有机层厚度变化的有机电致发光器件与微腔器件光谱分析

设计中心波长为520nm,改变有机层厚度,即空穴传输层NPB和发光层Alq3的厚度,分别由10nm逐渐增加至100nm,器件的总体厚度也随着改变,分别计算模拟出有机电致发光器件(OLED)和微腔有机电致发光器件(MOLED)的电致发光谱(EL),并对光谱的积分强度、峰值强度、半峰全宽、峰值位置的三维分布图进行比较分析。综合考虑光谱的峰值位置(中心波长)、最大的峰值强度和积分强度(与亮度、效率相关)、最小半峰全宽(色纯度高)进行合理的设计,可以找到最佳厚度。发现:NPB和Alq3的厚度分别为70和62nm时,器件性能最佳,并且微腔器件的结果尤为明显。结果表明,通过模拟计算,可以深入探索MOLED和OLED发光特性,设计出合理的器件结构。     

微腔有机电致发光器件的谐振腔反射镜性能

根据微腔原理运用传输矩阵法对构成微腔有机电致发光器件(MOLED)谐振腔的两个反射镜进行模拟计算并比较,可观察到:随金属反射镜的反射率增大,微腔器件的电致发光(PL)谱的半峰全宽(FWHM)逐渐窄化;峰值逐渐蓝移至设计的谐振峰值520nm处;峰值强度和光谱积分强度逐渐增强。结果表明:金属反射镜反射率越大越好。随DBR反射镜的周期数从1增加到9,EL的峰值均为520nm,半峰全宽逐渐窄化,积分强度逐渐减弱;峰值强度由弱增强再减弱,4个周期时峰值强度最大,所以设计微腔器件时,DBR的周期是一项很重要的参数。DBR反射率太大不利于出光,太小微腔效应小。需要根据制作目的和需要进行合理选择。     

具有微腔结构的有机电致发光器件

具有微腔结构的有机电致发光器件＊刘祖刚唐春玖赵伟明张志林蒋雪茵许少鸿（上海大学材料学院，上海２０１８００）近来在有机电致发光器件中发现了微共振腔效应［１～３］。其中自发射的微腔效应如发射的光谱窄化、发射强度增加和发射的角度依赖关系已在许多有机电致发光...     

耦合微腔结构的有机电致发光器件

研究了耦合微腔结构的有机发光器件的光学和电致发光性能。通过将被动腔作为底部反射镜的方法,简化了耦合微腔的光学和发光性能的模拟,所得到的结果与实验符合得较好。在相同电流密度下与同样结构的普通OLED相比,耦合腔OLED的光谱强度在502 nm处增强了3.6倍,在550 nm处增强了5.6倍,光谱积分强度增加了0.5倍。普通OLED的最大电流效率和亮度是4.2 cd/A 和13 600 cd/m²。而耦合腔OLED则为7.0 cd/A 和 22 660 cd/m²。这种结构的器件出射光更集中于腔轴方向,有利于设计开发较高效率的有机激光器件。     

不同微腔结构有机电致发光器件的电致发光光谱模拟

采用传输矩阵法对有机电致发光器件(OLED)、微腔有机电致发光器件(MOLED)和耦合微腔有机电致发光器件(CMC)的电致发光光谱(EL)进行了模拟计算。OLED、MOLED和CMC的结构分别为glass/ITO(134 nm)/NPB(74 nm)/Alq₃(62 nm)/Al、glass/DBR/ITO(134 nm)/NPB(74 nm)/Alq₃(62 nm)/Al和glass/DBR₁/filler/DBR₂/ITO(134 nm)/NPB(74 nm)/Alq₃(62 nm)/Al。通过模拟计算发现:OLED光谱呈宽带发射,主峰峰值位于561 nm,肩峰峰值位于495 nm;MOLED光谱呈单峰窄带发射,峰值位于534 nm;CMC光谱呈双峰窄带发射,峰值分别位于520 nm和556 nm。MOLED光谱的色纯度最高;OLED与MOLED的光谱积分面积基本相同;CMC的光谱积分面积是OLED或MOLED的1.1倍,发光效率最高。结果表明,采用双耦合微腔结构可有效提高...     

