Synthesis, structure, and high-temperature thermoelectric properties of boron-doped Ba8Al14Si31 clathrate I phases

Single crystals of boron-doped Ba8Al14Si31 clathrate I phase were prepared using Al flux growth. The structure and elemental composition of the samples were characterized by single-crystal and powder X-ray diffraction; elemental analysis; and multinuclear (27)Al, (11)B, and (29)Si solid-state NMR. The samples' compositions of Ba8B0.17Al14Si31, Ba8B0.19Al15Si31, and Ba8B0.32Al14Si31 were consistent with the framework-deficient clathrate I structure Ba8Al(x)Si(42-3/4x)cube(4-1/4x) (x = 14, cube = lattice defect). Solid-state NMR provides further evidence for boron doped into the framework structure. Temperature-dependent resistivity indicates metallic behavior, and the negative Seebeck coefficient indicates that transport processes are dominated by electrons. Thermal conductivity is low, but not significantly lower than that observed in the undoped Ba8Al14Si31 prepared in the same manner.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Structure and thermoelectric characterization of Ba8Al14Si31

A molten Al flux method was used to grow single crystals of the type I clathrate compound Ba8Al14Si31. Single-crystal neutron diffraction data for Ba8Al14Si31 were collected at room temperature using the SCD instrument at the Intense Pulsed Neutron Source, Argonne National Laboratory. Single-crystal neutron diffraction of Ba8Al14Si31 confirms that the Al partially occupies all of the framework sites (R1 = 0.0435, wR2 = 0.0687). Stoichiometry was determined by electron microprobe analysis, density measurements, and neutron diffraction analysis. Solid-state (27)Al NMR provides additional evidence for site preferences within the framework. This phase is best described as a framework-deficient solid solution Ba8Al14Si31, with the general formula, Ba(8)Al(x)Si(42-3/4x)[](4-1/4x) ([] indicates lattice defects). DSC measurements and powder X-ray diffraction data indicate that this is a congruently melting phase at 1416 K. Temperature-dependent resistivity reveals metallic behavior. The negative Seebeck coefficient indicates transport processes dominated by electrons as carriers.     

Synthesis, crystal structure, and physical properties of the type-I clathrate Ba(8-δ)Ni(x)□(y)Si(46-x-y)

Type-I clathrate phase Ba(8)Ni(x)□(y)Si(46-x-y) (□ = vacancy) was obtained from the elements at 1000 °C with the homogeneity range 2.4 ≤ x ≤ 3.8 and 0 ≤ y ≤ 0.9. In addition, samples with low Ni content (x = 1.4 and 1.6; y = 0) and small Ba deficiency were prepared from the melt by steel-quenching. Compositions were established by microprobe analysis and crystal structure determination. Ba(8-δ)Ni(x)□(y)Si(46-x-y) crystallizes in the space group Pm ?3n (No. 223) with lattice parameter ranging from a = 10.3088(1) ? for Ba(7.9(1))Ni(1.4(1))Si(44.6(1)) to a = 10.2896(1) ? for Ba(8.00(3))Ni(3.82(4))Si(41.33(6)). Single-crystal X-ray diffraction data together with microprobe analysis indicate an increasing number of framework vacancies toward compositions with higher Ni content. For all compositions investigated, Ni K-edge X-ray absorption spectroscopy measurements showed an electronic state close to that of elemental Ni. All samples exhibit metallic-like behavior with moderate thermopower and low thermal conductivity in the temperature range 300-773 K. Samples with compositions Ba(7.9(1))Ni(1.4(1))Si(44.6(1)) and Ba(7.9(1))Ni(1.6(1))Si(44.4(1)) are superconducting with T(c) values of 6.0 and 5.5 K, respectively.     

