掺铍GaAs量子阱的光致荧光

测量了掺铍的,阱宽约为10nm的GaAs量子阱在4.2K的光致荧光。掺杂浓度分别为1×10¹⁷和5×10¹⁸cm^-3。测量结果表明:对于无规掺杂,局域在阱中心的铍的状态密度与导带电子从n=1量子能级到阱中心中性铍的跃迁概率的乘积大于对应于介面铍的乘积。另外,实验结果也表明:当掺杂浓度升高时,由于带隙收缩的影响,阱中心铍的电离能减小。     

新型MSM结构砷化镓半导体探测器的性能

研究一种新型双金属接触GaAs半导体探测器的性能,测量了²⁴¹Am 5.48MeVα粒子、⁵⁷Co 122keV的光子和⁹⁰Sr 2.27MeVβ粒子的最小电离粒子谱,比较了一个3×3mm²的GaAs芯片在经过¹³⁷Cs 662keV光子约1300rad辐照前后的电荷收集效率和能量分辨率.测量结果显示这种新型金属─半导体─金属(MSM)结构的半导体探测器不仅在室温下对各种粒子具有良好的探测能力,而且具有很好的抗辐照性能.     

MSM结构GaAs探测器的抗辐照性能

研究一种双金属接触的GaAs半导体探测器在14MeV中子辐照下的性能.测量了探测器经过10¹²n/cm²中子辐照剂量后的反向漏电流、电荷收集效率和最小电离粒子能谱,并且与⁶⁰Co 1.25MeV光子辐照的测量结果相比较.对中子辐照引起探测器时间性能变化和辐照损伤机制进行了探讨.并根据实验结果提出了这种双金属接触GaAs探测器灵敏层分布的一种假设,理论计算和实验数据相符合.     

PT-PEK-c电光聚合物薄膜的厚度和介电性质

研制了新的PT-PEK-c电光聚合物薄膜材料,用准波导耦合m线方法测量了PT-PEK-c电光聚合物薄膜的厚度,并测量了该聚合物薄膜在1×10²Hz到1×10⁷Hz频率范围内的室温介电常数.测量结果为:厚度d=2.328±0.315μm,在10KHz下,介电常数ε_r＝4023±0.063,介电损耗tanδ＝0.003.     

MOCVD生长GaAs高质量掺碳研究

利用低压金属有机化合物汽相淀积(LP-MOCVD)系统,通过调节生长参量和掺杂工艺,得到了晶格质量高、表面形貌好且空穴浓度从8×10¹⁷到4×10²¹可控的掺碳GaAs外延层,最后给出一应用实例-用重掺碳的GaAs材料做级联GaInP/GaAs/Ge太阳能电池的隧道结.     

钨酸钇钠晶体中Tm3+的光谱特性

测量了Tm³⁺:NaY(WO4)₂晶体的吸收光谱、发射光谱和激发光谱，利用J_O理论计算了钨酸钇钠晶体的强度参数：Ω₂=7.21304×10^-20cm²，Ω4=0.504766×10^-20cm²，Ω6=0.977784 ×10^-20cm²，以及Tm³⁺光学参数包括各能级的荧光寿命和荧光分支     

1.315μm附近CO2的高分辨率吸收光谱

 利用可调谐激光长程吸收光谱测量系统，记录到1.315μm附近高气压（80kPa和40kPa）CO₂的高分辨率吸收光谱，拟合分析获得谱线参数，结果与HITRAN 2k的数据基本一致。用程差法测量了绝对吸收，氧碘激光频率(7 603.138 5cm^-1)的总吸收截面为(0.23~0.29)×^-24cm²。仅计算谱线吸收的吸收截面为0.18×10^-24cm²。在1.315μm波段COCO₂存在连续吸收，吸收截面为(0.05~0.11)×10^-24cm²。还讨论了测量误差问题。     

高光洁度玻璃基片的表面散射和体散射测量

 提出了一种利用总积分散射（TIS）测量K9玻璃基片表面散射和体散射的实验方法。首先采用磁控溅射技术在基片表面沉积厚度为几十nm的金属Ag薄膜，然后将基片的表面和体区分开考虑，通过TIS测得了基片上下表面的均方根粗糙度， 进而求得基片的总散射和表面散射，最后计算得到了体散射。分别利用TIS和原子力显微镜（AFM）测量了3个样品上表面所镀Ag膜的均方根粗糙度，两种方法所得的均方根粗糙度的数值相差不明显，差值分别为0.08，0.11和0.09 nm, 表明TIS和AFM的测量结果相一致。利用该方法测得3块K9玻璃基片的总散射分别为6.06×10^-4，5.84×10^-4和6.48×10^-4，表面散射介于1.25×10^-4~1.56×10^-4之间，由此计算得到的体散射分别为3.10×10^-4，3.30×10^-4和3.61×10^-4。     

飞秒光梳和碘稳频532nm Nd:YAG激光频率的测量

报道了中国计量科学研究院研制的基于掺钛蓝宝石(Ti:Sapphire)锁模飞秒脉冲激光器的飞秒光学频率梳装置，并利用此装置测量了碘稳频532nm(¹²⁷I₂R(56)32-10) Nd∶YAG固体激光器的频率，结果为 563260223512991±20Hz,相对不确定度为3.6×10^-14.这一数值是直接溯源到铯原子微波频率基准的光学频率测量结果.     

