theory calculations using the Gaussian and plane waves formalism. The use of a large supercell allowed the simulation at low symmetry levels. On SnO(2)(110), dissociative adsorption was favored at all coverages and was accompanied by stable associative H(2)O configurations. Increasing the coverage from (1)/(12) to 1 ML stabilized the (associatively or dissociatively) adsorbed H(2)O on SnO(2)(110) because of the formation of intermolecular H bonds. In contrast, on TiO(2)(110), the adsorption of isolated H(2)O groups ((1)/(12) ML) was more stable than at high coverage, and the favored adsorption changed from dissociative to associative with increasing coverage. For dissociative H(2)O adsorption on Ti-enriched Sn(1-x)Ti(x)O(2)(110) surfaces with Ti atoms preferably located on 6-fold-coordinated surface sites, the analysis of the Wannier centers showed a polarization of electrons surrounding bridging O atoms that were bound simultaneously to 6-fold-coordinated Sn and Ti surface atoms. This polarization suggested the formation of an additional bond between the 6-fold-coordinated Ti(6c) and bridging O atoms that had to be broken upon H(2)O adsorption. As a result, the H(2)O adsorption energy initially decreased, with increasing surface Ti content reaching a minimum at 25% Ti for (1)/(12) ML. This behavior was even more accentuated at high H(2)O coverage (1 ML) with the adsorption energy decreasing rapidly from 145.2 to 101.6 kJ/mol with the surface Ti content increasing from 0 to 33%. A global minimum of binding energies at both low and high coverage was found between 25 and 33% surface Ti content, which may explain the minimal cross-sensitivity to humidity previously reported for Sn(1-x)Ti(x)O(2) gas sensors. Above 12.5% surface Ti content, the binding energy decreased with increasing coverage, suggesting that the partial desorption of H(2)O is facilitated at a high fractional coverage.