金属颗粒薄膜巨磁电阻效应的影响因素

研究金属颗粒薄膜的颗粒尺寸、磁性组分等对巨磁电阻效应的影响.在自由电子模型和自旋相关散射理论的基础上，计算了金属颗粒膜体系的电子平均散射势.在计算过程中将自旋相关项与宏观量相联系，得到了巨磁电阻效应与磁性成分比例、颗粒尺寸的关系.磁电阻效应的模拟曲线表明，增加磁性成分比例和减小磁性颗粒尺寸可增强颗粒膜的巨磁电阻效应. 关键词：     

Enhanced granular magnetoresistance due to ferromagnetic layers

Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structures has been investigated. Direct experimental evidence is given, showing that inserting ferromagnetic layers into a granular structure significantly enhances the magnetoresistance. The increase in the GMR effect is attributed to spin polarization effects. The large enhancement (up to more than a fourfold value) and the linear variation of the GMR in low magnetic fields are explained by scattering of the spin polarized conduction electrons on paramagnetic grains.     

Quantum analytical theory for giant magnetoresistance in magnetic multilayered film systems

Taking into account the quantum size effects and considering three types of scattering from bulk impurities, rough surfaces, and rough interfaces, we use the quantum-statistical Green's function approach and Kubo theory to calculate the giant magnetoresistance (GMR) in magnetic multilayered structures. Our calculation can reproduce the main features of GMR experiments, including the oscillations of GMR with nonmagnetic thickness, and the GMR increases with increasing number of bilayers N of the (Fe/Cr)_N/Fe system and others. As well, the question whether or not the scattering rates due to the impurities, surfaces, and interfaces add up is also addressed to.     

Universal relationship between giant magnetoresistance and anisotropic magnetoresistance in spin valve multilayers

We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the spin-up and spin-down electrons, seen in the anisotropic magnetoresistance. We find that the difference of the GMR in the two configurations, when expressed in terms of the sheet conductance, displays a nearly universal behavior as a function of GMR. On interpreting the results within the Boltzmann transport formalism we demonstrate the importance of bulk scattering for GMR.     

Analysis of the magnetoresistance contributions in a nanocrystallized Cr-doped FINEMET alloy

The magnetoresistance (MR) was measured at 200, 250 and 300 K in magnetic fields up to B=12 T for a nanocrystallized Fe_63.5Cr₁₀Nb₃Cu₁Si_13.5B₉ alloy. Both the longitudinal (LMR) and transverse (TMR) component of the magnetoresistance decreased from B=0 to about 0.1 T. This could be ascribed to a giant MR (GMR) effect due to spin-dependent scattering of conduction electrons along their path between two Fe-Si nanograins via the non-magnetic matrix. Such a scattering may occur if the nanograin moments are not or only weakly coupled in the absence of a strong exchange coupling (due to the high Cr content in the matrix) and/or only weak dipole-dipole coupling is present (due to sufficiently large separations between the nanograins). For larger fields, the GMR saturated and a slightly nonlinear increase in MR with B was observed due to a contribution by the residual amorphous matrix. The anisotropic MR effect (AMR≡LMR−TMR) was negative for all fields and temperatures investigated. By measuring the MR of melt-quenched Fe_100−xSi_x solid solutions with x=15, 18, 20, 25 and 28, the observed AMR could be identified as originating from the Fe-Si nanograins having a D0₃ structure.     

[Fe/Cr]多层膜及掺入Si中介层后的层间耦合和磁电阻效应

用真空蒸镀方法制备了［Ｆｅ／Ｃｒ］，［Ｆｅ／Ｃｒ／Ｓｉ］和［Ｆｅ／Ｓｉ］多层膜．研究了Ｃｒ层、Ｓｉ层和Ｃｒ＋Ｓｉ层厚度变化对层间耦合和磁电阻的影响．Ｆｅ层厚为２ｎｍ，Ｃｒ层厚度变化存在耦合振荡和巨磁电阻及其振荡．磁电阻值为１４.６％（４.２Ｋ）．在Ｃｒ层中加入一半Ｓｉ层或全部由Ｓｉ层替代，振荡消失，磁电阻减小到千分之几．根据掺Ｓｉ层后多层膜的电阻率变化，认为Ｓｉ加入使非磁层中自由电子数减少，随之极化效应也变弱，导致振荡消失，磁电阻大为降低 关键词：     

Giant magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems

We theoretically investigate the giant magnetoresistance (GMR) effect in general magnetically modulated semiconductor nanosystems, which can be realized experimentally by depositing two parallel ferromagnetic strips on the top of a heterostructure. Here the exact magnetic profiles and arbitrary magnetization direction of ferromagnetic strips are emphasized. It is shown that a considerable GMR effect can be achieved in such nanosystems due to the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio is strongly influenced by the magnetization direction of ferromagnetic strips in nanosystems, thus possibly leading to tunable GMR devices.     

