含氮-空位缺陷锯齿状石墨烯纳米条带中负微分电阻和自旋过滤效应

采用第一性原理和非平衡格林函数方法,系统研究了含氮空位缺陷锯齿状石墨烯纳米条带的自旋极化输运特性．理论计算结果表明边界非对称的这类石墨纳米条带的基态具有铁磁性,由其构建的分子结中负微分电阻效应具有鲁棒性,是电极局域的态密度及依赖偏压的散射区-电极耦合作用结果．此外,在特定偏压区域还观察到几乎完美的自旋过滤效应．     

分子旋转对分子器件电子输运性质的影响

利用基于非平衡格林函数和密度泛函理论相结合的第一性原理计算方法,研究了一种可旋转分子跨接在金电极上的电子输运性质。计算结果表明:分子中的转子与定子间的旋转角度可以有效调控分子器件的电子输运性质。当夹角从30°变化到150°,分子器件的导电性呈现出增强、减弱的震荡变化。此外,当夹角变化到90°,分子器件的电流电压曲线打破其他角度呈现的线性变化特性,其电流值在2.4 V以后随着电压的增大而减小,表现出强烈的负微分电阻效应。     

碱金属原子掺杂BDC60分子中整流特性第一性原理研究

利用第一性密度泛函理论和非平衡格林函数相结合的方法,研究了碱金属原子掺杂对BDC60分子电子输运性质的影响.计算结果表明,在极低偏压下碱金属掺杂的BDC60分子能够表现出非常优良的整流性能,同时也展示出显著的负微分电阻行为.根据透射谱和前线分子轨道及其空间分布随外加偏压的变化等方面的分析,系统地讨论了整流以及负微分电阻行为产生的内在机理.我们的研究有助于BDC60分子在未来低偏压整流和负微分电阻分子器件中的应用.     

O/N替代掺杂对zigzag型硼氮窄纳米带能带及输运特性的影响

用第一性原理非平衡格林函数方法研究了O原子掺杂zigzag型硼氮窄纳米带(z-BNNNRs)的能带结构和电子输运特性.研究结果表明:O原子对N原子的替代掺杂使z-BNNNRs的能带结构出现明显变化,体系由半导体转变为金属;O掺杂明显地改变了z-BNNNRs体系的导电性能,在一定的偏压范围内产生明显的负微分电阻(NDR)现象,边缘掺杂比中间掺杂产生更大的负微分电导,进一步的输运性质计算给出的透射谱也印证了这一点.随着掺杂浓度的增加,负微分电导的极值也随之增大.     

碱金属原子掺杂BDC60分子中整流特性第一性原理研究

利用第一性密度泛函理论和非平衡格林函数相结合的方法,研究了碱金属原子掺杂对BDC60 分子电子输运性质的影响. 计算结果表明,在极低偏压下碱金属掺杂的BDC60分子能够表现出非常优良的整流性能,同时也展示出显著的负微分电阻行为. 根据透射谱和前线分子轨道及其空间分布随外加偏压的变化等方面的分析,系统地讨论了整流以及负微分电阻行为产生的内在机理. 我们的研究有助于BDC60 分子在未来低偏压整流和负微分电阻分子器件中的应用.     

纳米CeO2修饰碳糊电极微分脉冲伏安法对盐酸克伦特罗的测定

研究了盐酸克伦特罗(CLB)在纳米CeO2修饰碳糊电极上的电化学行为.结果表明:在0.10 mol·L-1的HClO4溶液中,CLB于+0.40 V(vs SCE)左右处产生1对准可逆的氧化还原峰.与裸碳糊电极相比,CLB在修饰电极上的电流响应明显增大,据此建立了尿样中CLB的微分脉冲伏安测定方法.线性范围为5.0×10-9 ～6.0×10-6 mol·L-1(r=0.998 2,n=7),检出限为2.5×10-9 mol·L-1(3sb),加标回收率为96% ～104%.     

基于Au@PPy核壳结构纳米粒子自组装阵列的可程序化负微分电阻效应研究

<正>随着信息技术的快速发展,亟需探索新型器件来满足当前及未来人们的需求1,2。在电子器件中非常重要的物理现象之一—负微分电阻效应,其在逻辑门3、模拟数字转换4、高频率振荡5、记忆存储和快速转换6等领域中具有巨大的应用前景。负微分电阻效应现象经常出现在金属-氧化物-半导体器件或者半导体器件中。目前,一些科研工作者在基于导电聚合物与金属纳米粒子复合器件中     

CO分子结点电子结构和输运性质的第一原理研究

采用基于密度泛函理论(DFT)的非平衡态格林函数方法(NEGF), 计算了CO分子结点低偏压下的电流和电导. 通过系统透射谱、投影态密度(PDOS)以及分子自洽投影哈密顿量(MPSH)本征态的分析将透射通道与局域分子轨道联系起来, 从系统电子结构解释了其传输性质. 讨论了电荷转移对系统电导的影响.     

