Surface relief and structure of electroexplosive composite surface layers of the molybdenum-copper system

The surface topography and structure of copper layers exposed to multiphase plasma jets of products of electrical explosion of molybdenum and copper foils are studied using profilometry and scanning electron and light microscopy. Such treatment allows deposition of either layered coatings or alloyed composite layers. It is found that the surface layer roughness parameter is R _a = 3.2−4.0 μm. The thickness of some copper and molybdenum layers of coatings is 15–20 μm. Electroexplosive alloying produces layers 25 μm thick. Sizes of copper inclusions in the molybdenum matrix near the surface of such layers vary from 30 nm to 1–2 μm.     

Lead zirconate titanate-nickel zink ferrite thick-film composites: obtaining by the screen printing technique and magnetoelectric properties

Layered thick-film composites containing one lead zirconate titanate (PZT) layer, one nickel zinc ferrite (NZF) layer, two PZT-NZF layers, or three PZT-NZF-PZT layers each 40–50 μm thick are prepared. The layers are applied by screen printing on a ceramic aluminum oxide substrate with a preformed contact (conducting) layer. The dielectric properties of the composites are studied in the temperature interval 80–900 K and the frequency interval 25 Hz-1 MHz. Polarized samples exhibit piezoelectric, pyroelectric, and magnetoelectric effects. In tangentially magnetized two- and three-layer composites, the magnetoelectric conversion factor equals 57 kV/(m T) at low frequencies and reaches 2000 kV/(m T) at the mechanical resonance frequency.     

Pulsed electron-beam melting of a copper — steel 316 system: Evolution of the chemical composition,microstructure, and properties

The surface topography, chemical composition, microstructure, nanohardness, and tribological characteristics of a Cu (film, 512 nm)-stainless steel 316 (substrate) system subjected to pulsed melting by a low-energy (20–30 keV), high-current electron beam (2–3 μs, 2–10 J/cm²) were investigated. The film was deposited by sputtering a Cu target in the plasma of a microwave discharge in argon. To prevent local exfoliation of the film due to cratering, the substrate was multiply pre-irradiated with 8–10 J/cm². On single irradiation, the bulk of the film survived, and a diffusion layer containing the film and substrate components was formed at the interface. The thickness of this layer was 120–170 nm irrespective of the energy density. The diffusion layer consisted of subgrains of γ-Fe solid solution and nanosized particles of copper. In the surface layer of thickness 0.5–1 μm, which included the copper film quenched from melt and the diffusion layer, the nanohardness and the wear resistance nonmonotonicly varied with energy density, reaching, respectively, a maximum and a minimum in the range 4.3–6.3 J/cm². As the number of pulsed melting cycles was increased to five in the same energy density range, there occurred mixing of the film-substrate system and a surface layer of thickness ∼2 μm was formed which contained ∼20 at. % copper. Displacement of the excess copper during crystallization resulted in the formation of two-phase nanocrystal interlayers separating the γ-phase grains. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 6–13, December, 2005.     

Thermal analysis of InP-based quantum cascade lasers for efficient heat dissipation

We have theoretically investigated the thermal characteristics of double-channel ridge–waveguide InGaAs/InAlAs/InP quantum cascade lasers (QCLs) using a two-dimensional heat dissipation model. The temperature distribution, heat flow, and thermal conductance (G _th) of QCLs were obtained through the thermal simulation. A thick electroplated Au around the laser ridges helps to improve the heat dissipation from devices, being good enough to substitute the buried heterostructure (BH) by InP regrowth for epilayer-up bonded lasers. The effects of the device geometry (i.e., ridge width and cavity length) on the G _th of QCLs were investigated. With 5 μm thick electroplated Au, the G _th is increased with the decrease of ridge width, indicating an improvement from G _th=177 W/K⋅cm² at W=40 μm to G _th=301 W/K⋅cm² at W=9 μm for 2 mm long lasers. For the 9 μm×2 mm epilayer-down bonded laser with 5 μm thick electroplated Au, the use of InP contact layer leads to a further improvement of 13% in G _th, and it was totally raised by 45% corresponding to 436 W/K⋅cm² compared to the epilayer-up bonded laser with InGaAs contact layer. It is found that the epilayer-down bonded 9 μm wide BH laser with InP contact layer leads to the highest G _th=449 W/K⋅cm². The theoretical results were also compared with available obtained experimentally data.     

A near-field microwave technique for the deep profiling of free carrier concentrations in semiconductors

A technique for the profiling of free carrier concentration N(z) in semiconductors, based on the near-field measurements in microwave frequency range, is proposed. A high accuracy in retrieving the N(z) function with characteristic spatial scales of 10–100 nm using 2–3 probes with apertures of 3–15 μm is demonstrated.     

