光时分复用(OTDM)系统中基于电吸收调制器(EAM)的短脉冲光源及解复用器的设计考虑

研究了电吸收调制器（ＥＡＭ） 的衰减随外加反向电压增加而指数增加的情形下,短脉冲光源的脉冲输出和解复用器的开关窗口对ＥＡＭ 的消光效率、反向ＤＣ 偏置电压以及正弦ＲＦ 驱动信号的幅度等参量的依赖关系－ 在基于ＥＡＭ 的短脉冲光源中,输出脉冲的消光比等于ＥＡＭ 消光效率η与正弦驱动电压峰峰值Ｖｐｐ 的乘积,输出光脉冲的消光比和脉宽均与ＥＡＭ 的反向偏置电压无关,但输出脉冲的峰值功率与η、Ｖｐｐ 和Ｖｂ 都有关系－ 在基于ＥＡＭ的解复用器中,为了使解复用器的开关窗口近似为矩形,可利用ＥＡＭ 的削波效应,使Ｖｐｐ／２＞ Ｖｂ－ 在ＥＡＭ 的消光效率η已知时,通过仔细设计反向ＤＣ 偏置电压Ｖｂ 和正弦驱动电压的峰峰值Ｖｐｐ ,达到ＯＴＤＭ 解复用器所需要的开关窗口形状、宽度和消光比－     

基于电吸收调制器的解复用器窗口特性分析及优化

数值模拟了基于电吸收调制器 (Electro absorptionmodulator,EAM)解复用器的开关窗口特性 ,在考虑邻道串扰和强度抖动 (由同步偏离和时间抖动导致 )的光时分复用数值模型中对解复用信号的误码率进行分析。数值模拟结果表明 ,电吸收调制器的窗口特性 (消光比和窗口宽度 )满足 4× 10Gb/s的光时分复用通信系统中解复用器的要求 ;在小的偏置电压下 ,邻道串扰和解复用器的透过率特性必须仔细考虑以达到最小的误码率 ;在大的偏置电压下 ,较大的射频幅度将会使解复用信号误码率最小     

组份夸克模型下的ηc→VV衰变问题

利用BS方法讨论了η_c→VV(包括η_c→ρρ,KK,φφ)问题,着重分析了夸克的组份质量和横动量效应对衰变振幅的影响.发现η_c→V_LV_T被严格禁戒.夸克横动量对增加衰变率有明显效应,但即使考虑了这些因素,理论值仍然比实验值小.     

基于电吸收调制晶体(EAM)的超短光脉冲特性研究

数值模拟了两种形式的基于电吸收调制晶体(EAM)的超短光脉冲源(单EAM)和级联EAM形式)的输出脉冲宽度及消光比与外加反向偏压、射频信号幅度之间的变化关系.数值模拟结果表明,在重复率为10GHz情况下,对于单EAM形式,可以获得的最小脉宽大约为13ps,其消光比大于20dB,脉冲波型接近sech2孤子波型;对于级联EAM形式,我们得到了小于5ps的超短脉冲,消光比也较单EAM形式有较大的提高.因此,单EAM形式的超短脉冲源可以满足20Gb/s的OTDM系统需求,也同样适合于超长距离的光孤子通信系统;级联形式EAM可以满足40Gb/s的OTDM系统光源需求.     

阵列波导光栅解复用器输入/输出波导结构串扰的数值分析

本论文采用Marcatili方法分析矩形波导的模场特性,在此基础上计算了AWG波分复用/解复用器串扰与输入/输出波导间隙参数(dr/w),波导结构参数V的变化关系.计算了串扰值一定时,选取V参数与dr/w的关系曲线.分析了在不同折射率差波导中,串扰与偏振的相关性,为器件的整体优化设计提供了参考数据.     

氧非正分La0.9Ba0.1MnO3-δ/SrTiO3:Nb p-n异质结的整流特性研究

利用脉冲激光沉积技术在掺Nb的SrTiO₃衬底上制备了氧非正分La_0.9Ba_0.1MnO_3-δ/SrTiO₃:Nb p-n异质结.在20—300K这一较宽的温度范围内获得了光滑的整流曲线.整流实验表明：该p-n异质结的正向扩散电压V_D随着温度升高在薄膜金属—绝缘转变温度附近出现极大值，表现出与氧正分La_0.9Ba_0.     

LiO2(C2V，X2A2)分子的结构与势能函数

使用二次组态相互作用方法，在aug-cc-pvtz基组水平上对LiO₂(C_2V，X²A₂)基态分子进行了几何优化，得到了它的平衡几何构型和力常数.根据原子分子反应静力学原理得到可能的电子状态和离解极限.应用多体展式理论方法推导出了LiO₂(C_2V，X²A₂)基态分子的解析势能函数.     

