Microstrip notch filters based on open interconnected split ring resonators (OISRRs)

Two kinds of inorganic/organic hybrid junctions based on ZnO nanorods (NRs), i.e. two-layer planar heterojunction and embedded bulk composite structures, were fabricated on ITO glass substrates. Surface photovoltage (SPV) methods based on a Kelvin probe and a lock-in amplifier were respectively utilized to study the photogenerated charges at the surface and the interface in the ZnO-based hybrid junctions. Results indicate that the lock-in SPV response of the bulk composite structure is much higher than its planar counterpart in terms of intensity and spectral range. Therefore, ZnO NR/PF (poly(9,9-di-n-octylfluorenyl-2,7-diyl)) embedded bulk composite structures are more suitable and preferred for photovoltaic application.     

Effect of the optical excitation signal intensity on the impulse response of a metal-semiconductor-metal photodiode

The effect of the optical excitation signal intensity on the impulse response of a photodetector based on a set of metal-semiconductor-metal (MSM) rectifier contacts is studied. The response of the detector is better at a low optical excitation signal. When the energy of an optical excitation pulse is high, the response can be improved by increasing the bias voltage. The advantages of a GaN-based MSM diode in detecting high- energy radiation pulses are established. It is shown that the speed of the GaN-based MSM detector may reach 25 ps for a 60-pJ optical excitation pulse at a wavelength of 290 nm.     

Z型InN/SnS2范德华异质结增强光催化水分解

寻找高效的光催化剂分解水制氢是解决能源危机和环境问题的有效途径之一.基于第一性原理,对InN/SnS₂异质结的几何结构、电子结构和光催化水分解性能进行研究.结果表明InN/SnS₂异质结是具有的Ⅱ型能带排列半导体材料可以有效地分离电子空穴对.在光激发下,较小的带隙以及合适的内建电场使得光生载流子迁移路径成“Z”字型,这保留了InN/SnS₂异质结强氧化还原能力.光生电子在InN的导带底累积并发生析氢反应,而积累在SnS₂上的光生空穴使析氧反应自发发生.它们的带边位置都跨越了水的氧化还原电位,证明能够实现水的完全分解.因此,InN/SnS₂异质结有希望成为高效光解水催化剂.     

利用C_(60)和CuPc形成的有机半导体异质结作为阳极修饰层实现高效的磷光有机发光二极管

利用C_(60)和Cu Pc形成有机半导体异质结作为阳极ITO修饰层,制备了高效绿色磷光有机发光二极管(OLEDs)。与常规MoO_3阳极修饰层相比,C_(60)(5 nm)/Cu Pc(25 nm)面异质结修饰器件的最大电流效率和外量子效率(EQE)提高了12%和11%,分别为60 cd/A和16.8%;而Cu Pc∶C_(60)(30 nm,50%)体异质结修饰器件则提高了26%和27%,分别为67 cd/A和19.3%。高的器件效率一方面归因于C_(60)与Cu Pc异质结界面处积累的电荷会在电压的作用下形成高效的电荷分离和空穴注入,另一方面归因于异质结具有吸收绿光光子形成光生载流子的光伏效应。利用Cu Pc∶C_(60)体异质结修饰阳极的器件由于具有更高效的电荷积累、更合适的空穴传输性、更平衡的载流子复合和更好的光伏特性,器件效率要比C_(60)/Cu Pc更优。研究表明,这种基于C_(60)与Cu Pc的有机半导体异质结可作为优越的ITO阳极修饰层。     

Investigation of threshold switching mechanism based on Mn-doped ZnO/GaN heterojunction by photogenerated carrier injection

Highly c-axis oriented ZnO thin films have been prepared on n-type GaN-coated sapphire substrates by radio frequency reactive magnetron sputtering at 100 °C followed by thermal annealing at 740 °C for 2 h. The ZnO/GaN heterojunction devices show a steady threshold switching (TS) characteristic. In addition, Mn-doped ZnO (MZO)/GaN heterojunction has been prepared and it shows lower threshold voltage and higher on/off ratio than those of ZnO/GaN heterojunction. The formation of TS characteristic may be attributed to trapping and detrapping of electrons in heterojunction device. Furthermore, the devices are investigated by the injection of photogenerated carriers, it is illustrated that the external carrier injection may affect the rate of the trapping of electrons and results in the decrease of the threshold voltage.     

n-ZnO/i-MgO/p-GaN异质结发光二极管

用等离子体辅助分子束外延的方法生长了n-ZnO/i-MgO/p-GaN异质结发光二极管。I-V测量表明其具有典型的二极管整流特性。电致发光峰位于382nm,通过与n型ZnO和p型GaN的光致发光谱比较,其发光峰位与线形都与ZnO的自由激子发射一致,表明该电致发光来自于ZnO的自由激子发射。通过Anderson模型比较了n-ZnO/i-MgO/p-GaN和n-ZnO/p-GaN异质结的能带示意图,证明了由于MgO层的插入抑制了ZnO向GaN层中的电子注入,且有利于空穴向ZnO层注入,从而实现了ZnO层中的电注入发光。     