Substitution clustering in a non-stoichiometric celsian synthesized by the thermal transformation of barium exchanged zeolite X

The thermal transformation of Ba exchanged zeolite X to celsian has been studied by ²⁷Al and ²⁹Si MAS NMR spectroscopy. Evidence for the degradation of the zeolite framework is present in the ²⁹Si NMR spectra after thermal treatment at 850 °C. Confirmation is provided by the ²⁹Si NMR data that synthesis of celsian via the decomposition of Ba exchanged zeolite leads to a single defect phase. Clustering of the isomorphous replacement of aluminium by silicon must occur to explain the observed ²⁹Si chemical shifts. The ²⁷Al NMR data show distorted aluminium co-ordination sites upon the thermal transformation of Ba exchanged zeolite X. The distortions present in the amorphous matrix are greater than those present in the monoclinic and hexagonal crystalline phases of celsian.     

Some aspects of the high-temperature behavior of bismuth,strontium and barium on silicon surfaces studied by total reflection X-ray fluorescence spectrometry

Thin films of novel dielectric and ferroelectric materials, such as barium strontium titanate (BST) and strontium bismuth tantalate (SBT), which are scheduled for short-term implementation into standard microelectronic device technology, contain elements like Bi, Sr and Ba which may involve risks with regard to device yield and reliability. Therefore, the high-temperature behavior of bismuth, strontium and barium impurities on Si (100) substrates was studied. Intentionally contaminated Si substrates were annealed at 1000°C under different ambient (inert, oxidizing) by rapid thermal annealing (RTA) or in a furnace and analyzed by total reflection X-ray fluorescence spectrometry (TXRF), vapor phase decomposition/TXRF (VPD/TXRF) and electrolytic metal tracer (Elymat) technique. Ba and Sr are incorporated in the existing or growing oxide during rapid thermal annealing (RTA). Cross-contamination due to gas phase transport may occur in the case of Bi, in particular under N₂ atmosphere, but is of no concern in the case of Ba and Sr. All three contaminants do not exert an influence on the minority carrier lifetime on their own. The results illustrate that TXRF and VPD/TXRF are appropriate techniques for such studies.     

Structure and thermoelectric characterization of AxBa8-xAl14Si31 (A = Sr, Eu) single crystals

Single crystals of AxBa8-xAl14Si31 (A = Sr, Eu) were grown using a molten Al flux technique. Single-crystal X-ray diffraction confirms that AxBa8-xAl14Si31 (A = Sr, Eu) crystallize with the type I clathrate structure, and phase purity was determined with powder X-ray diffraction. Stoichiometry was determined to be Sr0.7Ba7.3Al14Si31 and Eu0.3Ba7.7Al14Si31 by electron microprobe analysis. These AxBa8-xAl14Si31 phases can be described as framework-deficient clathrate type I structures with the general formula, AxBa8-xAlySi42-3y/4[]4-1/4y. DSC measurements indicate that these phases melt congruently at 1413 and 1415 K for Sr0.7Ba7.3Al14Si31 and Eu0.3Ba7.7Al14Si31, respectively. Temperature-dependent resistivity indicates metallic behavior, and the negative Seebeck coefficient indicates transport processes dominated by electrons as carriers. Thermal conductivity of these phases remains low with Sr0.7Ba7.3Al14Si31 having the lowest values.     

BaY2Si3O10: a new flux‐grown trisilicate

BaY₂Si₃O₁₀, barium diyttrium trisilicate, is a new silicate grown from a molybdate‐based flux. The structure is based on zigzag chains, parallel to [010], of edge‐sharing distorted YO₆ octa­hedra, linked by horseshoe‐shaped trisilicate groups and Ba atoms in irregular eight‐coordination. The layered character of the structure is caused by a succession of zigzag chains and trisilicate groups in planes parallel to (01). The Ba atoms occupy narrow channels extending parallel to [100]. The mean Y—O, Si—O and Ba—O bond lengths are 2.268, 1.626 and 1.633, and 2.872 Å, respectively. The two symmetry‐equivalent terminal SiO₄ tetra­hedra in the Si₃O₁₀ unit adopt an eclipsed conformation with respect to the central SiO₄ tetra­hedron; the Si—O—Si and Si—Si—Si angles are 136.35 (9) and 96.12 (4)°, respectively. One Ba, one Si and two O atoms are located on mirror planes; all remaining atoms are in general positions. The geometry of isolated trisilicate groups in inorganic compounds is briefly discussed.     

