面心立方结构填隙固溶体有序结构的确定

应用原子位形概率波理论,研究了面心立方晶格填隙固溶体中形成的最稳定的超晶格原子排列,对于八面体填隙固溶体和四面体填隙固溶体分别得出8种和7种基本有序结构。 关键词：     

晶格数目对面心立方结构光子晶体带隙的影响

对晶格数目对面心立方结构光子晶体带隙的影响进行了详细的实验研究.用不同厚度的材料制作面心立方结构光子晶体，并测量了其禁带的光谱特性.得到了对实际应用有指导作用的规律.一个可实际应用的光子晶体至少应有50个晶格. 关键词： 面心立方结构 光子带隙 晶格数目     

有心立方晶格面间距的计算

提出了一种计算有心立方结构面间距的方法,并给出了几个简单算例．     

面心立方的金属氢结构与能量的全量子力学计算

本文利用电子瞬时配对形成未饱和共价键的物理模型来划分通道，将改进的排列通道量子力学方法推广应用于面心立方的金属氢结构与能量的理论计算。结果发现，当中心原子与周围顶角间距Ｒ０＝１．７０ａ０时，总能量有一级小值－７．７５４（ｈ．ａ．ｕ．），表明金属氢的面心立方结构是稳定存在的，从而通过定量理论计算验证了金属氢高压合成机理的合理性。     

马格努斯效应演示教具的制作与研究

利用伯努利原理,制作了演示马格努斯效应的风力小车,并对小车动力作了理论推导,进一步通过实测小车受力等数据,得到了小车受力的经验性公式,还对小车作了改进,使其结构更加轻巧,且增加了新的演示功能.     

刚体转动瞬心极迹动态关系的演示教具

介绍一种演增刚体平面平行运动转动瞬心极迹动态关系的教具,可清晰在一幅画面上演示瞬心位置移动所描绘出的空间极迹和本体极迹以及三者之间的动态关系,教具结构简单易于制作,轻便易于携带。     

面心立方结构三维光子晶体的带隙特性

选择ZnSe、CdTe、AIP和GaAs 4种材料设计构成面心立方三维光子晶体结构,基于平面波展开法通过计算,得到带隙存在于0Hz、0.8140-0.8406Hz、0.7924-0.8218Hz和0.7457-0.7837Hz范围,带隙宽度随着4种材料介电常数的增加而增加.研究结论为三维光子晶体的制备提供参考.     

六角密积晶格中紧束缚电子的能带结构

本文采用紧束缚电子模型计算六角密积晶格的能带.结果表明,六角密积晶格的能带为特殊的复数形式,产生复能带的原因是由于其独特的晶格结构导致近邻原子的对称性破缺造成的.在倒空间k_z=0的平面上,实部关于k_x轴和k_y轴对称,而虚部则只关于k_y轴对称,关于k_x轴不对称,这是由直角坐标空间六角密积晶格中次近邻的两个密排层原子的不对称性决定的.本文相关研究结果既是固体物理教学内容的拓展,同时也可为分析晶体材料相关物理性质提供理论依据.     

光全息制作的变形面心立方结构光子晶体的带隙

四束激光从空气直接入射到平面结构的感光树脂所制备的面心立方结构实际上是一种不但晶格沿[111]方向拉伸,而且其格点也在[111]方向被拉长的变形面心立方结构。在对这种变形面心立方结构的光子晶体的晶格形状及能带分布的研究中,通过利用麻省理工学院的光子晶体能带计算程序计算了各种参量对此变形面心立方结构的蛋白石和反蛋白石的能带分布的影响,发现在一定条件下该结构的蛋白石会出现完全光子带隙。用激光全息聚合法在正胶的环氧树脂中可制作反蛋白石模板,若用此模板制作硅蛋白石,当晶格沿[111]方向拉伸2.1倍和硅的占空比为13.7%时出现最大的带隙宽度。此最大带隙宽度的结构的制作光路是三角锥形光路,对称地环绕中央光束的三束外围激光束之间夹角为54.0°,三束外围激光束与中央激光束夹角为31.6°。     

静电演示教具的发展与创新

静电演示实验在教学中的作用是电脑动画不能取代的;静电演示教具由于采用现代高压静电电源有了质的飞跃;指出静电演示教具的创新要遵循的几条原则。     

物理演示实验开放教学的探讨

介绍了以能力培养为主线的定性与半定量物理演示实验开放式教学模式及其在我校的运作情况。     

Dislocation mechanism for transformation between cubic ice Ic and hexagonal ice Ih

