Effect of interfacial diffusion on microstructure and properties of FePt/B4C multifunctional multilayer composite films

FePt/B₄C multilayer composite films were prepared by magnetron sputtering and subsequent annealing in vacuum. By changing Fe layer thickness of [Fe/Pt]₆/B₄C films, optimal magnetic property (8.8 kOe and remanence squareness is about 1.0) is got in [Fe(5.25 nm)/Pt(3.75 nm)]₆/B₄C sample whose composition is Fe rich and near stoichiometric ratio. The characterizations of microstructure demonstrate that the diffusion of B and C atoms into FePt layer depends strongly on B₄C interlayer thickness. When B₄C interlayer thickness of [Fe(2.625 nm)/Pt(3.75 nm)/Fe(2.625 nm)/B₄C]₆ films is bigger than 3 nm, stable value of grain size (6-6.5 nm), coercivity (6-7 kOe) and hardness (16-20 GPa) is observed. Finally, the multifunctional single FePt/B₄C composite film may find its way to substitute traditional three-layer structure commonly used in present data storage technology.     

Field dependence of spin and orbital moments of Fe in L10 FePt magnetic thin films

The field dependence of spin and orbital magnetic moments of Fe in L1₀ FePt magnetic thin films was investigated using X-ray magnetic circular dichroism (XMCD). The spin and orbital moments were calculated using the sum rules; it was found that the spin and orbital moment of Fe in L1₀ FePt films are ∼2.5 and 0.2 μ_B, respectively. The relative XMCD asymmetry at Fe L₃ peak on the dependence of applied field suggested that the majority magnetic moment of L1₀ FePt films resulted from Fe.     

Magnetic properties and microstructure study of high coercivity Au/FePt/Au trilayer thin films

High-coercivity Au(60 nm)/FePt(δ nm)/Au(60 nm) trilayer samples were prepared by sputtering at room temperature, followed by post annealing at different temperatures. For the sample with δ=60 nm, L1₀ ordering transformation occurs at 500 °C. Coercivity (H_c) is increased with the annealing temperature in the studied range 400–800 °C. The H_c value of the trilayer films is also varied with thickness of FePt intermediate layer (δ), from 27 kOe for δ=60 nm to a maximum value of 33.5 kOe for δ=20 nm. X-ray diffraction data indicate that the diffusion of Au atoms into the FePt L1₀ lattice is negligible even after a high-temperature (800 °C) annealing process. Furthermore, ordering parameter is almost unchanged as δ is reduced from 60 to 15 nm. Transmission electron microscope (TEM) photos indicate that small FePt Ll₀ particles are dispersed amid the large-grained Au. We believe that the high coercivity of the trilayer sample is attributed to the small and uniform grain sizes of the highly ordered FePt particles which have perfect phase separation with Au matrix.     

A study of the effect of ZrO2 on the magnetic properties of FePt/ZrO2 multilayer

Fe_xPt_100−x(30 nm) and [Fe_xPt_100−x(3 nm)/ZrO₂]₁₀ (x = 37, 48, 57, 63, 69) films with different ZrO₂ content were prepared by RF magnetron sputtering technique, then were annealed at 550 °C for 30 min. This work investigates the effect of ZrO₂ doping on the microstructural evolution, magnetic properties, grain size, as well as the ordering kinetics of FePt alloy films. The as-deposited films behaved a disordered state, and the ordered L1₀ structure was obtained by post-annealing. The magnetic properties of the films are changed from soft magnetism to hard magnetism after annealing. The variation of the largest coercivities of [Fe_xPt_100−x/ZrO₂]₁₀ films with the Fe atomic percentage, x and differing amounts of ZrO₂ content reveals that as we increase the ZrO₂ content we must correspondingly increase the amount of Fe. This phenomenon suggests that the Zr or O atoms of ZrO₂ preferentially react with the Fe atoms of FePt alloy to form compounds. In addition, introducing the nonmagnetic ZrO₂ can reduce the intergrain exchange interactions of the FePt/ZrO₂ films, and the interactions are decreased as the ZrO₂ content increases, the dipole interactions are observed in FePt/ZrO₂ films as the ZrO₂ content is more than 15%.     

