Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering

The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl₂O₄ (1 1 1) substrates in pure Ar ambient at different substrate temperatures ranging from 400 to 750 °C by radio frequency magnetron sputtering. X-ray diffraction, photoluminescence and Hall measurements were used to evaluate the growth temperature and the substrate effects on the properties of ZnO films. The results show that the crystalline quality of the ZnO films improves with increasing the temperature up to 600 °C, the crystallinity of the films is degraded as the growth temperature increasing further, and the ZnO film with the best crystalline quality is obtained on sapphire at 600 °C. The intensity of the photoluminescence and the electrical properties strongly depend on the crystalline quality of the ZnO films. The ZnO films with the better crystallinity have the stronger ultraviolet emission, the higher mobility and the lower residual carrier concentration. The effects of crystallinity on light emission and electrical properties, and the possible origin of the n-type conductivity of the undoped ZnO films are also discussed.     

Short time synthesis of high quality carbon nanotubes with high rates by CVD of methane on continuously emerged iron nanoparticles

We report the variation of yield and quality of carbon nanotubes (CNTs) grown by chemical vapor deposition (CVD) of methane on iron oxide-MgO at 900-1000 °C for 1-60 min. The catalyst was prepared by impregnation of MgO powder with iron nitrate, dried, and calcined at 300 °C. As calcined and unreduced catalyst in quartz reactor was brought to the synthesis temperature in helium flow in a few minutes, and then the flow was switched to methane. The iron oxide was reduced to iron nanoparticles in methane, while the CNTs were growing.TEM micrographs, in accordance with Raman RBM peaks, indicate the formation of mostly single wall carbon nanotubes of about 1.0 nm size. High quality CNTs with I_G/I_D Raman peak ratio of 14.5 are formed in the first minute of CNTs synthesis with the highest rate. Both the rate and quality of CNTs degrades with increasing CNTs synthesis time. Also CNTs quality sharply declines with temperature in the range of 900-1000 °C, while the CNTs yield passes through a maximum at 950 °C. About the same CNTs lengths are formed for the whole range of the synthesis times. A model of continuous emergence of iron nanoparticle seeds for CNTs synthesis may explain the data. The data can also provide information for continuous production of CNTs in a fluidized bed reactor.     

Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films

ZnO films doped with Ga (GZO) of varying composition were prepared on Corning glass substrate by radio frequency magnetron sputtering at various deposition temperatures of room temperature, 150, 250 and 400 °C, and their temperature dependent photoelectric and structural properties were correlated with Ga composition. With increasing deposition temperature, the Ga content, at which the lowest electrical resistivity and the best crystallinity were observed, decreased. Films with optimal electrical resistivity of 2-3 × 10⁻⁴ Ω cm and with good crystallinity were obtained in the substrate temperature range from 150 to 250 °C, and the corresponding C_Ga/(C_Ga + C_Zn) atomic ratio was about 0.049. GZO films grown at room temperature had coarse columnar structure and low optical transmittance, while films deposited at 400 °C yielded the highest figure of merit (FOM) due to very low optical absorption despite rather moderate electrical resistivity slightly higher than 4 × 10⁻⁴ Ω cm. The optimum Ga content at which the maximum figure of merit was obtained decreased with increasing deposition temperature.     

Monitoring structural defects and crystallinity of carbon nanotubes in thin films

We report the influence of catalyst formulation and reaction temperature on the formation of carbon nanotube (CNT) thin films by the chemical vapour deposition (CVD) method. Thin films of CNTs were grown on Fe-Mo/Al₂O₃-coated silicon wafer by thermal decomposition of methane at different temperatures ranging from 800 to 1000°C. The electron microscopic investigations, SEM as well as HRTEM, of the as-grown CNT thin films revealed the growth of uniform multi-walled CNTs in abundance. The intensity ratio of D-band to G-band and FWHM of G-band through Raman measurements clearly indicated the dependency of structural defects and crystallinity of CNTs in thin films on the catalyst formulation and CVD growth temperature. The results suggest that thin films of multi-walled CNTs with negligible amount of defects in the nanotube structure and very high crystallinity can be obtained by thermal CVD process at 925°C.     

