石墨烯莫尔超晶格的晶格弛豫与衬底效应

当两个晶格常数不同或具有相对转角的二维材料叠加在一起时,可形成莫尔超晶格结构,其电学性质对层间堆垛方式、旋转角度和衬底具有很强的依赖性.例如,双层石墨烯的旋转角度减小到一系列特定的值(魔角)时,体系的费米面附近出现平带,电子-电子相互作用显著增强,出现莫特绝缘体和非常规超导量子物态.对于具有长周期性的莫尔超晶格体系,层间相互作用所引起的晶格弛豫会使原子偏离其平衡位置而发生重构.本文主要围绕晶格自发弛豫和衬底对石墨烯莫尔超晶格物性的影响展开综述.从理论和实验的角度出发,阐述旋转双层石墨烯、旋转三层石墨烯、以及石墨烯与六方氮化硼堆垛异质结等体系中自发弛豫对其能带结构和物理性质的影响.最后,对二维莫尔超晶格体系的研究现状进行总结和展望.     

二维莫尔超晶格中的非线性霍尔效应

1879年发现的霍尔效应是凝聚态物理学中最古老也是最重要的领域之一.最近发现的非线性霍尔效应是霍尔效应家族的新成员.与大部分需要打破时间反演对称的霍尔效应不同,非线性霍尔效应存在于少数空间反演破缺但仍具有时间反演对称的系统中,并且因其高频特性和不需额外施加磁场而在诸多领域具有令人期待的应用前景.然而,除空间反演破缺以外,非线性霍尔效应对材料对称性的要求十分苛刻,只在极少数材料中观测到了由贝里曲率偶极矩产生的非线性霍尔效应.近年来快速发展的范德瓦耳斯堆叠技术为剪裁和调控晶体的对称性,制备具有特殊物理性质的人工二维莫尔晶体提供了一个崭新的途径.本文主要围绕二维莫尔超晶格结构在实现非线性霍尔效应方面的特性,介绍了近年来理论和实验上石墨烯超晶格以及过渡金属硫族化合物超晶格中非线性霍尔效应的研究进展,并展望了未来基于二维莫尔超晶格材料的非线性霍尔效应的研究方向和应用前景.     

一维石墨烯超晶格上的氢吸附

通过化学气相沉积法在一种典型的高指数面铜(410)-氧上制备出了一维石墨烯超晶格,并利用拉曼光谱(Raman)、低能电子衍射(LEED)、扫描隧道显微术(STM)等方法研究了氢原子在该超晶格上的吸附.实验结果揭示了由于超晶格的调制作用所引起的无缺陷石墨烯区域的选择性吸附,氢原子优先吸附在石墨烯超晶格一维周期中的相同部位.这一发现为进一步通过一维超晶格调控石墨烯的性质提供了更多可能.在石墨烯上的吸附氢原子除了单个或成对存在之外,实验还首次观察到一种新的三氢原子位型.     

形变超晶格Si/Ge的能带结构

用经验的紧束缚方法对短周期的(Si)_n/(Ge)_m形变超晶格的电子态进行了计算。结果表明,由于布里渊区折迭的要求,只有当n+m=10时超晶格才可能产生直接能隙。对周期为n+m=10的超晶格,Γ,N,△处的导带谷间的相对位置对直接能隙的形成具有决定作用,而n的大小与衬底的组分对此有极大影响。(Si)₆/(Ge)₄和(Si)₈/(Ge)₂超晶格在Si_1-xG 关键词：     

光学超晶格中玻色拓扑模特绝缘体的量子相变

利用精确对角化的方法求解了一维光学超晶格中的玻色-赫伯德哈密顿量,发现体系的量子相变依赖于比值U/J。U/J由零开始增大,超流态逐渐被破坏,系统由超流态向模特绝缘态转变。当U/J≧2.25时体系变为模特绝缘态。     

莫尔晶格中的激子绝缘体

当载流子动能被抑制后,双层量子阱中的电子-空穴可以通过层间库仑相互作用形成激子绝缘体,而抑制动能的主要手段为施加外部磁场产生朗道能级.在二维莫尔晶格中通过能带折叠可以显著抑制载流子动能进而形成莫尔平带.本文主要介绍通过莫尔平带实现无外加磁场的激子绝缘体,着重介绍几个不同的实验思路,并展示如何利用差分反射谱、层间激子光致发光谱、2s激子探测谱、量子电容以及微波阻抗谱探测激子绝缘体信号.总的来说,莫尔晶格中形成的激子绝缘体为在固体环境中研究Bose-Hubbard模型提供了很好的平台,其研究内容可包括激子莫特绝缘体、激子超流以及它们之间的连续转变等.     

