Effect of thin film confined between two dissimilar solids on interfacial thermal resistance

A non-equilibrium molecular dynamics model is developed to investigate how a thin film confined between two dissimilar solids affects the thermal transport across the material interface. For two highly dissimilar (phonon frequency mismatched) solids, it is found that the insertion of a thin film between them can greatly enhance thermal transport across the material interface by a factor of 2.3 if the thin film has one of the following characteristics: (1) a multi-atom-thick thin film of which the phonon density of states (DOS) bridges the two different phonon DOSs for the solid on each side of the thin film; (2) a single-atom-thick film which is weakly bonded to the solid on both sides of the thin film. The enhanced thermal transport in the single-atom-thick film case is found mainly due to the increased inelastic scattering of phonons by the atoms in the film. However, for solid-solid interfaces with a relatively small difference in the phonon DOS, it is found that the insertion of a thin film may decrease the thermal transport.     

Development of sheared and ultra-pure DNA thin films prepared by ultrasonication and purification

DNA solutions were prepared by ultrasonication and purification to compare the characteristics between DNA solutions different in size, purity, or both. Ultrasonication effectively minimized the size variation in native DNA, while purification enhanced the transparency of fabricated DNA thin film. Each DNA solution was used to fabricate water-soluble or organic-soluble thin film. According to the electrical measurement of DNA and CTMA-modified DNA thin films and the fluorescence measurement of PicoGreen-embedded DNA thin films, ultrasonication and purification affect the electrical characteristics and intercalating efficiency of DNA thin films. The electrical properties of the water-soluble thin film and the organic-dissolved thin film were predominantly affected by purification, but opposite tendencies were observed. The highest resistance was observed in water-soluble DNA thin film fabricated from ultra-pure DNA, whereas organic-soluble DNA thin film from ultra-pure DNA showed the lowest resistance. Ultrasonication showed a synergistic effect on PicoGreen-DNA insertion, whereas purification suppressed the fluorescence signal.     

TeSeIn相变记录薄膜的微观特性研究

TeSeIn是一种可逆光存贮介质.分别用单源热蒸发和磁控溅射制备TeSeIn膜.利用透射电镜(TEM)研究了膜的结构和微观形貌.利用俄歇剖面技术(AES-PRO)给出了膜的组分深度剖面,分析了TeSeIn记录介质膜与ZnS保护膜界面间的互扩散大小.利用X光电子能谱(XPS)分析了组元深能级结合能的化学位移.最后根据上面实验结果简要讨论了制备稳定的多元记录介质膜的方法.     

Evaporation of a thin film coated on a substrate induced by a pulsed laser

The two-dimensional Laplace integral transform technique has been applied to get the spatial and temporal temperature distributions in both the molten layer thickness of a thin film coated on a substrate, the still solid part of the thin film of the target and the temperature distribution in the substrate. Also a formula for the time dependence of the evaporated part of the thin film of the target as well as the molten layer thickness of the thin film were obtained. Calculations of the obtained relations were carried out during the irradiation with a pulsed laser. The derivation has taken into account the temperature-dependent absorption coefficient of the irradiated surface and the chemical reaction in the vapor of the thin film. As an illustrative example, computations were carried out on an aluminum thin film coated on a glass substrate.     

关于由薄膜振动产生李萨如图形的研究

在声波演示实验中,可以利用薄膜的受迫振动演示稳定的李萨如图形.在声波驱动下,薄膜的振动可以分为垂直于薄膜表面的横向振动及平行于薄膜表面的纵向振动,本文对理想状态的简化模型的力学原理进行了分析和探讨.     