GMR enhancement in spin valves structures with nano-semiconducting layer

We report on the giant magnetoresistance enhancement in Co/Ru/Co-based spin valve structures with nano-semiconducting layer. The films were grown by ion beam sputtering on glass substrate at room temperature. The soft layer is composed of Fe/Co bilayers, while the hard layer is ensured by the Co/Ru/Co artificial antiferromagnetic subsystem (AAF) as follows: Fe_5nm/Co_0.5nm/Cu_3nm/Co_3nm/Ru_0.5nm/Co_3nm/Cu_2nm/Cr_2nm. This structure shows a giant magnetoresistance (GMR) signal of about 1.7%. To confine the electrons inside the spin valve structure, a 1.5 nm thick ZnSe semiconducting layer has been grown on the top of the AAF. This induces a strong GMR increase, up to 4%, which can be attributed to a dominant potential step at the Co/ZnSe interface.     

磁性多层薄膜系统中的巨磁电阻效应

考虑到量子尺寸效应以及来自杂质、粗糙表面、粗糙界面三方面的散射,运用量子统计格林函数方法和久保理论,计算了磁性多层薄膜系统中的巨磁电阻,讨论了巨磁电阻随非磁层厚度作周期性振荡,以及在(Fe/Cr)_N/Fe系统中巨磁电阻随多层基元数目N增加而增大等现象.理论计算与实验结果符合.此外,还讨论了有关各种散射引起的散射率能否相加的问题. 关键词：     

Magnetoresistance of Fe3O4/Au/Fe3O4 and Fe3O4/Au/Fe spin-valve structures

A detailed study of the in-plane magnetotransport properties of spin valves with one and two Fe₃O₄ electrodes is presented. Fe₃O₄/Au/Fe₃O₄ spin valves exhibit a clear anisotropic magnetoresistance in small magnetic fields but no giant magnetoresistance (GMR). The absence of GMR in these structures is due to simultaneous magnetization reversal in the two Fe₃O₄ layers. By contrast, a negative GMR effect is measured on Fe₃O₄/Au/Fe spin valves. The negative GMR is attributed to an electron spin scattering asymmetry at the Fe₃O₄/Au interface or an induced spin scattering asymmetry in the Au interfacial layers.     

It's the coupling that creates resistance: Spin electronics in layered magnetic structures

Fast‐paced technological advancement is squeezing the data on computer hard disks ever closer together. For some ten years now, continuously shrinking and increasingly sensitive read/write heads are making use of the giant magnetoresistance (GMR) effect discovered in 1988. This term was coined for the effect that electric resistance of a magnetic layer system changes dramatically when the magnetization of the individual layers is reversed from antiparallel to parallel orientation. Very small external magnetic fields suffice to change the orientation and thus give GMR read/write heads their high sensitivity.     

Giant magnetoresistance and magnetothermopower in Co/Cu multilayers

The thermopower (Seebeck coefficient, S) has been measured on a series of Co/Cu multilayers that exhibit giant negative magnetoresistance (GMR). Negative in zero applied field, S(H) increases in magnitude as the field is increased, approaching that of bulk Co. The change in S is inversely proportional to the resistance of the sample which is, in turn, proportional to the square of the magnetization. A model is presented that yields both the GMR and S(H) from the spin-split density of states of the Co without the need of a spin-dependent scattering potential at the interfaces.     

Magnetoresistance of lanthanum manganites with activation-type conductivity

The temperature dependence of the resistivity and magnetic moment of La_0.85Ba_0.15MnO₃ and La_0.85Sr_0.15MnO₃ manganite single crystals in magnetic fields up to 90 kOe is investigated. Analysis of the experimental results shows that the magnetoresistance of lanthanum manganites far from the Curie temperature T _C can be described quantitatively by the s-d model normally used for ferromagnets and taking into account only the exchange interaction between the spins of charge carriers and magnetic moments. These data also show that the features of lanthanum manganites responsible for colossal magnetoresistance (CMR) are manifested in a narrow temperature interval δT ≈ 20 K near T _C. Our results suggest a CMR mechanism analogous to the mechanism of giant magnetoresistance (GMR) observed in Fe/Cr-type multilayers with nanometer layer thickness. The nanostratification observed in lanthanum manganites and required for GMR can be described taking into account the spread in T _C in the CMR range δT.     

不同过渡层上Co/Cu/Co三明治结构的巨磁电阻效应研究

通过对不同过渡层上Co(5.5nm)/Cu(3.5nm)/Co(5.5nm)三明治结构的研究,发现过渡层的磁性及过渡层诱导的三明治晶格结构对材料的巨磁电阻效应有重要影响.反铁磁Cr过渡层由于和相邻铁磁Co层之间存在着反铁磁耦合,可以获得6％以上的巨磁电阻值,但它同时使材料的矫顽力较大,因此磁灵敏度不高.Ni和Ti过渡层上Co/Cu/Co三明治结构,由于形成了强的（111）织构,其巨磁电阻值也达到5％以上.磁性材料Ni过度层还使三明治结构材料的矫顽力大为下降,从而显著提高了材料的磁灵敏度. 关键词：     

