Investigation of possible structures of silicon nanotubes via density-functional tight-binding molecular dynamics simulations and ab initio calculations

We show, computationally, that single-walled silicon nanotubes (SiNTs) can adopt a number of distorted tubular structures, representing respective local energy minima, depending on the theory used and the initial models adopted. In particular, "gearlike" structures containing alternating sp(3)-like and sp(2)-like silicon local configurations have been found to be the dominant structural form for SiNTs via density-functional tight-binding molecular dynamics simulations (followed by geometrical optimization using Hartree-Fock or density function theory) at moderate temperatures (below 100 K). The gearlike structures of SiNTs deviate considerably from, and are energetically more stable than, the smooth-walled tubes (the silicon analogues of single-walled carbon nanotubes). They are, however, energetically less favorable than the "string-bean-like" SiNT structures previously derived from semiempirical molecular orbital calculations. The energetics and the structures of gearlike SiNTs are shown to depend primarily on the diameter of the tube, irrespective of the type (zigzag, armchair, or chiral). In contrast, the energy gap is very sensitive to both the diameter and the type of the nanotube.     

Silicon-silica nanowires, nanotubes, and biaxial nanowires: inside, outside, and side-by-side growth of silicon versus silica on zeolite

It was demonstrated that zeolite can be used as a pseudo-template to grow very fine and uniform silicon nanostructures via disproportionation reaction of SiO by thermal evaporation. Three distinct types of composite nanowires and nanotubes of silicon and silica were grown on the surfaces of zeolite Y pellets. The first type is formed by an ultrafine crystalline silicon nanowire sheathed by an amorphous silica tube (a silicon nanowire inside a silica nanotube). The second type is formed by a crystalline silicon nanotube filled with amorphous silica (a silicon nanotube outside a silica nanowire). The third type is a biaxial silicon-silica nanowire structure with side-by-side growth of crystalline silicon and amorphous silica. These silicon nanostructures exhibit unusually intense photoluminescence (in comparison to ordinary silicon nanowires).     

Effect of chemical potential on the computer simulation of hydrogen storage in single walled carbon nanotubes

Hydrogen is a kind of clean, sustainable and renewable energy carrier. Of the problems to be solved for the utilization of hydrogen energy, how to store and transport hydrogen has been given high priority on the research agenda. Recently, carbon nanotubes (CNTs) were reported to be very promising candidates for hydrogen uptake[1], which may have possibility to satisfy the benchmark set by the US Department of Energy (DOE) Hydrogen Plan for fuel cell powered vehicles: a gravimetric density …     

In-Cage Interactions in the Clathrate Superconductor Sr8Si46

The clathrate I superconductor Sr₈Si₄₆ is obtained under high-pressure high-temperature conditions, at 5 GPa and temperatures in the range of 1273 to 1373 K. At ambient pressure, the compound decomposes upon heating at T=796(5) K into Si and SrSi₂. The crystal structure of the clathrate is isotypic to that of Na₈Si₄₆. Chemical bonding analysis reveals conventional covalent bonding within the silicon network as well as additional multi-atomic interactions between Sr and Si within the framework cages. Physical measurements indicate a bulk BCS type II superconducting state below T_c=3.8(3) K.     

Formation of silicon carbide nanotubes and nanowires via reaction of silicon (from disproportionation of silicon monoxide) with carbon nanotubes

One-dimensional silicon-carbon nanotubes and nanowires of various shapes and structures were synthesized via the reaction of silicon (produced by disproportionation reaction of SiO) with multiwalled carbon nanotubes (as templates) at different temperatures. A new type of multiwalled silicon carbide nanotube (SiCNT), with 3.5-4.5 A interlayer spacings, was observed in addition to the previously known beta-SiC (cubic zinc blende structure) nanowires and the biaxial SiC-SiO(x) nanowires. The SiCNT was identified by high-resolution transmission microscopy (HRTEM), elemental mapping, and electron energy loss spectroscopy (EELS). The multiwalled SiCNT was found to transform to a beta-SiC crystalline structure by electron beam annealing under TEM.     

