Structural,morphological and optical studies on chemically deposited nanocrystalline CdZnSe thin films

In the present paper, cadmium zinc selenide (Cd_0.5Zn_0.5Se) thin films were deposited on glass substrates by chemical bath deposition with optimized deposition parameters. 2-mercaptoethanol was used as a capping agent. The as-deposited thin films were annealed at 300, 500 and 700 °C and then subjected to various structural, morphological and optical investigations. The effect of the presence of capping agent and annealing on these properties was discussed. The phenomenon of phase transformation occurred during annealing. The optical band gap energies were found in the range 2.37–1.7 eV with respect to the annealing temperatures.     

Effect of the cadmium ion source on the structural and optical properties of chemical bath deposited CdS thin films

The chemical bath deposition (CBD) technique has been successfully used to deposit cadmium sulphide from cadmium chloride and cadmium acetate as the cadmium ion source and thiourea as the sulphur source on both glass microscope slide and indium tin oxide coated glass substrates. Various properties of the films such as surface morphology, crystallinity, optical properties and resistivitiy have been investigated. XRD patterns reveal that the CdS films deposited from cadmium chloride have an hexagonal structure. Their preferential orientation changes from (002) to (100) with the thermal annealing. Films deposited from cadmium acetate are amorphous but improve their crystallinity with annealing. SEM analysis shows that the grains of the as deposited films are randomly shaped and appear to be bigger in the case of the CdS prepared from cadmium chloride. The optical transmission of the layers are in the 70–80 % range for wavelength above the band gap absorption which makes them more appropriate as window material in heterojunction solar cells.     

Electrochemical activity of chemically deposited polypyrrole films

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Optimization of the synthesis and characterizations of chemical bath deposited Cu2S thin films

Semiconducting copper sulphide (Cu₂S) thin films have been deposited on various substrates (SnO₂:F/glass, glass) by the simple and economical chemical bath deposition technique. The depositions were carried out during a deposition time of about 32.5 min in the pH range of 9.4 to 11. The synthesized Cu₂S thin films were characterized using various techniques without any annealing treatment. X-ray diffraction study shows that Cu₂S films exhibit the best crystallinity for pH = 10.2. For this pH value, Auger electron spectroscopy investigations show that Cu₂S thin films grown on an SnO₂/glass substrate exhibit stochiometric composition with [Cu]/[S] concentrations ratio equal to 2.02. Using the Kelvin method, the work function difference (Ф_material– Ф_probe) for the Cu₂S films deposited on SnO₂/glass substrates at the optimum pH value was found to be equal to 145 meV. Hall measurements confirm the p-type electrical conductivity of the obtained films. The electrical resistivity was of the order of 3.85 × 10⁻⁴ Ω-cm. The transmission and reflection coefficients vary in the range of [35–60] % and [5–15] % respectively, in the visible range, and the band gap energy is about 2.37 eV.     

Effect of deposition temperature on the growth mechanism of chemically prepared CZTGeS thin films

The Cu₂ZnSnGeS₄ (CZTGeS) thin films were deposited by the spray pyrolysis method at different substrate temperatures without further sulfurization. The influence of various deposition temperatures on the surface morphology, microstructure, optical properties, chemical, and phase composition were investigated. The substitution mechanism of Sn/Ge in the crystal lattice of CZTGeS depending on deposition temperatures was studied. It was shown that a variation in substrate temperature has a strong effect on the surface morphology of the films. The X-ray diffractometer (XRD), transmission electron microscope (TEM), and Raman spectroscopy (RS) analysis showed that CZTGeS films were polycrystalline with a kesterite-type single-phase structure and a preferential orientation of (112). The RS-mapping analysis showed the distribution of intensities on the surfaces of the films. Optical measurements showed that CZTGeS films are highly absorbing in the visible region, and the optical band gap is shifted from 1.89 to 1.84 eV.     

Size-dependent photocurrent switching in chemical bath deposited CdSe quantum dot films

Journal of Solid State Electrochemistry - Size-dependent photocurrent switching has been investigated in chemical bath deposited CdSe quantum dot (QD) films with band gaps 2.26, 2.09, and...     

