磁控溅射制备ZnO薄膜及其声表面波特性

通过射频磁控溅射技术在GaAs，Au/GaAs，Si和玻璃基片上成功制备了ZnO多晶薄膜，利用X射线衍射对ZnO薄膜的取向、结晶性进行了表征，结果表明ZnO薄膜呈完全c轴取向，Au缓冲层可以有效地改善ZnO薄膜的晶体质量，X射线摇摆曲线结果表明ZnO(002)衍射峰的半高宽仅为2.41°，同时发现Au缓冲层的结晶质量对ZnO薄膜的c轴取向度有很大影响，通过扫描电子显微镜对ZnO/GaAs和ZnO/Au/GaAs薄膜的表面形貌进行了观测，利用网络分析仪对IDT/ZnO/GaAs薄膜的声表面波特性进行了测量. 关键词： ZnO薄膜 X射线衍射 声表面波     

ZnO薄膜和薄膜声表面波器件

由Solie和Kino等人提出的薄膜SAW器件,实际上是一种包括覆盖在非压电基片上的压电薄膜在内的层状结构。适当选择压电薄膜和基片材料,可实现强压电耦合和高温度稳定性,氧化锌(ZnO)薄膜由于它有较高的机电耦合系数(K:(?)0.28)、较好的温度稳定性以     

纳米结构ZnO薄膜的制备及其疏水特性

利用水热法制备出与透明导电衬底附着良好的多种纳米结构ZnO薄膜,包括纳米柱阵列、纳米管阵列、纳米片阵列等,方便集成在多种器件上。并且实现了阵列中纳米柱、纳米管外径的调节,柱外径在50~300 nm范围内可调,管外径在300~1 000 nm范围内可调。几种纳米薄膜均显示出较强的疏水性。在未经任何低表面能物质修饰的情况下,水在外径约300 nm的管状阵列表面的静态接触角已达138°。而在紫外光照射下,这些疏水的ZnO薄膜还可以变得亲水。这些研究结果为ZnO纳米阵列在相关方面的应用提供了重要依据。     

分子束外延生长的ZnO压电薄膜及其声表面波器件特性

用RF-MBE在蓝宝石(0001)衬底上引入MgO和低温ZnO双缓冲层生长了ZnO薄膜,并制备了声表面波器件。在ZnO薄膜中,仅观测到(0002)面的XRD,且衍射峰增强,半高宽减小,表明ZnO薄膜c轴取向性更好,晶体结构更优。室温下自由激子吸收峰更尖锐和吸收边更陡峭以及仅观测到自由激子发光,且发光线宽变窄、发光强度变大,表明ZnO薄膜缺陷密度减小,薄膜质量提高。测得该ZnO压电薄膜的电阻率高达4×10⁷ Ω·cm,其声表面波的速度高达5 010 m/s。     

In掺杂ZnO薄膜的制备及其特性研究

采用射频反应溅射技术在硅(100)衬底上制备了未掺杂和掺In的ZnO薄膜。掠角X射线衍射测试表明,实验中制备的掺In样品为ZnO薄膜。用X射线衍射仪、原子力显微镜和荧光分光光度计分别对两样品的结构、表面形貌和光致发光特性进行了表征,分析了In掺杂对ZnO薄膜的结构和发光特性的影响。与未掺杂ZnO薄膜相比,掺In ZnO薄膜具有高度的C轴择优取向,同时样品的晶格失配较小,与标准ZnO粉末样品之间的晶格失配仅为0．16％;掺In ZnO薄膜表面平滑,表面最大不平整度为7nm。在掺In样品的光致发光谱中观察到了波长位于415nm和433nm处强的蓝紫光双峰,对掺In样品的蓝紫双峰的发光机理进行了讨论,并推测出该蓝紫双峰来源于In替位杂质和Zn填隙杂质缺陷。     

高质量纳米ZnO薄膜的光致发光特性研究

报道了利用低压-金属有机物化学气相沉积技术生长纳米ZnS薄膜，然后，将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜.x射线衍射结果表明，纳米ZnO薄膜具有六角纤锌矿多晶结构.室温下观察到一束强的紫外(3.26 eV) 光致发光和很弱的深能级发射.根据激子峰的半高宽度与温度的关系确定了激子-纵向光学声子（LO）的耦合强度（ГLO）.由于量子限域效应使ГLO减少较多. 关键词： 光致发光 热氧化 激子 纳米ZnO薄膜     

