Correlation of resonance scattering and superconductivity in PbxSn1−xTe solid solutions doped with In

The Hall coefficient and resistivity were measured on a series of samples of Pb_xSn_1−xTe with 0x0.45 and 5 at% of InTe as a dopant. All samples show p-type conductivity with hole concentration in the range from 10¹⁹ to 10²¹ cm⁻³ at 77 K. A slight decrease of Hall mobility and corresponding increase in the scattering cross-section of holes by impurity atoms was observed with an extremum at x=0.25. All samples exhibit a transition to a superconducting state with the critical temperatures ranging from 0.3 to 3.0 K. The maximum of dH_c2/dT (where H_c2 is the second critical field) correlates with the fall in mobility (or rise in the scattering cross-section of holes), which shows that the resonance scattering mechanism is playing an important role in the enhancement of superconducting properties of these solid solution materials.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

Electrons and holes in HgTe and Hg0.82Cd0.18Te with controlled deviations from stoichiometry

The deviations from the stoichiometric composition of HgTe and Hg_0.82Cd_0.18Te crystals have been controlled by heat treatment under Hg vapor pressure. The magnetic field dependence of the Hall coefficient always shows the presence of two different sets of electrons and one set of holes. A low mobility electron is shown to belong to the conduction band. Vapor pressure dependence of hole concentration in HgTe shows that the concentration of nonstoichiometric defects decreases with increasing Hg vapor pressure, but the hole concentration is always higher than the electron concentration. In the case of Hg_0.82Cd_0.18Te, the electron concentration exceeds the hole concentration at high Hg vapor pressures. The dependence of the conduction band electron mobility in HgTe upon carrier density shows that the scattering by holes and impurities is predominant. In Hg_0.82Cd_0.18Te, however, optical phonon scattering is dominant when the deviation from stoichiometry is small and the effect of residual impurities can be neglected, and scattering by holes is dominant when the hole concentration is over $\text{10}{}^{17}\text{cm}{}^3$.     

Electron scattering in CdxHg1−xTe

Experimental studies of the electron mobility in Cdinx,Hgin1?xTe/0x/0.33, 10¹⁵ cm^?3n10¹⁸ cm^?3, 4.2 K ?T ?300 K/and of the thermoelectric power of intrinsic HgTe from 300 K down to 5 K are reported. These results are interpreted in terms of calculations based on the variational solution of the Boltzmann equation. Analysis shows that in pure samples at low temperatures, the electron mobility is limited by ionized donors, heavy holes, and, in some cases, unresolved defect scattering. In the doped samples with x0̆.1, disorder scattering also becomes significant. Polar-optical phonon scattering is dominant at high temperatures. The sharp decrease of mobility in the region 20–40 K, which occurs for pure samples with x0̌.14, is explained by interband optical phonon scattering. The thermoelectric power of intrinsic HgTe is strongly affected by phonon-drag of holes at low temperatures and by electron-electron scattering at high temperatures.     

Galvanomagnetic properties of n-type Hg0.8Cd0.2Te

Galvanomagnetic properties of low and high mobility n-Hg_0.8Cd_0.2Te are reported. The experiments were carried out in magnetic fields up to 60 kG and between 1.8 and 77 K. The Hall coefficient does not show thermal and magnetic freeze-out of carriers. At 77 K the transversal magnetoresistance shows a proportionality ?⊥ ∝ B as was predicted by Gurevich and Firsov for the case of polar optical scattering in non-degenerated semiconductors. At 4 K where the mobility is governed by impurity scattering ?⊥ ∝ B^2.4 was observed in the extreme quantum limit. A negative longitudinal magnetoresistance was found at 77 K. The experimental results of high and low mobility samples show significant differences.     

Optical properties of Sm-doped CaF2 bismuth borate glasses

Sm³⁺-doped calcium fluoride bismuth borate glasses were prepared and characterized optically and the oscillator strengths and Judd–Ofelt parameters for the glass containing 1.5 mol% of Sm₂O₃ were calculated. Density and optical absorption, transmission and the emission spectra were measured. The values of Judd–Ofelt parameters suggested an increase in the degree of asymmetry the local ligand field at Sm³⁺ sites. The optical band gap energy, band tailing parameter and Urbach's energy were calculated for all glass samples. It was found that with increasing the concentration of Sm₂O₃ content the values of the optical band gap energy decrease whereas Urbach's energy increases. Absorption and excitation spectra indicate that commercial UV and blue laser diodes, blue and bluish-green LEDs and Ar⁺ optical laser are powerful excitation sources for Sm³⁺ visible fluorescence in the glass.     

