Li2K(IO3)3与Li2NH4(IO3)3的晶体结构

本文用X射线粉末法测定了Li₂K(IO₃)₃与Li₂NH₄(IO₃)₃的晶体结构和原子参数。发现Li₃K(IO₃)₃,Li₂NH₄(IO₃)₃与Li₂Rb(IO₃)₃同晶型,属单斜晶系,空间群为P2₁/α,每个单胞含有四个化合式量。室温的点阵常数分别为α=11.198?,b=11.046?,c=8.254?,β=111.53°,及α=11.327?,b=11.078?,c=8.341?,β=111.87°。讨论了二元化合物的形成与离子半径的关系。 关键词：     

Eu3+/Dy3+共掺Sr3Y2(BO3)4荧光粉的发光性质研究

稀土掺杂发光材料一直是科研领域研究的热点,被广泛应用于白光LED、温度传感、显示显像、新能源和激光等领域。基质的结构对于稀土离子光致发光特性有非常重要的影响,在众多发光基质材料中,硼酸盐具有透光范围宽、光学损伤阈值高、较好的热稳定性和化学稳定性等优点。碱土-稀土金属硼酸盐Sr₃Y₂(BO₃)₄具有出色的光学性能,对其发光性能的研究具有重要意义。稀土离子Eu³⁺具4f⁶电子层,是一种典型的下转换发光中心离子,常被选作红色发光材料的激活剂。Dy³⁺具4f⁹电子层,也是一种典型的下转换发光中心离子,在紫外光激发下,在蓝色光区和橙色光区有较强的荧光发射。采用高温固相法合成了Sr₃Y₂(BO₃)₄∶Eu³⁺/Dy³⁺荧光粉,通过XRD和SEM对样品的结构和形貌进行了表征,XRD结果表明,1 0...     

真空紫外光激发下Ce3+、Tb3+激活的BaCa2(BO3)2的发光性质

利用XRD、VUV及UV光谱等方法对Ce³⁺、Tb³⁺离子掺杂以及Ce³⁺、Tb³⁺离子共掺的3种BaCa₂(BO₃)₂荧光粉的相纯度、发光性质、浓度猝灭现象进行研究。结果表明:3种荧光粉在VUV波段有较好的吸收,基质吸收带位于140～190 nm范围。Ce³⁺在BaCa₂(BO₃)₂的最低4f5d跃迁带位置在360 nm附近,其5d→²F_J(J=5/2, 7/2)发射峰分别位于393,424 nm。Tb³⁺掺杂的样品在172 nm激发下的发射光谱由4个窄带组成,分别对应⁵D₄→⁷F_J(J=3,4,5,6)的跃迁,其中占主导位置的是⁵D₄→⁷F₅的跃迁,大约位于543 nm处,主要为绿光发射。在Ce³⁺,Tb³⁺离子共掺杂的BaCa₂(BO₃)₂光谱中,观察到Ce³⁺-Tb³⁺离子间有能量传递。     

Li2B4O7晶体及其熔体结构的拉曼光谱研究

采用高温原位拉曼光谱技术,研究了Li₂B₄O₇从常温至1 373 K温度范围内的拉曼光谱。在升温过程中,晶体的拉曼光谱出现展宽和红移现象,且强度降低。晶体熔化时,由2个[BO₄]和2个[BO₃]组成的[B₄O₉]环状结构转变成(B₃O₆)3- 六元环和[BO₃]结构,[BO₄]结构减少直至消失。基于密度泛函理论,计算了Li₂B₄O₇晶体的拉曼光谱,对其振动模式进行了分析归属。利用量子化学从头计算法计算了由[B₃O₆-BO₃]为基础相互连接形成的x(Li₂B₄O₇)(x=2, 3, …, 9)的环状团簇模型的拉曼光谱,对Li₂B₄O₇熔体的结构进行了模拟分析。计算结果表明Li₂B₄O₇熔体的阴离子基元为三个(B₃O₆-BO₃)组成的大三元环超级结构。     

Ca3La(BO3)3：Tb3+的合成与发光性质

高温固相反应法合成了Ca₃La(BO₃)₃:Tb³⁺光致发光材料。利用扫描电镜和激光衍射分析仪测定了样品的晶粒形貌及粒径大小分布,利用荧光分光光度计研究了Ca₃La(BO₃)₃:Tb³⁺的光致发光特性。确定了在Ca₃La(BO₃)₃基质中Tb³⁺离子浓度对其发光强度的影响及其自身浓度猝灭机理;探讨了助熔剂Li₂CO₃、敏化剂Ce³⁺离子的加入对荧光粉发光强度的影响。     