Effects of oxidation and cluster distribution on thermal and magnetotransport properties of mechanically alloyed Co–Cu powders

Thermal and magnetotransport properties of mechanically alloyed Co₃₀Cu₇₀ powders of three different milling times are studied. Both milling and annealing bring about oxidation of the samples. The powders show exothermic behaviors corresponding to the lattice-recovery process. Different milling times and annealing temperatures give rise to different exothermic peaks because of oxidation and the cluster distribution. At room temperature, the compressed powders show, on average, up to 11% giant magnetoresistance (GMR) under 10 kOe with sharp switching. The results may be understood in terms of spin-dependent scattering across Co/oxide/Cu interfaces. Annealing reduces the resistance but does not promote the GMR. By annealing at 400 °C, the GMR is entirely suppressed as the magnetic content is largely replaced by oxides. PACS 72.15.Eb; 75.47.De; 75.47.Np     

Application of magnetically modulated microwave absorption to study of giant magnetoresistance effect in the Ni−Fe/Cu multilayer system

Magnetically modulated microwave absorption (MMMA), magnetic hysteresisM(H), giant magnetoresistance (GMR) and ferromagnetic resonance (FMR) have been examined in the antiferro-magnetically coupled Py/Cu (Py=Ni₈₃Fe₁₇, permalloy) multilayer system. The correlation between results obtained by the MMMA technique, the standard GMR measurements, and magnetization reversal studies is shown. Microwave studies of GMR, magnetization reversal, and FMR for different orientations of the magnetic field with respect to the sample surface are presented.     

Microcharacterization of the surface oxidation of Py/Cu multilayers by scanning X-ray absorption spectromicroscopy

The local surface oxidation of the permalloy surface layer in Py/Cu GMR multilayers on a micron lateral scale has been analyzed by means of a microspot-X-ray absorption spectromicroscope utilizing synchrotron radiation from the Advanced Light Source bending magnet beamline 6.3.2. Additionally, the GMR multilayer samples prepared by dc magnetron sputtering have been analyzed by cross-sectional transmission electron microscopy, hard X-ray reflection and magnetoresistance measurements. The formation of a passivating iron-oxide layer on the sample surface was identified by X-ray absorption near edge structure spectroscopy (XANES) near the Fe-2p edge while no indication for nickel-oxide formation could be found. Small micron-size pits of reduced iron-oxide concentration could be identified by XANES microscopy while the corresponding nickel distribution appeared to be homogeneous. The results are explained in terms of a local breakdown of the passivating oxide layer. Received:16 October 2000 / Accepted: 4 December 2000 / Published online: 21 March 2001     

Magnetoresistance in the variable-range hopping conduction regime in diluted arrays of quantum dots with the filling factor 2 < η < 3

Magnetoresistance mechanisms in an array of quantum dots with hopping conduction, which is determined by electronic states with the orbital angular momentum l = 1, and filling factor 2 < ν < 3 have been considered. The magnetoresistance mechanism associated with the existence of the nodal planes of the wavefunctions of such electrons has been analyzed in detail. The dependence of this mechanism on both the shape of quantum dots and the dimension of the array has been examined including the spin-orbit interaction and effects associated with the interference of tunneling paths. Also it has been shown that a change in the energy of the orbital motion of the electron with l = 1 in the magnetic field leads to an additional mechanism of positive magnetoresistance proportional to the square of the field.     

Giant magnetoresistance in Ce-doped manganite systems

The fascinating properties like giant magnetoresistance (GMR) effect, metal-insulator transition, charge ordering phenomenon etc. have made the divalent ion doped RMnO₃ (R = rare-earth elements) an attractive system for investigation. Resistivity of these compounds shows a peak near the ferromagnetic transition temperature (T _c ). The application of magnetic field inhibits the spin-disorder scattering and the resistivity decreases drastically. Keeping electrondoped superconductor Nd_2?x Ce _x CuO₄ in mind we have doped RMnO₃ (R = La, Pr, Nd) with tetravalent Ce ion. These compounds are very susceptible to the annealing treatment and belong to the orthorhombic perovskite phase. They show a very high value of resistivity at the peak and under the magnetic field the GMR effect is observed. For La_0.7Ce_0.3MnO₃ and Pr_0.7Ce_0.3MnO₃ the magnetoresistance ratio reaches about 54% and 82.5% respectively at 7.7 T. With the increase of the temperature the magnetic state changes from ferromagnetic to paramagnetic regime. This magnetic transition is not very sharp and the resistivity peak appears at a temperature higher than T _c .     

磁性多层膜的巨磁电阻随铁磁和非磁层厚度变化的唯象理论计算

根据唯象理论，并采用以铁磁─非磁混合层代替铁磁／非磁层界面的理论方法，计算了Ｆｅ／Ｃｒ多层膜的巨磁电阻随铁磁和非磁层厚度的变化关系与实验结果做了比较，发现它们符合得较好．还绘出了巨磁电阻随铁磁和非磁层厚度变化的二元函数图 关键词：