Stochastic dislocation patterning during cyclic plastic deformation

A dislocation dynamical theory is developed for the formation of dipole dislocation patterns during cyclic plastic deformation in single glide. The stochastic dislocation dynamics adopted is suitable to account, in terms of a fluctuating effective medium, for the effects of long-range dislocation interactions on a mesoscopic scale. The theory can explain the occurrence of a matrix structure and persistent slip bands as a result of evolutionary processes, it gives the intrinsic strain amplitudes and the characteristic wavelength of these structures, and it allows for an interpretation of the structural changes associated with changes of the deformation conditions. Quantitative results are in good agreement with experimental observations.     

Point-defect-driven dislocation patterning during deformation under irradiation

Dislocation patterning driven by interactions of dislocations with deformation-induced point defects is considered. The effect of concurrent irradiation-induced production of point defects is also included. The uniform time-dependent solution of the set of equations describing the evolution of the system is probed by small periodic perturbations. A linear stability condition obtained in this way as well as the preferred wavelength of the emerging pattern depend on the values of the parameters reflecting biases in the production and annihilation of vacancies and interstitial atoms. It is proposed that by studying the effect of different types of radiation and different irradiation intensities on the occurrence and the wavelength of the dislocation pattern information about the deformation-induced point defect production bias may be obtained.     

Improvement of Plasticity of Ti-Based Bulk Metallic Glasses by Addition of Nb

Ti-based bulk metallic glasses （Ti40Zr25Cu9NisBe18 ）100-x Nbx with x = 0 to 5 at. % are prepared by copper-mold casting. The glass formation ability is almost unchanged by addition of Nb. The compression plasticity is, however, apparently changed, from 3% at x = 0 to 13% at x = 3, about 330% increases at the strain rate of 1 × 10^-4 8^-1. The increment of the plasticity can be attributed to the segregation of Nb in the area of shear bands during the compression processing. An effective way to increase the plasticity of Ti-based bulk metallic glasses is thus proposed.     

In-situ NMR study of dislocation motion in Ca-doped NaCl crystals

Using a fast multi-window NMR technique, we have measured in-situ the mean jump width x of mobile dislocations during plastic deformation in a series of NaCl single crystals with varying Ca⁺⁺ content. Aside from immobile forest dislocations, the Ca⁺⁺ impurities form additional obstacles for the moving dislocations thus lowering x. We found that the Ca⁺⁺-related obstacles exhibit a pronounced non-random distribution which results in a corresponding broad distribution of x. We show that the data can be evaluated by means of an appropriate distribution function g(1/x) with an uncommon dependence of the observed fitting parameters on the Ca⁺⁺ content. As expected, quenching of a sample leads to a more uniform distribution of the Ca⁺⁺-related obstacles resulting in a corresponding narrowing of g(1/x).     

On the foundations of stochastic dislocation dynamics

A stochastic approach to dislocation dynamics is proposed that starts off from considering the geometrically necessary fluctuations of the local stress and strain rate caused by long-range dislocation interactions during plastic flow. On a mesoscopic scale, a crystal undergoing plastic deformation is thus considered an effective fluctuating medium. The auto- and cross-correlation functions of the effective stress and the plastic strain rate are derived. The influences of dislocation multiplication, storage and cross slip on the correlation functions are discussed. Various analogies and fundamental differences to the statistical mechanics of thermodynamic equilibrium are outlined. Application of the theory of noise-induced transitions to dislocation dynamics gives new insight into the physical origin of the spontaneous formation of dislocation structures during plastic deformation. The results demonstrate the importance of the strain-rate sensitivity in dislocation patterning.     

Magnetic studies of the dislocation structure of iron single crystals deformed at 195K and 77K

Measurements of the coercive field, the initial susceptibility and the reversible susceptibility in the approach to ferromagnetic saturation show that during low-temperature deformation of iron single crystals mainly screw dislocations are created. Long-range internal stresses are found to be significantly smaller than in crystals deformed at room temperature. Macroscopic slip occurs on several slip systems. In the parabolic region of the work-hardening curves at 195 K the relation is valid, where τ isthe shear stress andN is the dislocation density. In the region of saturation of the shear stress the dislocation density further increases. After room-temperature prestrain the relation appears to hold for 77K-deformation also. Exhaustion hardening of edge dislocation is found at the beginning of the low-temperature deformation.     

Electron Backscattered Diffraction of Transgranular Crack Propagation in Soft Steel

We consider the crack propagation in a soft steel sheet during the formation. The drawability is considered in relation with the structural anisotropy, the mechanical behaviour is related to both the grain morphology and the texture. The structure heterogeneity could lead to the apparition of micro-cracks. The results show the texture effect on the crack propagation and on the crack arrest in soft steel during the formation. The EBSD technique allows to show that the adjustment of the grain orientation from the initial main component {111}（112） towards the deformation orientation {111}（110） incites a trans-granular crack through a grain with initial {111}（112） orientation in a globally ductile material. It is the presence of grains with {111}（110） orientation which permits the closing of micro-cracks.     

