57Fe Mössbauer study of Eu1−x Sr x FeO3−y

The samples of Eu_1–x Sr _x FeO_3–y (x=0.0–1.0) were prepared by the solid state reaction method. Their X-ray diffraction patterns and⁵⁷Fe Mössbauer spectra at room temperature were measured. It is found that Sr ions incorporate in the lattice of EuFeO₃, the change of crystal structure is related to the dopant.⁵⁷Fe Mössbauer spectra consist of one magnetic, one doublet and one single paramagnetic components. The Fe ions in the cubic phase are in intermediate valence state between Fe(III) and Fe(IV) and may participate in electron hopping.     

High-temperature operation of AlGaInAs/InP lasers1994

We discuss the design of uncooled lasers which minimizes the change in both threshold current and slope efficiency over the temperature range from–40 to +85°C [1]. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the Al _x Ga _y In_1–x–y As/InP material system [1] instead of the conventional Ga _x In_1–x As _y P_1–y /InP material system. Experimentally, we have investigated strained quantum well lasers with three different barrier layers and confirmed that the static and dynamical performance of the lasers with insufficient carrier confinement degrades severely under high-temperature operation [2]. With an optimized barrier layer, the Al _x Ga _y In_1–x–y As/InP strained quantum well lasers show superior hightemperature performance, such as a small drop of 0.3 dB in slope efficiency when the heat sink temperature changes from 25 to 100°C [3], a maximum CW operation temperature of 185°C [4], a thermally-limited 3-dB bandwidth of 13.9 GHz at 85°C [2], and a mean-time-to-failure of 33 years at 100°C and 10 mW output power [5].     

Crystalline structural phase boundaries in (K,Na,Li)NbO 3 ceramics

Lead-free (K_xNa_1−x)_1−yLi_yNbO₃ ceramics (with x=0.50, y=0–0.08 and x=0.30–0.70, y=0.06, respectively) were synthesized using the conventional solid-state reaction technique. Compositional influences of K, Na and Li constituents on microstructures, crystalline structures, dielectric and piezoelectric properties were investigated. It has been known that microstructures change largely with the alkali constituents and that there exist three orthorhombic-tetragonal phase boundaries at room temperature. One occurs in (K_0.50Na_0.50)_1−yLi_yNbO₃ ceramics at y=0.05–0.06, which corresponds to the previously reported morphotropic phase boundary (MPB). The other two appear in (K_xNa_1−x)_0.94Li_0.06NbO₃ ceramics near x=0.40 and x=0.60, respectively. (K_0.50Na_0.50)_0.935Li_0.065NbO₃ and (K_0.45Na_0.55)_0.94Li_0.06NbO₃ ceramics show high piezoelectric properties with the d₃₃ values over 200 pC/N and the k_p values around 45% at room temperature. It is thought that the observed high piezoelectric properties are largely affected by the temperature-driven orthorhombic-tetragonal phase transition.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

Structure, ferroelectric and piezoelectric properties of (Bi1−x−yNa0.925−x−yLi0.075)0.5BaxSryTiO3 lead-free piezoelectric ceramics

Lead-free multi-component ceramics (Bi_1−x−yNa_{0.925−x−y}Li_0.075)_0.5Ba_xSr_yTiO₃ have been prepared by an ordinary sintering technique and their structure and electrical properties have been studied. All the ceramics can be well-sintered at 1100 °C. X-ray diffraction patterns shows that Li⁺, Ba²⁺ and Sr²⁺ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure, and a morphotropic phase boundary (MPB) is formed at 0.04 < x < 0.08. As compared to pure Bi_0.5Na_0.5TiO₃ ceramic, the coercive field E_C of the ceramics decreases greatly and the remanent polarization P_r of the ceramics increases significantly after the formation of the multi-component solid solution. Due to the MPB, lower E_C and higher P_r, the piezoelectricity of the ceramics is greatly improved. For the ceramics with the compositions near the MPB (x = 0.04–0.08 and y = 0.02–0.04), piezoelectric coefficient d₃₃ = 133–193 pC/N and planar electromechanical coupling factor k_P = 16.2–32.1%. The depolarization temperature T_d reaches a minimum value near the MPB. The temperature dependences of the ferroelectric and dielectric properties suggest that the ceramics may contain both the polar and non-polar regions at temperatures near/above T_d.     