Carbon nanotube diameter tuning using hydrogen amount and temperature on SiO2/Si substrates

Carbon nanotubes (CNTs) were grown on thin iron (Fe) films on SiO₂/Si substrates by chemical vapor deposition (CVD) at four different hydrogen (H₂)/methane (CH₄) ratios at temperatures ranging from 925 to 1000°C. The effects of temperature and the amount of hydrogen gas on the mean diameter at increasing temperature were examined. We demonstrated that the mean diameter and its distribution depend not only on temperature but also on the H₂ amount. We showed that increasing H₂ amount strongly affects the structure of CNTs, especially at high growth temperature; the mean diameter at 1000°C reduced from about 383 to 34 nm by increasing H₂ amount from 24 to 50 sccm. We observed that at high temperature growth the mean diameter was decreasing very fast initially with increasing H₂ amount suggesting the dominance of H₂ over the growth temperature. A decrease in the slope of diameter vs. H₂ amount with further increment in H₂ amount implied that the temperature was, then, deciding the CNT diameter through catalyst particle coarsening. The statistical analysis presented implies that the H₂ amount has to be adjusted according to the growth temperature for given CH₄ amount to keep CNT diameter under control, and the large diameter distributions at high temperature and high H₂ amount can be associated with the large variation in the catalyst particle sizes.     

Influence of the vacuum level upon the growth of carbon nanotubes on silicon carbide surface

We have investigated the influence of the vacuum level upon the growth of carbon nanotubes (CNTs) on 6H-SiC () surface.CNTs of about 160 nm in length were formed densely and uniformly on the 6H-SiC surface during annealing at 1700 °C in a high vacuum (∼10⁻² Pa). CNTs of about 1 μm in length were formed during annealing at 1700 °C in an ultra-high vacuum (∼10⁻⁷ Pa). However, CNTs were not formed and SiO₂ layers were formed on the SiC surface at 1700 °C in air. It is found that longer CNTs can grow up in an ultra-high vacuum, moreover, a little aligned and low-density graphite layers, or carbon nanofibers can also grow up.     

Fabrication and characterization of magnetic Fe3O4-CNT composites

Carbon nanotubes (CNTs) decorated with magnetite nanoparticles on their external surface have been fabricated by in situ solvothermal method, which was conducted in benzene at 500 °C with ferrocene and CNTs as starting reagents. The as-prepared composites were characterized using XRD, FTIR, SEM and TEM. It has been found that the amount of magnetite nanoparticles deposited on the CNTs can be controlled by adjusting the initial mass ratio of ferrocene to CNTs. The Fe₃O₄-CNT composites display good ferromagnetic property at room temperature, with a saturation magnetization value (M_s) of 32.5 emu g⁻¹ and a coercivity (H_c) of 110 Oe.     

Electrochemical properties of electrosynthesized TiO2 thin films

Titanium dioxide (TiO₂) thin films prepared by cathodic electrodeposition on indium-tin-oxide coated glass substrates from simple aqueous peroxo-titanium complex solutions have been studied as a function of sintering temperature (25-500 °C). The films crystallized in to anatase phase at relatively low temperature (300 °C). Electrochemical properties of amorphous and anatase films were investigated by cyclic voltammogram (CV) in lithium ion containing organic electrolyte. All the films were found to show reversible electrochemical properties upon Li⁺ ion intercalation. The effects of sintering temperature on the crystallinity and consequently on the electrochemical properties of TiO₂ has been discussed.     

High-throughput synthesis and characterization of Mg1−xCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors

Using composition-spread technique, we have grown metastable Mg_1−xCa_xO solid solution films on ZnO layers by pulsed laser deposition. All the films exhibited (1 1 1) oriented cubic phase. Despite a large miscibility gap, no phase separation took place at growth temperatures up to 700 °C, whereas an optimal growth temperature was found at 400 °C in terms of the crystallinity. The composition-spread films were characterized by X-ray diffraction mapping technique. Both lattice parameters and diffraction intensity increased with increasing the CaO composition. The present isovalent heterointerfaces realized the perfect lattice-matching by properly adjusting the CaO composition, leading to particular interest for ZnO based field effect transistors.     

Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4

We have grown InN films on nearly lattice-matched (Mn,Zn)Fe₂O₄ (111) substrates at low temperatures by pulsed laser deposition (PLD) and investigated their structural properties. InN films grown at substrate temperatures above 400 °C show poor crystallinity, and their in-plane epitaxial relationship is [10-10]InN//[11-2](Mn,Zn)Fe₂O₄, which means that their lattice mismatch is quite large (11%). By contrast, high quality InN films with flat surfaces can be grown at growth temperatures lower than 150 °C with the ideal in-plane epitaxial relationship of [11-20]InN//[11-2](Mn,Zn)Fe₂O₄, which produces lattice mismatches of as low as 2.0%. X-ray reflectivity measurements have revealed that the thickness of the interfacial layer between the InN and the substrates is reduced from 14 to 8.4 nm when the growth temperature is decreased from 400 °C to room temperature. This suppression of the interface reactions by reducing the growth temperature is probably responsible for the improvement in crystalline quality. These results indicate that the use of (Mn,Zn)Fe₂O₄ (111) substrates at low growth temperatures allows us to achieve nearly lattice matched epitaxial growth of InN.     

Electrical- and magneto-resistance control for magnetite nanoparticle sinter by regulation of heat treatment temperature

We investigated electrical- and magneto-resistance control in magnetite (Fe₃O₄) nanoparticle sinter (MNPS) by the regulation of heat treatment (HT) temperature. MNPS was produced from hematite (α-Fe₂O₃) nanoparticles (HNP’s) using a deoxidization reaction. The average size of HNP was 30 nm, and HT was carried out between 400 and 800 °C. X-ray diffraction, magnetization, electrical resistivity (ER), and magneto-resistivity (MR) measurements were performed at temperatures ranging from 5 to 300 K. The ER and MR behaviors were considerably different at HT temperatures above and below ∼600 °C. After HT below ∼600 °C, ER followed the Mott-type variable-range-hopping conduction, and MR showed large values over a wide temperature range. After HT above ∼600 °C, ER indicated a Verwey transition near 110 K and MR showed small values, except in the vicinity of the Verwey transition temperature. Changing the HT temperature altered the coupling between adjacent magnetite nanoparticles (MNPs) and affected the crystallinity of MNPS. Below ∼600 °C, ER and MR were dominated by grain-boundary conduction, while above ∼600 °C they were determined by inter-grain conduction. The application of a magnetic field to the grain-boundary region, which had random localized spins, caused a large enhancement in MR.     

Influence of annealing temperature on structural and optical properties of ZnO: In thin films prepared by ultrasonic spray technique

Transparent conducting indium doped zinc oxide was deposited on glass substrate by ultrasonic spray method. The In doped ZnO samples with indium concentration of 3 wt.% were deposited at 300, 350 and 400 °C with 2 min of deposition time. The effects of substrate temperature and annealing temperature on the structural, electrical and optical properties were examined. The DRX analyses indicated that In doped ZnO films have polycrystalline nature and hexagonal wurtzite structure with (0 0 2) preferential orientation and the maximum average crystallite size of ZnO: In before and annealed at 500 °C were 45.78 and 55.47 nm at a substrate temperature of 350 °C. The crystallinity of the thin films increased by increasing the substrate temperature up 350 °C, the crystallinity improved after annealing temperature at 500 °C. The film annealed at 500 °C and deposited at 350 °C show lower absorption within the visible wavelength region. The band gap energy increased from E_g = 3.25 to 3.36 eV for without annealing and annealed films at 500 °C, respectively, indicating that the increase in the transition tail width. This is due to the increase in the electrical conductivity of the films after annealing temperature.     

Influence of annealing temperature on structural, optical and magnetic properties of Zn0.95Cu0.02Cr0.03O powders

Zn_0.95Cu_0.02Cr_0.03O powders have been synthesized by the sol-gel method and sintered in argon atmosphere under different temperatures. The structural, optical and magnetic properties of the powders were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and vibrating sample magnetometer (VSM). The XRD results demonstrated that Cr and Cu ions are incorporated into ZnO successfully when annealing temperatures were 600 and 700 °C. But when the samples were annealed at 500 °C, the crystallinity of the samples was not very good. However, when the annealing temperature was increased to 800 °C, the secondary phase of Cu and ZnCr₂O₄ appeared in the samples. The PL spectra revealed that the position of the ultraviolet (UV) emission peak of the samples showed a blue shift and the green emission peak enhanced significantly with the annealing temperature increasing from 600 to 700 °C. Magnetic measurements indicated that the room temperature ferromagnetism of Zn_0.95Cu_0.02Cr_0.03O was intrinsic in nature. In addition, the saturation magnetization (Ms) increased from 0.0078 to 0.0088 emu/g with the annealing temperature increased from 600 to 700 °C.     

