Electron–Nuclear Spin Dynamics in Semiconductor QDs

This work presents an overview of investigations of the nuclear spin dynamics in nanostructures with negatively charged InGaAs/GaAs quantum dots characterized by strong quadrupole splitting of nuclear spin sublevels. The main method of the investigations is the experimental measurements and the theoretical analysis of the photoluminescence polarization as a function of the transverse magnetic field (effect Hanle). The dependence of the Hanle curve profile on the temporal protocol of optical excitation is examined. Experimental data are analyzed using an original approach based on separate consideration of behavior of the longitudinal and transverse components of the nuclear polarization. The rise and decay times of each component of the nuclear polarization and their dependence on transverse magnetic field strength are determined. To study the role of the Knight field in the dynamic of nuclear polarization, a weak additional magnetic field parallel to the optical axis is used. We have found that, only taking into account the nuclear spin fluctuations, we can accurately describe the measured Hanle curves and evaluate the parameters of the electron–nuclear spin system in the studied quantum dots. A new effect of the resonant optical pumping of nuclear spin polarization in an ensemble of the singly charged (In,Ga)As/GaAs quantum dots subjected to a transverse magnetic field is discussed. Nuclear spin resonances for all isotopes in the quantum dots are detected in that way. In particular, transitions between the states split off from the ±1/2 doublets by the nuclear quadrupole interaction are identified.     

Angular dependence of shot noise in the presence of Rashba spin–orbit coupling in semiconductor spintronics junctions

We investigate spin-dependent current and shot noise, taking into account the Rashba spin–orbit coupling (RSOC) effect in double diluted magnetic semiconductor (DMS) barrier resonant tunneling diodes. The calculation is based on an effective mass approach. The magnetization of DMS is calculated by the mean-field approximation in low magnetic field. The spin-splitting of DMS depends on the sp–d exchange interaction. We also examine the dependence of transport properties of CdTe/CdMnTe heterostructures on applied voltage and relative angle between the magnetization of two DMS layers. It is found that the RSOC has great different influence on the transport properties of tunneling electrons with spin-up and spin-down, which have different contributions to the current and the shot noise. Also, we can see that the RSOC enhances the spin polarization of the system, which makes the nanostructure a good candidate for new spin filter devices. Thus, these numerical results may shed light on the next applications of quantum multilayer systems and make them a good choice for future spintronics devices.     

The direct exchange interaction for weakly delocalized multielectron systems in crystals

The multielectron theory of exchange interactions taking into account both electrostatic interactions between electrons (“potential” exchange) and electron transfer between magnetic centers (“kinetic” exchange) has been developed on the basis of Bogolubov's procedure using double irreducible operators. The final hamiltonian contains a number of isotropic and anisotropic terms. The exchange interaction parameter variations with the distance have been calculated. The terms determining the dependence on the occupancy of magnetic shells are shown to be of the same order of magnitude as the “potential” exchange and two orders of magnitude less than the “kinetic” exchange. It is shown that in the model adopted the mechanisms of direct exchange interactions always favour the antiferromagnetic spin ordering     

Dynamic Nuclear Polarization in III–V Semiconductors

We report on electron spin resonance, nuclear magnetic resonance and Overhauser shift experiments on two of the most commonly used III–V semiconductors, GaAs and InP. Localized electron centers in these semiconductors have extended wavefunctions and exhibit strong electron–nuclear hyperfine coupling with the nuclei in their vicinity. These interactions not only play a critical role in electron and nuclear spin relaxation mechanisms, but also result in transfer of spin polarization from the electron spin system to the nuclear spin system. This transfer of polarization, known as dynamic nuclear polarization (DNP), may result in an enhancement of the nuclear spin polarization by several orders of magnitude under suitable conditions. We determine the critical range of doping concentration and temperature conducive to DNP effects by studying these semiconductors with varying doping concentration in a wide temperature range. We show that the electron spin system in undoped InP exhibits electric current-induced spin polarization. This is consistent with model predictions in zinc-blende semiconductors with strong spin–orbit effects.     