一种LED用红色荧光粉BaZn2(BO3)2：Eu3+的合成与发光性能研究

通过高温固相法制得双峰可调节本征半导体发光BaZn₂（BO₃）₂：Eu³⁺荧光粉,此类荧光粉在300~400 nm的紫外波段有很强的吸收。在375 nm的紫外光激发下,该荧光粉产生了两个宽带的发射峰,分别位于550 nm和615 nm处。并且,在395 nm的紫光激发下,荧光粉会由于Eu³⁺离子的⁵D₀→⁷F₂电偶极跃迁产生一个位于615 nm的强宽发射峰,这表明Eu³⁺离子占据了反演对称中心的位置,取代了BaZn₂（BO₃）₂中部分的Ba²⁺离子。当Eu³⁺的摩尔分数达到10%时,发生浓度猝灭。在不同浓度的Eu³⁺离子的掺杂下,BaZn₂（BO₃）₂：Eu³⁺荧光粉的发光从黄色延伸到红色,实现了荧光粉的色度可调。     

Measurement of electro-optic coefficients of low-symmetry crystal YbCa4O(Bo3)3

In this paper, we report on all the electro-optic coefficients of the low-symmetry crystal YbCa₄O(BO₃)₃ measured by the interferometric method. The new sample orientations, which have not been reported so far, have been used for measuring the skew electro-optic coefficients γ₅₁, γ₅₃, γ₄₂ and γ₆₂ independently. The results obtained are γ₁₁=0.6, γ₂₁=0.4, γ₃₁=0.3, γ₁₃=0.3, γ₂₃=0.2, γ₃₃=2.2, γ₅₁=0.9, γ₅₃=4.1, γ₄₂=0.8 and γ₆₂=0.4×10⁻¹² m/V.     

Measurement of electro-optic coefficients of low symmetry crystal GdCa4O(BO3)3

In this paper, we report all of the electro-optic coefficients of the low symmetry crystal GdCa₄O(BO₃)₃ measured by the interferometric method. The new sample orientations, which have not been reported so far, have been used for measuring the skew electro-optic coefficients γ₅₁, γ₅₃, γ₄₂ and γ₆₂ independently. The results obtained are γ₁₁=0.4, γ₂₁=0.5, γ₃₁=0.6, γ₁₃=0.1, γ₂₃=0.4, γ₃₃=2.0, γ₅₁=0.7, γ₅₃=1.5, γ₄₂=0.5, γ₆₂=0.8×10⁻¹²m/V.     

Energy storage in Ce-doped LiCaAlF6 and LiSrAlF6 crystals

Absorption, emission and thermoluminescence (TL) of as-grown and X-irradiated pure and Ce-doped LiCaAlF₆ (LiCAF) and LiSrAlF₆ (LiSAF) crystals have been analyzed. It is shown that the energy storage is defined by the dissimilarity of basic matrix properties, intrinsic defect structure, preferred Ce³⁺ ion disposition and charge compensation defect type. This is the reason of higher colorability and TL efficiency of as-grown Ce:LiSAF compared to Ce:LiCAF. Pre-filling of ultra-deep traps leads to enormous increases in the TL response. Due to these properties Ce:LiSAF and Ce:LiCAF are promising thermoluminescent dosimetric materials.     

Spectroscopy, laser operation at 1.3 μm and self-frequency doubling in GdAl3(BO3)4: Nd

We report for the first time the spectroscopy and the laser operation of GdAl₃(BO₃)₄: Nd³⁺ (NGAB) near 1338 nm corresponding to the ⁴F_3/2→⁴I_13/2 channel. Their features have been found favorable for self-frequency doubling in order to generate a red radiation at 669 nm and more generally for self-frequency conversions. The emission cross-section in σ-polarization was estimated to be 5.5×10⁻²⁰ cm². We demonstrated self-frequency doubling despite of non-optimal experimental conditions.     

Effect of γ-radiation on the phase transition temperature of Li0.5(NH4)0.5SO4

Polycrystalline lithium-ammonium sulphate samples were subjected to X-ray diffraction analysis for determining the lattice parameters of the prepared mixed crystals. The compositions of the samples were determined using X-ray microanalysis.

