The Kondo effect of a magnetic impurity under the crystalline field

Using the Coqblin-Schrieffer exchange interaction, we investigate the Kondo effect for a magnetic impurity under the crystalline field, as occuring in La or Y alloys containing cerium impurities. The Hamann typet-matrix equation for the conduction electron scattered by a magnetic impurity is derived and solved, using the method of Zittarz and Müller-Hartmann. We find a Kondo type anomaly and a decreased Kondo temperature due to the crystalline field splittings. The resistivity, entropy and specific heat are calculated and they show some characteristic behavior due to the crystalline field splittings.     

The electrical resistivity of mixed valence materials due to nonmagnetic impurities

We have studied the influence of nonmagnetic impurities on the electrical resistivity of a mixed valent host. The model we consider is the periodic Anderson model where we change the energy parameters at the sites occupied by the randomly distributed impurities. The propagator of the pure system has been obtained by a decoupling scheme [1]. We use the CPA to perform the impurity average for the one-particle Green's function and Kubo's formula to calculate the electrical conductivity. Numerical analysis shows that the resistivity decreases monotonously with increasing temperature. This is in contrast to experimental results [2, 3] and possible reasons for the incorrect low-temperature behaviour are discussed.Dedicated to B. Mühlschlegel on the occasion of his 60th birthdayAddress after October 1985: Imperial College, Department of Physics, Prince Consort Road, London SW7 2BZ, UK     

Influence of interstitials and non magnetic impurities on the Kondo effect

The influence of interstitials and non magnetic impurities on the anomalous resistivity, thermopower and Kondo temperature of dilute magnetic alloys was investigated generalizing a model proposed by Bohnen and Fischer. Numerical results are given as a function of the distance between the interstitial (or non magnetic impurity) and the magnetic impurity using their scattering phase shifts as parameters. The Kondo anomalies are altered considerably, if the magnetic impurity is very close to the non magnetic scattering potential, e.g. if it is part of an interstitial dumbbell.This work is part of a doctoral thesis of G.Wehr at the Technische Universität München     

Transition temperature of a superconductor containing magnetic impurities in the spin fluctuation limit

Renormalization group techniques are used to calculate the transition temperature of a BCS-Superconductor containing magnetic impurities described by the symmetric one orbital Anderson model for small U/πΓ. The suppression of superconductivity is related to the static spin fluctuation susceptibility. Superconductivity is quenched above a critical impurity concentration c_cr = λ?²πΓ/[U_effχ(0)].     

Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities

Two electrostatic models have been developed that allow calculation of the critical concentration of hydrogen-like impurities in three-dimensional crystalline semiconductors corresponding to the insulator-metal and metal-insulator transition in the zero temperature limit. The insulator-metal transition manifests itself as a divergence of the static permittivity observed in lightly compensated semiconductors as the concentration of polarizable impurities increases to the critical level. The metal-insulator transition is signaled by the divergence of the dc electrical resistivity in heavily doped semiconductors as the compensation of the majority impurity increases (or its concentration decreases). The critical impurity concentration corresponds to the coincidence of the percolation level for the majority carriers with the Fermi level. The results of the calculations made with these models fit the experimental data obtained for n-and p-type silicon and germanium within a broad range of their doping levels and impurity compensation.     

Contribution electronique au gradient de champ electrique sur une impurete de transition dans un environnement metallique anisotrope

The experimental data related to the electric field gradient at transition impurities either in hexagonal metals, or in cubic metals where the isotropy is perturbed by a next impurity, can be explained neither by the lattice contribution nor by the electronic contribution from the conduction band. A model is proposed here to investigate the electronic contribution arising from virtual bound 3d states on the impurity, by studying the local crystal field influence in a Friedel-Anderson model. It appears that at the 0°K limit, the localized electronic contribution to the EFG can be linearly related to the density n_d(?_F) of 3d states at the Fermi level. As a first approximation, this law is valid even at temperature different from 0°K so establishing a linear correlation between the EFG, the impurity resistivity and the amplitude of the charge perturbation around the impurity.     

Magnetic and electric properties of Yb x Mn1 − x S alloys

Results from investigating the structural, magnetic, and electrical properties of Yb _x Mn_{1 ? x} S alloys (0 ≤ x ≤ 0.2) synthesized on the basis of manganese monosulfide are presented. Substituting manganese for ytterbium increases the concentration of charge carriers and lowers the activation energy. The observed anomalies in the temperature dependence of resistivity are explained by an impurity semiconductor model with donor 4f levels.     

