Optical spectroscopy of a-plane-oriented ZnO epilayers grown by plasma-assisted molecular beam epitaxy

a-plane ZnO layers were successfully grown, by plasma-assisted molecular beam epitaxy, on r-plane (011–2) sapphire substrates. Several features attributed to the A, B and C free excitonic transitions are identified through temperature-dependent photoluminescence (PL) and reflectivity measurements. The temperature dependence of the peak energy positions of these transitions was studied from 8 K to 300 K. So, the PL peak energy of the A free exciton was plotted and fitted with a Varshni empirical equation. In the σ polarization (E⊥c), for which A and B are allowed, the reflectivity spectrum measured at 8 K was fitted by using a program based on the theory of the spatial resonance dispersion Hopfield model. Our results indicate that the A and B free excitonic features are at a higher energy than those in ZnO on c-oriented sapphire and show a good PL even at 250 K. These results also show that the new and intense emission peak observed in the region of the first phonon replica (3.33–3.28 eV) and identified as a stacking fault in the epilayer disappears at high temperature above 150 K.     

Electron transport in high quality undoped ZnO film grown by plasma-assisted molecular beam epitaxy

High quality ZnO films were grown on c-plane sapphire substrate using low temperature ZnO buffer layer by plasma-assisted molecular beam epitaxy. The film deposited at 720 °C showed the lowest value of full-width at half maximum for the symmetric (0002) diffraction peak of about 86 arcsec. The highest electron mobility in the films was about 103-105 cm²/V s. From temperature-dependent Hall effect measurements, the mobility strongly depends on the dislocation density at low temperature region and the polar optical phonon scattering at high temperature, respectively. Moreover, by obtaining the activation energy of the shallow donors, it was supposed that hydrogen was source of n-type conductivity in as-grown ZnO films.     

Growth of vertically aligned single crystal ZnO nanotubes by plasma-molecular beam epitaxy

Highly oriented and vertically aligned single crystalline ZnO nanotubes were fabricated on Al₂O₃ (0001) substrates by plasma-molecular beam epitaxy without employing any external metal catalysts or templates. Field emission scanning electron microscope images indicate that the regularly aligned ZnO nanotubes with uniform size distribution were obtained. The chimney-like single crystal ZnO nanotube was confirmed by the transmission electron microscope and selected area electron diffraction pattern of the single nanotube. The formation mechanism of the nanotubes was also described briefly.     

Photoluminescence properties of p-type InGaAsN grown by RF plasma-assisted molecular beam epitaxy

We have investigated the photoluminescence (PL) properties of p-type InGaAsN epilayers grown by a radio frequency (RF) plasma-assisted nitrogen source in a molecular beam epitaxy (MBE) system. The low temperature PL spectra exhibited both a LE emission peak at around 1000 nm and a broad deep band at 1200–1700 nm. As temperature increases, the LE peak position redshifts and its intensity becomes weaker and disappears at 100 K. The deep PL band may originate from recombinations associated with N-related traps. The hole concentration dependence of the integrated intensity ratio of the LE emission peak to the deep PL band at 5 K can be separated into two doping regimes. At light doping regime (1.0×10¹⁶ cm^-318 cm^-3), this ratio is linearly proportional to the hole concentration and is explained in terms of neutral-acceptor-bound excitons. At high doping regime (2.1×10¹⁸ cm^-319 cm^-3), the LE emission could possibly originate from mechanisms arising from hole degeneracy. This intensity ratio saturates at high doping regime. PACS 68.55.Ln; 81.05.Ea; 78.55.Cr     

Growth of InN thin films on ZnO substrate by plasma-assisted molecular beam epitaxy

We have studied the microstructure property of InN epitaxial films grown on ZnO substrate by plasma-assisted molecular beam epitaxy. We found that the In₂O₃ compound was produced on ZnO substrate and many pits were formed on the InN films when InN was directly grown on ZnO substrate with the N/In flux ratio less than 40. We demonstrated that the quality of InN film was significantly improved when the In₂O₃ layer was used as a buffer to prevent the reaction between In and the ZnO substrate.     