Iron silicide root formation in carbon nanotubes grown by microwave PECVD

Aligned carbon nanotubes have been grown using microwave plasma enhanced chemical vapor deposition (PECVD). The carbon nanotubes are nucleated from iron catalyst particles which, during growth, remain adherent to the silicon substrates. By analysis with high-resolution electron microscopy, we observe iron silicide roots penetrating into the silicon substrate at the interface of the catalyst particles and the substrate, thus providing strong adhesion of the carbon nanotubes onto the substrate. The iron silicide roots assist in the attachment of the catalyst particles to the substrate and play a role in the evolution of the catalyst particle morphology and resulting base growth mode. Carbon nanotubes grown by microwave PECVD could exhibit superior electrical and thermal transport properties over other PECVD processes, so an understanding of the growth mechanism is important for utilization in device applications.     

Silicon carbide nanotubes and nanotubular fibers: Synthesis, stability, structure, and classification

Published data on silicon carbide nanotubes (SiC-NT) are analyzed. According to theoretical calculations, single-layer SiC-NTs do not dissociate, but they have not yet been detected experimentally. According to the experimental data, metastable SiC-NTs with walls consisting of several layers and nanotube fibers were produced. The optimized structure of single-layer SiC-NTs was calculated by the RHF/6-31G quantum-chemical method. The possibility of obtaining SiC-NTs by gas-phase chemical deposition from methyltrichlorosilane in the temperature range of 800–1000 °C was investigated. Nanofibers and polygrained SiC nanotubes were obtained, but ordinary layer SiC nanotubes were not detected. To remove the inconsistencies it was first proposed to classify the nanotubes according to the structure of their walls, separating all the SiC-NTs into three types: 1) ordinary layer nanotubes with rolled layers, similar to carbon nanotubes; 2) polynanocrystalline nanotubular fibers or nanotubes with walls consisting of linked differently oriented nanograins; 3) monocrystalline synthetic nanotubes with ideal crystalline walls. It was concluded that the ordinary SiC-NTs of the first type are unstable with the exception of one-or two-layer nanotubes; stable SiC-NTs of the first type and SiC-NTs of the third type have not yet been discovered; only nanotubular fibers of the second type were obtained experimentally. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 42, No. 1, pp. 3–13, January–February, 2006.     

竹节状硅纳米管的制备及锂离子嵌入/脱出性能研究

应用改进的化学气相沉积法,成功地合成出一种新的竹节状硅纳米管材料.微电极循环伏安测试表明:锂离子在该硅纳米材料中可能存在两种嵌入位,即实心节部嵌入位和空心管壁嵌入位.作为锂离子电池负极材料,该材料也在一定程度上抑制了一般硅材料所面临的体积效应问题.     

Silicon- and carbon-based anode materials: Quantum-chemical modeling

With the aim of searching for promising anode materials for lithium-ion batteries, we performed quantum-chemical modeling of the structure, stability, and electronic properties of silicon-coated carbon nanotubes, silicon rods, and silicon carbide fibers by the density functional theory method including gradient correction and periodic boundary conditions. It has been demonstrated that nanotubes poorly hold silicon, whereas silicon firmly adheres to the SiC surface. Silicon rods are more favorable than clusters and have the stability close to that of the crystal. The band gap in the rods is close to zero. Silicon carbide can be transformed into a conductor by doping with nitrogen.     

Direct attachment of well-aligned single-walled carbon nanotube architectures to silicon (100) surfaces: a simple approach for device assembly

A new approach for the attachment of vertically-aligned shortened carbon nanotube architectures to a silicon (100) substrate by chemical anchoring directly to the surface has been demonstrated for the first time. The ordered assembly of single-walled carbon nanotubes (SWCNTs) was accomplished by hydroxylating the silicon surface followed by a condensation reaction with carboxylic acid functionalised SWCNTs. This new nanostructure has been characterised by X-ray photoelectron, Raman and Fourier transform infrared (FTIR) spectroscopy as well as scanning electron and atomic force microscopy. The assembly behaviour of SWCNTs onto the silicon surface shows a fast initial step producing isolated functionalised carbon nanotubes or nanotube bundles anchored to the silicon surface followed by a slower step where the adsorbed nanotubes grow into larger aggregates via van der Waals interactions between adsorbed and solvated nanotubes. The electrochemical and optical properties of the SWCNTs directly attached to silicon have also been investigated. These new nanostructures are excellent electrochemical electrodes. They also fluoresce in the wavelength range 650-800 nm. The successful attachment of the SWCNTs directly to silicon provides a simple, new avenue for fabrication and development of silicon-based nanoelectronic, nano-optoelectronic and sensing devices. Compared to existing techniques, this new approach has several advantages including low operating temperature, low cost and the possibility of further modification.     