纳米sno2负极的电化学性质

锂离子电池;纳米sno2负极;慢扫描循环伏安;交流阻抗谱     

α-MnO2负载纳米Au催化剂低温催化氧化CO和苯的性能

以尿素为沉淀剂用沉积-沉淀法制备了α-MnO2负载Au催化剂xAu/α-MnO2(x=0-7(对应的Au负载量(质量分数)分别为0-7%)),使用X射线粉末衍射(XRD)、N2-吸附/脱附、透射电镜(TEM)、X射线光电子能谱(XPS)和H2-程序升温还原(H2-TPR)等技术对所制样品进行了表征,并测定其对CO和苯的催化氧化性能.XRD结果表明,负载Au对α-MnO2载体结构影响不大,随Au含量的增加,Au颗粒明显增大.N2-吸附/脱附和TEM结果表明,Au的加入对xAu/α-MnO2的比表面积、孔容和孔径等结构性能影响较小,表明Au分布在α-MnO2载体表面,未阻塞其孔道.XPS结果表明,随着Au负载量的增加,xAu/α-MnO2中的O2-/(O22-或O-)、Mn4+/Mn3+和Au3+/Au0的摩尔比在增加,表明其晶格氧、Mn4+和Au3+的浓度在增加.由于贵金属的溢氢作用,Au明显促进xAu/α-MnO2氧化还原能力,其中3Au/α-MnO2具有最高的氧化还原性.负载Au明显影响xAu/α-MnO2样品的催化活性,xAu/α-MnO2的催化性能与Au的分散性、氧化还原性能及表面氧物种的种类密切相关,其中3Au/α-MnO2显示出最佳活性,其催化氧化CO的T90=80°C,苯的T90=200°C.     

Strong Current-Polarization and Negative Differential Resistance in FeN3-Embedded Armchair Graphene Nanoribbons

Motivated by the recent advances of transition-metal-nitrogen-carbon (TM-N-C) materials in catalysis, we investigate the electronic structure and transport properties of FeN\begin{document}$_3$\end{document}-embedded armchair and zigzag graphene nanoribbons (FeN\begin{document}$_3$\end{document}@AGNRs, FeN\begin{document}$_3$\end{document}@ZGNRs) with different widths. The first-principles results indicate that the FeN\begin{document}$_3$\end{document} induces significant changes on the band structures of both ZGNRs and AGNRs, making the resultant systems quite different from the pristine ones and own room-temperature stable ferromagnetic (FM) ground states. While only FeN\begin{document}$_3$\end{document}@AGNRs possess a significant spin-dependent negative differential resistance (NDR) and a striking current polarization (nearly 100\%) behaviors, due to that FeN\begin{document}$_3$\end{document} introduces two isolated spin-down states, which contribute current with different performances when they couple with different frontier orbits. It is suggested that by embedding FeN\begin{document}$_3$\end{document} complexes, AGNRs can be used to build spin devices in spintronics.     

Well Oriented ZnO Nanorods Array: Negative Resistance and Optical Switching

Well‐oriented ZnO nanorods (NRs) arrays were grown on Si, alumina, quartz, and FTO substrates through a ZnO seed layer followed by low temperature wet chemical process. The influence of sputtered ZnO seed layer thickness (100, 50, 32, and 16 nm), annealing temperature and CuO_x coverage on the characteristics of ZnO NRs were investigated in this study. The crystalline structural, chemical, morphological, optical, and electrical properties of ZnO NRs arrays were studied by X‐ray diffraction (XRD), field emission‐ scanning electron microscopy equipped by energy dispersive X‐ray spectroscopy (FE‐SEM/EDX), Raman scattering, UV/Vis ‐ near IR absorption spectroscopy and current‐voltage characteristic. XRD and Raman spectra measurement revealed that the synthesize ZnO displayed hexagonal wurtzite structure. The individual rod diameter, density, and orientation can be controlled by varying the seed layer thickness. The mean diameter and maximum length of ZnO NRs are around 55–66 nm and 282 nm, respectively. ZnO NRs/ ZnO thin film structure shows optical switching and negative differential resistance behavior as applicable to ON/OFF gate and memory devices.     

Redox-mediated Negative Differential Resistance (NDR) Behavior in Perylenediimide Derivative: A Supramolecular Approach

Deaggregated perylenediimide (PDI) derivatives exhibit exceptionally high quantum yields, photostability and appropriate molecular features for organic electronics. This work demonstrates a metal–dye–metal framework with a large and stable negative differential resistance (NDR) at ambient conditions, built using a supramolecular strategy. The deaggregation achieved through the encapsulation of the bay-substituted phenyl groups of aggregated (l/d )-Phe-PDI dyes by the β-CD macrocyclic host is validated through detailed spectroscopic and imaging techniques. The host–guest interaction resulted in a dramatic enhancement in the emission yield from 0.28 to 0.90. In the thin film deposits, the β-CD/(l/d )-Phe-PDI complex displayed well-connected sheet-like morphology, whereas the uncomplexed (l/d )-Phe-PDI dye remained as scattered lumps. The large and reversible I–V characteristics displaying strong NDR behavior is attributed to the oxidation/reduction processes involving the rigid π-rich PDI core and is stable at least for about six months at ambient conditions, a promising system for organic electronics applications.     

