Intersubband transitions in quantum wells under intense laser field

An intense laser field effect on the intersubband transitions in quantum wells is theoretically investigated within the framework of the effective-mass approximation. Results obtained show that intersubbband optical transitions and energy levels in quantum wells can be significantly modified and controlled by an intense laser field. PACS 71.55.Eq; 73.21.Fg; 78.67.De     

Intersubband scattering of cold electrons in a coupled quantum well with subband spacing below

We report measurements of the intersubband scattering rate between the first and second subband in a quantum-well structure with subband spacing (11 meV) smaller than the optical phonon energy. We measure the electron population in the second subband under CW excitation by a far-infrared laser tuned to the intersubband absorption frequency. This allows us to determine the intersubband relaxation rate using detailed balance. These measurements are novel because they are performed at very low excitation densities (I10 μW/cm²). In this regime the heating of the electron gas is negligible, so that the optically excited population in the upper subband greatly exceeds any thermal population induced by laser heating. Therefore, the relaxation rate we measure is controlled by intersubband scattering rather than carrier cooling. At low temperature we obtain an intersubband lifetime of which is power independent below 10⁻¹ W/cm², and approximately temperature independent for lattice temperatures between T=10 and 2.5 K.     

Phase transitions in a system of two coupled quantum wells

It is predicted that an excitonic liquid is formed in a system of spatially separated electrons (e) and holes (h) in a system of two coupled quantum wells. The ground-state energy and the equilibrium density of the excitonic liquid are calculated as a function of the distance D between the wells. A gas-liquid quantum transition with increasing D is studied. The Berezinskii-Kosterlitz-Thouless transition temperatures at which superfluidity appears in the system are found (for different D). A quantum Mott metal-insulator transition in an anisotropic double-quantum-well structure is investigated. The region of existence of crystalline order in a system of spatially separated e and h is studied. Possible experimental manifestations of the predicted effects are discussed. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 8, 526–531 (25 October 1996)     

Intraband transitions in magnetoexcitons in coupled double quantum wells

A theory of far-infrared (FIR) magneto-optical intraband s→p ^± transitions of direct and indirect excitons in semiconductor coupled double quantum wells has been developed. The case of symmetric strained In_xGa_1−x As/GaAs quantum wells with nondegenerate valence band in the regime of both narrow and wide barriers has been analyzed. The energies and dipole matrix elements of transitions between the ground s and excited p ^± states in a quantizing magnetic field B>2 T and electric field ℰ perpendicular to the quantum well plane have been studied. The regimes of direct (in a weak electric field) and indirect (in a strong electric field) transitions, and the transition between the direct and indirect regimes, have been investigated. Zh. éksp. Teor. Fiz. 113, 1446–1459 (April 1998)     

Strain dependence of valence band structure and intersubband transitions in coupled quantum wells

We have calculated the structure of the valence bands and its dependence on strain in a lattice mismatched quantum well, and in double quantum wells with equal and unequal well thicknesses. We have used the 4×4 Luttinger-Kohn Hamiltonian and the envelope function approximation. Further the character of the strain dependence of optical transitions in valence band was analysed in all of these structures. It has been found that the strain dependence of the valence band structure and optical momentum matrix elements is stronger in the double quantum well than in the single quantum well. This result is potentially useful in valence band engineering and device applications.     

Intersubband transitions in quantum well mid-infrared photodetectors

A study of intersubband transitions in quantum well infrared detectors working at high temperatures has been reported. This study allows a greater tunability in the device designs, with the ability to control the peak wavelength, the absorption coefficient, the dark current, the quantum efficiency and the detectivity of the modeled structure operating around 3.3 μm wavelength. The detection energy and absorption coefficient dependences with an applied electric field are given. Then, the electro-optic performances of the modeled mid-infrared detector are estimated, the dark current dependence with the applied voltage and temperature as well as the quantum efficiency and the detectivity are investigated and discussed. High detectivities were found at high temperatures revealing the good performances of the designed photodetector, especially at 3.3 μm wavelength.     

Intersubband transitions in band gap engineered parabolic potential wells

Intersubband transitions in spike-inserted wide parabolic quantum wells are investigated. A thin potential barrier within the pure parabola devides the electron system in two well separated but strongly coupled layers, which in turn drastically changes the collective excitations scheme. In contrast to a pure parabolic quantum well where according to the generalised Kohn's Theorem only one fixed resonance is observed, the collective intersubband transitions recover the complex coupling and splitting scheme of the single particle states of a strongly coupled system. We interpret our experimental findings in terms of resonant tunnel processes and discuss them using simple model calculations.     

Intersubband optical absorption of holes in quantum wells

The problem of hole energy spectrum and interlevel optical absorption in p -type quantum wells is considered theoretically. To obtain analytical results, terms in the Luttinger Hamiltonian containing in-plane momentum are treated as a perturbation. In this approximation energy spectrum, wave functions, hole statistics and interlevel optical matrix elements can be found for an arbitrary shape of quantum well. Finally, optical absorption spectra are calculated for different interlevel transitions.     

Intersubband absorption in highly photoexcited semiconductor quantum wells

Transient mid infrared (MIR) absorption spectroscopy is used to investigate transitions between higher electronic subbands in semiconductor quantum well (QW) structures after interband photoexcitation with intense picosecond pulses in the visible spectral range. Our investigation focuses on the e₂–e₃ intersubband transition in an asymmetric undoped GaAs/AlGaAs QW structure. At an injected nonequilibrium carrier density of 1×10¹³ cm⁻²/QW, an e₂–e₃ absorption band at 99 meV with a spectral width of 5 meV is found. For a higher density studied, 3×10¹³ cm⁻²/QW, the band is broadened and blueshifted by 30 meV. Intersubband absorption signals are distinguished from free-carrier absorption signals in the MIR by their characteristic time behavior.     