热蒸发YbF3薄膜的机械特性

 实验研究了热蒸发YbF₃薄膜在大气中的应力和附着力。利用Veeco干涉仪,测试了各种工艺条件下单层YbF₃薄膜的应力。结果发现:YbF₃薄膜的残余应力为张应力,热应力在残余应力中的比重较大;沉积方式对薄膜应力的影响不大;薄膜应力在大气中有一个释放的过程。热处理后,YbF₃薄膜应力增大。     

倾斜粗糙壁面上含不溶性活性剂溶液的动力学特性

针对倾斜随机粗糙壁面上含不溶性活性剂溶液的流动过程, 采用润滑理论建立了液膜厚度和浓度的时空演化模型, 通过PDECOL程序数值求解得到了液膜流/液滴铺展的动力学特性及壁面结构参数的影响. 研究表明: 在重力分量和Marangoni效应共同作用下, 液膜流/液滴铺展速度加快, 液膜边缘和液滴中心出现毛细隆起, 液膜/液滴底部出现凹陷, 同时受粗糙壁面影响, 液膜表面变形更显著. 增加壁面倾角θ具有使重力分量和Marangoni效应增强, 导致隆起和凹陷程度均有所增加的作用. 增大壁面高度D可使液膜流/液滴铺展速度加快, 表面变形放大. 而壁面波数k₀则使液膜流/液滴铺展过程减缓, 抑制隆起和凹陷产生. 与液膜流相比, D和k₀对液滴铺展速度的影响相对较小. 关键词： 随机粗糙壁面 液膜 Marangoni效应 倾斜流动     

Raman scattering of polycrystalline GaSb thin films grownby co-evapouration process

<正>This paper reports that GaSb thin films have been co-deposited on soda-lime glass substrates.The GaSb thin film structural properties are characterized by Raman spectroscopy.The Sb-A_1g/GaSb-TO ratio decreases rapidly with the increase of substrate temperature,which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease.In Raman spectra,the transverse optical（TO） mode intensity is stronger than that of the longitudinal optical（LO） mode,which indicates that all the samples are disordered.The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the GaSb thin film.A downshift of the TO and LO frequencies of the polycrystalline GaSb thin film to single crystalline bulk GaSb Raman spectra is also observed.The uniaxial stress in GaSb thin film is calculated and the value is around 1.0 GPa.The uniaxial stress decreases with increasing substrate temperature.These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.     

A new approach to the synthesis of functional thin films: Hierarchical synthesis of CaCO3 thin films and their transformation into patterned metal thin films

A patterned metal thin film was synthesized based on a new approach that allows the formation of thin films with complex shape, hierarchical organization, and controlled size under ambient conditions in an aqueous environment. By using a general coating system, a CaCO₃ thin film was transformed into a patterned metal thin film with functional properties, such as adhesion and hydrophobicity. Atomic force microscopy (AFM) and surface-profiling experiments were carried out to measure the adhesion between the probe tip and the substrate and to determine the film thickness. Separation of the patterned ceramic thin film occurred very easily by means of sputtering and chemical treatment with an acidic solution.     

等离子体闪光法识别薄膜损伤的误判消除方法

传统的等离子体闪光法,是根据探测器是否接收到来自薄膜样片周围发射的闪光信号,对薄膜是否发生损伤进行评判,这样的评判方法极易把空气与薄膜的等离子体闪光混淆而发生误判。为了消除这种误判,提出通过比较空气和薄膜各自的等离子体闪光的点燃时间,利用两者时间上的差异,实现对传统等离子体闪光法误判现象的消除方法。为了验证新方法的可靠性,借助于多光子吸收和级联电离理论,建立了空气等离体子体点燃时间的计算模型,根据薄膜与激光的相互作用原理建立了薄膜被击穿时的等离子体点燃时间计算模型,利用建立的模型仿真计算了空气和薄膜的等离子体闪光点燃时间分别为1.856和7.843 ns;搭建实验装置以实现对传统等离子体闪光法的更新,在装置中的不同位置设置三个光电探测器分别采集入射激光信号、空气和薄膜等离子体闪光信号,采集入射激光信号的光电探测器置于聚焦透镜的侧面,另外两个探测器位于薄膜样片周围且左右对称放置,分别用于采集薄膜的等离子体闪光信号和空气的等离子体闪光信号,所有光电探测器采集的信号转换为电信号后同步传输至示波器,以入射激光信号为基准信号,其与空气和薄膜等离子体闪光信号的起始时刻之差,分别为空气和薄膜等离子体闪光点燃时间。脉宽为10 ns、波长为1 064 nm的Nd∶YAG脉冲激光以0.015 cm的聚焦光斑半径、82.4 mJ的入射能量作用于光学厚度为λ/4、直径为20 mm的单层Al₂O₃薄膜样片上后,采集上述激光作用条件下的各路信号,经处理后得到的空气和薄膜的等离子体闪光点燃时间测试值分别为2.7和7.8 ns;理论计算和实验测试结果表明,空气的点燃时间总是小于薄膜的点燃时间,二者有很好的一致性。说明当强激光作用于单层Al₂O₃薄膜表面时,空气等离子体闪光先于薄膜等离子体闪光发生。基于空气和薄膜等离子体闪光点燃时间上的这种差异,利用闪光信号时间上的差别就可准确分辨出薄膜是否发生损伤,从而获得识别薄膜损伤与否的判据,这种从时间差异上识别薄膜等离子体闪光损伤的新方法,无论从理论上还是实验上均为传统等离子体闪光法误判现象的消除提供了技术基础。     