Cubic ice I_c is metastable, yet can form by the freezing of supercooled water, vapour deposition at low temperatures and by depressurizing high-pressure forms of ice. Its structure differs from that of common hexagonal ice I_h in the order its molecular layers are stacked. This stacking order, however, typically has considerable disorder; that is, not purely cubic, but alternating in hexagonal and cubic layers. In time, stacking-disordered ice gradually decreases in cubicity (fraction having cubic structure), transforming to hexagonal ice. But, how does this disorder originate and how does it transform to hexagonal ice? Here we use numerical data on dislocations in hexagonal ice I_h to show that (1) stacking-disordered ice (or I_c) can be viewed as fine-grained polycrystalline ice with a high density of extended dislocations, each a widely extended stacking fault bounded by partial dislocations, and (2) the transformation from ice I_c to I_h is caused by the reaction and motion of these partial dislocations. Moreover, the stacking disorder may be in either a higher stored energy state consisting of a sub-boundary network arrangement of partial dislocations bounding stacking faults, or a lower stored energy state consisting of a grain structure with a high density of stacking faults, but without bounding partial dislocations. Each state transforms to I_h differently, with a duration to fully transform that strongly depends on temperature and crystal grain size. The results are consistent with the observed transformation rates, transformation temperatures and wide range in heat of transformation.     

Effects of stacking fault energy on defect formation process in face-centered cubic metals

To elucidate the effect of stacking fault energies (SFEs) on defect formation by the collision cascade process for face-centred cubic metals, we used six sets of interatomic potentials with different SFEs while keeping the other properties almost identical. Molecular dynamic simulations of the collision cascade were carried out using these potentials with primary knock-on atom energies (E_PKA) of 10 and 20 keV at 100 K. Neither the number of residual defects nor the size distributions for both self-interstitial atom (SIA) type and vacancy type clusters were affected by the difference in the SFE. In the case of E_PKA = 20 keV, the ratio of glissile SIA clusters increased as the SFE decreased, which was not expected by a prediction based on the classical dislocation theory. The trend did not change after annealing at 1100 K for 100 ps. For vacancy clusters, few stacking fault tetrahedrons (SFTs) formed before the annealing. However, lower SFEs tended to increase the SFT fraction after the annealing, where large vacancy clusters formed at considerable densities. The findings of this study can be used to characterise the defect formation process in low SFE metals such as austenitic stainless steels.     

"物理演示实验"公选课的探索与实践

就面向我校文、理科开设的物理演示实验公选课的教学内容、教学方法及实践效果做了简要的介绍和研讨,给出了一种物理演示实验教学的新模式.     

可用硬币做的物理实验

介绍了用硬币做简易教具,演示水的表面张力、静电排斥斥力、电磁感应、磁化、磁屏蔽及光的全反射现象等力学、电磁学和光学实验.     

复旦大学的物理演示实验在创新中前进

介绍复旦大学物理演示实验室近年来在教学改革中的成果。     

让物理演示实验进入各类选修课

介绍了一些在交叉学科中引进的易于操作的物理演示实验，并指出了物理演示实验的前景。     

结合数字化教学平台开展物理演示实验的研究型学习

结合数字化教学平台,开展基于传统物理演示实验计算模拟的本科生研究型学习新模式.以滚摆演示实验和傅科摆演示实验为例,对研究型学习新模式的具体实现进行了详细地说明.     

Effects of stacking fault energies on formation of irradiation-induced defects at various temperatures in face-centred cubic metals

ABSTRACT

By using the six sets of interatomic potentials for face-centred cubic metals that differ in the stacking fault energy (SFE) while most of the other material parameters are kept almost identical, we conducted molecular dynamics simulations to evaluate the effects of SFE on the defect formation process through collision cascades. The simulations were performed at 100, 300 and 600?K, with a primary knock-on atom energy of 50 keV. The number of residual defects is not dependent on the SFE at all the temperatures. For clusters of self-interstitial atoms (SIAs), their clustering behaviour does not depend on the SFE, either. However, the ratio of glissile SIA clusters tends to decrease with increasing SFE. This is because perfect loops, the edges of which split into two partial dislocations with stacking fault structures between them in most cases, prefer to form at lower SFEs. The enhanced formation of glissile SIA clusters at lower SFEs can also be observed even at increased temperature. Because most large vacancy clusters have stacking fault structures, they preferentially form at lower SFE; however, it is observed only at the lowest temperature, where the mean size increases with decreasing SFE. At higher temperatures, because of their extremely low number density, the vacancy clustering behaviour does not depend on the SFEs.