用拉曼光谱测量离子注入引起的晶格应变

 对于10个周期的AlAs/GaAs超晶格和25个周期的GaAs/Ga0.92In0.08As超晶格,在室温下进行0.28 MeV的Zn＋注入,注入剂量为5×10¹³~5×10¹⁴ cm^-2。通过拉曼光谱测量,定量地分析了由于离子注入所引起的晶格内应变。实验结果表明：在所选用的注入剂量下,由于离子注入引起的应变小于体材料GaAs的最大非驰豫应变值0.038,说明该注入条件下,注入区的结晶态仍然保持得比较好。在较高注入剂量下应变达到饱和,说明缺陷的产生和复合达到了平衡,从而形成了均衡的应变场分布。     

冷中子三轴谱仪屏蔽体的蒙特卡罗模拟

冷中子三轴谱仪( CTAS ) 的屏蔽体对于保障工作人员安全、降低散射大厅本底及提高信噪比具有重要的意义。采用蒙特卡罗程序MCNP5 对谱仪各部分屏蔽体进行了计算,并结合Mcstas 程序确定了CTAS 入口处的中子源,大大提高了计算效率。经过模拟计算和优化表明:单色器后端使用厚350mm、密度4.6 g/cm3 的重混凝土,衔接屏蔽体使用厚300 mm、密度3.6 g/cm3的重混凝土,生物屏蔽采用厚150 mm、密度3.6 g/cm3 的重混凝土可保证屏蔽体外表面的剂量率满足散射大厅的剂量要求。The shielding of Cold neutron Triple-Axis Spectrometer( CTAS ) is important for radiation safety of workers, and reduce the background of scattering hall as well as enhancing the ratio of signal-to-noise. In this study,Monte-Carlo simulation was performed to conduct the calculation on the shielding of CTAS. To increase the calculation efficiency, neutron source was obtained by using Mcstas code. The results indicate that, in the case of heavy concrete ( density 4.6 g/cm3 ) with thickness of 350 mm for the shielding behind the monochromater, and heavy concrete ( density 3.6 g/cm3 ) with thickness of 300 mm for the other monochromater shielding, as well as the heavy concrete ( density 3.6 g/cm3 ) with thickness of 150 mm for biological shielding, the dose rate outside shielding may meet the requirement of national standard of China.     

高灵敏GaAs探测器及应用

在ICF实验研究中,我们应用新研制的经快中子辐照处理过的GaAs晶体材料做成的光导电探测器首次实验观察到各种结构的内爆靶发射的硬X光时间波形信号以及硬X光的空间角分布。这种探测器对X光有很高的灵敏度(约10~(-18)C/keV),有快的响应(约100ps),具有抗干扰能力强,灵敏度高体积小,用于ICF实验的X光诊断有独特优点。     

A capture-gated fast neutron detection method

To address the problem of the shortage of neutron detectors used in radiation portal monitors(RPMs),caused by the ~3He supply crisis, research on a cadmium-based capture-gated fast neutron detector is presented in this paper. The detector is composed of many 1 cm × 1 cm × 20 cm plastic scintillator cuboids covered by 0.1 mm thick film of cadmium. The detector uses cadmium to absorb thermal neutrons and produce capture γ-rays to indicate the detection of neutrons, and uses plastic scintillator to moderate neutrons and register γ-rays. This design removes the volume competing relationship in traditional ~3He counter-based fast neutron detectors, which hinders enhancement of the neutron detection efficiency. Detection efficiency of 21.66% ± 1.22% has been achieved with a 40.4 cm × 40.4cm × 20 cm overall detector volume. This detector can measure both neutrons and γ-rays simultaneously. A small detector(20.2 cm × 20.2 cm × 20 cm) demonstrated a 3.3 % false alarm rate for a ~(252)Cf source with a neutron yield of 1841 n/s from 50 cm away within 15 s measurement time. It also demonstrated a very low(0.06%) false alarm rate for a 3.21 × 10~5 Bq ~(137)Cs source. This detector offers a potential single-detector replacement for both neutron and the γ-ray detectors in RPM systems.     

