Dispersion and the electron–phonon interaction in a single heterostructure

We investigate the electron–phonon interaction in a polar–polar single heterostructure through the use of the linear combination of hybrid phonon modes, considering the role of longitudinal optical, transverse optical and interface modes, using a continuum model that accounts for both mechanical and electrical continuity over a heterostructure interface. We discuss the use of other models for such systems, such as the bulk phonon (3DP) and dielectric continuum (DC) models, using previously developed sum-rules to explain the limitations on their validity. We find that our linear combination (LC) model gives an excellent agreement with scattering rates previously derived using the 3DP and DC models when the lattice dispersion is weak enough to be ignored, however, when there is a noticeable lattice dispersion, the LC model returns a different answer, suggesting that interface modes play a much greater part in the scattering characteristics of the system under certain conditions. We also discuss the remote phonon effect in polar/polar heterostructures.     

Tailoring electron–phonon interaction in nanostructures

Efficient design of optoelectronic devices based on electron intersubband transitions depends critically on the knowledge of the intersubband relaxation times which in turn, depends on electron scattering with LO and acoustic phonons. In this article the intersubband scattering time associated with electron–acoustic-phonon interaction has been discussed in terms of phonon mode quantization and phonon confinement with describing the acoustic phonon dispersion relation in detail by introducing the cut-off frequency for each mode. It has been shown that the quantization of acoustic phonon modes lead to an enhancement in electron–phonon scattering time in AlGaAs quantum well structures. Based on the presented model, a new tailoring method has presented to adjust the electron–phonon scattering time in intersubband-transition-based structures while keeping the electronic properties unaltered. Also, we illustrated that for a quantum well with subband energy separation of ∼30 meV, the intersubband scattering time with acoustic-phonon-assisted transitions could be tailored from ∼120 ps to increased value of ∼400 ps or reduced value of ∼45 ps by inserting a 1 nm-thickacoustically soft or hard layers, respectively, while keeping the same the initial energy separation.     

The effects of electron–phonon interaction on anisotropic RKKY interaction in graphene nanoribbon

We study the Ruderman–Kittle–Kasuya–Yosida (RKKY) interaction in doped armchair graphene nanoribbon. The effects of both external magnetic field and electron-Holstein phonon on RKKY interaction have been addressed. RKKY interaction as a function of distance between localized moments has been analyzed. It has been shown that a magnetic field along the z-axis mediates an anisotropic interaction which corresponds to a XXZ model interaction between two magnetic moments. In order to calculate the exchange interaction along arbitrary direction between two magnetic moments, we should obtain both transverse and longitudinal static spin susceptibilities of armchair graphene nanoribbon in the presence of electron-phonon coupling and magnetic field. The spin susceptibility components are calculated using the spin dependent Green’s function approach for Holstein model Hamiltonian. The effects of spin polarization on the dependence of exchange interaction on distance between moments are investigated via calculating correlation function of spin density operators. Our results show the influences of magnetic field on the spatial behavior of in-plane and longitudinal RKKY interactions are different in the presence of magnetic field.     

Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

The transport properties of warm and hot electrons in selectively dopedn-Al _x Ga_1–x As/GaAs heterostructures created by electric fields up to 500 V/cm were studied by Hall effect, conductivity, and Shubnikov-de Haas measurements at lattice temperatures from 4.2 to 300 K. Hall measurements revealed a substantial decrease of electron mobility and also of sheet electron concentration at 77 K with enhanced electric field. The accelerated 2D electrons are partly scattered into the low-mobility first excited (E ₁) subband, and they are partly trapped in immobile states located in the Al_xGa_1–xAs near the interface. Consequently, two differentv(E) characteristics were obtained at 77 K. The 2D electrons populating only the lowest (E ₀) subband exhibit a velocity of v-2×10⁷ cm/s at 500 V/cm, while the averaged velocity due to all electrons reaches a value of v-1.5×10⁷cm/s at 500 V/cm. The analysis of the Shubnikov-de Haas oscillations and Fast Fourier transformation of the data manifested that the 2D electrons are very rapidly accelerated at 4.2 K and achieve electron temperatures much higher than the lattice temperature at electric fields as low as 1 V/cm. The major cooling process for these electrons is scattering into the low-mobilityE ₁ subband.     

Raman scattering study of Al/Ga interdiffusion in ion-implanted and annealed GaAsGa1−xAlxAs superlattices

The Al/Ga interdiffusion after annealing has been characterized by Raman scattering on a GaAsGa_1−xAl_xAs superlattice where different densities of damage had been initially induced by implantation of electrically inactive isoelectronic elements, ³¹P⁺, in order to eliminate the impurity charge associated effects. To probe the mixing beyond the damaged zone of the superlattice, complementary Auger and SIMS experiments have implantation induced defects proceeds from the examination of the whole set of results.     