Electronic structures of Fe in La1−x Ba x FeO3−y (0≤x≤0.70)

Mössbauer spectra of La_1–x Ba _x FeO_3–y recorded at room temperature for various values of x show a six-line and/or a single-line subspectrum. The six-line subspectrum with IS=0.41 mm/s and H=52 T results from an orthorhombic perovskite containing only Fe³⁺ ions. The single-line subspectrum at 0.17 mm/s from a cubic perovskite can be assigned to neither Fe³⁺ nor Fe⁴⁺ but to an intermediate valence state, which may be due to electron hopping between the Fe³⁺ and Fe⁴⁺ ions on the identical octahedral sites. The temperature dependence of electron hopping in the compound La_0.40Ba_0.60FeO_3–y is presented.     

Positron annihilation studies on the electronic structure of Pd−Ag−H system

Angular Correlation of Annihilation Radiation (ACAR) is shown to be useful to examine the electronic structure of -phase Pd_1–y Ag _y H _x system. Hydrogen absorption by Pd_1–y Ag _y alloys results in the increase of both nearly free andd-localized electron numbers in compliance with the KKR-CPA calculation outcomes. The investigation of -phase systems, PdH _x hydrides as well as Pd_1–y Ag _y H _x materials, failed because of a high concentration of lattice defects.     

Magnetic Parameters of Hg1–x Mn x Se1–y S y and Hg1–x Mn x Te1–y S y Crystals

The magnetic susceptibility of Hg_1–x Mn _x Se_1–y S _y and Hg_1–x Mn _x Te_1–y S _y crystals is investigated by the Faraday method at H = 3 kOe in the temperature interval T = 77–300 K. It is established that the specific features of are due to Mn–S–Mn–S, Mn–Se–Mn–Se, and Mn–Te–Mn–Te clusters and mixed Mn–Se–Mn–S and Mn–Te–Mn–S clusters of different sizes in which the indirect exchange antiferromagnetic interaction between Mn atoms is realized through chalcogen atoms. Based on the dependences 1/_Mn = f(T), the magnetic parameters are determined and their dependences on the crystal composition (x and y) are established.     

Structure and magnetostriction of RFex (1.6 x 2.0) and R(Fe1−yTiy)1.8 (y 0.2) alloys (R=Dy0.65Tb0.25Pr0.1)

Structure, Curie temperature and magnetostriction of RFe_x (1.6 x 2.0) and R(Fe_1−yTi_y)_1.8 (y 0.2) alloys (R=Dy_0.65Tb_0.25Pr_0.1) have been investigated using optical microscopy, X-ray diffraction, AC initial susceptibility and standard strain gauge techniques. The homogenized RFe_x alloys are found to be essentially single phase in the range of 1.8 x 1.85. The second phase is a rare-earth-rich phase when x 1.8, and (Dy, Tb, Pr)Fe₃ phase when x 1.85. X-ray diffraction indicates that the R(Fe_1−yTi_y)_1.8 alloys contain a small amount of Fe₂Ti phase when y 0.05, which increases with the increment of Ti content. The Curie temperature of R(Fe₁−_yTi_y)_1.8 alloys slightly enhances with increasing Ti concentration when y 0.05, then remains almost unchanged in the range of 0.05 y 0.20. The magnetostriction of RFe_x alloys is improved when x 1.80 and reduced by increasing Fe content when x 1.85. The magnetostriction of R(Fe_1−yTi_y)_1.8 alloys is lowered by increasing Ti content.     

