2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩/Ni(100)的界面能级结构随薄膜厚度的演化

利用紫外光电子能谱、X射线光电子能谱以及原子力显微镜系统研究了2,7-二辛基[1] 苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)生长在单晶Ni(100)上的能级结构随着薄膜厚度的演化以及薄膜的生长方式. 发现第一层C8-BTBT平躺生长且与Ni基底发生了化学吸附反应. 从第二层起分子直立生长且呈现岛状生长模式. 这种平躺至直立的分子取向转变, 导致薄膜的能级结构在第一层与第二层间发生阶梯式的变化, 真空能级与最高占据能级同步下降. 此后能带结构随着薄膜厚度的增加逐渐向下弯曲, 功函数随着膜厚的增加而减小. 同时还发现由于直立生长的C8-BTBT其层间电导率较差导致实验中的能级未能收敛. 实验结果提示对基于Ni和C8-BTBT的自旋器件需要插入缓冲层并尽可能减少C8-BTBT的层数.     

2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩在Cu(100)上的吸附生长以及能级结构演化

结合紫外光电子能谱(UPS),X射线光电子能谱(XPS),原子力显微镜(AFM)和掠入射X射线衍射谱(GIXRD)等实验手段,系统研究了2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩在Cu(100)基底上的吸附、生长过程以及界面能级结构.发现第一层的分子平躺吸附于Cu(100)上形成稳定的物理吸附.随膜厚增加,分子取向转为直立于薄膜平面,生长模式转为岛状生长模式.分子取向的变化导致膜厚大于16A的薄膜的能级结构发生变化.直立取向的分子在表面形成由内向外的电偶极层,引起真空能级下降,功函数降低;而轨道电离的各向异性使得分子从平躺到直立时UPS得到的分子最高占据轨道(HOMO)峰型发生变化,且HOMO起始边向深结合能端移动整体上随着膜厚的增加,真空能级向下弯曲,HOMO下移,电离能则先减小后增大下移的能带结构利于电子从界面向表面的迁移以及空穴从表面向界面的迁移.     

Ag在CeO2-x(111)薄膜上的生长与电子结构

利用XPS和RPES技术研究了CeO_2-x(111)薄膜表面上的氧空位对Ag纳米颗粒的生长和电子结构的影响. XPS结果表明,室温下,Ag纳米颗粒在部分还原的CeO_2-x(111)薄膜上呈三维岛状生长, 并且岛密度比完全氧化的CeO₂(111)薄膜表面上的大, 说明氧空位可以作为Ag纳米粒子生长的中心. Ag3d_5/2芯能级的结合能随着Ag颗粒尺寸的减小而增大, 主要来源于终态效应的贡献. Ag和CeO_2-x     

苝四甲酸二酐在Au(111)表面的取向生长及电子结构研究

利用X射线光电子能谱(XPS),同步辐射紫外光电子能谱(SRUPS),近边X射线吸收精细结构(NEXAFS)以及原子力显微镜(AFM)等技术研究了苝四甲酸二酐(PTCDA)与Au(111)的界面电子结构、PTCDA分子取向及有机薄膜的表面形貌.SRUPS价带谱显示,伴随PTCDA分子的微量沉积(0·5ML),位于费米能级附近Au的表面电子态迅速消失,但却观察不到明显的界面杂化态,这说明PTCDA分子和Au(111)界面间存在弱电子传输过程,但并没有发生明显的化学反应.角分辨NEXAFS以及SRUPS结果证明PTCDA分子是平铺在衬底表面.根据Au4f7/2和C1s峰积分强度随薄膜厚度的变化以及AFM图像可知,PTCDA分子在Au(111)表面是一种典型的Stranski-Krastanov生长模式,即先层状生长,再岛状生长,并且在层状生长到岛状生长的转变过程中,存在有机分子的去润湿过程.     

2(8-羟基喹啉)-2(苯酚)合锆薄膜的制备与性能研究

设计合成了一种新型的有机电致发光材料2(8-羟基喹啉)-2(苯酚)合锆(Zr(OPh)₂q₂),制备了Zr(OPh)₂q₂薄膜,并利用红外光谱、差热-热重谱、扫描电镜、X射线衍射谱、UV吸收谱和荧光光谱等方法研究了其晶态、热稳定性、能带结构以及光致发光机理。结果表明,Zr(OPh)₂q₂的熔点为381.2 ℃,分解温度为467.1 ℃,具有非常高的热稳定性,利用真空热蒸镀方法很容易在经过净化处理的玻璃基底上形成高质量、无定形纳米级薄膜,在390 nm紫外光的激发下,Zr(OPh)₂q₂薄膜产生发光峰为525 nm、半峰宽度为107.6 nm的强黄绿色荧光,其粉体产生强黄色荧光,是一种性能优良的电致发光材料。     