有机薄膜电致发光器件的光学微腔效应

制备了以铝掺杂氧化锌（ＡＺＯ）透明导电膜为阳极的有机薄膜电致发光微腔器件，研究了垂直的光学法布里－珀罗微共振腔对有机器件的自发发射的微腔效应，发出了光谱窄化、发光强度增加及发射的角度依赖关系等现象。具有微腔结构的器件发射谱将高宽只有１４display status     

微腔有机电致发光器件角度依赖性的模拟与实验验证

为了分析微腔有机电致发光器件(MOLED)发光的角度依赖性,根据微腔计算公式,采用传输矩阵法进行了模拟计算,并进行了实验验证。所设计器件的结构为Glass/DBR/ITO(58 nm)/NPB(46 nm)/DPVBi(20 nm)/Alq₃(56 nm)/LiF(1 nm )/Al(150 nm)。由实验得到的电致发光(EL)谱可以观察到:随着探测角度的加大,发光峰蓝移、强度减小。与模拟得出的不同观测角度下的反射谱进行比较,发现透射峰值与EL峰值相对应。模拟分析发现,这是由于观测角不同,微腔两个反射镜的S和P偏振的反射率及反射相移不同,同时腔内光学厚度发生变化,即微腔长度变化共同作用所导致。     

红色磷光微腔有机电致发光器件的发光性能

制备了结构为G/DBR/ITO/Mo O3(1 nm)/Tc Ta(55 nm)/CBP∶Ir(piq)2acac(44 nm,6%)/TPBI(55nm)/Li F(1 nm)/Al(80 nm)的红色磷光微腔有机电致发光器件(MOLED),同时制作了无腔对比器件OLED,研究微腔结构对磷光器件发光性能的影响。研究发现,OLED的电致发光(EL)峰值为626 nm,半高全宽(FWHM)为92 nm;MOLED的发光峰值为628 nm,FWHM为42 nm,窄化了1/2。MOLED的最大亮度、最大电流效率、最大外量子效率(EQE)分别为121 000 cd/m2、27.8 cd/A和28.4%,OLED的最大亮度、最大电流效率、最大EQE分别为54 500 cd/m2、13.1 cd/A和16.6%。结果表明,微腔器件的发光性能与无腔器件相比得到了较大幅度的提升。     

激子位置不同微腔有机电致发光器件性能模拟

微腔有机电致发光器件(MOLED)的发光特性直接与微腔的结构相关,可以根据微腔器件的相关计算公式,运用传输矩阵法对MOLED进行模拟设计。本文对微腔总长度L=λ/2(λ:中心波长)不变情况下,激子在微腔内不同位置复合发光的电致发光(EL)光谱性能进行模拟并比较。结果表明:发光谱的峰值都在所设计的中心波长520nm处,半峰全宽(FWHM)都是17nm,激子处在微腔的中心区域时,峰值强度和积分强度都是最大,这是因为激子此时位于腔内电场的最大值处,偏离此处的两侧逐渐变小。以上结果表明:要制作出高效率的MOLED,必须使激子处于微腔内的最佳位置处。     

微腔有机电致发光器件的角度依赖性

设计并制作了两个器件,一个是微腔有机电致发光器件(MOLED):G/DBR/ITO/NPB(46 nm)/DPVBi(20 nm)/Alq₃(56 nm)/LiF(1 nm)/Al(150 nm);一个是无腔器件(OLED):G/ITO/NPB(46 nm)/DPVBi(20 nm)/Alq₃(56 nm)/LiF(1 nm)/Al(150 nm)。测试并分析了器件性能。OLED在电流密度30 mA/cm²时的电致发光(EL)光谱随观测角度由0°~70°都是一宽谱带,是发光层DPVBi的特征发光谱,峰值都在452 nm处,半峰全宽均为70 nm,色坐标均为(x=0.18,y=0.19),无腔器件没有角度依赖性。相同电流密度下,微腔器件的EL谱随观测角度由0°~70°,发光峰值蓝移,由472 nm逐渐移至428 nm;峰值相对强度渐弱,由0.32变至0.02;半峰全宽由14 nm增加至120 nm;色坐标由(x=0.14,y=0.10)变至(x=0.19,y=0.25),颜色由紫蓝变成蓝白到接近白色。微腔器件具有明显的角度依赖性。     

Pure red emission of dye-doped organic molecules from microcavity organic light emitting diode

