群表示论的物理方法(Ⅴ)——SU3?SO3和SU4?SU2×SU2分类基

本文给出了核物理中常用的SU₃?SO₃(f=1—6)和SU₄?SU₂×SU₂波函数在Gelfand表象中的展开系数。 关键词：     

Si中深能级T2对称波函数理论

木文在文献[5,6]所发展的在位缺陷势格林函数方法基础上,进一步讨论Si中短程缺陷势引入的T₂对称深能级波函数性质。第一次给出了Si禁带中部很宽能量范围之内T_2对称波函数的完整数据。波函数在缺陷最近邻四个格点的占据几率P₁有一高达50％以上峰值。该部分相当于四个最近邻格点指向缺陷的杂化轨道准悬键的T₂组合。第0,1,2三个格点壳层波函数占据几率之和约为70％。波函数其余部分较平缓地分布在一相当大空间。波函数的以上特征与禁带中部能量位置关系不灵敏。但在靠近导带E_c和满带E_v的浅能量区,以上P₁峰趋于消失,整个波函数在空间的分布趋于平坦。Si空位在禁带引入一个T₂对称深能级,位于E_v以上0.51eV处。 关键词：     

3c-SiC中深杂质能级的A_1,T_2对称波函数

本文采用文献[1—4]所发展的在位缺陷势格林函数方法,计算了3c-SiC中深能级的A_1,T_2对称波函数。第一次给出了波函数随杂质态能量E的变化趋势,和电子占据距缺陷中心最近邻的几个壳层的几率。并给出数量级与实验相符的3c-SiC:B的超精细结构常数的理论值。     

纳米X1-Y2SiO5: Eu3+发光光谱的理论研究

从晶体结构参数和Eu³⁺离子等的物性参数出发，用Faucher的静电模型，计及远程环境影响，且用自洽求解方法确定配位离子的诱导电偶极矩，系统地计算了纳米晶X₁-Y₂SiO₅: Eu³⁺的晶场参数，并延伸此模型用于跃迁强度计算．给出了在C₁对称下与实验相当一致的光谱，且得到可用于其他性质的计算的各态波函数 关键词：     

Dy3Al5O12磁热性质研究

用量子理论计算了Dy₃Al₅O₁₂的晶场能谱、Zeeman劈裂能级和波函数. 在外磁场H_e为0<H_e<9 T, 温度为3<T<42 K 范围内, 计算了该晶体的磁矩、磁熵变, 计算结果与相关实验数据吻合较好. 该计算结果表明, Dy₃Al₅O₁₂内磁性离子间的交换作用非常微弱, 可以忽略. 从理论上给出了绝热退磁过程中温度变化ΔT与T的关系, 并与Gd₃Ga₅O₁₂晶体进行了比较, 发现不同外磁场下, Dy₃Al₅O₁₂和Gd₃Ga₅O₁₂的低温制冷性能在不同温区有差别. 在进行低温(T<10 K)制冷时, 若外磁场较低, 选择Dy₃Al₅O₁₂作为磁制冷材料较好; 若外磁场较高, 选择Gd₃Ga₅O₁₂作为磁制冷材料较好.     

164Er96与166Er98核推转壳模型波函数的K结构新探

在一组新的表象空间中,对轴对称变形核¹⁶⁴Er₉₆与¹⁶⁶Er₉₈的推转壳模型(CSM)波函数的K结构进行了分析,随转动角频率ω增大,CSM波函数不再具有单一的K结构,原子核逐渐偏离轴对称,计算表明,¹⁶⁴Er₉₆与¹⁶⁶Er₉₈的晕带K结构极其相似,但第一激发带的K结构却有较大不同。 关键词：     

微观相场法模拟Ni75Al5.3V19.7 中L12和D022结构反位缺陷的演化

运用微观相场法研究Ni₇₅Al_5.3V_19.7合金沉淀过程中L1₂结构和D0₂₂结构反位缺陷发现：在沉淀初期,L1₂结构反位缺陷Al_Ni,V_Ni,Ni_Al,D0₂₂结构反位缺陷V_Ni,Al_Ni关键词： 微观相场 反位缺陷 L1₂结构')" href="#">L1₂结构 D0₂₂结构')" href="#">D0₂₂结构     