C20分子与C20(1-)、C20(2-)离子的特性分析与比较

应用密度范函理论（DTF）的B3LYP方法,在6-31G*基组水平上对CI对称C20富勒烯分子及 C20(1-)、C20(2-)离子进行了几何结构的全局优化、频率以及自然键轨道分析计算（NBO）,然后对三者的几何构型、稳定性、振动光谱等做了分析和比较。研究表明：离子的键长普遍比分子的键长长, C20(1-)离子的稳定性最高。 C20(2-)离子的红外峰值较大,C20(1-)离子的拉曼光谱峰值较大,振动光谱可以用来作为区分三者的手段。     

2,6-双(三甲基锡)-4,8-双(2-乙基己氧基)苯并[1,2-b∶4,5-b']二噻吩的合成与多核NMR研究

以苯并[1,2-b∶4,5-b´]二噻吩-4,8-二酮为原料合成了一种聚合物太阳能电池材料的单体2,6-双(三甲基锡)-4,8-双(2-乙基己氧基)苯并[1,2-b∶4,5-b´]二噻吩. 通过多核1D和2D NMR技术（包括1D ¹H、¹³C、¹¹⁹Sn、¹¹⁷Sn NMR、DEPT、选择性1D TOCSY及2D¹H-¹H COSY、gHSQC、gHMBC）表征了目标分子结构,完成了 ¹H、¹³C、¹¹⁹Sn 与¹¹⁷Sn NMR化学位移归属,并探讨了该化合物的NMR谱线特征.     

基于4，8-二氢二呋咱[3，}4-b，e]吡嗪高能材料的设计与筛选

为了寻找高能量密度的材料,本文设计了一系列基于4,8-二氢二呋咱[3,4-b,e]吡嗪的含能材料. 利用密度泛函理论研究了它们结构与性质之间的关系. 结果表明,这些设计化合物的性质受到含能基团和杂环取代基的影响. -N₃含能基团是提高设计化合物生成热的最有效取代官能团,而四唑环/-C(NO₂)₃基团对炸药的爆轰性能有较大贡献. 键解离能分析表明,引入-NHNH₂,-NHNO₂,-CH(NO₂)₃和-C(NO₂)₃基团会显著降低键解离能. 由于化合物A8,B8,C8,D8,E8和F8具有良好的爆轰性能和热稳定性,最终被筛选为潜在的高能密度材料. 此外,还计算了这些筛选化合物的电子结构.     

二苯并18-冠-6配合物[NH4(DB18-C-6)]2[Pd(SCN)4]的合成与结构分析

研究了二苯并18-冠-6(DB18-C-6)与(NH4)2[Pd(SCN)4]的反应,通过元素分析、红外光谱、单晶X射线衍射对生成的配合物[NH4(DB18-C-6)]2[Pd(SCN)4](1)进行了结构分析.1为三斜晶系,空间群P-1,晶体学数据:a=0.8705(3)nm,b=1.1954(4)nm,c=1.3044(4)nm,α=73.216(5)°,β=78.897(5)°,γ=81.105(6)°,V=1.2682(7)nm3,Z=1,F(000)=568,R1=0.0301,wR2=0.0431.配合物由二个[NH4(DB18-C-6)]+配阳离子和一个[Pd(SCN)4]2-配阴离子组成,二者通过N-H…N氢键形成中性配合物,配合物中不存在阳离子-π相互作用.     

发光性质可调的金属-有机骨架材料[Zn(BDC)(H2O)2-2x·(8-Hq)x]的合成及发光性质

以对苯二甲酸(H2BDC)为配体,以锌为中心离子,采用沉淀法合成了具有一维结构的金属配合物[Zn(BDC)(H2O)2]纳米晶,将化合物分散到不同浓度的8-羟基喹啉(8-Hq)溶液中,得到系列配位聚合物[Zn(BDC)(H2O)2-2x·(8-Hq)x]。分别用FT-IR和XRD对目标产物的结构进行了表征。固态发光性质研究显示:[Zn(BDC)(H2O)2]及其配位聚合物具有强的发光,配位聚合物随着8-Hq量的增加,其发光发射光谱有规律地红移,表明该配位聚合物能够通过改变8-Hq与骨架材料间的量的比实现对材料发光性质的调控。     

Sr与CH3I 反应的的准经轨线计算—能量分布和转动取向

首次构造了放热反应Sr+CH3I的LEPS势能面,并进行了准经典轨线计算。重点计算了该反应产物平动能、振动能、转动能分布和转动取向与碰撞能的关系。其他方面如在更广碰撞能范围内的反应截面以及产物振动分布也做了研究,以便与相应的实验结果相比较—反应截面、产物振动分布与实验吻合。计算结果表明,随着碰撞能的增加,产物转动取向逐渐增强;平动能、转动能、振动能均增加,但平动能占总可用资能的比例下降。     