Temperature-induced rearrangement of the dislocation pattern of Persistent Slip Bands in copper single crystals

Experimental investigations are reported on mechanisms by which dislocation arrangements of Persistent Slip Bands (PSBs) respond to changes of the deformation temperature. Copper single crystals orientated for single slip were cyclically deformed well into saturation at 300 K at an applied resolved plastic shear-strain amplitude, , such that the plastic strain became localized in PSBs. The spacings of the dislocation walls in these PSBs are about 1.4 m. After the temperature had been lowered to 77 K, cyclic deformation was continued with unchanged . A transformation of the dislocation pattern started. A certain fraction of the PSBs produced at 300 K finally showed a mean wall spacing of about 0.7 m which is typical for PSBs formed at 77 K. The remaining PSBs did not finish the transformation and became obviously inactive. In the state of cyclic saturation reattained at 77 K 50% of the PSBs, which had been formed at 300 K, show the dislocation pattern characteristic of 77 K. It is concluded that the amplitude of the resolved plastic shear strain localized in a PSB, , must be twice as large at 77 K as at 300 K. In an additional series of experiments crystals were cyclically deformed at constant temperatures of 430 K, 300 K, 190 K, and 77 K. In the temperature range covered by these experiments, the amplitude of the saturation flow stress, _S, appears to be proportional to the intrinsic amplitude of the PSBs, .     

Diffusion-induced decay of disclinations and solid state amorphization in mechanically alloyed materials

A theoretical model is proposed which treats the diffusion-induced decay of fragment boundary disclinations as being a micromechanism for the solid state amorphization in mechanically alloyed materials. Within the framework of the suggested model the kinetics of amorphous-phase nucleation centres (spread cores of the decayed disclinations) is studied. In doing so, kinetic equations are suggested and solved, which describe the evolution of the radius of the amorphous core of the decayed disclination.     

The evolution of persistent slip bands in copper single crystals

The transformation of the so-called matrix structure into persistent slip bands (PSBs) during the fatigue of copper single crystals has been investigated by transmission electron microscopy (TEM). By cyclic pre-deformation a saturated, hard matrix structure was established which is not capable of further hardening. A sudden increase of the applied amplitude of the resolved plastic shear strain initiated the transformation of the matrix structure into PSBs. The number of deformation cycles with enlarged amplitude of resolved plastic shear strain was increased from experiment to experiment in order to obtain crystals with PSBs in consecutive stages of evolution. Surface observations indicated strain localization well before first fragments of the typical ladder-like dislocation pattern of PSBs could be identified in the bulk. From our experiments, we conclude that the transformation from the matrix structure into PSBs very likely starts from the centers of the veins which exhibit small dislocation-poor, soft areas. These areas are enclosed by a harder shell, where a high dislocation density is maintained and which may develop into first dislocation walls. During the evolution of PSBs the frequency distribution of the wall spacings narrows. This indicates that a shift of dislocation walls (1–2 nm/cycle) plays an important rôle in establishing the typical regular ladder-like dislocation pattern of well-developed PSBs.     

Dislocation evolution in titanium during surface severe plastic deformation

Surface mechanical attrition treatment (SMAT) is an innovative technique which can produce nanocrystalline (nc) layers of several tens of micrometers thickness on surfaces of metallic materials. In this work, the grade structures of commercially pure titanium (CP Ti) processed by SMAT was studied intensively, and the microstructure observations indicated that the dislocation evolution could be separated into three steps: (1) formation of dislocation tangles; (2) formation of dislocation bands; and (3) dynamic recrystallization of dislocation bands until the formation of nc Ti.     

The dynamic symmetry and plastic deformation of diamond lattice

An analysis of possible transformations of moments of force by a diamond lattice has been made. The conditions of resonance transformations of moments of force by this lattice have been found. The dynamics symmetry of the diamond lattice has been determined in terms of the Shubnikov group Fd3m'. Besides, it has been found that resonance librationally deformed configurations are oneperiodic and have cores 〈110〉 two times more deformed than the surrounding area. As a result of the action of resonance phonons of the librational mode it is possible to generate a new kind of defects-bidislocations with Burgers vector components+[110]/2 and −[110]/2. It has been shown that bidislocations can play an essential role in plastic deformation of a diamond lattice and other related lattices.     

Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate

The deformation surrounding Vickers indentations on InGaAsP/InP epilayers have been studied in detail. The surface topography was characterized by using atomic force microscopy (AFM). The material pile-up and sink-in regions around the indentation impression was observed for the quaternary InGaAsP/InP epilayers. The sectional analysis mode of the AFM shows the depth profile at the indented region. Microindentation studies were carried out for different atomic fraction of the quaternary InGaAsP/InP compound semiconductor alloys. The microhardness values of InGaAsP/InP epilayers were found to be in the range of 5.08 and 5.73 GPa. These results show that the hardness value of the quaternary alloy drastically increases as the composition of As was increased by 0.01 atomic fraction and when the phosphorous concentration decreases from 0.4 to 0.38. The reason may be that the increase in As concentration hardens the lattice when phosphorous concentration was less and hardness decreases when phosphorous was increased.     