Li2K(IO3)3与Li2NH4(IO3)3的晶体结构

本文用X射线粉末法测定了Li₂K(IO₃)₃与Li₂NH₄(IO₃)₃的晶体结构和原子参数。发现Li₃K(IO₃)₃,Li₂NH₄(IO₃)₃与Li₂Rb(IO₃)₃同晶型,属单斜晶系,空间群为P2₁/α,每个单胞含有四个化合式量。室温的点阵常数分别为α=11.198?,b=11.046?,c=8.254?,β=111.53°,及α=11.327?,b=11.078?,c=8.341?,β=111.87°。讨论了二元化合物的形成与离子半径的关系。 关键词：     

D+CD4→CD3+D2反应的四维量子散射计算

运用约化维数量子动力学理论，利用含时波包法，对反应D+CD₄→CD_{3+D2进行了四维量子散射计算.将反应多原子CD4看作双原子D—CD 3，反应D+CD4→CD3+D2看作单原子-双原 子反应，把体系的反应简化为四维散射问题. 波函数的传播采用分裂算符法，为避免格点边界处含时波函数的边界反射，采用了光学吸收 势法，在格点边界处引入光学势，消除边界反射.根据CD4分子的C3v对称性， 选取了Jordan和Gilbert提出的半经验势能面.计算结果表明，反应概率随平动能的变化图像 ，呈现出显著的量子共振特性，这是很多提取反应的共同特征.而不同振动态下的反应概率 随平动能的变化表明，随振动量子数的增大，反应概率有明显提高，且反应阈能明显降低， 这说明反应分子的振动能对分子的碰撞反应有重要贡献.而对基态和第一振动激发态时散射 截面的计算，也证明了这一结论.同时，还分别通过计算量子数j，k，m对反应概率的影响， 对该反应的空间取向效应进行了研究，并与H+CH4→CH3+H2反应进行了比较. 关键词： 含时波包 量子散射 反应概率}     

纳米Fe3 O4 颗粒的正电子湮没谱学研究

测量了磁性纳米Fe₃O₄颗粒的X射线衍射谱(XRD)、正电子湮没寿命谱(PALS)和符合多普勒展宽谱(CDBS),研究了不同压力和退火温度对磁性纳米Fe₃O₄颗粒物相、电子结构、缺陷及电子动量分布等的影响. XRD,PALS,CDBS测量结果表明:纳米Fe₃O₄颗粒的缺陷浓度随压力的增加而增大,但物相和缺陷类型并未发生变化;磁性纳米Fe₃O_{4< 关键词： 正电子 3}O₄')" href="#">Fe₃O₄ 寿命谱 多普勒展宽谱     

Electrical and optical properties of single crystal In2Te3 and Ga2Te3

Electrical conductivity and thermopower measurements are reported for the defect semiconductors p-In₂Te₃ and n-Ga₂Te₃. The hole mobility μ_p in the former varied as Tⁿwheren=+5.98 forT<350 K and n=-4.13 forT>350 K showing a maximum of 210 cm²V^-1 sec^-1 at 350 K. Electron mobility in n-Ga₂Te₃ also went through a maximum at 320 K. The optical band-gaps for both were found to be direct, with values of 1.01 and 1.08 eV for In₂Te₃ and Ga₂Te₃ respectively at 300 K. Pronounced effects of annealing on TEP and optical absorption gave evidence of defect ordering at low temperatures followed by defect creation at T>350 K.     

The CuPL defect and the Cus1Cui3 complex

The Cu_PL defect is characterized by intense photoluminescence (PL) emission with a 1014 meV zero-phonon line and has since long been called the ‘copper-pair’ defect. However, recent PL studies in isotopically pure ²⁸Si samples show clear evidence for four Cu atoms in this defect. This defect is one of a family of complexes that contain four (sometimes five) metal impurities. No complex containing two or three metal impurities (at least one of which is a transition metal) has been reported. We have performed systematic calculations of a priori possible Cu₄ complexes, including the Cu_s1Cu_i3 complex proposed by Shirai et al. [18]. This complex has the lowest formation energy of all the Cu₄ defects. We have studied its properties using first-principle theory. In addition to the structures, binding energies, and vibrational spectra, we studied the formation pathway in an attempt to figure out why smaller (or larger) complexes do not form. We find that Cu_s1Cu_in with n=0, 1 or 2 continue to trap Cu_i⁺ if the Fermi level is midgap, and that the process stops when n=3. © 2011 Elsevier Science. All rights reserved     