镍基板上低温合成定向纳米碳管

纳米碳管具有非常优异的场发射效应 ,亮度高、均匀且稳定的纳米碳管场效应发射器 ,例如平板显示器、阴极射线管以及信号灯等有着非常广阔的应用前景 [1] .由于纳米碳管的场发射效应与纳米碳管的方向性有关[2 ] ,因此定向纳米碳管的制备及其场发射性能研究是当前的一个研究热点     

发光多孔硅的化学传感特征

发光多孔是一种新型的光电器件材料。其荧光的猝灭或增敏，以及其电学特性的变化可作为化学伟感信息用于电化学传感技术。本文评述了自发光多孔硅首次报道以来在化学传感领域的应用研究进展。     

Hierarchical Structures of Carbon Nanotubes and Arrays of Chromium‐Capped Silicon Nanopillars: Formation and Electrical Properties

The formation of stochastically oriented carbon‐nanotube networks on top of an array of free‐standing chromium‐capped silicon nanopillars is reported. The combination of nanosphere lithography and chemical vapor deposition enables the construction of nanostructures that exhibit a hierarchical sequence of structural sizes. Metallic chromium serves as an etching mask for Si‐pillar formation and as a nucleation site for the formation of carbon nanotubes through the chemical vapor deposition of ethene, ethanol, and methane, respectively, thereby bridging individual pillars from top to top. Iron and cobalt were applied onto the chromium caps as catalysts for CNT growth and the influence of different carbon sources and different gas‐flow rates were investigated. The carbon nanotubes were structurally characterized and their DC electrical properties were studied by in situ local‐ and ex situ macroscopic measurements, both of which reveal their semiconductor properties. This process demonstrates how carbon nanotubes can be integrated into Si‐based semiconductors and, thus, this process may be used to form high‐surface‐area sensors or new porous catalyst supports with enhanced gas‐permeation properties.     

SiOx纳米管的制备及其发光特性

Amorphous SiOx nanotubes with homogeneous diameters were fabricated in large-scale on silicon substrate by thermal evaporation method, with liquid gallium as medium. The average diameter of tubes is about 80 nm and the length is more than 10 1m, with small ratio between the inner and outer diameter of the tube. The silicon element in the substrate and the residual oxygen element in reaction chamber were first dissolved into liquid Ga. Then the SiOx precipitated from the surface of gallium droplet, forming the nanotube structure with Ga droplet being the center. The room temperature photoluminescence measurements under excitation at 260 nm show that the SiOx nanotubes has a strong blue emission at 453 nm with two shoulders at 410 and 480 nm respectively, which may be related to oxygen defects. The preparation method improved the traditional complicated method and also provided a new way to fabricate SiOx nanotubes in large quantity.     

A first principles study of NO2 chemisorption on silicon carbide nanotubes

Using methods based on first principles, we find that an NO₂ molecules can be chemisorbed on silicon carbide nanotubes (SiCNTs) with an appreciable binding energy (∼−1.0 eV), and that this is not the case for either carbon nanotubes (CNTs) or boron nitride nanotubes (BNNTs). A detailed analysis of the energetics, geometry, and electronic structure of various isomers of the complexes was performed. The SiCNT–NO₂ complex can be metallic or nonmetallic depending on the type of adsorption site and the chirality of the tube. However, our analysis of the electronic structure predicts that a strong p-type effect of the adsorption turns semiconducting systems into metallic ones at room temperature, irrespective of the chirality of the tube.     

Synthesis of bifunctional polymer nanotubes from silicon nanowire templates via atom transfer radical polymerization

As a way to control the surface properties of nanowires and nanotubes, we present a method for growing polymer from the surface of silicon/silica core/shell nanowires. After modification of nanowire surfaces with polymer initiators, Atom Transfer Radical Polymerization (ATRP) was used to grow methacrylate polymer chains from the surface. The resulting structures were characterized by SEM, TEM, and EELS. After etching the silicon cores, the resulting polymer-coated nanotubes will have hydrophilic silica cores with hydrophobic polymer shells.     