Transport properties of CdIn2S4 single crystals

Several transport properties have been studied on CdIn₂S₄ singlê crystals with different degrees of deviation from stoichiometry. The energy gap at 0 K was determined from the electrical measurements to be 2.2 eV. The anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions in k space. From an analysis of the mobility data it was found that the high resistivity of the samples is due to compensation of donors by acceptors introduced by excess sulphur. Several band parameters, the carrier scattering mechanisms and the impurity levels were determined. The thermal conductivity was measured from 4 K to 300 K and analysed by Callaway's formalism.     

Synthesis and transport properties of La2NiO4

La₂NiO₄ compounds were prepared by a modified sol–gel auto-combustion method, which is a low-temperature combustion synthesis procedure using microwave-assisted sol–gel as precursors. The high-temperature transport properties of the samples were investigated. The band structure, total density of states (DOS), and partial density of states (PDOS) of low-temperature orthorhombic (Bmab) phase and high-temperature tetragonal (I4/mmm) phase for La₂NiO₄ were calculated in order to study the transport properties of the as-obtained samples.     

Effect of hydroxyl groups on Er doped Bi2O3-B2O3-SiO2 glasses

A series of Er³⁺-doped Bi₂O₃-B₂O₃-SiO₂-Na₂O glasses with different hydroxyl groups were prepared and the interaction between the Er³⁺ ions and OH groups was investigated. Infrared spectra were measured in order to calculate the exact content of OH groups in samples. The observed increase of the fluorescence lifetime with the oxygen bubbling time has been related to the reduction in the OH content concentration evidenced by infrared (IR) absorption spectra, which confirmed that the OH groups were dominant quenching centers of excited Er³⁺ and a cause of concentration quenching of 1.5 μm band emission. Various nonradiative decay rates from ⁴I_13/2 of Er³⁺ with the change of OH content were determined from the fluorescence lifetimes and radiative decay rates, which were calculated on the basis of Judd-Ofelt theory.     

Electronic structure of the Sr2MgSi2O7:Eu persistent luminescence material

The electronic structures of the distrontium magnesium disilicate (Sr₂MgSi₂O₇(:Eu²⁺)) materials were studied by a combined experimental and theoretical approach. The UV-VUV synchrotron radiation was applied in the experimental study while the electronic structures were investigated theoretically by using the density functional theory. The structure of the valence and conduction bands and the band gap energy of the material as well as the position of the Eu²⁺ 4f ground state were calculated. The calculated band gap energy (6.7 eV) agrees well with the experimental value of 7.1 eV. The valence band consists mainly of the oxygen states and the bottom of the conduction band of the Sr states. The calculated occupied 4f ground state of Eu²⁺ lies in the energy gap of the host though the position depends strongly on the Coulomb repulsion strength. The position of the 4f ground state with respect to the valence and conduction bands is discussed using the theoretical and experimental evidence available.     

High-resolution infrared atmospheric spectra of ozone in the 10-μm region: Analysis of ν1 and ν3 bands-assignment of the (ν1 + ν2) − ν2 band

1988 lines of ozone have been observed in the atmospheric spectrum in the region 1060 to 1220 cm^?1, 1394 of them have been assigned to the ν₁ band, and 480 to the ν₃, particularly corresponding to ΔK_?1 = 2. The analysis has been performed using the Watson Hamiltonian, taking account of the strong Coriolis coupling between the 001 and 100 levels. The constants for the latter two states, the spectra and a listing of the observed and calculated wave-numbers, with their assignment, are given. In addition, 114 lines of the “hot” band (ν₁ + ν₂) ? ν₂ have been observed and assigned and are reported.     