ZnO薄膜/金刚石在不同激励条件下声表面波特性的计算与分析

本文首先以刚度矩阵法为基础, 给出了ZnO薄膜/金刚石在四种不同激励条件下的有效介电常数计算公式. 然后以此为工具, 分别计算了多晶ZnO(002) 薄膜/多晶金刚石和单晶ZnO(002) 薄膜/多晶金刚石的声表面波特性, 并根据计算结果及设计制作声表面波器件的要求, 对ZnO膜厚的选择进行了详细地分析. 最后讨论了ZnO/金刚石/Si复合晶片可以忽略Si衬底对声表面特性影响时对金刚石膜厚的要求. 关键词： 声表面波 压电多层结构 有效介电常数 刚度矩阵法     

表征超大规模集成电路互连纳米薄膜硬度特性的声表面波的频散特性

利用声表面波(SAW)的频散特性来表征超大规模集成电路(ULSI)互连系统中低介电常数(k)薄膜的物性具有准确、快速、对材料无损伤等突出优点.研究了Si(100)衬底上淀积低k薄膜的分层结构中，SAW沿任意方向传播的色散关系.引入坐标变换后，单层薄膜特征矩阵从9阶降到6阶，双层薄膜特征矩阵从15阶降到10阶，大幅度提高了计算速度，有利于生产ULSI过程中的在线监测. 关键词： 超大规模集成电路 声表面波 传输方向 频散特性     

Preparations and characterizations of ZnO nano-structural films and related SAW sensors

ZnO nano-structural films are prepared by RF magnetron sputtering and the hydrothermal synthesis.The morphologies,crystal structures and chemical compositions of the ZnO nano-scaled films are analyzed by XRD,SEM and XPS,which show that the ZnO nanorods are well oriented along c-axis as the preparation conditions are suitably selected;and there are a lot of oxygen vacancies and adsorbed oxygen atoms in the ZnO nano-structural films,which are beneficial to be utilized as gas-sensing materials.Furthermore,SAW(Rayleigh wave and Love wave) sensors based on ZnO nano-structural films deposited on 128°YX-LiNbO_3 and 36°YX-LiTaO_3 piezoelectric substrates are fabricated and used for sensing hydrogen at room temperature.The results show that the Love wave sensors have better sensing properties,such as high sensitivities and superior performances.     

Growth and characterizations of ZnO and Co-doped ZnO films for their use in spintronic

Diluted Magnetic Semiconductors offer potential applications for spintronics. In this respect, Co-doped ZnO films are particularly interesting due to their Curie temperature. However, the origin of ferromagnetism is controversial. High quality Co-doped ZnO thin films have thusly been grown using the pulsed laser deposition technique on (001) Al₂O₃ substrates. Two series were made. In the first one, the films are grown using metallic targets whereas in the second one, the films are synthesized from ceramic targets. Detailed characterizations have been performed and a comparison have been made, in light of the literature.     

Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

The production of boron carbide (B₄C) nanoparticles was investigated in a conventional high temperature furnace reactor. The reaction was carried out by heating a mixture of amorphous carbon and amorphous boron at 1550 °C to efficiently obtain a quantity of B₄C. Scanning electron microscopy studies showed the average size of B₄C particles was 200 nm, ranging from 50 nm to 350 nm. X-ray diffraction transmission electron microscopy and electron diffraction studies indicated that the prepared nanoparticles were crystalline B₄C with a high density twin structure. High resolution transmission electron microscopy and selected area diffraction were also used to further characterize the structure of the prepared B₄C particles, while energy dispersive spectroscopy and electron energy loss spectroscopy were used to determine the stoichiometry of the product. A solid state diffusion reaction mechanism is proposed.     

Characteristics of SAW UV sensors based on a ZnO/Si structure using third harmonic mode

This paper describes the characteristics of surface acoustic wave (SAW) ultraviolet (UV) sensors fabricated from a ZnO thin film using the third harmonic mode. A ZnO thin film was used as an active layer for UV detection, and a piezoelectric layer was sputtered using magnetron sputtering. The X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO sputtered onto Si(100) was highly (002)-oriented and had good optical properties. The two-port SAW resonator was based on an inter-digital transducer (IDT)/ZnO/Si structure and was fabricated and exposed under UV light at a wavelength of 380 nm. As a result, under a UV intensity of 3 mW/cm², the SAW UV sensor was greatly shifted by 400 kHz at the third harmonic mode compared to a frequency shift of 10 kHz in the fundamental mode.     