纳米级润滑膜分子排列取向的拉曼光谱表征技术

利用激光拉曼散射技术,对剪切作用下受限于钢球与石英盘之间的纳米级液晶5 CB的分子排列取向进行研究. 结果表明,在特定的实验条件下,可以得到高信噪比的纳米级润滑膜的拉曼散射信号(20∶1). 同时发现,当激光偏振方向与剪切运动方向平行(垂直)时,所得拉曼信号强度达到最大(小)值,表明纳米级液晶5 CB分子在剪切诱导作用下,沿剪切运动方向趋于定向排列. 另外,当钢球与石英盘之间的剪切速度逐渐增大时,受限的纳米级液晶5 CB的拉曼信号强度也逐渐增大. 最后,利用根据相对光强干涉原理研制的纳米膜厚测量仪对纳米级关键词：薄膜润滑分子排列取向拉曼散射     

Work function measurements on indium tin oxide films

We determined the work function of indium tin oxide (ITO) films on glass substrates using photoemission spectroscopy (PES). The ITO coated glass substrates were chemically cleaned ex-situ, oxygen plasma treated ex-situ, or sputtered in-situ. Our results suggest that the performance of ultraviolet photoemission spectroscopy (UPS) measurements can induce a significant work function reduction on the order of 0.4–0.5 eV, on ex-situ chemically and oxygen-plasma treated ITO samples. This was demonstrated by the use of low intensity X-ray photoemission spectroscopy (XPS) work function measurements before and after the UPS measurements were carried out.     

Surface alloy formation after deposition of Ce on Rh(1 1 0)

Vapour deposition of Ce onto a Rh(1 1 0) single crystal at room temperature is studied by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and low energy electron diffraction (LEED). The thicknesses of the deposited Ce layers are estimated to be between 2 and 9 Å. To study the changes in the Ce-Rh surface layer, the samples are annealed at temperatures between 500 and 1000 °C after Ce deposition.After heating, a c(2 × 2) LEED pattern appears for the sample with the thinnest deposited Ce layer (2.4 Å). For samples with thicker Ce-films, the LEED pattern co-exists of a c(2 × 2) structure and a more diffuse 6% contracted (2 × 1) structure. This appears at the same temperature as the Ce 3d and Rh 3d core levels exhibit sharp intensity changes and binding energy shifts.The intensity of the f⁰, f¹ and f² multiplets in the Ce 3d core level spectra change when the annealing temperature is increased. The relative intensity of the Ce 3d f⁰ and f² features compared to the Ce 3d f¹ features is largest after annealing to 500 °C. This is below the temperature at which the ordered surface alloy is formed. When the sample is heated above the formation temperature of the surface alloy, the relative intensity of the Ce 3d f⁰ and f² features decrease.     

Effects of UV photon irradiation on SiOx (0 < x < 2) structural properties

Thin films of a-SiO_x (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O₂ gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiO_x thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiO_x phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO₂ material (only Si⁴⁺) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy.     

Surface analysis and oxidation behavior of Y-ion implanted AZ31 magnesium alloys

AZ31 samples were implanted with yttrium ions with fluences of 5 × 10¹⁶, 1 × 10¹⁷ and 5 × 10¹⁷ ions/cm², using a metal vapor vacuum arc source at an extraction voltage of 45 kV. The surfaces of the implanted samples were then analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It was found that after treatment a pre-oxidation layer was formed, and the higher the fluence, the thicker the pre-oxidation layer was. The valence states showed that yttrium existed in the form of Y₂O₃. Isothermal oxidation tests have been conducted in pure oxygen at 773 K for 90 min to evaluate the oxidation behavior of the implanted samples. The results indicate that after implantation the oxidation resistance of the samples was significantly improved. Moreover, the greater the fluence, the better the oxidation resistance has been achieved. The characterization of the implanted layers after isothermal oxidation was examined by SEM, AES and XPS. From the results, it can be found that the thickness of the oxide scale formed on the implanted surfaces have been greatly decreased, and there is no obvious change for both the thickness of the pre-oxidation layer and the valence states of the elements after oxidation.     

Electronic structure of the organic semiconductor copper tetraphenylporphyrin (CuTPP)

The electronic structure of thin films of the organic semiconductor copper tetraphenylporphyrin (CuTPP) has been studied using synchrotron radiation-excited resonant soft X-ray emission spectroscopy (RSXE), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, and X-ray photoemission spectroscopy (XPS). The C and N partial density of states for both the valence and conduction band electronic structure has been determined, while XPS was used to provide information on the chemical composition and the oxidation states of the copper. Good agreement was found between the experimental measurements of the valence and conduction bands and the results of density functional theory calculations.