Two models for the transport properties of YBa2Cu3O7−δ in its normal state

The high-temperature superconductor YBa₂Cu₃O_7−δ in its normal state, shows unusual dependence of its transport properties on the oxygen deficiency parameter δ and on temperature: for δ ≈ 0 both the resistivity and the Hall number rise linearly with temperature, while the thermoelectric power is very small. In order to interpret this unusual combination of properties we propose two alternative models, a two-dimensional tight-binding wide-band model, and a narrow-band model. In the first case we assume scattering by a fully excited boson field, with a mean free path Λ ∝ 1/T. In the second model we assume a band composed of two parts, where the upper smaller part does not contribute to transport (as would result from the existence of a mobility edge), and Λ is independent of temperature. The calculated results are compared with experiments.     

Kinetic properties of p-Mg2SixSn1 ? x solid solutions for x < 0.4

The results of a study of Mg₂Si _x Sn_{1 − x} solid solutions (x = 0.25, 0.3, 0.35, 0.4) are reported. The measurements performed cover the Seebeck coefficient, electrical conductivity and the Hall coefficient over broad ranges of temperatures (80–700 K) and carrier concentrations (10¹⁸ to 6 × 10²⁰ cm⁻³). These measurements were used to derive the band structure parameters (band gap, hole mobility, hole effective mass). The effective mass of holes was found to grow strongly with an increase in their concentration.     

Some thermomagnetic transport effects of Cd3P2

In this paper for the first time measurements are presented of the transverse Nernst effect, the Righi-Leduc effect and the Maggi-Righi-Leduc effect in cadmium phosphide. The measurements were performed on unoriented Cd₃P₂ single crystals, with electron concentrations in the range 0.05–1.7 × 10²⁴m^?, at 110 and 300 K in magnetic fields up to 1.8 $\text{Wb}\text{m}{}^2$. We also measured the room temperature dependence of the zero-field Seebeck coefficient on electron concentration of a large number of undoped and Cu-doped samples. A reversal of sign of the transverse Nernst effect was observed at an electron concentration of about 1.2?1.5 × 10²⁴ m^?3. This reversal of sign and the zero-field Seebeck coefficient vs electron concentration for undoped material can be quantitatively described by a Kane-type conduction band with ?_g = 0.50 eV, m¹_e = 0.040 m_o and a scattering parameter r = ?1. (Optical phonon scattering, if interpreted in a single mode.) This strongly confirms the results of Radautsan et al. that Cd₃P₂ has a non-parabolic Kane-type conduction band. The Righi-Leduc and Maggi-Righi-Leduc effect measurements at 110 K on samples with high electron concentrations, yielded Lorenz numbers only half their theoretical values, indicating that the electron scattering contains an inelastic contribution.     

The ν1 and ν3 Bands of the OOO Isotopomer of Ozone

Using 0.002 cm⁻¹ resolution Fourier transform absorption spectra of an ¹⁷O-enriched ozone sample, an extensive analysis of the ν₃ band together with a partial identification of the ν₁ band of the ¹⁷O¹⁶O¹⁷O isotopomer of ozone has been performed for the first time. As for other C_2v-type ozone isotopomers [J.-M. Flaud and R. Bacis, Spectrochim. Acta, Part A 54, 3–16 (1998)], the (001) rotational levels are involved in a Coriolis-type resonance with the levels of the (100) vibrational state. The experimental rotational levels of the (001) and (100) vibrational states have been satisfactorily reproduced using a Hamiltonian matrix which takes into account the observed rovibrational resonances. In this way precise vibrational energies and rotational and coupling constants were deduced and the following band centers ν₀(ν₃) = 1030.0946 cm⁻¹ and ν₀(ν₁) = 1086.7490 cm⁻¹ were obtained for the ν₃ and ν₁ bands, respectively.     