Luminescence studies on ZnO-P2O5 glasses doped with Gd2O3:Eu nanoparticles and Eu2O3

Zinc phosphate glasses doped with Gd₂O₃:Eu nanoparticles and Eu₂O₃ were prepared by conventional melt-quench method and characterized for their luminescence properties. Binary ZnO-P₂O₅ glass is characterized by an intrinsic defect centre emission around 324 nm. Strong energy transfer from these defect centres to Eu³⁺ ions has been observed when Eu₂O₃ is incorporated in ZnO-P₂O₅ glasses. Lack of energy transfer from these defect centres to Eu³⁺ in Gd₂O₃:Eu nanoparticles doped ZnO-P₂O₅ glass has been attributed to effective shielding of Eu³⁺ ions from the luminescence centre by Gd-O-P type of linkages, leading to an increased distance between the luminescent centre and Eu³⁺ ions. Both doped and undoped glasses have the same glass transition temperature, suggesting that the phosphate network is not significantly affected by the Gd₂O₃:Eu nanoparticles or Eu₂O₃ incorporation.     

Optical properties of (ZnO)0.5(P2O5)0.5 glasses doped with Gd2O3:Eu nanoparticles and Eu2O3

Binary (ZnO)_0.5(P₂O₅)_0.5 glasses doped with Eu₂O₃ and nanoparticles of Gd₂O₃:Eu were prepared by conventional melt-quench method and their luminescence properties were compared. Undoped (ZnO)_0.5(P₂O₅)_0.5 glass is characterized by a luminescent defect centre (similar to L-centre present in Na₂O-SiO₂ glasses) with emission around 324 nm and having an excited state lifetime of 18 ns. Such defect centres can transfer the energy to Eu³⁺ ions leading to improved Eu³⁺ luminescence from such glasses. Based on the decay curves corresponding to the ⁵D₀ level of Eu³⁺ ions in both Gd₂O₃:Eu nanoparticles incorporated as well as Eu₂O₃ incorporated glasses, a significant clustering of Eu³⁺ ions taking place with the latter sample is confirmed. From the lifetime studies of the excited state of L-centre emission from (ZnO)_0.5(P₂O₅)_0.5 glass doped with Gd₂O₃:Eu nanoparticles, it is established that there exists weak energy transfer from L-centres to Eu³⁺ ions. Poor energy transfer from the defect centres to Eu³⁺ ions in Gd₂O₃:Eu nanoparticles doped (ZnO)_0.5(P₂O₅)_0.5 glass has been attributed to effective shielding of Eu³⁺ ions from the luminescence centre by Gd-O-P type of linkages, leading to an increased distance between luminescent centre and Eu³⁺ ions.     

Electrical conductivity of the system Y2O3CeO2

The electrical conductivity of the system Y₂O₃CeO₂ was measured in the temperature range 500–1100°C and P_o2 range 10^–7?10^?1 atm. Possible defect models were suggested on the basis of conductivity data, which were investigated as a function of temperature and of P_o2. The observed activation energies were 0.40 eV and 1.79 eV in the low- and high-temperature regions, respectively. The observed conductivity dependences on P_o2 were in the temperature range 500–750°C and at temperatures from 750–1100°C. It is suggested that the system Y₂O₃CeO₂ shows a mixed ionic plus hole conduction due to an O^″_i defect and an electronic hole conduction due to a V^'''_Y defect in the low- and high-temperature regions, respectively.     

Intrinsic polyatomic defects in Sc2(WO4)3

The intrinsic formation of polyatomic defects in Sc₂(WO₄)₃-type structures is studied by Mott Littleton calculations and Molecular Dynamics simulations. Defects involving the WO₄²⁻ tetrahedron are found to be energetically favorable when compared to isolated W and O defects. WO₄²⁻ Frenkel and (2Sc³⁺, 3WO₄²⁻) Schottky defects exhibit formation energies of 1.23 eV and 1.97 eV, respectively and therefore may occur as intrinsic defects in Sc₂(WO₄)₃ at elevated temperatures. WO₄²⁻ vacancy and interstitial migration processes have been simulated by classical Molecular Dynamics simulations. The interstitial defect exhibits a nearly 10 times higher mobility (with a migration energy of 0.68 eV), than the vacancy mechanism (with a slightly higher migration energy of 0.74 eV) and thus should dominate the overall ionic conduction. Still both models reproduce the experimental activation energy (0.67 eV) nearly within experimental uncertainty.     