High speed switching and power dissipation in heterojunction double barrier diodes

A theoretical analysis of the dynamical aspects of high speed switching between different stable states in bistable circuits containing quantum well devices with negative differential resistance is presented. A variational calculus method is introduced to obtain the minimal energy dissipation required for a given switching time. Results are presented for individual heterojunction double barrier diode and for pairs of heterojunction double barrier diodes which are connected in series.     

Features of the reverse current of a semiconductor diode with an isotypic heterojunction in the base region

The reverse current of a semiconductor diode with an isotype heterojunction in the base region with the wideband part of the junction adjoining the ohmic contact has been calculated. The dependence of the reverse current on the heterojunction position and parameters has been revealed and analyzed. It has been shown for such a diode that the reverse current associated with thermal generation of charge carriers both in the base region and at the contact can be reduced substantially. Institute of Applied Physics of the I. Franko National University of Lvov. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 19–23, July, 2000.     

磷烯基二维范德瓦尔斯异质结的理论表征

本文基于单层黑磷和蓝磷,理论设计出二维范德瓦尔斯异质结、能带结构、态密度、Bader电荷布局、电荷密度差分图及光吸收谱等,计算结果表明它是典型的第二型异质结,有利于光生载流子分离,且可见光捕获能力显著增强.内禀的界面极化电场能有效阻止光生电子-空穴的复合.表明磷烯基二维范德瓦尔斯异质结是一类性能优异的光解水催化剂.     

A field-effect WSe2/Si heterojunction diode

It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional (2D) materials in silicon roadmap. In this paper, we reported a field-effect WSe₂/Si heterojunction diode based on ambipolar 2D WSe₂ and silicon on insulator (SOI). Our results indicate that the device exhibits a p-n diode behavior with a rectifying ratio of ～ 300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10¹⁰ Jones and external quantum efficiency (EQE) of 8.9 %. Due to the ambipolar behavior of the WSe₂, the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.     

Tunnel injection transistor laser for optical interconnects

Transistor laser (TL) is already an established potential candidate for high speed optical interconnects and present day optical communication networks. This paper investigates theoretically the possibility of having lower base threshold current density and enhanced modulation bandwidth by inserting a tunnel injection structure in a TL having multiple quantum wells (MQW) in the base of the heterojunction bipolar transistor. Transfer of injected charge carriers from bulk to low dimensional nano-structure is assumed to occur via virtual energy states, which contributes to the terminal current. Small signal modulation response is obtained by solving the Statz–De Mars laser rate equations. The optimum threshold base current, confinement of carrier, light power outputs etc. are estimated for three QWs positioned at distances of 39, 59, and 79 nm from the emitter-base junction across the base. Incorporation of tunneling structure substantially lowers the base threshold current and increases the modulation bandwidth as compared to usual MQW transistor laser structure. The changes are more prominent with increasing tunneling probability.     

Different approaches to adjusting band offsets at intermolecular interfaces

We show that at the hetero-molecular interface, the molecular band offsets can be modified by either adjusting the dopant or dopant concentration of one or both molecular layers or by changing the dipole orientation at the intermolecular interface. Photoemission studies reveal the changes in electronic structure and diode devices exhibit conduction properties that are altered in response to changes to the molecular band offsets. As a demonstration, thin film copper phthalocyanine to crystalline ferroelectric copolymer poly(vinylidene fluoride with trifluoroethylene) heterojunction diodes, without additional dopants, are compared with doped polyaniline layers on the crystalline ferroelectric copolymer poly(vinylidene fluoride with trifluoroethylene).     

Double heterojunction lasers and quantum well lasers

The improved technology of compound semiconductor heterojunction preparation has resulted in very reliable CW, room temperature diode lasers for optical information read-out grown on p-type substrates on the one hand and very abrupt double heterojunction diode lasers based on quantum effects on the other hand. The influence of quantization effects on the emission wavelength, the threshold current and its temperature dependence are discussed. A distinction has been made between quantization due to strong magnetic fields giving rise to a one-dimensional electron gas (quantum wire) and quantization resulting from electrostatic and/or compositional changes (quantum well). The double heterojunction as a test structure to study carrier scattering into quantum wells, the phonon participation in the hot carrier relaxation process and optical flux guiding in graded heterojunctions have been emphasized.     