The Li_0.5(NH₄)_0.5SO₄ samples were irradiated with different doses of γ-radiation in order to investigate the effect of this ionizing radiation on the phase transition temperatures T_c1 and T_c2. The temperature dependence of the d.c. resistivity ρ_d.c. and dielectric constant of irradiated samples showed (i) a shift of T_c1 to higher temperatures; (ii) a shift of T_c2 to lower temperatures; and (iii) the appearance of a new anomaly near 128°C at moderately high γ-doses. The mechanisms giving rise to this behaviour are discussed.     

The 3ν3 overtone bands of UF6 and UF6

The absorption specta of CO laser radiation by 3ν₃ overtone bands of ²³⁸UF₆ and ²³⁵UF₆ has been measured using photoacoustic spectroscopic techniques. For the two temperatures 250 K and 290 K, measured absorption coefficients and cross-sections of the 3ν₃ band of ²³⁵UF₆ are reported for the first time.     

Investigation on intracavity second-harmonic generation of a new Li-doped GdCa4O(BO3)3 crystal

Efficient intracavity second-harmonic generation (SHG) has been realized in a new Li-doped GdCa₄O(BO₃)₃ (GdCOB) crystal. 2.55 W CW SHG output power was obtained with an optical conversion efficiency of 19.6%, while the effective intracavity SHG efficiency was determined to be 44%. Compared to that of undoped GdCOB crystal, the effective SHG efficiency of the Li-doped GdCOB crystal was found to increase by 12.5%.     

CaTiO3基微波介质陶瓷的频率温度稳定性

通过对克劳修斯-莫索蒂方程的近似, 分析了钙钛矿结构微波介质陶瓷频率温度系数 (τ_f) 的主要影响因素, 发现改变材料介电响应中离子位移极化和电子位移极化的比例, 可调节频率温度系数的正负与大小. 通过电子结构计算和容忍因子分析, 预测引入(Zn_1/3Nb_2/3)⁴⁺对具有正温度系数 的CaTiO₃进行B位取代将提高材料电子极化响应比例, 调节τ_f由正变负. 采用偏铌酸盐为前驱体, 通过固相反应法合成了Ca[(Zn_1/3Nb_2/3)_xTi_(1-x)]O₃钙钛矿结构陶瓷, 并对其进行结构分析和性能测试, 实验结果与理论分析一致, 获得了具有近零频率温度系数的Ca[(Zn_1/3Nb_2/3)_0.7Ti_0.3]O₃介质陶瓷材料. 关键词： B位复合钙钛矿陶瓷 谐振频率温度稳定性 极化机理 6八面体倾斜')" href="#">BO₆八面体倾斜     

Synthesis and superconductivity of (Pb0.5Cd0.5)(Sr0.9R0.1)2(R′0.7Ce0.3)2Cu2Oy

New Pb based layered superconducting cuprates (Pb_0.5Cd_0.5)(Sr_0.9R_0.1)₂(R′_0.7Ce_0.3)₂Cu₂O_y with (R,R′) = (Eu,Gd), (Eu,Dy) and (Nd,Gd), have been successfully synthesized. The structure of (Pb,Cd)(Sr,Eu)₂(Gd,Ce)₂Cu₂O_y is determined using XRD data. The X-ray powder diffraction pattern can be indexed by the tetragonal structure with lattice parameters a = 3.8250 Å, C = 29.2235 Å and a space group of I4/mmm. The effects of synthesis conditions on (Pb,Cd)(Sr,Eu)₂(Gd,Ce)₂Cu₂O_y are studied and a T_c(onset) of 26 K is obtained by resistance measurements. It is isostructural to the superconductor (Pb,Cu)(Sr,Eu)₂(Eu,Ce)₂Cu₂O_y.     

Bi2ZnOB2O6单晶偏振拉曼光谱

本文通过分析不同几何配置下的偏振拉曼光谱对非线性光学晶体的晶格振动模式进行了研究. 首先根据因子群分析,将晶体的振动模按晶体对称群的不可约表示进行分类,其次测量了晶体在10–1600 cm^-1范围内,不同几何配置下的偏振拉曼光谱,并在此基础上指认了晶体的晶格振动模式. 300 cm^-1以下的振动峰,归结为晶体的外振动,来自[BiO₆],[ZnO₄],[BO₄]和[BO₃]原子基团的平动和转动;300cm^-1以上为晶体的内振动,主要与Bi-O,和Zn-O键振动有关. 晶体拉曼光谱中最高振动频率达到1407 cm^-1,被指认为[BO₃]三角形中B-O键的伸缩振动,体现了[BO₃]基团中高的电子非局域化程度. 关键词： 2ZnOB₂O₆单晶')" href="#">Bi₂ZnOB₂O₆单晶 偏振拉曼光谱 振动模式     