Ultrafast response of multi-energy proton-bombarded GaAs photoconductors

We have investigated the ultrafast optical and optoelectronic characteristics of multi-energy proton-bombarded GaAs (GaAs:H⁺) material and devices in some detail. Photo-excited carrier lifetimes of GaAs:H⁺ were observed to be as low as 350 ± 50 fs. Photoconductive switches (PCS) fabricated on GaAs:H⁺ were found to exhibit lower dark currents (15 nA at a bias of 10 V) and higher breakdown voltage (> 100 kV/cm) than PCS's fabricated on semi-insulating (S.I.) GaAs. The temporal response of the GaAs:H⁺ PCS was about 2 ps at full-wave half minimum. Optically excited terahertz (THz) radiation from GaAs:H⁺ was reported for the first time to our knowledge. The temporal response and spectral bandwidth of the emitted THz radiation were 0.7 ps and 1.25 THz, respectively. The field strength of the THz signal was about 20 mV/cm. From the THz data, we are able to deduce that the effective carrier mobility of GaAs:H⁺ was less than 1 cm²/V-sec.     

高灵敏度的快中子照相系统

快中子照相系统由闪烁光纤阵列和科学级可见光CCD等元件组成. 14 MeVD-T聚变中子在穿透样品后进入50 mm×50 mm闪烁光纤阵列，中子辐射转换为中心波长496 nm的绿光. 光纤阵列长100 mm，光纤截面500 μm×500 μm，100×100根闪烁体光纤组成阵列. 阵列对14 MeV中子探测效率经估算可达21.4%. CCD与光纤阵列之间采用反射镜和透镜耦合方式，使CCD避开中子源直接辐照. 综合考虑光纤尺寸、CCD记录噪声及中子源与受照样品几何关系等因素，理论上系统可获得整体分辨率1.5 mm的中子图像. 在K400直流加速器中子源上进行了初步实验，获得了中子图像.     

Development of a compact on-beam SEOP neutron spin filter

We have designed and demonstrated a prototype on-beam spin-exchange optical pumping (SEOP) ³He neutron spin filter (NSF). It is designed as the incident neutron polarizer for spallation neutron sources, where the installation space is limited due to thick radiation shielding. The size of the NSF is roughly 50 cm×50 cm×25 cm including the diode-laser optics with a frequency narrowing external cavity, and a cylindrical ³He cell as large as a diameter of 5 cm and a length of 10 cm can fit. A neutron beam test was performed at the NOP beamline of JRR-3 to see the performance of the NSF.     

重离子加速器示范装置被动式束流配送系统次级中子特征的蒙特卡罗研究

在碳离子放射治疗中,碳离子束在剂量配送过程中会与束流输运线相互作用,形成以中子辐射为主的外辐射场.由于中子是高LET射线,具有较高的相对生物学效应,减少碳离子放疗中产生的次级中子有助于降低放疗后正常组织并发症几率及二次肿瘤风险.利用蒙特卡罗方法对保守情况(能量为400 MeV/u,多叶光栅完全闭合)下碳离子治疗被动式束...     

Ultrafast opto-terahertz photonic crystal modulator

We present an agile optically controlled switch or modulator of terahertz (THz) radiation. The element is based on a one-dimensional photonic crystal with a GaAs wafer inserted in the middle as a defect layer. The THz electric field is enhanced in the photonic structure at the surfaces of the GaAs wafer. Excitation of the front GaAs surface by ultrashort 810 nm laser pulses then leads to an efficient modulation of the THz beam even at low photocarrier concentrations (approximately 10(16) cm(-3)). The response time of the element to pulsed photoexcitation is about 130 ps.     

GaAsN/GaAs量子阱在1 MeV电子束辐照下的退化规律

为研究GaAsN/GaAs量子阱在电子束辐照下的退化规律与机制,对GaAsN/GaAs量子阱进行了不同注量(1×1015,1×1016 e/cm2)1 MeV电子束辐照和辐照后不同温度退火(650,750,850℃)试验,并结合Mulassis仿真和GaAs能带模型图对其分析讨论。结果表明,随着电子注量的增加,GaAsN/GaAs量子阱光学性能急剧降低,注量为1×1015 e/cm2和1×1016 e/cm2的电子束辐照后,GaAsN/GaAs量子阱PL强度分别衰减为初始值的85%和29%。GaAsN/GaAs量子阱电子辐照后650℃退火5 min,样品PL强度恢复到初始值,材料带隙没有发生变化。GaAsN/GaAs量子阱辐照后750℃和850℃各退火5 min后,样品PL强度随退火温度的升高不断减小,同时N原子外扩散使得样品带隙发生约4 nm蓝移。退火温度升高没有造成带隙更大的蓝移,这是由于进一步的温度升高产生了新的N—As间隙缺陷,抑制了N原子外扩散,同时导致GaAsN/GaAs量子阱光学性能退化。     

浦项中子装置上209Bi中子全截面测量(英文)

在浦项中子装置(PNF) 的100 MeV电子直线加速器上利用透射法和飞行时间法测量了209Bi 的0.1~100 eV的中子全截面。文中对于实验装置特点、用吸收片法拟合本底、拟合中子飞行距离和时间零点的处理过程做了较为详细的描述。测量结果与以前发表的实验数据以及评价数据ENDF/B-VII.1 做了比较,比较结果符合得较好。