Martensitic transformation in La1−x Yb x Ag1−y In y

The structural phase transformation of La_1–x Yb _x Ag_1–y In _y has been studied on single crystals by low temperature Laue-technique. The martensitic transformation in this pseudobinary intermetallic alloy has to be characterized as a weak orthorhtombic distortion of a single I centered unit cell (c/a1.04;a/b1.006) and a collective slipping or twinning of these cells that gives a fixed orientation between the remaining cubic room temperature structure and the martensitic phase. Above room temperature exists an order-disorder transformation from the CsCl-B2 structure to an at room temperature metastable W-A2 structure. There is no dramatic change in the physical properties of this alloy by substituting La by Yb, so we may approximate our results to LaAg_1–y In _y .This paper is dedicated to Prof. Dr. S. Methfessel on the occasion of his 60^th birthday     

On the superconductivity of the tin-hydrogen system

Conductivity and superconductivity studies of amorphous [Sn_1–y Cu _y–]_1–x H _x samples in connection with¹¹⁹Sn Mössbauer effect experiments on¹¹⁹Sn_1–x H _x give strong evidence that the observed increase of the superconducting transition temperatureT _c in the Sn–H-system is caused by the stabilization of an amorphous structure. Thus the Sn–H-system is very similar to the Sn–Cu-system and no H-specific effect is needed to explain the increase ofT _c.     

The superconductive properties and crystal structure of Ba2(Y1−x Pr x )Cu3O9−y solid solutions

A series of Ba₂(Y_1–x Pr _x )Cu₃O_9–y solid solutions were prepared with the orthorhombic distorted perovskite structure. The compound Ba₂PrCu₃O_9–y belonging to tetragonal system is a good semiconductor. The superconductivity is observed for samples withx<0.6. With the increase of Y content, the distortion of crystal structure is greater and the superconductive transition temperature of zero resistanceTc(0) raises.     

Near-infrared photorefractivity in Cr-doped potassium sodium strontium barium niobate single crystal

We report on the photorefractive properties of a Cr-doped (K_1–x Na _x )_2A–2 (Sr _y Ba_1–y )_2–A Nb₁₀O₃₀ (x=0.586, y=0.659, A=1.12) single crystal in the near-infrared spectrum. The sample exhibits photorefractivity for wavelengths up to at least 840 nm where the steady-state two-beam coupling gain is found to be larger than 2 cm^–1. Photorefractive gain and decay rate are measured as a function of wavelength, grating spacing and intensity. The wavelength dependence of gain fluctuations in two-beam coupling are also measured.     

The effect of Sb concentration on the superconducting properties and phase composition of Bi-Pb-Sb-Sr-Ca-Cu oxide materials

The effect of Sb superconducting materials with nominal composition Bi_1.6Pb_0.4–x Sb _x Sr₂Ca₂Cu₃O _y (x=0.01–0.14) and Bi_1.5Pb_0.5–x Sb _x Sr₂Ca₂Cu₃O _y (x=0.025–0.12) has been investigated. These materials were subjected to DTA, ICP emission spectrometry, SEM, XRD and electric resistance measurements. It was found that the introduction of Sb raises the melting temperature of the material, it also raisesT _c (up to 110K) at several defined stoichiometric ratios. A certain lack of correspondence between the 2223 phase volume and theT _c value was noticed and a possible explanation has been proposed.     

Possible highT c superconductivity in the Ba−La−Cu−O system

Metallic, oxygen-deficient compounds in the Ba–La–Cu–O system, with the composition Ba _x La_5–x Cu₅O_5(3–y) have been prepared in polycrystalline form. Samples withx=1 and 0.75,y>0, annealed below 900°C under reducing conditions, consist of three phases, one of them a perovskite-like mixed-valent copper compound. Upon cooling, the samples show a linear decrease in resistivity, then an approximately logarithmic increase, interpreted as a beginning of localization. Finally an abrupt decrease by up to three orders of magnitude occurs, reminiscent of the onset of percolative superconductivity. The highest onset temperature is observed in the 30 K range. It is markedly reduced by high current densities. Thus, it results partially from the percolative nature, bute possibly also from 2D superconducting fluctuations of double perovskite layers of one of the phases present.     