High-resolution photorefractive gratings in nematic liquid crystals sandwiched with photoconductive polymer film

Photorefractive gratings with high grating resolution were observed in the 20 μm thick low-molar-mass nematic liquid crystal (NLC) cell with a separate photoconductive (PC) poly(N-vinylcarbazole) layer. An orientational grating with a grating spacing of 1.9 μm was produced. It is believed that a space–charge field with small fringe spacing forms in the PC layer and its evanescent component penetrates into the NLC layer. The penetrated evanescent field drives the NLC to reorient, and consequently the orientational grating forms. The model indicates that the modulated field exists in several hundred nanometers near the surface, and thus the orientational grating is not full of the NLC film, which is consistent with the observed phenomena of the multiple diffractions. Besides, asymmetric two-beam coupling of 11.2% was achieved for the grating with a grating spacing of 1.9 μm, and a net gain coefficient of larger than 62 cm⁻¹ was obtained.     

Self-organized structuring of W/C multilayers on Si substrate

After aging at room temperature for several months W/C multilayers (20 periods, single layer thicknesses in the nanometer range) grown on Si-(111) substrates by pulsed laser deposition (PLD) developed homogeneously wrinkled surfaces. Their structures were studied by optical microscopy, atomic force microscopy and X-ray diffractometry. Typical dimensions of debonded areas are some 100 μm in length, about 40 μm in width and 2–3 μm in height. The formation of wrinkles is accompanied by an increase in the free surface by 1–2%. Stress relaxation is considered the driving force of this phenomenon. Received: 26 July 1999 / Accepted: 29 July 1999 / Published online: 16 September 1999     

Recombination zone and efficiency in bipolar single layer light-emitting devices: a numerical study

The efficiency of organic light-emitting devices (OLEDs) is closely related to the position and width of recombination zone (RCZ) in the emission layer. Based on the drift–diffusion theory of carrier motion in semiconductors, we developed a numerical model for the position and width of the RCZ in bipolar single layer OLEDs. The calculation results show that for a given operation voltage, the position and width of the RCZ are determined by the mobility difference of electrons and holes, and the energy barrier at the two contacts. When the anode and cathode contact are both ohmic, then RCZ will be near the electrode, from which the low-mobility carriers are injected, and the smaller the mobility difference, the wider the RCZ, and the width of RCZ will be maximal when the mobility of holes and electrons are equal. When the anode contact is Schottky, while the cathode contact is ohmic, then the position and width of RCZ will be determined by both the mobility difference and hole–injection energy barrier. When μ _p<μ _n, the RCZ will be at the anode side. When μ _p>μ _n, then RCZ will move away from the anode and become wider, with the increase of the hole injection barrier. For a given hole–injection barrier and mobility of holes and electrons, the position and width of RCZ change with the applied voltage.     

Measurement of surface absorption in optical materials by the method of laser photothermal radiometry

The present work is devoted to the development of the method of laser photothermal radiometry with a view to increasing its spatial resolution over the depth of the specimen when surface layers of the substance of thickness about 1 μm or less are to be investigated. As an example, results of an investigation of radiation absorption in the surface layer of a lithium niobate crystal are presented. The absorption index measured at a wavelength of 1.08 μm was ∼0.6 cm⁻¹. “Polyus” Research Institute, 3, Vernadskii Ave., Moscow, 117342, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 82–84, January–February, 1997.     

Modeling free carrier absorption in silicon

The different empirical models of light absorption in silicon by free charge carriers in near-infrared and infrared regions are analyzed. An improved empirical model for free carrier absorption in silicon is developed. Results are obtained over the wavelength range from 0.9 μm to 6 μm for n-type, and from 0.9 μm to 8 μm for p-type silicon. The new model is assessed ed by R ² parameter and the sufficient fitting of the experimental data is presented.     

Metal-on-oxide nanoparticles produced using laser ablation of microparticle aerosols

A continuous aerosol process has been studied for producing nanoparticles of oxides that were decorated with smaller metallic nanoparticles and are free of organic stabilizers. To produce the oxide carrier nanoparticles, an aerosol of 3–6 μm oxide particles was ablated using a pulsed excimer laser. The resulting oxide nanoparticle aerosol was then mixed with 1.5–2.0 μm metallic particles and this mixed aerosol was exposed to the laser for a second time. The metallic micron-sized particles were ablated during this second exposure, and the resulting nanoparticles deposited on the surface of the oxide nanoparticles producing an aerosol of 10–60 nm oxide nanoparticles that were decorated with smaller 1–5 nm metallic nanoparticles. The metal and oxide nanoparticle sizes were varied by changing the laser fluence and gas type in the aerosol. The flexibility of this approach was demonstrated by producing metal-decorated oxide nanoparticles using two oxides, SiO₂ and TiO₂, and two metals, Au and Ag.     