Growth and laser properties of Nd:Ca4YO(BO3)3 crystal

Nd:Ca₄YO(BO₃)₃ (Nd:YCOB) crystal was grown by the Czochralski method, and its structure was measured by using a four circle X-ray diffractometer. The transparent spectrum from 200 to 2600 nm was measured at room temperature. The fluorescence spectrum near 1.06 μm showed that the main emission wavelength of Nd:YCOB crystal was centered at 1060.8 nm. Laser output at 1.06 μm has been demonstrated when it was pumped by a Ti:sapphire laser at the wavelength of 794 nm, the highest output power was 68 mW under pumping power of 311 mW, the pumping threshold was 163 mW and slope efficiency was 46.9%. The self-frequency doubled green light has been observed when it was pumped by a Ti:sapphire or a laser diode (LD). A 14.5 mm Nd:YCOB crystal sample cut at (θ, φ)=(90°, 33°) was used for type I second-frequency generation (SHG) of the 1.06 μm laser pulse. The SHG conversion efficiency was 22%.     

Crystal structure and phase transitions of [(C2H5)4N]6Bi8Cl30

A new [(C₂H₅)₄N]₆Bi₈Cl₃₀ crystal of the family of alkylammonium halogenobismuthates was grown. X-ray diffraction studies showed that the crystals are monoclinic, space group C2/m with a = 20.117(5), b = 12.682(3), c = 20.396(5) Å, β = 93.03(3), Z =2. The lattice consists of (C₂H₅)₄N⁺ cations and a new type of Bi₈Cl⁶⁻₃₀ anion. Dielectric studies revealed two closely-lying structural phase transitions around 241 K (on cooling). They were interpreted as due to a freezing of the rotational motions of tetraethylammonium cations.     

Gd3(Al,Ga)5O12:Ce闪烁晶体缺陷对其发光性能的影响

新型闪烁晶体Gd₃(Al,Ga)₅O₁₂:Ce(GAGG:Ce)在制备过程中易出现包裹体及反格位缺陷等问题,严重影响晶体的性能.为了抑制这些缺陷以得到大尺寸高质量的GAGG:Ce晶体,本文以Gd₃(Al,Ga)₅O₁₂为基质、Ce3+为掺杂离子,采用提拉法生长得到了GAGG:Ce晶体,并对不同晶体部位的物相结构、微区成分、透光性质、发光及时间性能进行了测试和对比分析.结果表明,GAGG:Ce晶体的透过谱中存在340和440 nm两处Ce³⁺特征吸收带,且位于550 nm处的直线透过率为82%.晶体尾部因杂相包裹体等宏观缺陷的影响,导致其透过率下降至70%左右.微区成分分析进一步表明GAGG:Ce晶体中存在三种类型的包裹体,分别为富Gd相、富Ce相及(Al,Ga)₂O₃相.GAGG:Ce晶体的X射线激发发射谱中在550 nm附近存在Ce³⁺宽发射带,且380 nm处还存在GdAl/Ga反格位缺陷引起的发射.晶体中存在的杂相包裹体及GdAl/Ga反格位缺陷等因素导致Ce³⁺在GAGG基质的发光强度下降12.5%;GdAl/Ga反格位离子与近邻Ce的隧穿效应使得GAGG:Ce晶体的衰减时间由117.7 ns延长至121.9 ns,且慢分量比例由16%增加至17.2%.     

K5Bi0.9Er0.1(MoO4)4的晶体生长和光学性质

在化学计量的熔料里,用提拉法生长了K₅Bi_0.9Er_0.1(MoO₄)₄单晶。该晶体属于三方晶系,空间群为R3m,z=1.5,晶胞参数为a=6.029?,c=20.823?(六方表示)。晶体具有层状结构,沿着(0001)面容易解理。晶体在室温下的吸收光谱包括有若干条吸收带,它们是稀土离子所特有的。其中三个主要的吸收峰分别相当于从Er³⁺离子的基态 ⁴I_15/2向 ⁴G_11/2, ²H_11/2和 ⁴I_13/2能级的跃迁。本文还给出晶体中相当于 ⁴I_13/2→ ⁴I_15/2跃迁的荧光发射光谱。 关键词：