Certain properties of controllable heterojunction structures

Conclusions We synthesized Si-SnO₂ heterojunctions in planar structures, whose geometry was chosen to allow modulation of the conductivity and capacitance of one of the heterojunctions by changing the state of another controlling heterojunction.Analysis of the current-voltage characteristics shows that the current of a reverse-biased Si-SnO₂ heterojunction can be controlled by changing the free-carrier concentration in the conduction band of the SnO₂ film within the effective range of this heterojunction.Analysis of the voltage-capacitance characteristics shows that the capacitance of one heterojunction can be controlled by changing the current through another, nearby heterojunction, through a redistribution of charge carriers near the controlled heterojunction.Translated from Izvestiya VUZ. Fizika, No. 7, pp. 124–125, July, 1970.     

A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction

A photodiode was fabricated based on well-aligned ZnO nanowire arrays (ZNAs) and regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid heterojunction. The current–voltage (I–V) characteristics of ITO/ZNAs/P3HT/Ag device in the dark and under illumination with a solar simulator were investigated in detail. The results demonstrated that the device showed good diode characteristics in the dark and under illumination. The device exhibited a high rectification ratio (RR) of 3211 at 2 V and a low turn-on voltage of 0.5 V in the dark. Also, the RR of the device as a function of illumination intensity was observed, and the transportation process of charge carriers in the diode under illumination was illuminated in terms of energy band diagram.     

光照下高电子迁移率晶体管特性分析

以光照下耗尽型AlGaAs/GaAs高电子迁移率晶体管为例,考虑了光生载流子对半导体内电荷密度的影响和光压效应,采用器件的电荷控制模型,分析了光照对器件夹断电压、二维电子气浓度、I-V特性以及跨导的影响.与无光照的情况相比较,夹断电压变小,二维电子气浓度 增大,从而提高了器件的电流增益,增大了跨导.     

基于标准CMOS工艺的UV/blue光电探测器

基于UMC 0.18μm CMOS工艺,提出一种适合紫外/蓝光探测的探测器,该器件由栅体互联的NMOS晶体管和横向/纵向光电二极管构成.其中,浅结的光电二极管由UMC工艺中Twell层(浅P阱)和Nwell层形成,以增强其对紫外/蓝光的吸收,栅体互联的NMOS晶体管可以放大光电流,提高探测器的灵敏度和动态范围.仿真结果表明,本文设计的紫外/蓝光探测器具有低的工作电压和暗电流,对300~550nm波长范围的光具有高的响应度和宽的动态范围.在弱光条件下(光强小于1μW/cm2),响应度优于105 A/W,随着光强增大,响应度逐渐降低,但总体仍超过103 A/W.     

Application of low-barrier metal-semiconductor-metal structures for the detection of microwave signals

New structures of sensitive elements based on asymmetric low-barrier metal-semiconductormetal structures are proposed. The structures can be used for the detection of microwave or terahertz signals. A vertical structure with different barrier heights of two metal-semiconductor junctions and a planar structure with different areas of junctions are studied. It is demonstrated that the sensitive element based on the vertical structure is superior to a detecting low-barrier Mott diode. The sensitivity of the planar element is comparable with the sensitivity of the diode but the former is easier to produce. The characteristics of a detector based on the planar low-barrier structure integrated in a broadband antenna are calculated. Possible sensitivities in a band of 1 THz are determined.     

InGaAs-MSM光电探测器设计与仿真研究

对基于InGaAs材料体系的金属 半导体 金属（metal semiconductor metal,MSM）光电探测器进行设计,并对其暗电流、光电流、电容以及截止频率等性能参数进行仿真。通过添加InAlAs肖特基势垒增强层,将探测器的暗电流减小到了pA量级。仿真结果表明,探测器在光照下有明显的光响应,通过合理设计器件结构,探测器的工作频率可以达到1.5 THz。制备了探测器样品,并对其暗电流和光响应进行了测试,测试结果与仿真结果基本吻合。     

Polymer heterostructures with embedded carbon nanotubes for efficient photovoltaic cells

Polymer photovoltaic cells (PVC) are intensely investigated because of their potential advantages over Si-based PVCs. Their present drawbacks are low conversion efficiency, limited exciton diffusion length, poor hole carriers transport and short lifetime. The highest conversion efficiency achieved so far in spin-coated polymer blends is close to 5%. Recently, efficiency growing has been demonstrated in multilayer architectures involving a donor/acceptor bulk heterojunction. Alternatively, a nanomaterial has been added to the polymer active layer to facilitate excitons dissociation and carriers transport through the polymer matrix. In this work we investigate both these approaches, first embedding single wall Carbon Nanotubes (SWCNT) in the polymeric matrix to improve the electrical transport and second studying the optical absorption of different polymer thin films to optimize the spectral response of the donor/acceptor heterojunction.