Silicon nanotube anode for lithium-ion batteries

This work describes a promising strategy for large-scale fabrication of silicon (Si) nanotubes. The process began with preparation of silica nanotubes using rod-like NiN₂H₄ as a template and the resulting silica nanotubes were then converted to Si nanotubes by a thermal reduction process assisted with magnesium powder. The electrochemical properties of Si nanotubes were investigated as anode of lithium-ion batteries. It was demonstrated that the as-developed Si nanotubes showed significantly improved rate capability and long-term cycling performance compared with commercial silicon meshes.     

Cryogenic separation of hydrogen isotopes in single-walled carbon and boron-nitride nanotubes: insight into the mechanism of equilibrium quantum sieving in quasi-one-dimensional pores

Quasi-one-dimensional cylindrical pores of single-walled boron nitride and carbon nanotubes efficiently differentiate adsorbed hydrogen isotopes at 33 K. Extensive path integral Monte Carlo simulations revealed that the mechanisms of quantum sieving for both types of nanotubes are quantitatively similar; however, the stronger and heterogeneous external solid-fluid potential generated from single-walled boron nitride nanotubes enhanced the selectivity of deuterium over hydrogen both at zero coverage and at finite pressures. We showed that this enhancement of the D(2)/H(2) equilibrium selectivity results from larger localization of hydrogen isotopes in the interior space of single-walled boron nitride nanotubes in comparison to that of equivalent single-walled carbon nanotubes. The operating pressures for efficient quantum sieving of hydrogen isotopes are strongly depending on both the type as well as the size of the nanotube. For all investigated nanotubes, we predicted the occurrence of the minima of the D(2)/H(2) equilibrium selectivity at finite pressure. Moreover, we showed that those well-defined minima are gradually shifted upon increasing of the nanotube pore diameter. We related the nonmonotonic shape of the D(2)/H(2) equilibrium selectivity at finite pressures to the variation of the difference between the average kinetic energy computed from single-component adsorption isotherms of H(2) and D(2). In the interior space of both kinds of nanotubes hydrogen isotopes formed solid-like structures (plastic crystals) at 33 K and 10 Pa with densities above the compressed bulk para-hydrogen at 30 K and 30 MPa.     

Investigation of the electrical resistance of single-walled carbon nanotube films in the temperature range 4.2–290 K

Electrical resistance of films made of the source material and purified HiPCO and Arc single-walled carbon nanotubes (SWCNTs) with a thickness of 20−40 μm is 2.4 to 45 Ω (electrical conductivity of 0.42 × 10³ to 5.03 × 10³ S/m) at room temperature. The films have been formed by vacuum microfiltration of SWCNT suspensions in toluene and characterized by Raman and X-ray photoelectron spectroscopy and scanning electron microscopy. The conductivity of the films at room temperature depends on the type and degree of purity of the material of nanotubes. The resistance of the films decreases with the increasing temperature over the range of 4.2–290 K, and the rate of the step-down decreases with increasing purity of the material of the nanotubes. The conductivity of the films is semiconducting in character, and the electron transport is consistent with three-dimensional hopping conductivity.     

Physico-chemical control over the single- or double-wall structure of aluminogermanate imogolite-like nanotubes

It is known that silicon can be successfully replaced by germanium atoms in the synthesis of imogolite nanotubes, leading to shorter and larger AlGe nanotubes. Beside the change in morphology, two characteristics of the AlGe nanotube synthesis were recently discovered. AlGe imogolite nanotubes can be synthesized at much higher concentrations than AlSi imogolite. AlGe imogolite exists in the form of both single-walled (SW) and double-walled (DW) nanotubes, whereas DW AlSi imogolites have never been observed. In this article, we give details on the physicochemical control over the SW or DW AlGe imogolite structure. For some conditions, an almost 100% yield of SW or DW nanotubes is demonstrated. We propose a model for the formation of SW or DW AlGe imogolite, which also explains why DW AlSi imogolites or higher wall numbers for AlGe imogolite are not likely to be formed.