Spectroscopy of GaAs/AlGaAs microstructures with submicron spatial resolution using a near-field scanning optical microscope

A near-field scanning optical microscope (NSOM), which we built, is used to investigate 1–5-μm wide stripes with a 10-nm thick layer—a quantum well — on a GaAs surface. A map of the photoluminescence intensity is obtained synchronously with the topographic profile of the structures. The measured spatial distribution of the photoluminescence intensity is described satisfactorily in a model that takes into account carrier diffusion in the layer and the existence of a region with a short carrier lifetime near the side boundaries of the layer. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 7, 523–527 (10 April 1996)     

Electron microscopy investigation of AlMg6 aluminum alloy surface defects caused by microorganisms extracted in space stations

The surfaces of AMg6 (aluminum-magnesium) alloy samples that have passed accelerated biocorrosion tests have been investigated in a Quanta-3D scanning electron microscope. The alloy samples have been treated with the Ulocladium botrytis Preuss fungus, which is an active destructive fungus and was previously extracted on surfaces of the International Space Station. Biocorrosion pits 2–10 μm in diameter, cavities the depths of which can reach 70–250 μm depth, and spots of modified color are found to be the most typical defects. The surfaces of large cavities consist of faceted cubic particles that are formed when the acid products of fungus metabolism interact with the alloy surface. The particles have an average size of 30 μm, which is close to the size of alloy grains. The microstructure of a biocorrosion layer has been investigated in a Quanta-3D microscope with the use of a focused Ga⁺ ion beam. The samples of 12-μm-wide transverse slices are obtained near large cavities and investigated in a Tecnai G₂₃0ST transmission electron microscope. The X-ray microanalysis of the defective layer has revealed the high concentration of oxygen in this layer. Obtained images indicate that the corrosion cavity surface has a complex porous structure.     

Concentration or modulation layering of perfect single crystals Bi2Sr2?xLaxCuO6+δ and Bi2?yPbySr2?xLaxCuO6

Precision structural studies of layering of perfect crystals Bi ₂ Sr _2−x La _x CuO _6+δ (BSLCO) ∼ 10 μm thick, grown by free growth within crystallized melt cavities, detect a macrolayer structure with each layer up to 0.1 μm thick. In the lanthanum concentration range x = 0.6−0.8, only modulation layering is observed. In the concentration range x = 0.3−0.5, either layers with two different lanthanum concentrations, but with the same modulated superlattice type, or layers with the same lanthanum concentration, but with two different modulated superlattice types are observed. At low lanthanum concentrations (0 < x < 0.26), layering into two or even three layer types with different lanthanum concentrations are almost always observed. Modulation suppression when lead is added to a mixture leads to the same layered structure of samples, but with appreciable variations in lattice parameters in the ab plane of individual layers and a and b axis rotation by several degrees with respect to each other in these layers. Thus, the superlattice in BSLCO single crystals stabilizes their composition in the ab plane, and inevitable variations in growth conditions lead to the layered structure of such crystals. Original Russian Text ? V.P. Martovitsky, A. Krapf, 2008, published in Kratkie Soobshcheniya po Fizike, 2008, Vol. 35, No. 3, pp. 29–38.     

Optical properties of grooved silicon microstructures: Theory and experiment

The reflection spectra of grooved silicon structures consisting of alternating silicon walls and grooves (air channels) with a period of a = 4–6 μm are studied experimentally and theoretically in the mid-IR spectral range (2–25 μm) upon irradiation of samples by normally incident light polarized along and perpendicular to silicon layers. The calculation is performed by the scattering matrix method taking into account Rayleigh scattering losses in a grooved layer by adding imaginary parts to the refractive indices of silicon and air in grooved regions. The experimental and calculated reflection spectra are in good agreement in the entire spectral range studied. The analysis of experimental and calculated spectra gave close values of the effective refractive indices and birefringence of the studied structures in the long-wavelength spectral region. The values calculated in the effective medium model in the long-wavelength approximation (λ ≫ a) gave considerably understated values. The obtained results confirm the efficiency of the scattering matrix method for describing the optical properties of silicon microstructures.     

Properties of Hg implanted Hg1? x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1−x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W⁻¹, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W⁻¹ were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W⁻¹ at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance. Work supported by CNR-CISE contract No. 73.01435.     