燃料电池系统最大热力学电效率及对氢气、甲烷和丙烷的应用结果

燃料电池系统的最大电效率（η_e^max）对理解和发展燃料电池技术至关重要.本文通过对燃料电池系统的热力学分析,在考虑加热燃料与空气至燃料电池工作温度的热量需求的基础上,建立了燃料电池运行过程的能量平衡关系,进而推导出了η_e^max的显式理论表达式.结果表明,与卡诺效率不同,η_e^max与燃料有关.由于除氢燃料外,计算η_e^max需要进行化学平衡计算,本文推导了烷烃燃料化学平衡态的解析解.所得理论模型被用于分析温度（T）与燃料水含量及废热回收率对η_e^max的影响.结果表明,甲烷和丙烷燃料的η_e^max随温度的升高而显著降低.此外,对中等废热回收率且运行于700 ℃≤T≤900 ℃的燃料电池系统,氢气燃料的η_e^max要高于甲烷和丙烷燃料的η_e^max.     

SiO2分子的基态(X1A1)结构与分析势能函数

应用群论及原子分子反应静力学方法推导了SiO₂分子的电子态及其离解极限，采用B3P86方法，在6-311G^**水平上,优化出SiO₂基态分子稳定构型为单重态的C_2V构型，其平衡核间距R_e=R_Si—O=0.1587 nm,∠OSiO＝111.2°,能量为-440.4392 a.u..同时计算出基态的简正振动频率:对称伸缩振动频率ν(B₂)=945.4cm^-1，弯曲振动频率ν(A₁)=273.5 cm^-1和反对称伸缩振动频率ν(A₁)=1362.9cm^-1.在此基础上，使用多体项展式理论方法，导出了基态SiO₂分子的全空间解析势能函数，该势能函数准确再现了SiO₂(C_2V)平衡结构.     

具有皮秒量级开关窗口的光波导微环谐振器

提出一种可以产生皮秒量级开关窗口的光波导微环谐振器,对其设计与性能进行了分析和研究。采用多环层叠结构来设计微环谐振器的传输特性曲线,利用特性曲线的非线性特征,在正弦电压的作用下改变材料的折射率可获得一个较窄的开关窗口。采用耦合矩阵理论研究了系统的调制特性以及开关窗口特性,分析了开关窗口宽度和消光比与驱动电压的关系。研究结果表明,10 GHz驱动电压情况下,开关窗口宽度、消光比和插入损耗可以分别优于10 ps,40 dB和1 dB。只需要电的控制信号而无需高质量的光控制脉冲,且具有工作速率高、结构简单、消光比高、传输损耗小和工作电压低等特点。     

Optimized performance map of an EAM for pulse generation and demultiplexing via FROG characterization

We demonstrate the complete characterization of a sinusoidally driven electro-absorption modulator (EAM) over a range of RF drive voltages and reverse bias conditions. An accurate performance map for the EAM, to be employed as a pulse generator and demultiplexer in an optical time division multiplexed (OTDM) system, can be realized by employing the Frequency Resolved Optical Gating technique. The generated pulses were characterized for chirp, extinction ratio (ER) and pulse width (<4 ps). The optimization of the EAM’s drive conditions is important to ensure that the generated pulses have the required spectral and temporal characteristics to be used in high-speed systems. The ER and pulse width also influence the demultiplexing performance of an EAM in an OTDM system. This is confirmed by utilizing the EAM as a demultiplexer in an 80 Gb/s OTDM system and measuring the BER as a function of the received optical power for various values of the ER and pulse width. It is of paramount importance to accurately characterize the performance of each individual EAM as the modulators characteristics are device dependant, thus optimum performance can be achieved with slight variations to the device’s drive conditions. By employing FROG, an optimum performance map of each specific device can be deduced. Simulations carried out verified the experimental results achieved.     

Performance prediction of an electroabsorption modulator at 1550 nm using GeSn/SiGeSn Quantum Well structure

The absorption spectra in strain-free Ge_0.992Sn_0.008/Si_0.3Ge_0.61Sn_0.09 Quantum Well structure due to direct gap excitons formed in Ge_0.992Sn_0.008 wells reported by Chang and Chang are reproduced by an empirical expression. Two Gaussian distributions for heavy hole and light hole excitons and two exponential functions describing continuum transitions and The Sommerfeld factors are used for the fit. The expressions are then used to obtain the change in refractive index, Δn, with field (electrorefraction) using the Kramers–Kronig relation. With the calculated changes in absorption and refraction with bias, other performance parameters of an Electro-Absorption Modulator (EAM), like extinction ratio, chirp parameter, and a figure of merit (FoM) defined as the ratio of extinction coefficient and insertion loss, are evaluated. The FoM takes the largest value for 1 μm length of the EAM with 2 V bias applied to the p–i–n structure. The parameters are also calculated for different wavelengths as well as detuning lengths. For applications as short pulse generation the transmission T as a function of bias V should be linear. We have evaluated the best value of bias voltage that makes the sum of second and third derivatives of T with V equal to zero so that the variation of T with V becomes maximally linear for optimum operation as a short pulse generator.     