Exchange interaction effect of TbCo/FePt bilayers

Interlayer exchange coupling in dc-magnetron sputtered Tb_29.6Co_70.4/FePt bilayers with different annealing temperatures of the FePt film have been investigated. The dependence of ordering degree on perpendicular magnetic properties of the FePt film was studied. The Tb_29.6Co_70.4/FePt film has high perpendicular coercivity and high saturated magnetization about 7.5 kOe, and 302 emu/cm³, respectively as the substrate temperature is 500 °C and annealing at 500 °C for 30 min. It also shows a strong exchange coupling between this FePt layer and Tb_29.6Co_70.4 layer. We also examined the interface wall energy in the exchange coupled Tb_29.6Co_70.4/FePt double layers.     

Microstructure and magnetic properties of FePt:Ag nanocomposite films on SiO2/Si(1 0 0)

FePt:Ag nanocomposite films were prepared by pulsed filtered vacuum arc deposition system and subsequent rapid thermal annealing on SiO₂/Si(1 0 0) substrates. The microstructure and magnetic properties were investigated. A strong dependence of coercivity and ordering of the face-central tetragonal structure on both Ag concentration and annealing temperature was observed. With Ag concentration of 22% in atomic ratio, the coercivity got to 6.0 kOe with a grain size of 6.7 nm when annealing temperature was 400 °C.     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

Control of crystallographic orientation in L10 FePt films by using Cr and CrW underlayers

The microstructure and magnetic properties of FePt films grown on Cr and CrW underlayers were investigated. The FePt films that deposited on Cr underlayer show (2 0 0) orientation and low coercivity because of the diffusion between FePt and Cr underlayer. The misfit between FePt magnetic layer and underlayer increases by small addition of W element in Cr underlayer or using a thin Mo intermediate layer, which is favorable for the formation of (0 0 1) orientation and the transformation of FePt from fcc to fct phase. A good FePt (0 0 1) texture was obtained in the films with Cr₈₅W₁₅ underlayer with substrate temperature of 400 °C. The FePt films deposited on Mo/Cr underlayer exhibit larger coercivity than that of the films grown on Pt/Cr₈₅W₁₅ because 5 nm Mo intermediate layer depressed the diffusion of Cr into magnetic layer.     

L10 FePt films epitaxially grown on MgO substrates with or without a Cr underlayer

FePt and FePt/Cr films were epitaxially grown on MgO (2 0 0) substrates at 350 °C by DC magnetron sputtering. The structural properties and epitaxial relationship are investigated by high-resolution X-ray diffraction (XRD). The XRD spectra revealed that both FePt and FePt/Cr films had a (0 0 1) preferred orientation. However, FePt films with Cr underlayers had a larger a and a smaller c than those of the samples without Cr underlayers. Furthermore, the FePt (0 0 1) peak characterized by its rocking curves became less pronounced when the Cr underlayer was applied. The off-spectra from the MgO (1 1 1), Cr (1 0 1) and FePt (1 1 1) demonstrated that the epitaxial relationship between the FePt film, Cr underlayer and MgO substrate was confirmed to be FePt (0 0 1)<100> || Cr (1 0 0)<1 1 0> || MgO (1 0 0)<0 0 1>. The domain size and M_s decreased when the Cr underlayer was applied due to the diffusion of Cr and the existence of the initial layer between Cr and FePt layers.     

Underlayer diffusion-induced enhancement of coercivity in high anisotropy FePt thin films

The L1₀ ordered FePt films have been prepared at 300 °C with a basic structure of CrRu/MgO/FePt, followed by a post-annealing process at temperatures from 200 to 350 °C. The magnetic properties and the microstructure of the films were investigated. It is found that coercivity of FePt films increases greatly from 3.57 to 9.1 kOe with the increasing annealing temperature from 200 to 350 °C. The loop slope of the M–H curves decreases with the increasing annealing temperature, which is due to the grain isolation induced by MgO underlayer diffusion during the annealing process. The underlayer diffusion could be a useful approach to prepare the FePt-based composite films for high-density recording media.     