Pulsed-laser deposition of a Nd:KGd(WO4)2 waveguide in Ar and O2 environments

Thin-film Nd-doped potassium gadolinium tungstate (Nd:KGW or KGd(WO₄)₂) waveguides are deposited on (1102)sapphire or (100)YAG substrates by KrF laser ablation of potassium-rich ceramic targets in Ar and O₂. The dependence of the stoichiometry, crystallinity and waveguide properties of the films on the environmental gas pressure and substrate temperature is studied. Highly textured crystalline (110) KGW films are grown. An optical waveguide loss as low as 3 dB/cm is obtained for the films grown in Ar. The as-grown films are optically active. Upon annealing at 900 °C in air, the crystallinity and the properties of the emission spectra are dramatically improved. PACS 81.15.Fg; 42.70.Hj; 78.20.Ek     

Effect of sintering temperature on the structural, dielectric and ferroelectric properties of tungsten substituted SBT ceramics

Structural, dielectric and ferroelectric properties of tungsten (W) substituted SrBi₂(Ta_1−xW_x)₂O₉ (SBTW) [x=0.0, 0.025, 0.05, 0.075, 0.1 and 0.2] have been studied as a function of sintering temperature (1100-1250 °C). X-ray diffraction patterns confirm the single-phase layered perovskite structure formation up to x=0.05 at all sintering temperatures. The present study reveals an optimum sintering temperature of 1200 °C for the best properties of SBTW samples. Maximum T_c of ∼390 °C is observed for x=0.20 sample sintered at 1200 °C. Peak-dielectric constant (ε_r) increases from ∼270 to ∼700 on increasing x from 0.0 to 0.20 at 1200 °C sintering temperature. DC conductivity of the SBTW samples is nearly two to three orders lower than that of the pristine sample. Remnant polarization (P_r) increases with the W content up to x≤0.075. A maximum 2P_r (∼25 μC/cm²) is obtained with x=0.075 sample sintered at 1200 °C. The observed behavior is explained in terms of improved microstructural features, contribution from the oxygen and cationic vacancies in SBTW. Such tungsten substituted samples sintered at 1200 °C exhibiting enhanced dielectric and ferroelectric properties should be useful for memory applications.     

Impedance spectroscopy of carbon nanotube/solid polymer electrolyte composites

New composite polymer electrolytes (CPE) have been prepared by a solution-casting technique, using polyethylene oxide, lithium hexafluorate (LiPF₆) as the doping salt, ethylene carbonate (EC) as the plasticizer and amorphous carbon nanotubes (αCNTs) as the filler. The crystallinity and ionic conductivity of the CPE are examined. Differential scanning calorimetry shows a decrease in melting temperature and crystallinity upon the addition of LiPF₆, EC and αCNTs to the polymer electrolyte system. The addition of salt increases the conductivity up to 10⁻⁵ S cm⁻¹. The incorporation of EC and αCNTs into the salted polymer shows a significant conductivity increase of 10⁻⁴ and 10⁻³ S cm⁻¹. The complexation process is examined using Fourier transform infrared spectroscopy. The Vogel-Tamman-Fulcher (VTF) plots suggest that the temperature dependence of conductivity is a thermally activated process.     

Investigation on FR(LT)–FR(HT) phase transition and pyroelectric properties of pulsed laser deposited Pb(Zr0.93Ti0.07)O3 thin films