Particulate matter (PM10) from São Carlos-SP (Brazil): spectroanalytical techniques to evaluate and determine chemical elements

Chemical composition of PM10 was studied during the period of 2014–2015 in the city of São Carlos, Brazil (‘Dos Voluntários’ Square). PM10 samples were directly analysed by wavelength dispersive X-ray fluorescence – WD-XRF (Al, Ca, Ce, Cl, Fe, K, Mg, P, S, Si, Ti, V, and Zn), and by laser-induced breakdown spectroscopy – LIBS (Ba, Ca, Fe, K, Mg, Na, Si and Ti) both for qualitative purposes. For quantitative analysis of Al, Ba, Ca, Fe, K, Na, S, and Zn, the analytes were extracted from samples of PM10 collected, in filters of glass fibre, with an extractive acid solution (HNO₃ and HCl) and determined by inductively coupled plasma optical emission spectrometry – ICP OES. Spatial variations of elemental concentrations (ng m^–3) were significantly higher in winter Al (19.0), Ba (13.6), Ca (20.0), Na (27.0), S (37.1), and Zn (9.5), autumn showed the highest concentration of Na (26.4), spring showed the highest concentration of Fe (11.6), K (13.1) and also S (25.3) and summer did not show a high concentration in the comparison between the seasons at the site. Using principal component analysis (PCA), as a data interpretation tool, with the data obtained by the WD-XRF and LIBS it was not possible to obtain a good correlation, but with the data of ICP OES, it was possible to verify correlations between identified and determinate elements, with samples collected in the autumn, winter, spring and summer seasons in the city of São Carlos. These associated analytical techniques were excellent tools in environmental monitoring, through the analysis of PM10 samples, presenting reliable and efficiency strategy, and based on the PCA and the EF equation was possible to draw the profile of the possible origins of these elements in the city.     

Chemical analysis by inductively coupled plasma atomic emission spectrometry of semiconducting ceramics of barium titanate doped with various metal oxides

The Ba and Ti macroconstituents as well as the impurities and dopants content (Al, Ca, Co, Cr, Cu, Fe, K, Li, Mg, Mn, Na, Nb, Ni, P, Pb, Si, Sr, W, Zn and Zr) in a dense (> 98% theoretical) barium titanate sample have been determined by inductively coupled plasma-atomic emission spectrometry after one of these decomposition routes: (a) decomposition with HCl in a PTFE-lined pressure vessel, (b) fusion with Na₂CO₃ in a platinum crucible, and (c) fusion with Li₂B₄O₇ in a graphite crucible. Matrix effects were taken into account. Detection limits for minors and trace elements were determined. High sensitivity and good precision were attained.Presented in part at the 1989 European Winter Conference on Plasma Spectrochemistry, Reutte, Austria     

Superconductivity of metal deficient silicon clathrate compounds,Ba8-xSi46 (0< x < or = 1.4)

Single crystals of the Ba-containing silicon clathrate superconductor Ba(7.76)Si(46) were prepared using a high-pressure and high-temperature condition (3 GPa, 1300 degrees C). It crystallized in the cubic space group Pm-3n with a = 10.3141(7) A and Z = 1. There are two crystallographically different types of Ba sites, at the centers of Si dodecahederal (Ba@Si(20)) and Si tetrakaidecahedral (Ba@Si(24)) cages. On evacuation at 527 degrees C, a part of Ba atoms were removed from the Ba@Si(20) sites. The superconducting transition temperature (T(c)) decreased from 9.0 to 6.0 K with the decrease of the Ba content from 7.76 to 6.63 Ba/Si(46). The Ba deficient sites and the deficiency were determined by the structural refinement in the single-crystal X-ray analyses.     