Simulation of the interface characterization of thin film on substrate system by bending creep tests

In the present paper, the finite element simulation of the bending creep tests of the thin film on substrate system is carried out. The purpose of the investigation is to understand the creep stress characterization of the thin film on substrate system with the three points bending creep test method, which plays an important role in the bending creep testing characterization, so as to provide some foundation on determination of interface properties of the thin film on substrate system by a bending creep testing. Finite element results shows that the influences of the thickness of thin film and the modulus ratio of thin film to substrate on stress distribution are important.     

Effects of Mn doping on BaTiO3 thin films grown on highly oriented pyrolytic graphite substrates

We report multiferroelectric properties of Mn-doped BaTiO₃ (MBTO) thin films on highly oriented pyrolytic graphite (HOPG) substrates. The MBTO thin films were grown on the HOPG substrate by pulse laser deposition. For comparison purpose, undoped BaTiO₃ (BTO) thin films were also prepared under same experimental conditions. The BTO and MBTO thin films were polycrystalline, indicating that the MBTO thin film has better crystallinity than the BTO thin film. The leakage current of the MBTO thin film was reduced due to the Mn doping substitution. In addition, the MBTO thin film exhibited better than the BTO thin film in ferroelectric and magnetic behaviors. We suggest that the Mn doping bring about the improvements of ferroelectric and ferromagnetic properties of the BTO thin films. Based on atomic force microscopy (AFM) and conducting AFM (CAFM) studies, the grain size of MBTO thin film was much larger than that of BTO thin film.     

The effects of a thin film dopant precursor on the structure and properties of femtosecond-laser irradiated silicon

Femtosecond (fs) laser irradiation of a silicon substrate coated with a thin film is a flexible approach to producing metastable alloys with unique properties, including near-unity sub-band gap absorptance extending into the infrared. However, dopant incorporation from a thin film during fs-laser irradiation is not well understood. We study the thin film femtosecond-laser doping process through optical and structural characterization of silicon fs-laser doped using a selenium thin film, and compare the resulting microstructure and dopant distribution to fs-laser doping with sulfur from a gaseous precursor. We show that a thin film dopant precursor significantly changes the laser-material interactions, modifying both the surface structuring and dopant incorporation processes and in turn affecting p–n diode behavior.     

Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75×10⁻² Ω cm, exhibiting a factor of 10⁵ higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors.     

Graphene oxide thin film coated quartz crystal microbalance for humidity detection

In this paper, we demonstrated that chemically derived graphene oxide (GO) thin film as a humidity sensitive coating deposited on quartz crystal microbalances (QCMs) for humidity detection. By exposing GO thin film coated QCMs to various relative humidity (RH) environments at room temperature, the humidity sensing characteristics of the QCMs such as sensitivity and linearity, response and recovery, humidity hysteresis were investigated. The experiment results show that GO thin film coated QCMs exhibit an excellent humidity sensing performance. Moreover, the possible humidity sensing mechanism of GO thin film coated QCMs was also investigated by monitoring the crystal's motional resistance change. It is suggested that the frequency response of the QCMs is dependent on water molecules adsorbed/desorbed masses on GO thin film in the low RH range, and on both water molecules adsorbed/desorbed masses on GO thin film and variations in interlayer expansion stress of GO thin film derived from swelling effect in the high RH range.     