Inelastic effect of electron–phonon interactions in tunnelling magnetoresistance of a single metallofullerene

The effects of elastic and inelastic electron–phonon interactions on current–voltage characteristic and tunnelling magnetoresistance (TMR) of Li@C₅₉X (X = N, B) molecule that is coupled to two ferromagnetic electrodes was investigated using the non-equilibrium Green's function (NEGF) method. Our results by taking also into consideration spin degrees of freedom (excluding spin-mixing effects) indicate that the presence of inelastic electron–phonon interaction polaron formation increases current and shifts the TMR behaviour to higher values. Also, an increase of two orders of magnitude observed in current for Li@C₅₉B compared to C₆₀.     

Optical phonon self-energies in titanium phases: effects of electron–phonon interaction

Temperature-dependent Raman investigations of titanium in the α and pressure-quenched ω-phase have been carried out. The results obtained suggest the possible coexistence of both phases at ambient pressure and low temperatures. Comparison of the low-temperature E_2g phonon self-energies in both phases with simulations based on the calculated electronic structures for α- and ω-Ti implies significant contributions from non-adiabatic electron–phonon interactions.     

Fano-like electron–phonon interference in δ-doping GaAs superlattices

The interaction between electron excitations and LO phonons is studied by Raman scattering inδ-doping GaAs superlattices. The Raman spectra measured close to the E₀ +  Δ₀resonance of GaAs present Fano-like coupling of the LO phonons with the quasicontinuum single-particle electron excitations. Due to the self-consistent origin of the electron-energy spectrum in δ-doping superlattices the resonance of the Fano interference was found to be strongly dependent on the electron density as well as the excitation energy.     

Effect of electron–phonon interaction on surface states in wurtzite nitride semiconductors under pressure

A variational theory is proposed to study the electronic surface states in semi-infinite wurtzite nitride semiconductors under the hydrostatic pressure. The electronic surface state energy level is calculated, by taking the effects of the electron–Surface–Optical–phonon interaction, structural anisotropy and the hydrostatic pressure into account. The numerical computation has been performed for the electronic surface state energy levels, coupling constants and the average penetrating depths of the electronic surface state wave functions under the hydrostatic pressure for wurtzite GaN, AlN and InN, respectively. The results show that electron–Surface–Optical–phonon interaction lowers the electronic surface state energy levels. It is also found that the electronic surface state energy levels decrease with the hydrostatic pressure in wurtzite GaN and AlN. But for wurtzite InN, the case is contrary. It is shown that the hydrostatic pressure raised the influence of electron–phonon interaction on the electronic surface states obviously. The effect of electron–Surface–Optical–phonon interaction under the hydrostatic pressure on the electronic surface states cannot be neglected, in specially, for materials with strong electron–phonon coupling and wide band gap.     

Electronic Raman scattering and the electron–phonon interaction in YB6

Electronic Raman scattering in YB₆ and in its structural and electronic analog LaB₆ has been studied in the temperature range of 10–730 K. The experimental spectra have been compared to those calculated on the basis of ab initio band structures with renormalization owing to the electron–phonon interaction. Good agreement between the calculation and experiment for LaB₆ has been obtained throughout the entire temperature range. This allows the determination of the coupling constant λ _ep = 0.25. To satisfactorily describe the spectra of electronic light scattering in YB₆, it is necessary to introduce an additional electron relaxation channel. In this case, the estimate of the electron–phonon coupling constant λ _ep is no more than 0.4; for this reason, a high superconducting transition temperature cannot be explained only by the phonon mechanism.     

The influence of electron–phonon interaction on the OSL decay curve shape

The significance of the electron–phonon interaction for optically stimulated luminescence (OSL) process in quartz is demonstrated. OSL variation with temperature has been investigated for four samples of natural quartz. Changes of the OSL decay rate have been observed for all components of the OSL signal. The scale and tendency of these changes are comparable with outcomes of computer simulations carried out for the model composed of two deep electron traps, one shallow trap and one recombination centre, taking into account the electron–phonon interactions.     

Magnetoelectric effect induced by electron–electron interaction in three dimensional topological insulators

We compute the magnetoelectric response of an interacting topological insulator in three space dimensions with a short range interaction between electrons in different orbitals. We show that in the presence of interactions and inverted bands the chiral phase is gauged away and replaced by a topological angle (θ-term) which is determined by saddle point of the interacting action and the Fujikawa integration measure. The magnetoelectric response breaks time reversal symmetry which is restored at strong interactions. The effect is equivalent to the one in four dimensions without interaction; it can be observed by measuring the Faraday rotation under external stress.     