The preparation process, crystallinity and electrical properties of pulse laser deposited Pb(Zr_xTi_1−x)O₃ (PZT) thin films were investigated in this paper. PZT (x = 0.93) thin film samples deposited at different substrate temperatures were prepared. Si (1 1 0) was the substrate; Ag and YBCO were the top electrode and the bottom electrode respectively. The bottom electrode YBCO was deposited on the Si substrate by pulsed laser deposition (PLD), and then PZT was epitaxially deposited on YBCO also by PLD. After annealing, the top electrode Ag was prepared on PZT by thermal evaporation, and then the Ag/PZT/YBCO/Si structured thin films were obtained. The XRD and the analysis of their electrical characters showed that, when the substrate temperature was elevated from 600 °C to 800 °C, the crystallinity and electrical properties of PZT thin films became better and better, and the F_R(LT)–F_R(HT) phase transition of PZT (x = 0.93) thin films occurred at 62 °C. The PZT film deposited at 800 °C had the best pyroelectric properties, and when the F_R(LT)–F_R(HT) phase transition of this film occurred, the peak value of pyroelectric coefficient (p) was obtained, with a value of 1.96 × 10⁻⁶ C/(cm² K). The PZT film deposited at 800 °C had the highest remnant polarization (P_r) and the lowest coercive field (E_c), with the values of 34.3 μC/cm² and 41.7 kV/cm respectively.     

Wear behavior of sintered hexagonal boron nitride under atmosphere and water vapor ambiences

Hexagonal boron nitride was pressed and sintered at 2000 °C with CaB₂O₄ as an additive to promote its crystallization, which was used as an abradable sealing coating for aircraft turbo engines. Microstructures, phase compositions and tribological properties of the sintered hBN were tested, and the results show that CaB₂O₄ can effectively promote crystal growth of hBN at 2000 °C for 5 h in N₂ ambience. The friction coefficients of the sintered hBN under atmosphere ambience increase as the temperature increasing from room temperature to 400 °C, and then decrease with further increasing of temperature up to 800 °C. Under water vapor ambience, friction coefficients of the sintered hBN are much lower than those under atmosphere ambience, which are attributed to a lamella-slip of hBN and the solid lubrication effect of H₃BO₃.     

Flame Temperature Effect on the Structure of SiC Nanoparticles Grown by Laser Pyrolysis

Small SiC nanoparticles (10 nm diameter) have been grown in a flow reactor by CO₂ laser pyrolysis from a C₂H₂ and SiH₄ mixture. The laser radiation is strongly absorbed by SiH₄ vibration. The energy is transferred to the reactive medium and leads to the dissociation of molecules and the subsequent growth of the nanoparticles. The reaction happens with a flame. The purpose of the experiments reported in this paper is to limit the size of the growing particles to the nanometric scale for which specific properties are expected to appear. Therefore the effects of experimental parameters on the structure and chemical composition of nanoparticles have been investigated. For a given reactive mixture and gas velocity, the flame temperature is governed by the laser power. In this study, the temperature was varied from 875°C to 1100°C. The chemical analysis of the products indicate that their composition is a function of the temperature. For the same C/Si atomic ratio in the gaseous phase, the C/Si ratio in the powder increases from 0.7 at 875°C up to 1.02 at 1100°C, indicating a growth mechanism limited by C₂H₂ dissociation. As expected, X-ray diffraction has shown an improved crystallisation with increasing temperature. Transmission electron microscopy observations have revealed the formation of 10 nm grains for all values of laser power (or flame temperature). These grains appear amorphous at low temperature, whereas they contain an increasing number of nanocrystals (2 nm diameter) when the temperature increases. These results pave the way to a better control of the structure and chemical composition of laser synthesised SiC nanoparticles in the 10 nm range.     

Thermoluminescent and stuctural properties of BaAl2O4:Eu,Nd,Gdphosphors prepared by combustion method

BaAl₂O₄:Eu²⁺,Nd³⁺,Gd³⁺ phosphors were prepared by a combustion method at different initiating temperatures (400–1200 °C), using urea as a comburent. The powders were annealed at different temperatures in the range of 400–1100 °C for 3 h. X-ray diffraction data show that the crystallinity of the BaAl₂O₄ structure greatly improved with increasing annealing temperature. Blue-green photoluminescence, with persistent/long afterglow, was observed at 498 nm. This emission was attributed to the 4f⁶5d¹–4f⁷ transitions of Eu²⁺ ions. The phosphorescence decay curves were obtained by irradiating the samples with a 365 nm UV light. The glow curves of the as-prepared and the annealed samples were investigated in this study. The thermoluminescent (TL) glow peaks of the samples prepared at 600 °C and 1200 °C were both stable at ∼72 °C suggesting that the traps responsible for the bands were fixed at this position irrespective of annealing temperature. These bands are at a similar position, which suggests that the traps responsible for these bands are similar. The rate of decay of the sample annealed at 600 °C was faster than that of the sample prepared at 1200 °C.