Charge Transport Properties of Molecular Junctions Built from Dithiol Polyenes

We present a study of the charge transmission behavior of a series of dithiol polyenes in the context of molecular junctions. Using the Landauer theory and zero voltage approximation the Green’s functions of the inserted molecules are calculated from a fully ab initio wave function based procedure. Various possibilities in approximating the correlation space are explored and quantitatively evaluated. Our results show that the transmission behavior of a molecular junction is not a monotonic function of the length of the employed molecule. Moreover, we introduce the analytic solution of a suitable model system to countercheck the ab initio results and find a remarkable degree of correspondence.     

二维铁电材料ABP2X6内在极高的负泊松比

Recently, ferroelectric materials have attracted considerable research attention. In particular, two dimensional (2D) ferroelectric materials have been considered as most crucial for next-generation circuit designs because of their application as novel electric memory devices. However, a 2D ferroelectric material is very rare. The ferroelectric materials with the form ABP₂X₆ (A = Ag, Cu; B = Bi, In; X = S, Se) are of interest because of their ferroelectric property maintained in their ultrathin structures. Within the ABP₂X₆ monolayer, the P―P bonds form the pillars that hold the top and bottom X planes, while the off-center A―B atoms between the X layers induce a spontaneous ferroelectric polarization. If the two off-center A―B sites are equally aligned, this would lead to the appearance of the paraelectric state. Such intriguing structures must impart novel mechanical properties to the materials. Until now, there has been no report on the mechanical properties of monolayer ABP₂X₆. Based on first-principles calculations, we studied the structural, electronic, mechanical as well as the electromechanical coupling properties of monolayer ABP₂X₆ (A = Ag, Cu; B = Bi, In; X = S, Se). We found that they are all semiconductors with wide bandgaps of 2.73, 2.17, 3.00, and 2.31 eV for CuInP₂Se₆, CuBiP₂Se₆, AgBiP₂S₆, and AgBiP₂Se₆, respectively, which are calculated based on the Heyd-Scuseria-Ernzerhof (HSE) exchange correlation functional model. The conduction band minimum is mainly from p orbitals of X and B atoms, whereas the valence band maximum is due to the hybridization of the p orbital of X atoms and the d orbital of A atoms. Moreover, there are three short and three long A/B―X bonds due to the A―B off-center displacement. Together with the d-p orbital hybridization, the main reason for the distorted ferroelectric structure in ABP₂X₆ monolayers is the Jahn-Teller effect. ABP₂X₆ monolayers are predicted to be a new class of auxetic materials with an out-of-plane negative Poisson's ratio, i.e., the values of the negative Poisson's ratio are in the order AgBiP₂S₆ (−0.805) < AgBiP₂Se₆ (−0.778) < CuBiP₂Se₆ (−0.670) < CuInP₂S₆ (−0.060). This is mainly due to the tensile strain applied in the x/y direction enlarging the angle between P―P bonds and top layer X atoms, thereby enhancing the bucking height of monolayer ABP₂X₆. Moreover, external strain has a significant impact on the A―B off-center displacement, rendering an out-of-plane piezoelectric polarization. The values of e₁₃ for CuInP₂S₆, CuBiP₂Se₆, AgBiP₂S₆, AgBiP₂Se₆ monolayers are calculated to be −3.95 × 10⁻¹², −5.68 × 10⁻¹², −3.94 × 10⁻¹², −2.71 × 10⁻¹² C∙m⁻¹, respectively, which are comparable to the only experimentally confirmed 2D out-of-plane piezoelectric Janus system (piezoelectric coefficient = −3.8 × 10⁻¹² C∙m⁻¹). This unusual auxetic behavior, ferroelectric polarization, and the electromechanical coupling in monolayer ABP₂X₆ could potentially lead to enormous technologically important applications in nanoelectronics, nanomechanics, and piezoelectrics.     

Possibility of superconductivity in intercalation compound related to MgB2

We investigated the electronic structure of MgB₂ and intercalation compounds, MgBX (X = Li, Be, C), with fully relaxed crystal structure by using density functional theory. The compounds MgBLi and MgBBe could be similar two‐band superconductors to MgB₂ because the Fermi surface crosses σ and π bands. Our results indicate that changing the lattice constants, hole or electron doping, and stacking of B? X effect the energy levels of the σ and π bands in MgBX compounds. © 2003 Wiley Periodicals, Inc. Int J Quantum Chem, 2004