In situ observation of the formation of Si clathrate Ba8Si46 at high pressures and high temperatures

X-ray diffraction measurements at high pressures and high temperatures revealed that Si clathrate Ba 8Si 46 is formed by a solid-phase reaction of an 8:30 molar mixture of SrSi 2-phase BaSi 2 and Si after BaSi 2 undergoes the BaSi 2-to-EuGe 2 and the EuGe 2-to-SrSi 2 transitions. The volume reduction during the formation of Ba 8Si 46 is the largest, 7.6%, among the observed transitions. On the other hand, an 8:30 molar mixture of SrSi 2-phase SrSi 2 and Si does not result in the formation of Sr 8Si 46 at high pressures and high temperatures; only SrSi 2 transforms from the SrSi 2 phase into the alpha-ThSi 2 phase, and Si remains in the diamond phase.     

高分辨等离子体质谱法直接测定高纯镓中的痕量元素

建立高分辨电感耦合等离子体质谱法(HR-ICP-MS)测定高纯镓样品中Be、Mg、A l、S i、Ti、V、Cr、Mn、Fe、Co、N i、Cu、Zn、Ge、As、Mo、Ag、Cd、In、Sb、Ba、Pb、B i等痕量元素的方法。样品用HNO3 HC l经微波消解后,试液直接进样用HR-ICP-MS法同时测定上述元素,在高分辨质谱测量模式下避免了大量的质谱干扰,详细地研究了HC l和高纯镓所产生的基体效应,以Sc、Rh、Tl作为内标元素校正了基体效应,讨论和确定了实验的最佳测定条件。结果表明,23种痕量元素的检出限在0.001~0.21μg/L之间;回收率在89.8%~111.6%之间,相对标准偏差(RSD)小于3.3%。     

Type-I clathrate Ba8Ni(x)Si(46-x): phase relations, crystal chemistry and thermoelectric properties

The phase relations, crystal structure and thermoelectric properties of the type-I solid solution Ba(8)Ni(x)Si(46-x) were investigated. Based on X-ray diffraction, differential thermal analysis and electron probe microanalysis data, a partial phase diagram was constructed for the Si-rich part of ternary system Ba-Ni-Si at 800 °C. The solubility range of Ni in the clathrate-I phase at 800 °C was determined (2.9 ≤x≤ 3.8) and thermoelectric properties, namely electrical resistivity, Seebeck-coefficient and thermal conductivity, were measured in the temperature range from 300 to 850 K. A shift of the thermoelectric properties from a predominantly metallic to a more semiconducting behavior was observed for an increasing Ni-content. Density functional calculations revealed a significant decrease of the gap width in the density of states induced by the incorporation of Ni. Electrical resistivity and Seebeck coefficients for Ba(8)Ni(x)Si(46-x) with 3.3 ≤x≤ 3.8 have been modeled within the rigid band approximation.     

<Superscript>137</Superscript>Cs/<Superscript>137m</Superscript>Ba radioisotope generator based on 6-tungstocerate(IV) column matrix

Summary Barium-137m radioisotope generator of the chromatographic column elution mode based on loading 1.5 g 6-tungstocerate(IV) gel matrix with ~54 kBq of fission-produced ¹³⁷Cs is described. The elution performance of the generated ^137mBa radionuclide was investigated as a function of chemical composition of the eluent, flow rate, elution frequency, and age of the generator system. At comparable conditions, ^137mBa eluates with 0.9% NaCl-0.1M HCl eluent had higher elution yields and radionuclidic purity than with 0.1M NH₄Cl-0.1M HCl eluent. The generator has been repeatedly eluted for 311 days by passing 4810 ml of the saline eluent (10 ml × 481 elution operations) at a flow rate of 3.0 ml/min. Barium-137m eluates of high and reproducible elution yields, chemical and radionuclidic purities of (≥ 99.99%) were obtained.     

Enhanced dielectric properties of LSCO-buffered Ba(Sn<Subscript>0.05</Subscript>Ti<Subscript>0.95</Subscript>)O<Subscript>3</Subscript> thin film prepared by sol–gel processing

Ferroelectric Ba(Sn_0.05Ti_0.95)O₃ (BTS) thin films were deposited onto Pt/Ti/SiO₂/Si substrates by sol–gel technique with a 100 nm thick LSCO buffer layer. The influence of buffer layer on the phase and microstructure of the thin films was examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current (DC) electric field. The results show that the LSCO buffer layer had a marked effect on the dielectric properties of the BTS films. The BTS thin films with LSCO buffer layer had enhanced dielectric properties.     