Defect clustering in double doped fluorite crystals with Lu and Gd

Abstract

Solid solutions Ca¹ x-^yLu^xGd^y F_2+x+y for 10^?4 ≤ x ≤ 2 × 10^?2 and y=0.0001 have been studied by electron paramagnetic resonance (EPR) and ionic thermal currents (ITC). It has been found that the ITC spectrum from 77 to 420 K is very weak and the main peak is attributed to the relaxation of both Lu³⁺-F^? _x and Gd³⁺F^? _i nn dipoles. No polarizable clusters are present in the temperature range explored here. The EPR spectra show the presence of Gd³⁺ tetragonal and cubic centers due to the local and non local compensation, respectively. The continuous decrease in the molar fraction of Gd³⁺ tetragonal centers together with the low concentration of Lu nn dipoles is an evidence of the existence at these low and intermediate concentrations of large clusters such as the cubo-octahedral hexamer which has been proposed for CaF₂ crystals very highly doped with small trivalent cations.     

Einstein relation in n-i-p-i and microstructures of nonlinear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestions for an experimental determination

We investigate the Einstein relation for the diffusivity-mobility ratio (DMR) for n-i-p-i and the microstructures of nonlinear optical compounds on the basis of a newly formulated electron dispersion law. The corresponding results for III-V, ternary and quaternary materials form a special case of our generalized analysis. The respective DMRs for II-VI, IV-VI and stressed materials have been studied. It has been found that taking CdGeAs₂, Cd₃As₂, InAs, InSb, Hg_1−xCd_xTe, In_1−xGa_xAs_yP_1−y lattices matched to InP, CdS, PbTe, PbSnTe and Pb_1−xSn_xSe and stressed InSb as examples that the DMR increases with increasing electron concentration in various manners with different numerical magnitudes which reflect the different signatures of the n-i-p-i systems and the corresponding microstructures. We have suggested an experimental method of determining the DMR in this case and the present simplified analysis is in agreement with the suggested relationship. In addition, our results find three applications in the field of quantum effect devices.     

Wafer and epilayer improvement for integrated optics devices on InP: the ESPRIT project 2518

Ga _x In_1–x As _y P_1–y alloys lattice matched to InP substrates are currently used to fabricate optoelectronic and integrated optics devices. To achieve devices with high performances and high fabrication yield, the uniformity and reproducibility of the Ga _x In_1–x As _y P_1–y epitaxial layers (composition, thickness, doping, etc.) have become key parameters. These problems have been addressed in the frame of ESPRIT project 2518 and are presented in this paper. Several aspects have been considered starting from the optimization of InP substrates, the MOVPE growth of uniform GalnAsP layers, the material characterization to the validation of material uniformity on passive optical waveguides. Both scanning photoluminescence analysis and waveguide losses measurements performed on 2 inch wafers with a high lateral resolution have shown that high quality uniform GalnAsP layers can be obtained reproducibly on 2 InP substrates using a commercially available LP-MOCVD growth process. In particular, more than 60% of 36 mm long, 3m wide and 100m spaced rib waveguides exhibit losses below 0.8dBcm^–1.     

Crystallisation kinetics of amorphous Fe72.5−xCu1Nb4.5Si10+x+y B12-y alloy

Fe_73.5Cu₁Nb₃Si_13.5B₉ and Fe_72.5–xCu₁Nb_4.5Si_10+x+y B_12–y alloys are compared from the point of view of crystallisation behaviour and changes in the short-range order in the amorphous reminder. The increase in Nb to 4.5 at.% in the latter system slows down the formation of nanocrystals to approximately 40% even after 16 hours of anneal at 550 °C forx=0.5,y=3. Segregation-induced changes in the short-range order are manifested via hyperfine field distributions corresponding to the amorphous reminder.     

One-dimensional DLR invariant measures are regular

A system of infinite spins in one dimension is considered. The interaction is given by a pair potential –J _xyS_xS_y, whereS _x,S _y are the spins at the sitesx,y andJ _xy=J(|x–y|) whereJ(|x–y|) decreases asymptotically in an integrable way. The self-interaction makes the system superstable. It is proven that any invariant DLR measure for this system satisfies Ruelle's superstable estimates (regularity condition).