Organic red emitting diode was fabricated by using 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[ij]quinolizin-8-yl)vinyl]-4H-pyran (DCM)-doped tri-(8-quinolitolato) aluminum (Alq₃) as emitter with the structure of G/ITO/NPB(25 nm)/DCM:Alq₃(55 nm)/Alq₃(20 nm)/LiF (1.2 nm)/Al(84 nm), (glass/indium–tin-oxide/4,4-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl, G/ITO/NPB), the wavelength of the maximal emission of which is 615 nm. By introducing cavity to Organic light emitting diode (OLED), we got pure red emitting diode with wavelength of the maximal emission of 621 nm and full-width at half-maximum (FWHM) of 27 nm. As far as we know, it is the best result in the dye-doped organic red emitting diode. We also made a device of G/ITO/NPB(25 nm)/DCM:Alq₃(29 nm)/DCM:PBD(26 nm)/Alq₃(20 nm)/LiF(1.2 nm)/Al(84 nm), in order to compare the performance of Alq₃ with that of 2-(4-biphenylyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD) as host material. It was found that the performance of device A is better than that of C both in brightness and color purity,as well as in EL efficiency.     

用于POF的高性能共振腔发光二极管

提出用AlGaAs材料为n型下DBR,AlGaInP材料为p型上DBR,GaInP/AlGaInP多量子阱为有源区来制备650nm波长的共振腔发光二极管（RCLED）.用传输矩阵法对器件的结构进行了理论设计,并制备了RCLED和普通LED两种结构.测试结果表明,RCLED有更高的发光效率,是普通LED的近1.3倍,当注入电流从3mA增加到30mA时,RCLED的峰值波长只变化了1nm,而普通LED的波长则变化了7nm,且RCLED的光谱半宽窄,远场发散角小. 关键词： 发光二极管 共振腔 金属有机物化学气相淀积     

带介质分布式Bragg反射镜结构高性能共振腔发光二极管的研究

采用等离子体增强化学气相沉积高低频交替生长法生长了SiO₂/Si₃N₄透明介质分布式Bragg反射镜(DDBR), 提出了对DDBR采用干、湿法并用的腐蚀方法. 采用传输矩阵法理论分析了DDBR, 得出了为满足出光增益要求的反射率和DDBR结构. 使用光致发光(PL)谱仪测量分析了DDBR反射谱和光致发光谱, 获得了使光致发光谱辐射增强的DDBR结构, 在整个光致发光谱380–780 nm波段, 整体辐射增强1.058倍, 在谐振波长处辐射增强1.5倍, 半峰全宽值由23 nm变窄为10.5 nm, 获得了很好的光谱纯度. 利用最优DDBR结构制成了高性能共振腔发光二极管器件, 与普通结构相比, 实现了低开启电压1.78 V; 在20 mA注入电流下, 轴向光强提高了20%, 光功率和光效分别提高了27.7%和26.8%, 光功率衰减缓慢; 在0–100 mA注入电流下, 没有明显的下降趋势, 表现出了良好的温度稳定性. 关键词： 发光二极管 共振腔 介质分布式布拉格反射镜 辐射增强     

Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors

Light emitting pn-diodes were fabricated on a 5.8 μm thick n-type Si device layer of a silicon-on-insulator (SOI) wafer using standard silicon technology and boron implantation. The thickness of the Si device layer was reduced to 1.3 μm, corresponding to a 4λ-cavity for λ=1150 nm light. Electroluminescence spectra of these low Q-factor microcavities are presented. Addition of Si/SiO₂ Bragg reflectors on the top and bottom of the device (3.5 and 5.5 pairs, respectively) is predicted to lead to spectral emission enhancement by ∼270.     

3,4,9,10-Perylenetetracarboxylicdiimide as an interlayer for ultraviolet organic light emitting diodes

Ultraviolet organic light emitting diodes with 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI) interlayer have been achieved. The emission spectrum and intensity were strongly dependent on the thickness of PTCDI interlayer, in spite of the fact that PTCDI has neither much lower HOMO nor much higher LUMO level, which is considered necessary for efficient charge blocking layers. The influence of PTCDI layer was investigated in three different device configurations and obtained results are discussed. For optimal device configuration, OLED with emission centered at 370 nm and turn-on voltage of 4.5 V is obtained.     