Assembly of high-anisotropy L10 FePt nanocomposite films

In this paper we report results on the synthesis and magnetic properties of L1₀ FePt nanocomposite films. Three fabrication methods have been developed to produce high-anisptropy FePt films: non-epitaxial growth of (0 0 1)-oriented FePt:X (X=Ag, C) composite films that might be used for perpendicular media; monodispersed FePt(CF_x) core–shell nanocluster-assembled films grown with a gas-aggregation technique and having uniform cluster size and narrow size distribution; and template-mediated self-assembled FePt clusters prepared with chemical synthesis by a hydrogen reduction technique, which has a high potential for controlling both cluster size and orientation. The magnetic properties are controllable through variations in the nanocluster properties and nanostructure. Analytical and numerical simulations have been done for these films, providing better understanding of the magnetization reversal mechanisms. The films show promise for development as magnetic recording media at extremely high areal densities.     

Low-temperature ordering of L10 FePt phase in FePt thin film with AgCu underlayer

FePt (20 nm) films with AgCu (20 nm) underlayer were prepared on thermally oxidized Si (0 0 1) substrates at room temperature by using dc magnetron sputtering, and the films annealed at different temperature to examine the disorder–order transformation of the FePt films. It is found that the ordered L1₀ FePt phase can form at low annealing temperature. Even after annealing at 300 °C, the in-plane coercivity of 5.2 kOe can be obtained in the film. With increase in annealing temperature, both the ordering degree and coercivity of the films increase. The low-temperature ordering of the films may result from the dynamic stress produced by phase separation in AgCu underlayer and Cu diffusion into FePt phase during annealing.     

Ordering temperature of L10-type FePt films reduced by CuO addition

Effects of addition of CuO layers in L1₀-type FePt thin films are investigated. The ordering temperature of L1₀-type FePt films can be reduced by CuO addition. The coercivities of 0.78 and 0.82 T are achieved in [Pt(10 Å)/Fe(14 Å)/CuO(2 Å)]₁₀ film annealed at 550 °C for 20 min and [Pt(10 Å)/Fe(15 Å)/CuO(3 Å)]₁₀ film annealed at 600 °C for 20 min, respectively, and these values are compared to the coercivity of 0.8 T in [Pt(10 Å)/Fe(13 Å)]₁₀ film annealed at 650 °C. The thickness of Fe and CuO layers strongly influences the ordering temperature of L1₀-type FePt and the magnetic properties of the films. The addition of CuO not only brings microstructure and surface morphology changes of FePt film, but also lowers the ordering temperature.     

Low-temperature ordering and enhanced coercivity of L10-FePt thin films with Al underlayer

FePt multilayer films with and without Al underlayer were prepared by magnetron sputtering on SiO₂ substrate and subsequently annealed in vacuum. Experimental results suggest that the existence of Al underlayer can effectively reduce the ordering temperature and increase the coercivity of FePt films. Due to the slight larger lattice constant of Al underlayer than that of FePt films, [Fe (0.66 nm)/Pt (0.84 nm)]₃₀ films begin to order at 350 °C and the coercivity of them reach to 5.7 kOe after annealing at 400 °C for half an hour.     

Monolayer deposition of L10 FePt nanoparticles via electrospray route

The deposition monolayers of L1₀ FePt nanoparticles via an electrospraying method and the magnetic properties of the deposited film were studied. FePt nanoparticles in a size of around 2.5 nm in diameter, prepared by a liquid process, were used as a precursor. The size of the deposited particles can be controlled up to 35 nm by controlling the sprayed droplet size that is formed by adjusting the precursor concentration and the precursor flow rate. The droplets were heated in a tubular furnace at a temperature of up to 900 °C to remove all organic compounds and to transform the FePt particles from disordered face centered cubic to an ordered FCT phase. Finally, the particles were deposited in the form of a monolayer film on a silicon substrate by electrostatic force and characterized by scanning electron microscopy. The monolayer of particles was obtained by the high charge on particles obtained during the electrospraying process. The magnetic properties of the monolayer were investigated by magneto-optic Kerr effect measurements. Coercivity up to 650 Oe for a film consisting of 35 nm L1₀ FePt nanoparticles was observed after heat treatment at a temperature of 800 °C.     