Magnetoresistance of mixed valent Tm impurities

The resistivity of a metal due to an Anderson impurity with orbital degeneracy in the intermediate valence regime is calculated via the Kubo formula within a mode-mode decoupling scheme. The result depends on the relative occupation of the f-levels and shows a bump as a function of temperature. In the case of Tm the two ionic configurations are magnetic, and a considerable field dependence is obtained.     

On the Kondo resistance anomaly in dilute Zn-Mn alloys

The electrical resistivity of dilute Zn-Mn alloys (c=10–130 ppm Mn) has been investigated with high accuracy in the temperature range from 0.35 to 100 K. The single impurity resistance can be described by a logT-law between 0.4 and 9 K. The Kondo slope is (3.15±0.1) μΩcm/dec at%. From a fit to the Hamann formula we findT _K=1–1.5 K andS=1.5–2. Due to interactions between the impurities the resistivity deviates from the logT-law. The deviation temperatures are concentration dependent and given byT _dev=0.2 K+c · 75 K/at%. The results are compared with earlier investigations.     

Anderson localization and the pseudogap in the energy spectrum of holes in PbTe: Tl under resonant scattering

This paper reports on a comprehensive study of the effect of additional doping with the Na acceptor impurity on the low-temperature resistivity of PbTe samples doped with Tl (2 at %), an impurity producing a band of resonant states within the valence-band spectrum. By additional doping with Na, we have shifted the Fermi level within the band of the resonant states of Tl in PbTe and varied the hole filling (k _h ) of the thallium impurity states. The larger part of the PbTe: (Tl,Na) samples transfers to the superconducting state with a critical temperature T _c = 0.4–2.3 K. The T _c (k _h ) relation obtained argues for the fact that, in the region of resonant states in PbTe: Tl, Anderson localization of holes and a pseudogap in the density of delocalized states are observed.     

The low temperature electrical properties of 1T-TaS2

Measurements of the electrical resistivity of 1T-TaS₂ to 0.03 K show that the increase in resistivity below ～ 50 K is extrinsic.Below 2 K the resistivity is described by ? = ?₀ exp $\text{T}{}_0\text{/T)}\text{1}\text{3}$. Because of this fractional power law behavior, we conclude that the increase is due to Anderson localization by random impurity and/or defect potentials. Other difficulties in understanding the properties of 1T-TaS₂ are also pointed out.     

Frequency moments and energy shifts for dilute Mössbauer impurities in metallic solids

Theoretical evaluations of frequency moments and second order Doppler shifts have been made for dilute⁵⁷Fe impurities in the high temperature limit for a harmonic solid. The resonant energy shifts have been calculated from the Green’s function of the impure crystal containing both mass disordering and force constant change terms in the crystal Hamiltonian. High temperature frequency moments for the impurity in different metallic solids are obtained from Mc-Millan ratios using standard Mössbauerf-values at room temperature. The effect of mass disordering predominates over the force constant change term in the evaluations of second order Doppler shifts and hence the frequency moments for dilute⁵⁷Fe impurities. The variation of frequency moments for the impurity with mass modified Debye-temperature of the hosts is shown for a number of metallic solids.     

Role of anisotropy of the coupling constant in a superconductor model with singularities near the Fermi surface

The role of anisotropy of the coupling constant in the influence of nonmagnetic impurities on the behavior of the superconducting transition temperature T _c is investigated in the high-temperature superconductor (HTSC) model, where high values of T _c result from an increase in the density of states near the Fermi surface. It is shown that this model is more sensitive to impurities than the BCS model; Anderson compensation does not occur in the HTSC model, even for identical distributions of the densities of states in the superconducting and impurity channels, and the impurity contributions are no longer linear with respect to the impurity concentration in the vicinity of T _c. Anisotropy of the superconducting gap Δ and the possibility of its disappearance at certain points on the Fermi surface due to various types of pairing are manifested in the stability of the superconducting phase against the influence of impurities. Fiz. Tverd. Tela (St. Petersburg) 39, 1940–1942 (November 1997)     

Spin disorder resistivity of spin glasses with application to AgMn

The impurity resistivity due to scattering from disordered spins is calculated for temperatures above the ordering temperature T₀. It varies linearly around T₀, but shows a maximum at higher temperatures, in agreement with experiment.     