微腔面发射器件外量子效率研究

结合微腔面发射器件辐射/发光亮度的空间分布以及相对光谱功率分布给出了器件外量子效率的计算模型. 该模型可以计算工作于不同波段的微腔面发射器件的外量子效率,如红外波段的垂直腔面发射激光器,可见光波段的微腔有机发光二极管和谐振腔发光二极管以及太赫兹波段的平面微腔结构等. 制备了结构为玻璃/DBR /ITO /NPB /Alq ∶C545T/Alq/LiF/Al的微腔有机电致发光器件,测试其不同观察角度下器件的发光亮度以及发光光谱. 当电流密度和发光亮度分别为14 A/m²和100 cd/ 关键词： 外量子效率 平面微腔器件 辐射/发光亮度空间分布     

Effect of SiO2/Si3N4 dielectric distributed Bragg reflectors (DDBRs) for Alq3/NPB thin-film resonant cavity organic light emitting diodes

In this article, we report on the effect of SiO₂/Si₃N₄ dielectric distributed Bragg reflectors (DDBRs) for Alq₃/NPB thin-film resonant cavity organic light emitting diode (RCOLED) in increasing the light output intensity and reducing the linewidth of spontaneous emission spectrum. The optimum DDBR number is found as 3 pairs. The device performance will be bad by further increasing or decreasing the number of DDBR. As compared to the conventional Alq₃/NPB thin-film organic light emitting diode (OLED), the Alq₃/NPB thin-film RCOLED with 3-pair DDBRs has the superior electrical and optical characteristics including a forward voltage of 6 V, a current efficiency of 3.4 cd/A, a luminance of 2715 cd/m² under the injection current density of 1000 A/m², and a full width at half maximum (FWHM) of 12 nm for emission spectrum over the 5-9 V bias range. These results represent that the Alq₃/NPB thin-film OLED with DDBRs shows a potential as the light source for plastic optical fiber (POF) communication system.     

Design and electro-optical characterization of Si-based resonant cavity light emitting devices at 850 nm

We report on the fabrication and characterization of Si/SiO₂ Fabry-Perot microcavities. These structures are used to enhance the external quantum efficiency along the cavity axis and the spectral purity of emission from silicon rich oxide films that are used as active media to fabricate a Si based RCLED (resonant cavity light emitting devices). A new structure to electrically pump the active media in the resonant cavity has been designed. These structures are fabricated by chemical vapour deposition on a silicon substrate. The microcavities are tuned at 850 nm and present a quality factor ranging from 17 to 150 depending on the number of pairs constituting the dielectric mirrors. An enhancement of the electro and photoluminescence (PL) signal of 20 times is achieved for the selected emission wavelength. These cavities are characterized by TEM analysis to evaluate film uniformity, thicknesses and the densification after annealing processes for temperature ranging from 800 to 1100 °C. The electrical properties of the active media are analyzed. The electroluminescence spectral features are compared with PL spectra correlated with the quality factor of the cavities. The photometric diagram shows also a high directionality of the emitted light within a 30° cone from the sample normal.     

ITO/有机半导体/金属结构OLED器件的数值模拟

基于稳态的小信号漂移扩散方程,建立了有电极的单层有机电致发光(OLED)器件的数值模型,编制的MATLAB程序,首先模拟了文献中的OLED器件电极附近正电荷层(面电荷)对器件J-V的影响,得到了和文献中一致的结果. 模拟了ITO/PPV/Ca结构的OLED器件,模拟时,考虑了OLED阳极附近存在正体电荷,得到的J-V曲线和文献中的实验结果一致,体电荷产生了势垒,影响了电流曲线. 关键词： 有机电致发光 数值模拟 漂移扩散模型     

Improved outcoupling of light in organic light emitting devices, utilizing a holographic DFB-structure

In this work organic light emitting devices (OLEDs) were fabricated implementing gratings, in order to extract waveguided electroluminescence (EL). The gratings were recorded by exposing thin films of the molecular azo glass N, N′-bis (4-phenyl)-N, N′-bis [(4-phenylazo)-phenyl] benzidine (AZOPD) to holographic light patterns. The photopatterned AZOPD serves as hole transport material for devices with aluminum-tris(8-hydroxyquinoline) doped with 1% of 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (Alq₃:DCM) as emissive/electron transport layer. The corrugated devices showed enhanced emission in the forward direction. The emitted light is polarized preferably parallel to the grating lines. In addition, we have found a doubling in the total luminance with respect to the unstructured device.