High repetition rate optical switch using an electroabsorption modulator in TOAD configuration

A novel optical switch featured with high repetition rate, short switching window width, and high contrast ratio is proposed and demonstrated for the first time by placing an electroabsorption modulator (EAM) in a terahertz optical asymmetric demultiplexer (TOAD) configuration. The feasibility and main characteristics of the switch are investigated by numerical simulations and experiments. With this EAM-based TOAD, an error-free return-to-zero signal wavelength conversion with 0.62 dB power penalty at 20 Gbit/s is demonstrated.     

Cover Picture: Contrib. Plasma Phys. 9/2015

Effect of DC bias on the spatio‐temporal distribution of the electron density for L = 25 mm, V_pp = 150 V at p = 10 Pa with V_DC = 0 V. The color scales are given in units of 10⁹ cm^–3. (Figure 2b of the paper by N.Kh. Bastykova et al.)     

Driving-Noise-Tolerant Broadband Polymer/Silica Hybrid Thermo-Optic Switch with Low Power Consumption

Abstract

A polymer/silica hybrid Mach–Zehnder interferometer thermo-optic switch is experimentally demonstrated. The switch exhibits low power consumption of 7.8 mW, high extinction ratio of 32.6 dB, and short rise and fall times of 107 and 71 μs, respectively. The output spectrum is 50 nm (1,520–1,570 nm), with the extinction ratio level of over 18 dB. The driving-noise tolerance of this device was experimentally investigated by imposing a generated tunable noise on the pure driving signal. The device reveals a voltage-noise budget as high as 1.1 V_pp relative to a driving voltage of 3.0 V_pp for obtaining higher than a 10-dB extinction ratio.     

Reversible local-modification of surface structure on clean Ge(0 0 1) by scanning tunneling microscopy below 80 K

The structure of the clean Ge(0 0 1) surface is locally and reversibly changed between c(4×2) and p(2×2) by controlling the bias voltage of a scanning tunneling microscopy (STM) below 80 K. It shows hysteresis for the direction of the sample bias voltage change. The c(4×2) structure is observed with the sample bias voltage V_b?−0.7 V. This structure is maintained at V_b?0.7 V with increasing the bias voltage from −0.7 V. When V_b is higher than 0.8 V, the structure changes to p(2×2). This structure is then maintained at V_b?−0.6 V with decreasing the bias voltage from +0.8 V. The area of the structure change can be confined in the single dimer row just under the STM tip using a bias voltage pulse. In particular, the minimum transformed length is four dimers along the dimer row in the transformation from p(2×2) to c(4×2). The observed local change of the reconstruction with hysteresis is attributed to the energy transfer process from the tunneling electron to the Ge lattice in the local electric field due to the STM bias voltage. A phenomenological model is proposed for the structure changes. It is based on a cascade inversion of the dimer buckling orientation along the dimer row.     

Analysis of optical time domain demultiplexer using microring resonators

A time domain optical demultiplexer using electrooptic microring resonator is proposed. The switching window with pico-second order width is generated by using a sinusoidal electrical control voltage to shift the refractive index of the material. The modulation characteristics and switching window of the microring resonator are studied. The dependences of the width and extinction ratio of the switching window on the control voltage are analyzed. The demultiplexing performance of a 40–10 Gbps system is evaluated by numerical simulation technology. Results show that switching windows with required width and extinction ratio can be generated.     

The influence of strong bias voltage on the electrical and magnetic properties of the amorphous Gd-Co films

Some electrical and magnetic properties of Gd-Co films obtained by dc sputtering with bias voltage V_b are discussed. We observed a decrease in the compensation temperature and in the anomalous Hall resistivity with increasing bias voltage while the specific resistivity increases. The anisotropy constant, however, increases up to V_b = -200 V, where it reaches a maximum and then it decreases. Electrical conductivity of the films prepared with V_b greater than -100 V showed tunneling character. We conclude that not only resputtering of Gd atoms but also oxidation of Gd takes place during deposition when bias voltage is applied.