Electronic structure of non-magnetic impurities in dilute alloys of Al

The electronic structure of substitutional non-magnetic impurities Cu, Ag, Cd, Mg, Zn, Ga, In, Ge, Si and Sn in Al is studied using density functional theory. A simple physical model is proposed to calculate the effective charges on impurities in trivalent metal Al. A linear relation is found between the effective charges on impurities and impurity vacancy capture radii. The spherical solid model (SSM) is used to account for discrete nature of the host. The impurity-induced change in charge density, scattering phase shifts, host-impurity potential, residual resistivity and impurity self-energy are calculated. Higher order scattering phase shifts are found significant and the host-impurity potential is found proportional to effective charge on impurity in its vicinity. The self-consistently calculated potential is used to calculate the electric field gradients (EFGs) at the first and second nearest neighbours (1NNs, 2NNs) of impurity. The calculated values are in agreement with the experimental results.     

The impurity resistivity and resistivity minima in AlCr and AlMn alloys

The impurity resistivity of $\text{Al}$Cr between 1.5 and 50°K was determined with a characteristic temperature for the T² variation θ₁=960±40°K. The behaviour of the resistivity minimum both in $\text{Al}$Cr and $\text{Al}$Mn alloys with impurity concentration provides evidence that a T³ phonon resistivity is found also in aluminium with anomalous impurity resistivity.     

Two Anderson impurities in the framework of the non-crossing approximation: Spectral functions and spin correlations

Using a novel slave boson mapping, which was recently proposed by us for two Anderson impurities embedded in a metal, we present here spectral functions for all pseudoparticles involved in the mapping. These were numerically calculated in the framework of the Non-Crossing Approximation for different temperatures and inter-impurity distances, both for the degenerate (N_f = 6) and nondegenerate (N_f = 2) models. For the nondegenerate case, temperature dependencies of the partial occupancies and the spin-spin correlation function suggest that an antiferromagnetic (AFM)-like ground state is formed at suitable inter-impurity separation. By contrast, Kondo quenching of the impurity moments takes place for the isotropic N_f = 6 case even when a direct AFM interaction is introduced in order to amplify the indirect (inherent) one. Numerical calculations are in agreement with our previous prediction [Phys. Rev. B 47, 14,297 (1993)] that no AFM-like ground state can appear for two isotropic degenerate impurities.     

Structure, electrical and magnetic properties, and the origin of the room temperature ferromagnetism in Mn-implanted Si

The structure and the electrical and magnetic properties of Mn-implanted Si, which exhibits ferromagnetic ordering at room temperature, are studied. Single-crystal n- and p-type Si wafers with high and low electrical resistivities are implanted by manganese ions to a dose of 5 × 10¹⁶ cm^?2. After implantation and subsequent vacuum annealing at 850°C, the implanted samples are examined by various methods. The Mn impurity that exhibits an electric activity and is incorporated into the Si lattice in interstitial sites is found to account for only a few percent of the total Mn content. The main part of Mn is fixed in Mn₁₅Si₂₆ nanoprecipitates in the Si matrix. The magnetization of implanted Si is found to be independent of the electrical resistivity and the conductivity type of silicon and the type of implanted impurity. The magnetization of implanted Si increases slightly upon short-term postimplantation annealing and disappears completely upon vacuum annealing at 1000°C for 5 h. The Mn impurity in Si is shown to have no significant magnetic moment at room temperature. These results indicate that the room temperature ferromagnetism in Mn-implanted Si is likely to be caused by implantation-induced defects in the silicon lattice rather than by a Mn impurity.     

Ab initio theory of transport in FeRh-based natural magnetic multilayers

The electronic structure and the residual resistivity of random FeRh-based alloys in the CsCl structure are calculated for different spin configurations using the tight-binding linear muffin–tin orbital method. The effect of substitutional impurities (Pd, Rh) is described by means of the coherent potential approximation. It is shown that impurity scattering leads to giant magnetoresistance effects in qualitative agreement with experiment.     

Correlated disorder in a Kondo lattice

Motivated by recent experiments on Yb-doped CeCoIn5, we study the effect of correlated disorder in a Kondo lattice. Correlations between the impurities are considered at the two-particle level. We use a mean-field theory approximation for the Anderson lattice model to calculate how the emergence of coherence in the Kondo lattice is impacted by correlations between impurities. We show that the rate at which disorder suppresses coherence temperature depends on the length of the impurity correlations. As the impurity concentration increases, we generally find that the suppression of coherence temperature is significantly reduced. The results are discussed in the context of available experimental data.