Temperature dependence of magnetocurrent in spin-valve transistor: a phenomenological study

The temperature dependence of magnetocurrent in the spin-valve transistor has been theoretically explored based on phenomenological model. We find that temperature dependence of the collector current strongly depends on the relative orientation of magnetic moment of ferromagnetic metals due to spin mixing effect. For example, the parallel collector current is decreasing with increasing temperatures, while the anti-parallel collector current is increasing. We then obtain decreasing magnetocurrent with increasing temperatures. The result accords with the experimental data in qualitative manner. Along with this, we find that temperature dependence of hot electron spin polarization can also contribute to the magnetocurrent at finite temperatures. This phenomenological model calculations suggest that it is essential to understand the relative importance of spin mixing effect and hot electron spin polarization in the spin-valve transistor at finite temperatures.     

Spin polarization of electrons in a magnetic impurity doped semiconductor quantum dot – The effect of electron–phonon interaction

A theoretical model is presented in this paper for degree of spin polarization in a light emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different temperatures and magnetic fields. It is found that magnetic impurity increases the degree of spin polarization irrespective of temperature, while the electron–phonon interaction decreases the degree of spin polarization. Results are found to be in better agreement with experiments.     

Dynamical Theory of X-Ray Diffraction for Restricted Beams: I. Coherent Scattering by a Porous Crystal

The processes of electron spin dynamics in a hybrid nonresonance structure, which includes a layer of a diluted magnetic II–Mn–VI semiconductor and an asymmetric quantum well (QW) of a nonmagnetic III–V semiconductor, are experimentally studied. The nonresonance of the structure is determined by the fact that the level of the ground state of the magnetic layer falls into the range of the excited states of the nonmagnetic QW. The electron polarization in the ground thermalized state of QW is found not to depend on the magnetic part of the structure. However, the magnetic part affects the electron polarization in the excited state via spin injection from the magnetic semiconductor and the mixing of the electronic states of the magnetic and nonmagnetic subsystems of the structure. The possibility of controlling the polarization of an electron spin by carrier excitation toward the region of mixed states along with the absence of depolarizing influence of the magnetic semiconductor on carriers in the thermalized state of QW can be applied to design new spintronic devices along with those that use spin injection, optical orientation, and depolarization.     

The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic（FM/OSC/FM） system

From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm’s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.     

Generating spin currents in semiconductors with the spin Hall effect

We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.     

Negative Differential Resistance and Other Features of Spin-Dependent Electron Transport in Double-Barrier Hybrid Superconductor–Ferromagnetic Metal–Normal Metal Structures

Spin-dependent electronic transport is theoretically investigated for double-barrier hybrid structures S–IF–F–IF–N and S–IF–N–IF–N, where S is a superconductor; F and N are ferromagnetic and normal metals, respectively; and IF is the spin-active barrier. It is shown that in the case of strong superconducting proximity effect and sufficiently thin F layers, the differential resistance of such structures can become negative at some voltages, and the voltage dependence of the current can have an N-shaped form. Characteristic feature of the differential resistance is its asymmetric dependence on voltage, which is most clearly manifested at strong polarization of at least one of the barriers. The influence of impurity spin–orbit scattering processes in the N-layer located between the barriers is investigated. The study was carried out for the case of diffusion electron transport.     

Spin polarization of two-dimensional electron system in different Laughlin states and around filling factor

The spin configuration of the ground state of a two-dimensional electron system is investigated for different FQHE states from an analysis of circular polarization of time-resolved luminescence. The method clearly distinguishes between fully spin polarized, partially spin polarized and spin unpolarized FQHE ground states. We demonstrate that FQHE states which are spin unpolarized or partially polarized at low magnetic fields become fully spin polarized at high fields. Temperature dependence of the spin polarization reveals a nonmonotonic behavior at . At and the electron system is found to be fully spin polarized. This result does not indicate the existence of any skyrmionic excitations in high magnetic field limit. However, at the observed spin depolarization of electron system at and becomes broader for lower magnetic fields, so that full spin polarization remains only in a small vicinity of . Such a behavior could be considered as a precursor of skirmionic depolarization, which would dominate for smaller ratios between Zeeman and Coulomb energies.We demonstrate that the spin polarization of 2D-electron system at and can be strongly affected by hyperfine interaction between electrons and optically spin-oriented nuclears. This result is due to the fact that hyperfine interaction can both enhance and suppress effective Zeeman splitting in fixed external magnetic field.     