二维范德瓦耳斯半导体莫尔超晶格实验研究进展

在二维范德瓦耳斯材料中,可以通过转角及晶格失配构造周期性的莫尔超晶格.自从实验上在“魔角”石墨烯系统中观察到关联绝缘体态和超导电性以来,利用各种二维范德瓦耳斯材料构造莫尔超晶格并研究其中的新奇量子物态成为了凝聚态物理研究的热点和前沿问题.本文主要综述了最近几年在二维半导体过渡金属硫族化合物莫尔超晶格系统中的相关实验进展.在该系统中实现电子“平带”不依赖于特定魔角,实验上,一系列的关联电子物态和拓扑电子物态被相继发现和证实.进一步的理论和实验研究有望在该系统中揭示更多的受电子关联作用和拓扑物理共同支配的新奇量子物态.     

光子莫尔晶格的研究进展

莫尔晶格是指两个相同或者相似的周期结构重叠形成的复合结构.受二维材料中范德华尔斯(van der Waals)异质结形成的莫尔超晶格研究的影响,光学、声学、力学、热学领域中莫尔晶格的研究也相继重拾热情或不断涌现.本文主要回顾了光学莫尔晶格的研究进展,包括构成莫尔晶格的两个周期结构在空间上处于同层的单层莫尔晶格结构和处于...     

具有单轴各向异性的磁性超晶格中的自旋波

应用转移矩阵的方法研究具有单轴各向异性的磁性超晶格中的自旋波谱,得到自旋波所满足的色散方程,分析在一定的参量条件下,单轴各向异性强度对自旋波谱的影响。 关键词：     

二维半导体莫尔超晶格中随位置与动量变化的层间耦合

近些年来引起广泛关注的二维半导体莫尔超晶格系统中存在着莫尔激子、强关联电子态和面外铁电性等新奇物理现象,电子的层间耦合对于理解这些现象至关重要.本文研究了二维半导体双层莫尔超晶格中的层间耦合随位置和动量的变化.外势场导致的局域布洛赫波包的层间耦合与波包宽度以及中心位置处的层间平移有着密切关系.同时,层间耦合随动量的变化使得基态S型波包和激发态P^±型波包有着截然不同的随中心位置变化的层间耦合形式:在两个S型波包的层间耦合消失的位置,S和P⁺型(或S和P^-型)波包之间的层间耦合达到最强.利用该性质,可以通过外加光电场来调控特定谷的基态波包的层间输运.此外,双层系统中发现的面外铁电性可以归结为不同层导带和价带间的耦合导致的电子在两层中的再分配现象.将本文得到的层间耦合形式与单层紧束缚模型相结合,可计算出垂直平面的电偶极密度,其随层间平移的变化形式和数量级与实验观测相符.     

Moiré superlattice modulations in single-unit-cell FeTe films grown on NbSe2 single crystals

Interface can be a fertile ground for exotic quantum states, including topological superconductivity, Majorana mode, fractal quantum Hall effect, unconventional superconductivity, Mott insulator, etc. Here we grow single-unit-cell (1UC) FeTe film on NbSe₂ single crystal by molecular beam epitaxy (MBE) and investigate the film in-situ with a home-made cryogenic scanning tunneling microscopy (STM) and non-contact atomic force microscopy (AFM) combined system. We find different stripe-like superlattice modulations on grown FeTe film with different misorientation angles with respect to NbSe₂ substrate. We show that these stripe-like superlattice modulations can be understood as moiré pattern forming between FeTe film and NbSe₂ substrate. Our results indicate that the interface between FeTe and NbSe₂ is atomically sharp. By STM-AFM combined measurement, we suggest that the moiré superlattice modulations have an electronic origin when the misorientation angle is relatively small (≤ 3°) and have structural relaxation when the misorientation angle is relatively large (≥ 10°).     

Moiré flat bands of twisted few-layer graphite

We report that the twisted few layer graphite (tFL-graphite) is a new family of moiré heterostructures (MHSs), which has richer and highly tunable moiré flat band structures entirely distinct from all the known MHSs. A tFL-graphite is composed of two few-layer graphite (Bernal stacked multilayer graphene), which are stacked on each other with a small twisted angle. The moiré band structure of the tFL-graphite strongly depends on the layer number of its composed two van der Waals layers. Near the magic angle, a tFL-graphite always has two nearly flat bands coexisting with a few pairs of narrowed dispersive (parabolic or linear) bands at the Fermi level, thus, enhances the DOS at E_F . This coexistence property may also enhance the possible superconductivity as been demonstrated in other multiband superconductivity systems. Therefore, we expect strong multiband correlation effects in tFL-graphite. Meanwhile, a proper perpendicular electric field can induce several isolated nearly flat bands with nonzero valley Chern number in some simple tFL-graphites, indicating that tFL-graphite is also a novel topological flat band system.     