Defect structure in EuS single crystals grown from the melt

The defect structure in EuS single crystals grown form the melt is studied by etch pitting, scanning and high-voltage electron microscopy. Circular and square etch pits and a second phase in the shape of thin hexagonal platelets are observed by etching. Microprobe analysis indicates the platelets to consist of Eu metal. In the transmission electron microscope, smoothly curved dislocations and helical dislocations, small dislocation loops and inclusions associated with dislocations are observed. The possible origin of the detected dislocation structure is considered with reference to climb and glide processes occurring during cooling down the grown crystals. The results corroborate the glide geometry of the NaCl lattice for EuS. On leave from Institute of Physics, Academic Sinica, Peking, VR China     

A physical model for the stress-induced electromagnetic effect in metals

Observations of the fracture-induced electromagnetic effect in metals have recently been reported by the author. This paper presents a physical model for explaining this new effect. The reasoning attributes the observed electromagnetic effect to dislocationelectron interactions in a metal. The frequency of the emitted radiation has been calculated from Bohr's correspondence principle and potential on the basis of Hertzian dipole radiation. The proposed physical model predicts emission of electromagnetic waves at distinct transition stages of elastic-plastic deformations. The paper also presents some of the experimental results, being obtained by the author, which confirm the practicability of this approach.     

Spatio-temporal aspects of low-temperature thermomechanical instabilities: A model based on dislocation dynamics

The occurrence of plastic instabilities which are accompanied by a significant heat release is a typical feature of the plastic behaviour of metals deformed at sufficiently low temperature. This phenomenon may be studied within the framework of a dislocation-dynamical model. The influence of the heat which is released by the deformation process on the dislocation velocity, and thus on the deformation dynamics, is taken into account. In particular, the influence of the spatial coupling which arises from heat conduction on the spatio-temporal behaviour of the deformation process is studied.     

Temporal dissipative structures in cyclically deformed metallic alloys

cyclically deformed metallic alloys. The model employs quasi-chemical reactions of multiplication, annihilation and positive feedback among the populations of mobile, immobile, and Cottrell-type dislocations [1]. Three major types of loading have been simulated, namely, pure sinusoidal, “creep fatigue”, and ramp loading. Computer movies of the temporal evolution of stress serrations and dislocation densities have been produced as an aide for analysis and illustration. It has been demonstrated that the model successfully reproduces strain bursts and stress serrations in fatigued metallic alloys in terms of the underlying dislocations mechanisms, thus establishing the fundamental connection between micro- and macromechanics of cyclic deformation. Received: 20 June 1996/Accepted: 6 October 1996     

The nature of the C-defects in nickel and their rôle in the interpretation of radiation damage in metals

In previous Perturbed-Angular-Correlation (PAC) studies of the - emission of ¹¹¹In probe nuclei in cold-worked or particle-irradiated nickel, it has been found that thermal annealing in the temperature regime of recovery stage III leads to the formation of so-called C-defects (Cubic defects). This is indicated by the occurrence of a new frequency of about 80 Mrad/s, in addition to the frequency (200 Mrad/s) that is due to ¹¹¹In on substitutional sites. Obviously, the C-defects are complexes consisting of ¹¹¹In and the intrinsic point-defect species that migrates freely in recovery stage III. Therefore, they have played an important rôle in the long-standing controversy on whether the recovery-stage-III defects are vacancies (one-interstitial model) or self-interstitials (two-interstitial model). The present paper reports on a novel experimental effort to reveal the nature of the C-defects by combining PAC studies on nickel samples differently pretreated in a systematic way, investigations of the Extended X-ray Absorption Fine Structure (EXAFS) on In-doped nickel, and measurements of the decay rate of ¹¹¹In nuclei in the Electron-Capture-Induced Decay (ECID). On the basis of the results of these experiments it is concluded that the defects trapped by substitutional ¹¹¹In atoms (In_s) in recovery stage III are self-interstitials (I), as expected according to the two-interstitial model. Moreover, there is evidence that the C-defects are In interstitials on tetrahedral sites (In_i) that form exclusively in the vicinity of the specimen surface from In_s – I pairs via the reaction In_s+I In_i.     

Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65)

Nitrogen ions were implanted in GaAs_1−xP_x (x=0.4; 0.65) at room temperature at various doses from 5×10¹² cm⁻² to 5×10¹⁵ cm⁻² and annealed at temperatures from 600°C up to 950°C using a sputtered SiO₂ encapsulation to investigate the possibility of creating isoelectronic traps by ion implantation. Photoluminescence and channeling measurements were performed to characterize implanted layers. The effects of damage induced by optically inactive neon ion implantation on photoluminescence spectrum were also investigated. By channeling measurements it was found that damage induced by nitrogen implantation is removed by annealing at 800°C. A nitrogen induced emission intensity comparable to the intensity of band gap emission for unimplanted material was observed for implanted GaAs_0.6P_0.4 after annealing at 850°C, while an enhancement of the emission intensity by a factor of 180 as compared with an unimplanted material was observed for implanted GaAs_0.35P_0.65 after annealing at 950°C. An anomalous diffusion of nitrogen atoms was found for implanted GaAs_0.6P_0.4 after annealing at and above 900°C.