PL and EL characterizations of ZnO:Eu, Li films derived by sol-gel process

ZnO:Eu³⁺, Li⁺ films prepared by the dip-coating method were characterized by photoluminescence (PL) and electroluminescence (EL). When the ZnO:Eu³⁺, Li⁺ films were excited using UV light with energy corresponding to the band-to-band excitation of the host matrix, the PL spectra showed emissions from both ZnO and Eu³⁺ ions, while their EL spectra showed emissions only from Eu³⁺ ions, and no emission from ZnO could be detected. It is found that the EL emission intensity B is dependent on the applied voltage, B=B_o exp(−bV^−1/2). With increasing frequency, the EL intensity dramatically increases at lower frequencies (<1000 Hz), and then increases gradually at higher frequencies (>1000 Hz).     

Hydrogen sensors based on ZnO nanoparticles

Hydrogen sensing characteristics of thick films of nanoparticles (∼35 nm diameter) of ZnO, 3% Co doped ZnO, 1% Pt-impregnated ZnO and 1% Pt-impregnated 3% Co-ZnO have been investigated. The last composition exhibits the highest sensitivity for 10-1000 ppm H₂, reaching values upto 1700 as well as good response and recovery times at 125 °C or lower. The sensor is not affected significantly upto 50% relative humidity.     

Comparative study of ZnO thin films deposited by various methods for use as sensors

Good and adhesive semiconducting films of ZnO (∼ 100–1100 nm) were deposited over planar borosilicate glass by spray pyrolysis and dip & dry method. The films were characterized by X-ray diffraction and optical absorption measurements. The band gap of these films were found to be 3.21 eV and the films were randomly oriented having average crystallite sizes of 20 to 25 nm. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.     

Study on field-emission characteristics of electrodeposited Co-doped ZnO thin films

Co-doped ZnO films were fabricated using electrodeposition method on the ITO substrates. The structure of the Co-doped ZnO films was analyzed by X-ray diffraction and scanning electron microscope. The field-emission characteristics of the prepared Co-doped ZnO films were examined using diode structure in a vacuum chamber. The examined results indicate that the Co-doping cause the turn-on field increasing by increasing the concentration of the Co-dopant, probably due to the band gap changing, which could attributed to the sp-d exchange interactions between the band electrons and the localized d electrons of the Co²⁺ ions substituting Zn ions in the films.     

Nanomechanical characterizations of InGaN thin films

In_xGa_1−xN thin films with In concentration ranging from 25 to 34 at.% were deposited on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Crystalline structure and surface morphology of the deposited films were studied by using X-ray diffraction (XRD) and atomic force microscopy (AFM). Hardness, Young's modulus and creep resistance were measured using a nanoindenter. Among the deposited films, In_0.25Ga_0.75N film exhibits a larger grain size and a higher surface roughness. Results indicate that hardness decreases slightly with increasing In concentration in the In_xGa_1−xN films ranged from 16.6 ± 1.1 to 16.1 ± 0.7 GPa and, Young's modulus for the In_0.25Ga_0.75N, In_0.3Ga_0.7N and In_0.34Ga_0.66N films are 375.8 ± 23.1, 322.4 ± 13.5 and 373.9 ± 28.6 GPa, respectively. In addition, the time-dependent nanoindentation creep experiments are presented in this article.     

SAW characteristics of AlN films sputtered on silicon substrates

This article is focused on the analysis of the electroacoustic response of surface acoustic wave (SAW) filters made of aluminium nitride (AlN) thin films on various types of Si wafers. AlN films with (00.2) orientation were deposited by RF reactive sputtering of an Al target in Ar and N(2) admixtures on Si(100) and (111) wafers with resistivities ranging between 10 and 2000 Omega cm. The electroacoustic response of SAW filters with an acoustic wavelength of 40 microm was analysed by measuring the Sij parameters with a network analyser. We have determined that the out-of-band loss is directly related to the Si substrate resistivity, varying from 26 dB for 10 Omega cm to 55 dB for 2000 Omega cm. The SAW velocity depends on the orientation of the Si wafer, being approximately 4700 m/s for Si(111) and 5100 m/s for Si(100). The electroacoustic responses of the SAW filters were fitted by computations based on a simple circuital model that takes into account parasitic effects such as airborne electromagnetic coupling and conduction through the substrate. This procedure provides accurate values of the electromechanical coupling factor k2 even for devices with poor characteristics. Good quality SAW filters of AlN on high resistivity Si(100) wafers with k2 larger than 0.12% are demonstrated.