Optical properties and structural characteristics of ZnO thin films grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

We investigated structural and optical properties of ZnO thin films grown on (112?0) a-plane sapphire substrates using plasma-assisted molecular beam epitaxy. Negligible biaxial stress in ZnO thin films is due to the use of (112?0) a-plane sapphire substrates and slow substrate cooling. The 14 K photoluminescence spectrum shows a blueshift of energy positions compared with ZnO single crystal. A donor with binding energy of 43 meV and an acceptor with binding energy of ～170 meV are identified by well-resolved photoluminescence spectra. A characteristic emission band at 3.320 eV (so-called A-line) is studied. Based on analysis from photoluminescence spectra, the origin of the A-line, it seems, is more likely an (e, A°) transition, in which defect behaves as an acceptor. The room-temperature photoluminescence is dominated by the FX at 3.307 eV, which is an indication of strongly reduced defect density in ZnO thin films.     

Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy

We report a study of the annealing temperature and time on Ag catalyst size and density for subsequent growth of ZnO nanorods by catalyst-driven molecular beam epitaxy (MBE). Two different substrates (SiO₂ and SiN_X) for the Ag deposition were used and the thickness of the Ag held constant at 25 Å. Annealing between 600 and 800 °C produced Ag cluster sizes in the range 8-30 nm diameter on SiO₂ and 10-65 nm on SiN_X with a cluster density from 100 to 2500 mm⁻² for SiO₂ and 30 to 1900 mm⁻² for SiN_X. ZnO nanorods grown on these clusters show single-crystal, wurtzite-phase nature and strong band-edge photoluminescence at 380 nm. The nanorods can also be grown selectively on lithographically-patterned dielectric stripes with Ag clusters formed on top by e-beam evaporation and annealing.     

Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy

Positron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 1-2 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the electrical compensation. Annealings at low temperatures of 400-500 K convert the defects to larger complexes where the open volume is neighbored by 2-3 Sb atoms. This behavior is attributed to the migration of vacancy-Sb pairs and demonstrates at atomic level the metastability of the material grown by epitaxy at low temperature.     

Electrical and optical properties of ZnO films grown by molecular beam epitaxy

Zinc oxide (ZnO) films have been grown on sapphire by molecular beam epitaxy (MBE), and it is found that the grain size of the ZnO films increased with increasing the growth temperature. Photoluminescence (PL) study shows that the intensity ratio of near-band-edge emission to deep-level-related emission (NBE/DL) of the ZnO is significantly enhanced with increasing the growth temperature, and the dependence of the carrier mobility on the growth temperature shows very similar trend, which implies that there is a community factor that determines the optical and electrical properties of ZnO, and this factor is suggested to be the grain boundary. The results obtained in this paper reveal that by reducing the grain boundaries, ZnO films with high optical and electrical properties may be acquired.     

Free-standing and vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy

Metalorganic vapor phase epitaxial technique has been used to grow surface mounted vertical and uniform cross-sectional InP nanowires on a wafer scale basis. The growth was carried out under the vapor–liquid–solid mechanism using Au colloidal nanoparticles of nominal diameters of 10 and 20 nm, and their properties were compared. The effect of the pre-growth anneals and growth temperatures on the stability of the nanowires were studied in detail. Scanning electron microscopy and transmission electron microscopic studies showed average diameter of the nanowires in the range of 20–35 nm, and of length 700 nm with growth direction of 1 1 1. Room temperature photoluminescence measurements of the nanowires grown on 10 and 20 nm Au particles showed strong peaks, which were blue shifted by 25 and 32 meV, respectively, compared to bulk InP.     

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15V 0.6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm 2 , respectively.     

X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy

We have studied on the polarity selection procedure of ZnO grown on CrN buffer by using X-ray photoelectron spectroscopy (XPS). XPS studies have been performed on the O- and Zn-treated CrN/Al₂O₃surfaces and revealed that Cr₂O₃ and Zn-chromate-like structures are formed on O- and Zn-treated CrN surfaces, respectively. The polarity selection procedure is explained in terms of the variation of bonding coordination by the formation of ZnO on the topmost O- and Zn-atoms of each surface.     

Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

In this paper,the effects of thickness of AlN nucleation layer grown at high temperature on AlN epi-layer crystalline quality are investigated.Crack-free AlN samples with various nucleation thicknesses are grown on sapphire substrates by plasma-assisted molecular beam epitaxy.The AlN crystalline quality is analysed by transmission electron microscope and x-ray diffraction (XRD) rocking curves in both (002) and (102) planes.The surface profiles of nucleation layer with different thicknesses after in-situ annealing are also analysed by atomic force microscope.A critical nucleation thickness for realising high quality AlN films is found.When the nucleation thickness is above a certain value,the (102) XRD full width at half maximum (FWHM) of AlN bulk increases with nucleation thickness increasing,whereas the (002) XRD FWHM shows an opposite trend.These phenomena can be attributed to the characteristics of nucleation islands and the evolution of crystal grains during AlN main layer growth.     

Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO

ZnO is a wide band gap, naturally n-type semiconductor with great promise for optoelectronic applications; the main obstacle yet to be overcome is p-type doping. Nitrogen, the most promising candidate currently being pursued as a dopant, has been predicted to preferentially incorporate into the ZnO lattice in the form of a N-2 molecule at an O site when a plasma source is used, leading to compensation rather than p-type doping. We demonstrate this to be incorrect by using N K-edge x-ray absorption spectra and comparing them with first-principles calculations showing that nitrogen, in fact, incorporates substitutionally at O sites where it is expected to act as an acceptor. We also detect the formation of molecular nitrogen upon annealing. These results suggest that effective p-type doping of ZnO with N may be possible only for low-temperature growth processes.     

HgTe/CdTe superlattices grown by molecular beam epitaxy

In this paper we present results concerning the optical absorption in HgTe-CdTe superlattices. We confirm the narrowing of the superlattice band-gap (the increase of cut-off wavelength, λ_c) compared to the band gap of the equivalent Hg_1?xCd_xTe alloy. We show also, as predicted by the theory, an increase of the cut-off wavelength of the superlattice when the HgTe layer thickness increases. At 300K, the agreement between theory and experiment is fairly good if we consider the onset of the absorption. The λ_c tail shifting towards shorter wavelengths could be explained by the interdiffusion between HgTe and CdTe layers. At 30K, no important change in the I.R. absorption is noticed for all the superlattices.We present for the first time a superlattice exhibiting an absorption in the 8–12 μm window.We have carried out Hall measurements on several superlattices and present for the first time transport properties on these alternate microstructures. The most important features concern the unexpected and not yet understood very high hole mobilities at 10K.     

Surface morphology of highly mismatched InSb films grown on GaAs substrates by molecular beam epitaxy

InSb films on GaAs(001) substrates with and without GaAs buffer layer have been grown by molecular beam epitaxy. Rather than surface undulations, aligned ripples and pyramidal hillocks along the orthogonal 〈110〉 directions were observed on the surface of InSb films. Both the preferential growth and the termination of ripples were proved to be related to strain‐driven mass transport. A model was proposed to elucidate the formation of the hillocks, which are more efficient to relax strain than ripples. Due to the strain relaxation through hillocks with small bases predominantly, the surfaces of the InSb films grown without a GaAs buffer layer are smoother than those of films grown with a GaAs buffer layer. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Tunable and reversible surface wettability transition of vertically aligned ZnO nanorod arrays

Vertically aligned zinc oxide (ZnO) nanorods (NRs) with different surface morphology were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate. To study the effect of surface morphology on wettability, the contact angle (CA) of water was measured. It was demonstrated that the CA of the deposited ZnO NRs varied between 104° and 135° depending upon the surface morphology. The ZnO NRs became super-hydrophilic after ultraviolet (UV) illumination. However, the NR arrays were reconverted to their previous hydrophobic state after low temperature annealing (50 °C) in open atmosphere. Structural effect and preferential adsorption of water molecules on the defective sites of UV illuminated surface was used to explain the transition mechanism. Under the alternations of heat treatment and UV illumination, a reversible transition between hydrophobicity and super-hydrophilicity were observed.     

One step synthesis of vertically aligned ZnO nanowire arrays with tunable length

Length control of ZnO nanowire arrays is a valuable concern for both fundamental research and future device application. In this article, vertically aligned ZnO nanowire arrays were synthesized by a seed layer catalyzed vapor phase transport method in a single experiment cycle. The length of these nanowire arrays exhibits a quasi-continuous evolution. It was found that the type and flow rate of carrier gas have a significant influence on the length modulation of ZnO arrays along the tube. A feasible route to tune the length of ZnO nanowire arrays from several micrometers to nearly 100 μm could be achieved by adjusting proper deposition position and carrier gas.     

Coevaporation phosphorus doping in Si grown by molecular beam epitaxy

Phosphorus-doped Si epilayers with bulk-like mobilities were grown by molecular beam epitaxy (Si-MBE) by coevaporation of phosphorus from a tin phosphide source. The behaviour of P doping as a function of growth parameters and of potential enhanced doping indicates a non-unity, almost growth-temperature independent incorporation efficiency with negligible surface segregation -a unique combination among coevaporated dopants in Si-MBE.