Bias-dependent bandwidth of the conductance in the presence of electron–phonon interaction

We study the electronic transport in the presence of electron–phonon interaction (EPI) for a molecular electronic device. Instead of mean field approximation (MFA), the related phonon correlation function is conducted with the Langreth theorem (LT). We present formal expressions for the bandwidth of the electron’s spectral function in the central region of the devices, such as quantum dot (QD), or single molecular transistor (SMT). Our results show that the out-tunneling rate depends on the energy, bias voltage and the phonon field. Besides, the predicted conductance map, behaving as a function of bias voltage and the gate voltage, gets blurred at the high bias voltage region. These EPI effects are consistent with the experimental observations in the EPI transport experiment.     

Spin–orbit scattering effect on electron–electron interactions in disordered metals

We have measured the low-temperature resistivities of a series of bulk crystalline disordered Ti_73−xAl₂₇Sn_x alloys (x≲5) as well as the sheet resistances of a number of thin ferromagnetic Ni films (≈120 Å thick) sandwiching an ultrathin Ag or Au (≲5 Å) layer. The level of impurities (concentration of Sn in the former case, and thickness of Ag or Au in the latter case) is progressively increased in order to enhance the spin–orbit scattering in a controllable manner. The influence of the spin–orbit scattering on the electron–electron interaction effects is studied from the temperature dependence of resistivities (sheet resistance) at low temperatures. We find that the electron–electron interaction contribution to the resistivities (sheet resistances) increases slightly with increasing spin–orbit scattering. Our observation is discussed in terms of the current theoretical concept for the electron–electron interactions in disordered metals.     

Theoretical examination of electron–phonon interaction and superconductivity in the hexagonal pnictide SrPtAs

We have calculated the structural and electronic properties of SrPtAs in a hexagonal KZnAs-type of crystal structure using a generalized gradient approximation of the density functional theory and the ab initio planewave pseudopotential method. These results are used to further calculate the phonon dispersions curves and the phonon density of states using a linear response approach based on the density functional theory. Using the electronic and phonon results, the electron–phonon coupling is computed to be of the intermediate strength of 0.78. In large part, this is contributed by the phonon modes dominated by the vibrations of Pt and As atoms. The superconducting critical temperature is estimated to be 1.9 K, in good accord with its experimental value of 2.4 K.     

Effects of electron–phonon interaction and impurity on optical properties of hexagonal-shaped quantum wires

We have investigated the influence of electron–phonon (e–p) interaction and hydrogenic donor impurity simultaneously on energy difference, binding energy, the linear, nonlinear and total refractive index changes and absorption coefficients of a hexagonal-shaped quantum wire. For this goal, we have used finite-element method (FEM), a compact density matrix approach and an iterative procedure. It is deduced that energy difference and binding energy decrease by changing the impurity position with and without e–p interaction. The dipole matrix elements have complex behaviours in the presence of impurity with and without e–p interaction. The refractive index changes and absorption coefficients increase and shift towards lower energies by enhancing a ₁ with central impurity. In the presence of central impurity, the absorption coefficients and refractive index changes enhance and shift toward higher energies when e–p interaction is considered.     

Electron–hole superlattices in GaAs/Al x Ga1− x As multiple quantum wells

A GaAs/Al _x Ga_{1? x} As semiconductor structure is proposed, which is predicted to superconduct at T _c?≈?2?K. Formation of an alternating sequence of electron- and hole-populated quantum wells (an electron–hole superlattice) in a modulation-doped GaAs/Al _x Ga_{1? x} As superlattice is considered. This superlattice may be analogous to the layered electronic structure of high-T _c superconductors. In the structures of interest, the mean spacing between nearest electron (or hole) wells is the same as the mean distance between the electrons (or holes) in any given well. This geometrical relationship mimics a prominent property of optimally doped high-T _c superconductors. Band bending by built-in electric fields from ionized donors and acceptors induces electron and heavy-hole bound states in alternate GaAs quantum wells. A proposed superlattice structure meeting this criterion for superconductivity is studied by self-consistent numerical simulation.     

Subband and excitonic binding of graded GaAs/Ga1–xAlxAs quantum wells under an electric field

The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The ver sensitive dependence of subband energies on the applied field is calculated using a model potential profile and exact electron and hole wavefunctions. Our calculations have revealed the dependence of the energy shifts of subbands, and excitonic binding on the field direction in the graded quantum well. This pemits control over tunnelling which could be desirable for some applications.