Transition densities between the 01+, 21+, 41+, 02+, 22+, 11− and 31− states in 12C derived from the three-alpha resonating-group wave functions

All the multipole transition densities between the seven T = 0 states in ¹²C are calculated with the use of the microscopic 3α resonating-group wave functions which are obtained by dynamically solving the 3α relative motion with the total antisymmetrization taken into account exactly. The observed elastic and inelastic electron scattering form factors for the transition to the 2₁⁺, 4₁⁺, 0₂⁺, 1₁^?and 3₁^? states are well reproduced with no additional effective charge. The existence of a deformed intrinsic state for the 0₁⁺, 2₁⁺and 4₁⁺states is deduced by the analysis of the transition densities between them which are derived by the weak-coupling-type 3α wave functions; the intrinsic density distribution is illustrated. The monopole density distribution of the 0₂⁺, 2₂⁺ and 1₁^?, states is found to be much longer ranged than that of the 0₁⁺, 2₁⁺ and 4₁⁺ states; the 3₁^? state case is intermediate. On the basis of the transition densities between the 0₁⁺, 2₁⁺, 0₂⁺ and 2₂⁺ states, analysis is made of the transition between the shell-like states and the molecule-like states with a large spatial-structure change. Specific, effective nucleon-nucleon interactions are folded into the transition densities here obtained. The evident dependence of the radial shape of the folded nucleon-¹²C form factors on the choice of the interactions and the multi-step form factors for the excitation of the 0₂⁺, 1₁^? and 3₁^? states are discussed.     

The High-Resolution ν5 Band of Jet-Cooled Si2F6

Vibration-rotation spectra of the parallel ν₅ band of hexafluorodisilane have been measured in a supersonic free jet with 0.001 cm⁻¹ resolution. Three isotopic species, ^28,28Si₂F₆, ^28,29Si₂F₆, and ^28,30Si₂F₆, have been studied. The effect of internal rotation is not observed, indicating that the splitting is smaller than our spectral resolution. A very weak parallel band observed with a slight red shift from the ν₅ fundamental band has been assigned tentatively to the (ν₄ + ν₅)-ν₄ hot band.     

Raman scattering from magnons in CoCl2 and FeCl2

One-magnon Raman scattering has been observed in the metamagnets CoCl₂ and FeCl₂. The k = 0 magnon energies are 16 ± 1 cm^-1 at 21 K and 16.4 ± 0.4 cm^-1 at 12 K, respectively and these values are in good agreement with previous AFMR and neutron scattering results. A search for two-magnon scattering in both compounds was unsuccessful, largely because of masking from nearby first-order phonons and a weak temperature dependent broad band at 140 cm^-1 in CoCl₂, which is assigned to two-phonon scattering from acoustic phonons.     

Intrinsic ultraviolet luminescence from Lu2O3, Lu2SiO5 and Lu2SiO5:Ce

Radioluminescence and thermally stimulated luminescence measurements on Lu₂O₃, Lu₂SiO₅ (LSO) and Lu₂SiO₅:Ce³⁺ (LSO:Ce) reveal the presence of intrinsic ultraviolet luminescence bands. Characteristic emission with maximum at 256 nm occurs in each specimen and is attributed to radiative recombination of self-trapped excitons. Thermal quenching of this band obeys the Mott-Seitz relation yielding quenching energies 24, 38 and 13 meV for Lu₂O₃, LSO and LSO:Ce, respectively. A second intrinsic band appears at 315 nm in LSO and LSO:Ce, and at 368 nm in Lu₂O₃. Quenching curves for these bands show an initial increase in peak intensity followed by a decrease. Similarity in spectral peak position and quenching behavior indicate that this band has a common origin in each of the samples and is attributed to radiative recombination of self-trapped holes, in agreement with previous work on similar specimens. Comparison of glow curves and emission spectra show that the lowest temperature glow peaks in each specimen are associated with thermal decay of self-trapped excitons and self-trapped holes. Interplay between the intrinsic defects and extrinsic Ce³⁺ emission in LSO:Ce is strongly indicated.     

Enhancement of the electron mobility with infrared photoexcitation in Si: Te at low temperatures

Hall measurements on Te-doped silicon (N _Te 10¹⁶ cm^–3) have been performed in the temperature range between 10 K and 300 K with infrared photoexcitation of electrons into the conduction band. The samples exhibit electron Hall mobilities which are increased by approximately 50% compared to measurements in the dark. The increased electron mobility can be correlated with an increased electron population of shallow donor levels by photoexcitation. Coulomb scattering due to charged shallow donor centers is converted into less efficient dipole scattering (Te-acceptor pairs) by the light-induced redistribution of electrons.