Intersubband transitions in an asymmetric double quantum well

The intersubband optical absorption in an asymmetric double quantum well for different barrier widths and the right well widths are theoretically calculated within the framework of effective mass approximation. The results obtained show that the intersubband transitions and the energy levels in an asymmetric double quantum well can be importantly modified and controlled by the barrier width and the well width. The sensitivity to the barrier and well widths of the absorption coefficient can be used in various optical semiconductor device applications.     

Signatures of discontinuity in the exchange-correlation energy functional derived from the subband electronic structure of semiconductor quantum wells

The discontinuous character of the exact-exchange-correlation (xc) energy functional of density functional theory is shown to arise naturally in the subband spectra of semiconductor quantum wells. Using an ab initio xc functional, including exchange exactly and correlation in an exact partial way, a discontinuity appears in the xc potential, each time a subband becomes slightly occupied. Exchange and correlation give opposite contributions to the discontinuity, with correlation overcoming exchange. The jump in the intersubband energy is in excellent agreement with experimental data.     

Intersubband optical absorption in two-level quantum wells embedded in a planar microcavity

A theoretical analysis of the optical absorption including both the linear and third-order non-linearity arising from intersubband transitions in two-level quantum wells, which are embedded in a planar microcavity, has been performed. Starting from the Maxwell–Lorentz equations, the expressions of the field in each layer are explicitly given, and the field in the quantum wells is determined via an integral equation, in which the third-order non-linearity is included. Then, by matching the boundary conditions, the field in the quantum-well microcavity structure is rigorously determined, and the absorption coefficient is thus obtained. Detailed numerical calculations show that the optical intersubband absorption can be significantly modified due to the coupling between the quantum wells and the microcavity. This revised version was published online in November 2006 with corrections to the Cover Date.     

Intersubband transitions and refractive index changes in coupled double quantum well with different well shapes

In this study, both the linear intersubband transitions and the refractive index changes in coupled double quantum well (DQW) with different well shapes for different electric fields are theoretically calculated within framework of the effective mass approximation. Results obtained show that intersubband transitions and the energy levels in coupled DQW can importantly be modified and controlled by the electric field strength and direction. By considering the variation of the energy differences, it should point out that by varying electric field we can obtain a blue or red shift in the intersubband optical transitions. The modulation of the absorption coefficients and the refractive index changes which can be suitable for good performance optical modulators and various infrared optical device applications can be easy obtained by tuning applied electric field strength and direction.     

Intersubband absorption in strained AlGaN/GaN double quantum wells

The intersubband absorption of the four-energy-level system in strained AlGaN/GaN double quantum wells is calculated by considering the polarization effect and the strain modification on material parameters (e.g., the conduction band offset, the electron effective mass and the static dielectric constant). It is found that the electron wavefunctions mainly locate at the left well and penetrate into the left barrier. The absorption spectrum exhibits multiple peaks contributed by different transitions. The position and height of absorption peaks are not very sensitive to the structural parameters (i.e., composition and thickness) of the central barrier because of the strong built-in electric field. However, the coupling between two wells can be enhanced by strain modulation.     

Intersubband optical transitions in one dimensional quantum wire structures

One dimensional (1D) quantum wire structures are emerging as the new generation of semiconductor nanostructures offering exciting physical properties which have significant potential for novel device applications. These structures have been the subject of intensive investigation recently including extensive theoretical and experimental studies of their interband optical properties. In this work we present the results of our study of the intersubband optical transitions in 1D semiconductor quantum wires. The crescent shaped quantum wire structures used for this research were grown on non-planar GaAs substrates. The intersubband transition energy spectra, the selection rules, and the two dimensional envelope wavefunctions were theoretically investigated by using our new LENS (local envelope states) expansion. We present recent experimental results on modulation doped V-groove quantum wires, including PL, PLE, TEM, CL, and infrared polarization resolved spectroscopy. We have observed a very unusual absorption lineshape at the far-infrared wavelengths that we assigned to phonon assisted Fano resonance in a modulation doped quantum wire structure.     

Intersubband absorption with difference-frequency generation in GaAs asymmetric quantum wells

An asymmetric quantum well(AQW) is designed to emit terahertz(THz) waves by using difference frequency generation(DFG) with the structure of GaAs/Al 0.2 Ga 0.8 As/Al 0.5 Ga 0.5 As.The characteristics of absorption coefficients are analysed under the parabolic and non-parabolic energy-band conditions in detail.We find that the absorption coefficients vary with the two pump optical intensities,and they reach the maxima when the pump wavelengths are given as λ p1 = 9.70 μm and λ p2 = 10.64 μm,respectively.Compared with non-parabolic conditions,the total absorption coefficient under parabolic conditions shows a blue shift,which is due to the increase in the energy difference between the ground and excited states.By adjusting the two pump optical intensities,the wave vector phase-matching condition inside the AQW is satisfied.     

Intersubband spin-orbit coupling and spin splitting in symmetric quantum wells

In semiconductors with inversion asymmetry, spin-orbit coupling gives rise to the well-known Dresselhaus and Rashba effects. If one considers quantum wells with two or more conduction subbands, an additional, intersubband-induced spin-orbit term appears whose strength is comparable to the Rashba coupling, and which remains finite for symmetric structures. We show that the conduction band spin splitting due to this intersubband spin-orbit coupling term is negligible for typical III-V quantum wells.