相移阴影莫尔条纹正交化解调技术

提出一种基于克莱姆正则化分析法的三帧自标定相移阴影莫尔三维轮廓技术.该技术首先采用移动光栅的方法获得相移条纹图,然后通过不同帧相移条纹图相减去除条纹图背景,进而结合克莱姆正交化法和最小二乘法,发展了一种相位解调方法,提取了测量相位.以五步Harlharan算法为参考,用不同算法对同一物体表面进行测量.结果表明,相对于典型的三步相移法和主量分析方法,提出的方法测量得到的相位误差最小(0.5rad),且简化了测量过程.     

Electronic band gap and transport in graphene superlattice with a Gaussian profile potential voltage

We study the electronic properties for the graphene-based one-dimensional superlattices, whose potential voltages vary according to the envelope of a Gaussian function. It is found that an unusual Dirac point exists and its location is exactly associated with a zero-averaged wave number （zero-re） gap. This zero-k gap is less sensitive to incident angle and lattice constants, properties opposing those of Bragg gap. The defect mode appearing inside the zero-l gap has an effect on transmission, conductance, and shot noise, which will be useful for further investigation.     

载波相移云纹干涉法研究

通过对载波技术研究,提出载波相移云纹干涉法,采用该方法可以实现云纹干涉条纹信息的自动识别,给出了灵敏度和载波频率的定量关系式;同时,对载波数字相移云纹干涉法测试的精度进行了系统分析。     

Enlargement of omnidirectional electronic gap in the graphene superlattice heterostructures with Gaussian profile potential voltages

A valid method is used to extend the omnidirectional electronic gap (OEG) of Gaussian gapped graphene superlattices (GSLs) heterostructure. The heterostructure consists of two superlattices with different width ratios of potentials. Each superlattice comprises a periodic repetition of a unit cell consisting of 21 layers with the potential voltages varying according to a Gaussian function and another layer with a fixed potential voltage. The potential width ratios of constituent Gaussian gapped GSL are established utilizing the lower and upper energy edges of omnidirectional electronic gap depending on the width ratio of potentials. Moreover, it is shown that the width of OEG of the heterostructure is sensitive to lattice constant, which can be applicable to the development of graphene-based electronics.     

基于叠栅技术的二维亚波长周期结构成像设计

用光子学方法研究了叠栅技术中,当试件光栅被拉压和旋转后,叠栅条纹的空间周期和相对于基准光栅的取向,试件光栅被拉压后的节距等相关问题。根据衍射光波的空间周期可能大于试件光栅空间周期的特点,对二维亚波长周期结构衍射成像进行了设计研究。首先,对二维亚波长周期结构衍射物进行编码,以获得包含编码光栅空间信息的均匀波;其次,使编码得到的均匀波通过光学系统,并被放大到CCD相机所能辨识的大小;再次,经解码光栅解码,滤掉编码波,最终获得二维亚波长周期结构物的空间结构信息,达到超分辨的目的。同时,对成像过程进行了较为详尽的分析,对编码器、解码器的位置以及它们相对衍射物的取向进行了设计研究,对滤波器的选择给予了必要的说明,指出了取得超分辨成像的关键。     

Gap solitons in parity time complex superlattice with dual periods

A theory is presented to investigate the existence and propagation stability of gap solitons in a parity-time （PT） com- plex superlattice with dual periods. In this superlattice, the real and imaginary parts are both in the form of superlattices with dual periods. In the self-focusing nonlinearity, PT solitons can exist in the semi-infinite gap. However, only those gap solitons with low powers can propagate stably, whereas the high-power solitons present periodic oscillation and simultane- ously suffer energy decay. In the self-defocusing nonlinearity, PT solitons only exist in the first gap and all these solitons are stable.     

Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substrates

Various temperature measurements of cyclotron resonance (CR) under pulsed ultra-high magnetic field up to 160 T were carried out in InGaAs/GaAs superlattice (SL) and InGaAs/AlAs SL samples grown by molecular beam epitaxy on GaAs substrates. Clear free-electron CR and impurity CR signals were observed in transmission of CO₂ laser with wavelength of 10.6 μm. A binding energy of impurities in these SLs was roughly estimated based on the experiment as result, and we found it was smaller than the previous experimental result of GaAs/AlAs SLs and theoretical calculation with a simple model.