Compact X-ray radiograph based on a plasma gun

The results of the experiments on the formation of a plasma emitter with small spatial dimensions for pulsed radiography in the soft X-ray spectral range are presented. Emitting hot plasma was formed as a result of compression of the plasma jet by a current pulse with amplitude I _m = 215 kA and rise time T _fr = 200 ns. For the jet formation, we used a plasma gun based on the arc discharge (I _m = 8.5 kA and T _fr = 6 μs) initiated by breakdown over the surface of a dielectric in vacuum. The experiments were carried out with aluminum, tin, copper, and iron plasma jets. A single emitter, i.e., point Z-pinch (PZ-pinch), was formed when an interelectrode gap of a high current generator of 1.3–1.5 mm was used. The smallest spatial dimensions of the emitting region were obtained with the use of aluminum and tin. For a tin jet, the diameter of the emitting region was 7 ± 2 μm and its height was 17 ± 2 μm. The emission pulse duration at half-height was 2–3 ns. The total emission yield per pulse in the spectral range 1.56–1.90 keV was 30–50 mJ for the aluminum pinch and 10–30 mJ for the tin pinch. The developed method makes it possible to carry out radiographic examination of microobjects (including biological ones) 1–1000 μm in thickness, with spatial (10–20 μm) and time (2–3 ns) resolution.     

Portable optical water-and-oil analyzer based on a mid-IR (1.6–2.4 μm) optron consisting of an LED array and a wideband photodiode

An optical method for measuring the water and oil content using mid-IR (1.6–2.4 μm) LEDs and a wideband photodiode is suggested for the first time. This method is developed based on the absorption spectra of pure water, dewatered oil, and water—oil emulsions (cut oil) with different content of water and uses 10 types of LEDs in the spectral range 1.6–2.4 μm. It is shown that pure water heavily absorbs the LED radiation in the spectral range 1.85–2.05 μm, oil absorbs in the range 1.67–1.87 μm, and the LED radiation with a maximum at 2.20 μm is equally weakly absorbed by water and oil. An optical cell of the water-and-oil analyzer is designed on the basis of a three-element diode array with radiation maxima at 1.65 (detection of oil), 1.94 (detection of water), and 2.2 μm (reference signal) wideband photodiode covering the spectral range 1.3–2.4 μm. A calibration curve is derived that represents the dependence of the water concentration in oil on the amplitude of the reduced signal obtained by processing three signals from the LEDs. This optical method of measuring the water content in oil underlies a portable analyzer making possible online measurements directly in an oil well.     

Heat and mass transfer characteristics during rapid solidification of Fe-Cu peritectic alloys

The viscose flow and microstructure formation of Fe-Cu peritectic alloy melts are investigated by analyzing the velocity and temperature fields during rapid solidification, which is verified by rapid quenching experiments. It is found that a large temperature gradient exists along the vertical direction of melt puddle, whereas there is no obvious temperature variation in the tangent direction of roller surface. After being sprayed from a nozzle, the alloy melt changes the magnitude and direction of its flow and velocity rapidly at a height of about 180 μm. The horizontal flow velocity increases rapidly, but the vertical flow velocity decreases sharply. A thermal boundary layer with 160–300 μm in height and a momentum boundary layer with 160–240 μm in thickness are formed at the bottom of melt puddle, and the Reynolds number Re is in the range of 870 to 1070 in the boundary layer. With the increase of Re number, the cooling rate increases linearly and the thickness of thermal boundary layer increases monotonically. The thickness of momentum boundary layer decreases slowly at first, then rises slightly and decreases sharply. If Re < 1024, the liquid flow has remarkable effects on the microstructure formation due to dominant momentum transfer. The separated liquid phase is likely to form a fiber-like microstructure. If Re>1024, the heat transfer becomes dominating and the liquid phase flow is suppressed, which results in the formation of fine and uniform equiaxed microstructures. Supported by the National Natural Science Foundation of China (Grant Nos. 50121101 and 50395105)     

Optical modulator using metal-oxide-semiconductor type Si ring resonator

Electric-field drive optical modulators using a Si ring resonator were fabricated on silicon-on-insulator (SOI) wafers. The fabricated resonators consisted of Si waveguides with width and thickness of 1.0 and 0.3 μm, respectively. In order to induce the linear electro-optic (EO) effect in the Si core layer, the strain was applied by covering the layer with Si₃N₄ film (0.26 μm thick) deposited by low pressure chemical vapor deposition (LPCVD) at 750 °C. The vertical electric-field was applied to the Si waveguide through the top and bottom cladding layers, and the optical output from the drop port at the resonance wavelength was measured. At a wavelength of 1501.6 nm, the optical modulation of 33% was obtained at 200V (electric-field at the silicon surface ∼3 × 10⁵ V/cm, nearly the breakdown field). The resonance wavelength was shifted toward the short wavelength side by applying both positive and negative voltages, this shift was explained by carrier concentration modulation. The linear EO effect in the Si core layer was not observed, presumably because the strain in the Si core layer was too small.