Thermally induced spin polarization and thermal conductivities in a spin–orbit-coupled two-dimensional electron gas

The thermal conductivities and spin polarization induced by the temperature gradient are investigated in a Rashba spin–orbit-coupled two-dimensional electron gas. In this spin–orbit-coupled system in the presence of nonmagnetic or magnetic electron–impurity scattering, the Wiedemann–Franz law still holds. However, the spin polarization induced by the temperature gradient strongly depends on the property of impurities. The components of spin accumulation both perpendicular and parallel to the direction of the temperature gradient, and the thermally induced charge Hall conductivity may be nonzero for magnetic disorders.     

Detecting spin-polarized currents in ballistic nanostructures

We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in a large in-plane magnetic field to be measured. A transverse electron focusing geometry is used to couple current from an emitter point contact into a collector point contact. At large in-plane fields, with the point contacts biased to transmit only a single spin (g70% are found for both emitter and collector at 300 mK and 7 T in-plane field.     

Voltage-tunable spin electron beam splitter based on antiparallel double δ-magnetic-barrier nanostructure

We report on a theoretical study of spin-dependent Goos-Hänchen (GH) shift of electrons in antiparallel double δ-magnetic-barrier (MB) nanostructure under an applied voltage, which can be experimentally realized by depositing two metallic ferromagnetic (FM) stripes on top and bottom of the semiconductor heterostructure. GH shifts for spin electron beams across this device, is exactly calculated, with the help of the stationary phase method. It is shown that a considerable spin polarization of GH shifts can be achieved in this device for two δ-MBs with unidentical magnetic strengths. It also is shown that both magnitude and sign of spin polarization of GH shifts can be controlled by adjusting the electric potential induced by the applied voltage. These interesting properties may provide an effective approach of spin injection for spintronics application, and this device can be used as a voltage-tunable spin beam splitter.     

Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100)

The spin polarization of current injected into GaAs from a CoFe/MgO(100) tunnel injector is inferred from the electroluminescence polarization from GaAs/AlGaAs quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52% at 100 K, and 32% at 290 K. We find a nonmonotonic temperature dependence of the polarization which can be attributed to spin relaxation in the quantum well detectors.     

Perpendicular spin torques in magnetic tunnel junctions

We quantitatively determine a perpendicular spin torque in magnetic tunnel junctions by measuring the room-temperature critical switching current at various magnetic fields and current pulse widths. We find that the magnitude of the torque is proportional to the product of the current density and the bias voltage, and the direction of the torque reverses as the polarity of the voltage changes. By taking into account the energy-dependent inelastic scattering of tunnel electrons, we formulate the bias dependence of the perpendicular spin torque which is in qualitative agreement with the experimental results.     

Dynamical theory of thermal spin fluctuations in metallic ferromagnets

A self-consistent dynamical theory of thermal spin fluctuations is developed which describes their spatial correlation. It is based on the functional integral method and utilizes the quadratic representation for the electron free energy in a fluctuating exchange field with renormalized susceptibilities allowing for the interaction of various spin fluctuation modes. Interpolation between the single-site and homogeneous susceptibilities is used, where these susceptibilities are found self-consistently. The average over fluctuations takes account of both long-wavelength and local excitations. A closed system of equations is formed for both unknown quantities: the magnetization and the mean-square exchange field at a site. The basic characteristics of a specific magnet are the density of electron states and the atomic magnetic moment at T=0. A method is proposed for separating the relatively slow thermal-spin fluctuations from the rapid zero-spin fluctuations forming the ground state of the magnets. At T=0 we have a system of equations of mean field theory. The temperature excites thermal spin fluctuations, which are described by taking account of correlation in time and space. The magnetization, susceptibility, magnitude of the spin fluctuations and their distribution over momenta, and the degree of magnetic short-range order in iron are calculated as functions of the temperature in the ferromagnetic and paramagnetic phases, and also at the transition between them, the Curie temperature. Fiz. Tverd. Tela (St. Petersburg) 40, 90–98 (January 1998)     

Helical edge transport in the presence of a magnetic impurity

We consider the effects of electron scattering off a quantum magnetic impurity on the current–voltage characteristics of the helical edge of a two-dimensional topological insulator. We compute the backscattering contribution to the current along the edge for a general form of the exchange interaction matrix and arbitrary value of the magnetic impurity spin. We find that the differential conductance may exhibit a nonmonotonic dependence on the voltage with several extrema.