Effect of pH on the properties of nanocrystalline CuO thin films deposited by sol-gel process

Nanocrystalline cupric oxide thin films were prepared using the sol-gel method. Three sols with different pH were performed in order to evaluate the pH effect on the morphology and optical properties of the films. XRD pattern confirmed the nanocrystalline monoclinic CuO phase formation. The influences of pH on surface morphology of films were investigated by scanning electron microscopy (SEM). It was observed that grains size increases by increasing the pH of the sol. UV-Vis spectrum measurement showed low transparency of the films in the visible region. Optical constants such as extinction coefficient, refractive index and optical band gap were evaluated from these spectra by using the Pointwise Unconstrained Minimization Approach (PUMA). The band gap of the films varies from 2.20 to 1.98 eV for various pH of sol.     

Pyrrole thin films deposited on paper by pulsed RF plasma

Attempts were made to plasma deposit an oriented π-conjugated polymer of pyrrole (Py) on paper surfaces in order to produce electrically conductive layers. The N/C atomic ratio of 0.13–0.24 was observed for all treatment conditions. This implies the nature of the deposition formed on the paper surface via pulsed plasma is different from that of pyrrole monomer. An increase in conductivity of all pyrrole-plasma treated papers was observed. The 50 W RF-power with 5 min plasma exposed paper sample shows 8.15 × 10⁻⁹ S·cm⁻¹ conductivity. The conductivity measurements indicated a plasma-enhanced ring-opening reaction mechanism of pyrrole.      

Guided self-assembly of diblock copolymer thin films on chemically patterned substrates

We study the guided self-assembly of symmetric/asymmetric diblock copolymer (BCP) films on heterogeneous substrates with chemically patterned surface by using a coarse-grained phase-separation model. During the procedure, the free energy employed for the BCP films was modeled by the Ginzburg-Landau free energy with nonlocal interaction, and the flat, chemically patterned surface was considered as a heterogeneous surface with short-range interaction with the BCP molecules. The resulting Cahn-Hilliard equation was solved by means of an efficient semi-implicit Fourier-spectral algorithm. Effects of pattern scale, surface chemical potential, and BCP asymmetry on the self-assembly process were explored in detail and compared with those without chemically patterned substrate surfaces. It was found that the morphology of both symmetric and asymmetric BCP films is strongly influenced by the commensurability between the unconstrained natural period lambda* of the bulk BCP and the artificial pattern period. Simulation shows that patterned surface with period close to lambda* leads to highly ordered morphology after self-assembly for both symmetric and asymmetric BCP films, and it also dramatically accelerates the guided self-assembly process. The present simulation is in a very good agreement with the recent experimental observation in BCP nanolithography. Finally, the present study also expects an innovative nanomanufacturing method to produce highly ordered nanodots based on the guided self-assembly of asymmetric BCP films on chemically patterned substrates.     

Positive-tone nanopatterning of chemical vapor deposited polyacrylic thin films

Terpolymers of methyl alpha-chloroacrylate (MCA), methacrylic acid (MAA), and methacrylic anhydride (MAH) were synthesized by initiated chemical vapor deposition (iCVD) of MCA and MAA followed by low-temperature annealing that partially converts MAA into MAH. The MAA composition in the iCVD copolymer can be systematically varied between 37 and 85 mol % by adjusting the gas feed fractions of monomers. Study of the monomer reactivity ratios and the copolymer molecular weights supports the hypothesis of a surface propagation mechanism during the iCVD copolymerization. The carboxylic dehydration reaction at the annealing temperature of 160 degrees C is dominated by a mechanism of intramolecular cyclization, resulting in intramolecular MAH anhydride formation while preventing crosslink formation. The incorporation of highly electron-withdrawing anhydride functionality enhances chain scission susceptibility under electron-beam irradiation. P(MCA-MAA-MAH) terpolymer thin films can be completely developed at dosages as low as 20 microC/cm2 at 50 kV. High-quality positive-tone patterns were created with 60 nm feature size achieved in the vapor deposited films.     

An improved method for chemical bath deposition of ZnS thin films

ZnS thin films were prepared by an improved chemical bath deposition method, which the substrates were preheated before being mounted in the reaction solution. X-ray diffraction (XRD) and energy dispersive spectrometer (EDS) reveals that thin film ZnS has a cubic structure and the typical composition ratio of Zn/S is 52:48. Scanning electron microscopy (SEM) characterization shows that the surface of the sample is compact and uniform. The transmission spectrum indicates a good transmission characteristic with an average transmittance of 82.2% in the spectra range from 350 nm to 800 nm and the optical band gap is about 3.76 eV.     