MgO(111)上NbN和AlN薄膜的生长研究

在制备NbN/AlN/NbN隧道结的工艺过程中,为了获得具有优质单晶结构的NbN薄膜,我们在MgO(111)基片上探索了直流溅射法制备NbN薄膜的生长工艺条件,XRD研究分析表明,我们获得了单晶结构良好的NbN薄膜;为了支持作为上电极的NbN薄膜的生长,也需要良好的AlN薄膜用作势垒层,我们采用射频磁控溅射设备和纯净的Al靶对AlN薄膜进行了制备研究.实验结果表明,所获得的AlN薄膜具有六方c-轴取向,并讨论了衬底和薄膜界面处可能的结构情况.     

样品厚度对薄膜法X射线荧光光谱测量的影响研究

分别以富集有Cr,Pb和Cd三种元素的尼龙薄膜样品及玻璃纤维滤膜为研究对象,采用滤膜叠加的方式,通过XRF光谱仪测量不同样品厚度下薄膜样品的XRF光谱,根据测得的尼龙薄膜样品中Cr,Pb,Cd元素及玻璃纤维滤膜中Ca,As和Sr元素特征XRF性质的变化,研究样品厚度对薄膜法XRF光谱测量的影响。结果表明：薄膜样品厚度对不同能量区间上元素特征谱线荧光性质的影响并不相同。元素特征谱线能量越大,元素特征X射线荧光穿透滤膜到达探测器的过程中损失越少;但由薄膜样品厚度增加引起的基体效应却越强,相应特征谱线位置处的背景荧光强度就越大,因此样品厚度增加所引起的基体效应对薄膜法XRF光谱测量的灵敏度影响就越大。对于特征谱线能量较低(能量小于7 keV)的元素,以增加薄膜样品厚度的方式来增加待测组分的质量厚度浓度,并不能有效地提高薄膜法XRF光谱测量的灵敏度;对于特征谱线能量较高的元素(能量＞7 keV),可以通过适当增加样品厚度以增加被测组分的质量厚度浓度的方式来提高XRF光谱测量的灵敏度,薄膜样品厚度在0.96～2.24 mm内,更有利于XRF光谱的测量与分析。该研究为大气及水体重金属薄膜法XRF光谱分析中薄样制备及富集技术提供了重要的理论依据。     

表面等离子共振效应中传统近似理论与薄膜光学理论

指出Kretschmann模型的传统表面等离子共振公式在求解金属薄膜的参量时存在近似性,采用更为严密的薄膜光学理论,通过薄膜膜系的特征矩阵,得出表面等离子体共振衰减曲线.结果表明,表面等离子体共振近似理论与薄膜光学理论得到的共振角及反射率幅度存在差别;采用等高线图,给出了共振角差随着金属介电常量的变化规律.进一步的实验表明,薄膜光学理论所得模拟结果较表面等离子体共振近似理论与实验值吻合地更好,证明薄膜光学理论应用在表面等离子体共振效应要优于常用的近似理论.最后,采用两种理论对表面等离子体共振传感器进行优化设计,结果表明,两种理论所获得的高灵敏度分布区域差异较大,必须采用薄膜光学理论提供更精确的薄膜参量,来优化设计高灵敏度表面等离子体共振传感器.     

醇热反应低温合成锰钴镍热敏薄膜

锰钴镍复合氧化物是一种具有半导体性质的热敏材料. 本文采用金属有机沉积技术于室温条件下、在Si衬底上沉积一定 厚度的Mn_1.74Co_0.72Ni_0.54O₄金属 有机化合物薄膜, 并通过醇热反应进行低温结晶化合成, 可得到Mn_1.74Co_0.72Ni_0.54O₄结晶薄膜. 通过X 射线衍射、场发射扫描电子显微镜 (FESEM) 以及阻温特性等测试方法表征, 讨论了醇热反应对锰钴镍热敏薄膜的物相结构、微观形貌以及电学性能的影响. X射线衍射图显示薄膜已出现尖晶石结构的特征峰. 电镜照片说明结晶薄膜的表面较为平整、孔隙率低. 阻温特性关系表明薄膜具有明显的负温度系数效应, 室温(≈27°) 电阻率约为303.13 Ω·cm. 关键词： 醇热反应 锰钴镍薄膜 热敏电阻 低温合成