A rapid separation of radioactive cesium by nitrobenzene extraction using the chromium complex [Cr(aniline)2(NCS)4]−

A rapid separation of radioactive cesium by the solvent extraction method was investigated. Cesium ions are quantitatively extracted with [Cr(NH₂C₆H₅)₂(NCS)₄]⁻ into nitrobenzene. EDTA is an effective masking agent for other polyvalent cations. The extracted cesium can be back-extracted into the aqueous phase by shaking with 6N HCl. The method was applied to samples of a natural mixture of fission products and a reactor coolant. The decontamination factors for other predominant isotopes in fission products were 10²∼10⁴. The separation of^137m Ba from a mixture of¹³⁷Cs and^137m Ba is also described.     

Column chromatographic separation of Ce(III) from U(VI) and other elements in hippuric acid medium as an analytical application of poly[dibenzo-18-crown-6]

A simple and efficient column chromatographic method has been developed for the separation of Ce(III) from U(VI) and Ni(II)/Zn(II)/Cd(II)/Co(II)/Ba(II) etc. using poly[dibenzo-18-crown-6] as stationary phase and hippuric acid as a counter ion. HCl and H₂SO₄ were most efficient eluting agents for Ce(III). The capacity of crown polymer for Ce(III) was found to be 0.285 ± 0.01 mmol/g. The tolerance limits of various cations and anions for Ce(III) were determined. Ce(III) was quantitatively separated from U(VI) and Ni(II)/Zn(II)/Cd(II)/Co(II)/Ba(II) in binary as well as multicomponent mixtures. The good separation yields were obtained and had good reproducibility (±2 %). The method incorporated the determination of Ce(III) in real sample. The method was simple, rapid and selective.     

Stereoselective Activation of Small Molecules by a Stable Chiral Silene

The reaction of the dilithium salt of the enantiopure (S)-BINOL (1,1’-bi-2-naphthol) with two equivalents of the amidinate-stabilized chlorosilylene [L^PhSiCl] (L^Ph=PhC(NtBu)₂) led to the formation of the first example of a chiral cyclic silene species comprising an (S)-BINOL ligand. The reactivity of the Si=C bond was investigated by reaction with elemental sulfur, CO₂ and HCl. The reaction with S₈ led to a Si=C bond cleavage and concomitantly to a ring-opened product with imine and silanethione functional groups. The reaction with CO₂ resulted in the cleavage of the CO₂ molecule into a carbonyl group and an isolated O atom, while a new stereocenter is formed in a highly selective manner. According to DFT calculations, the [2+2] cycloaddition product is the key intermediate. Further reactivity studies of the chiral cyclic silene with HCl resulted in a stereoselective addition to the Si=C bond, while the fully selective formation of two stereocenters was achieved. The quantitative stereoselective addition of CO₂ and HCl to a Si=C bond is unprecedented.     

Topological relationships and building blocks in Zintl phases of the composition Ba(n+1)(Mg,Li)2nSi2(n+1)

The structures of two novel Zintl phases, Ba6Mg5.2Li2.8Si12 and BaMg0.1Li0.9Si2, are presented. Both compounds contain chains in cis-trans conformation. The silicon partial structure of Ba6Mg5.2Li2.8Si12 (C2/m; a = 1212.0(1), b = 459.78(4), c = 1129.10(9) pm; beta = 91.77(2) degrees; Z = 1) is built of unbranched, planar Si6 chains while BaMg0.1Li0.9Si2 (Pnma; a = 725.92(5), b = 461.36(3), c = 1169.08(8) pm; Z = 4) consists of infinite Si(n) chains. The compounds show all electronic and structural characteristics that are typical for the special subset of Zintl phases with highly charged planar anions. The structures of the new compounds, as well as that of Ba2Mg3Si4, can be derived from the common parent type BaMg2Si2. It is shown that a comprehensive picture of a chemical twinning based on BaMg2Si2 can be derived.