Preparation and magnetoresistance of thin CrO2 films

Highly textured chromium dioxide (CrO₂) films have been deposited on Al₂O₃ single-crystal substrates by atmospheric pressure chemical vapor deposition method (CVD). X-ray diffraction patterns show that the CrO₂ films are (1 0 0)-oriented on Al₂O₃ (0 0 1) substrates, and are (1 0 1)-oriented on Al₂O₃ (0 1 2) substrates. Scanning electron microscopy images indicate that the (1 0 0)-oriented CrO₂ films grown on Al₂O₃ (0 0 1) substrates have smoother surface and better qualities than that grown on Al₂O₃ (0 1 2) substrate. At room temperature, the magnetoresistance of the (1 0 0)- and (1 0 1)-oriented CrO₂ films are nearly same, and both show a linear dependence on applied magnetic field. While at 80 K, the (1 0 1)-oriented CrO₂ films show a much larger magnetoresistance compared with the (1 0 0)-oriented CrO₂ films. The reasons are briefly discussed.     

Effects of Cr underlayer and Pt buffer layer on the interfacial structure and magnetic characteristics of sputtered FePt films

This work develops a new method for growing L1₀ FePt(0 0 1) thin film on a Pt/Cr bilayer using an amorphous glass substrate. Semi-coherent epitaxial growth was initiated from the Cr(0 0 2) underlayer, continued through the Pt(0 0 1) buffer layer, and extended into the L1₀ FePt(0 0 1) magnetic layer. The squareness of the L1₀ FePt film in the presence of both a Cr underlayer and a Pt buffer layer was close to unity as the magnetic field was applied perpendicular to the film plane. The single L1₀ FePt(1 1 1) orientation was observed in the absence of a Cr underlayer. When a Cr underlayer is inserted, the preferred orientation switched from L1₀ FePt(1 1 1) to L1₀ FePt(0 0 1) and the magnetic film exhibited perpendicular magnetic anisotropy. However, in the absence of an Pt intermediate layer, the Cr atoms diffused directly into the FePt magnetic layer and prevented the formation of the L1₀ FePt(0 0 1) preferred orientation. When a Pt buffer layer was introduced between the FePt and Cr underlayer, the L1₀ FePt(0 0 1) peak appeared. The thickness of the Pt buffer layer also substantially affected the magnetic properties and atomic arrangement at the FePt/Pt and Pt/Cr interfaces.     

Magnetic behavior of MnAs precipitates in Ga1−xMnxAs diluted magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x≈4.7–5.5%) were grown on (1 0 0) GaAs substrates by molecular beam epitaxy. These p-type (Ga,Mn)As films were revealed to have a ferromagnetic structure and ferromagnetism is observed up to a Curie temperature of 318 K, which is ascribed to the presence of MnAs secondary magnetic phases within the film. It is highly likely that the phase segregation occurs due to the high Mn cell temperature around 890–920 °C, as it is well established that GaMnAs is unstable at such a high temperature. The MnAs precipitate in the samples with x≈4.7–5.5% has a Curie temperature T_c≈318 K, which was characterized from field-cooled and zero-field-cooled magnetization curves.     

Structural and magnetoresistive properties of half metallic Co2Mn1−xSi thin films

Polycrystalline Co₂Mn_1−xSi (CMS) thin films with Mn-deficiency can grow on different types of substrates such as MgO (1 0 0) single crystal, α-sapphire (0 0 0 1) and Si coated with SiO₂ either by using V or Ta/Cu as the seed layer. The magnetic property, especially the coercivity of the CMS thin films strongly depends on the crystalline structure and microstructure of the CMS thin film, hence it is affected by the substrate and also the seed layer. Very soft CMS thin film with coercivity of about 20 Oe has been obtained when MgO (1 0 0) is used as the substrate. Magnetic tunnel junctions (with MR ratio of about 9%–18%) by utilizing the CMS as one of ferromagnetic electrodes have been successfully fabricated. The degradation of the magnetoresistive effect of the MTJ after magnetic annealing is attributed to the diffusion of the Mn-atoms into the tunnel barrier during the annealing process.     

Magnetic properties and microstructure of x/FePt (x=Ge,GePt) bilayer

We have investigated the effect of Ge, GePt underlayers on the formation of ordered L1₀ FePt films. With Ge underlayer, the Ge₃Pt₂ compound was formed during post-annealing at 400 °C for 1 h. Interlayer diffusion of Ge and FePt layer suppress the formation of ordered L1₀ FePt phase. With Ge₂Pt₃ underlayer, the FePt film was ordered at 350 °C and the in-plane coercivity was 5.1 kOe. The ordering temperature was reduced to about 50 °C compared to the single-layer FePt film.