Study of electrochemically deposited thin poly(N-vinylcarbazole) films

In this paper, the influence of the water content in the acetonitrile/LiClO(4) system on the electrosynthesis and the properties of poly(N-vinylcarbazole), PNVC, films is examined. By using conventional resonant frequency and impedance measurements of an electrochemical quartz crystal microbalance (EQCM), information about the electrochemical, morphological and adhesive properties of the thin conducting films were obtained. By changing the water content of the background electrolyte, the degree of cross-linking (through the vinyl group), the doping level and the morphology of PNVC films vary simultaneously. Two limiting cases of film properties were observed: for less than 10 Vol.% water, a highly doped, porous and cross-linked polymer is synthesized. Above 10 Vol.% water content, a dense and smooth film is deposited. The growth at a constant potential was found to be limited by the diffusion of monomers to the electrode. Films grown from a system containing 20 Vol.% water exhibit better adhesive properties to the substrate than those grown from 2 Vol.% water.     

Theoretical and experimental analyses of the deposited silver thin films

The silver thin films have been prepared using magnetron DC‐sputtering. We discuss in detail the thin films AFM images and their properties in different sputtering times of 2 to 6 minutes. Despite the low thickness of the films, the roughness saturation amounts, W_s, are well separated. The surface data do not follow the normal Family‐Vicsek scaling, and we have the local growth exponent, β(W_s(t)∼t^β). We obtained the global roughness scaling exponent α=0.36 and growth exponent, β=0.50. We also obtain the fractal spectrum of the data, f(α). The results show that the spectrum is right‐hook like. It distinguishes between different film thicknesses even in small sizes of hundreds of nanometers. Furthermore, we measure the surface conductivities and compare them to the thin film roughnesses. We investigate the roughness and fractality of the AFM data, looking for their relations to width and conductivity of the silver thin film samples.     

Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.     

Nanoscale measurements of conducting domains and current-voltage characteristics of chemically deposited polyaniline films

Spatial variations in electric conductivity and evolutions of band structures of polyaniline (PANI) films have been studied by use of a so-called current-sensing atomic force microscope (CS-AFM) or atomic force microscope current image tunneling spectroscopy (AFM-CITS). PANI films were deposited chemically onto indium-tin oxide- (ITO-) glass substrates, and their thickness and doping levels were controlled by polymerization and acid-doping conditions. The conducting uniformity of the PANI films depends on their doping level and thickness. Conducting domains were observed in fully doped PANI film, even when the bias voltage was reduced to as small as 30 mV. High current flowing regions gradually disappeared when conducting PANI films were partially dedoped. The point-contact current-voltage (I-V) characteristics of conducting tip-polymer/ITO systems were investigated on PANI films with different thickness and degree of doping. Various types of I-V curves representing metallic, semiconducting, and insulating states were obtained depending on the aggregation of polymer chains and doping level of the polymer film. The band gap energies (estimated from the I-V or dI/dV-V curves) of emeraldine base (EB) (undoped polyaniline) films are all higher than 3.8 eV, and a wide distribution of the band gap energies (0-1.1 eV and 0.75-1.8 eV for fully and partially doped PANI thin films, respectively) was found in a single polymer film.     

Electron and X-ray diffraction studies of chemically deposited thin films of cadmium selenide following reaction with mercury(II) chloride solution

The reaction between thin films of CdSe and aqueous HgCl₂ was studied using electron diffraction (ED) powder X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). It was found that α-Hg₃Se₂Cl₂ is formed in the CdSe film following its reaction with 0.01 M HgCl₂ for a period of 5 minutes. Upon completion of the reaction of CdSe powder with 0.01 M HgCl₂, Hg₂Cl₂ is present in addition to α-Hg₃Se₂Cl₂ in a molar ratio of 1:3.1. The effect of air annealing on CdSe powder was also studied. Heating in air to 450°C for 1 hour resulted in an XRD pattern corresponding to the hexagonal form of CdSe.