钪原子的自电离里德伯能级3d4s(1D2)nf2 D3/2,3d4s(1D2)nf2 F5/2和3d4s(1D2)np2 D3/2<

在多通道量子亏损理论框架下,利用相对论多通道理论,分别在冻结实近似和考虑偶极极化下计算钪原子的J^π=(3/2)^-,(5/2)^-的三个收敛于 3d4s(¹D₂)的自电离里德伯系列的能级.对3d4s(¹D₂)np²D_3/2和3d4s(^{1 关键词： 相对论多通道理论 多通道量子亏损理论 电子-电子关联 自电离里德伯系列}     

Optical spectroscopy of Ca3Sc2Si3O12, Ca3Y2Si3O12 and Ca3Lu2Si3O12 doped with Pr

The silicates Ca₃Sc₂Si₃O₁₂, Ca₃Y₂Si₃O₁₂ and Ca₃Lu₂Si₃O₁₂, both undoped and doped with Pr³⁺ ions, have been synthesized by solid-state reaction at high temperature. The luminescence spectroscopy and the excited state dynamics of the materials have been studied upon VUV and X-ray excitation using synchrotron radiation. All doped samples have shown efficient 5d-4f emission upon direct VUV excitation of 5d levels, but only Ca₃Sc₂Si₃O₁₂:Pr³⁺ shows luminescence upon interband VUV or X-ray excitation. The VUV excited emission spectra of Ca₃Y₂Si₃O₁₂:Pr³⁺ and Ca₃Lu₂Si₃O₁₂:Pr³⁺ show features attributed to emission from two distinct sites accommodating the Pr³⁺ dopant. The decay kinetics of the Pr³⁺ 5d-4f emission in Ca₃Sc₂Si₃O₁₂:Pr³⁺ upon VUV excitation across the band gap are characterized by decay times in the range 25-28 ns with no significant rise after the excitation pulse. They appear to be faster upon X-ray irradiation than for VUV excitation. Weak afterglow components are attributed to defect luminescence.     

Cation inter-diffusion between LaMnO3 and LaCoO3 materials

Cation inter-diffusion between polycrystalline LaMnO₃ and LaCoO₃ pellets has been studied at 1373-1673 K in air by electron microprobe analysis. Inter-diffusion coefficients were evaluated by the Boltzman-Matano method from Mn³⁺ to Co³⁺ concentration profiles. The cation inter-diffusion is thermally activated and follows Arrhenius behaviour. The activation energies have been calculated and the mechanism for the B-site cation diffusion in La(Mn,Co)O₃ solid solution suggested. Cation diffusion coefficients in the end members LaMnO₃ and LaCoO₃ were estimated. Cation mobility in LaMnO₃ is higher than in LaCoO₃. It is suggested that higher cation diffusion in LaMnO₃ is due to the specific defect chemistry of this material, caused by the relative stability of manganese in a higher oxidation state (Mn⁴⁺). The results are compared to previous reports on cation diffusion in perovskite oxides.     

High-pressure Raman spectroscopic studies on orthophosphates Ba3(PO4)2 and Sr3(PO4)2

By using diamond anvil cell (DAC), high-pressure Raman spectroscopic studies of orthophosphates Ba₃(PO₄)₂ and Sr₃(PO₄)₂ were carried out up to 30.7 and 30.1 GPa, respectively. No pressure-induced phase transition was found in the studies. A methanol:ethanol:water (16:3:1) mixture was used as pressure medium in DAC, which is expected to exhibit nearly hydrostatic behavior up to about 14.4 GPa at room temperature. The behaviors of the phosphate modes in Ba₃(PO₄)₂ and Sr₃(PO₄)₂ below 14.4 GPa were quantitatively analyzed. The Raman shift of all modes increased linearly and continuously with pressure in Ba₃(PO₄)₂ and Sr₃(PO₄)₂. The pressure coefficients of the phosphate modes in Ba₃(PO₄)₂ range from 2.8179 to 3.4186 cm⁻¹ GPa⁻¹ for ν₃, 2.9609 cm⁻¹ GPa⁻¹ for ν₁, from 0.9855 to 1.8085 cm⁻¹ GPa⁻¹ for ν₄, and 1.4330 cm⁻¹ GPa⁻¹ for ν₂, and the pressure coefficients of the phosphate modes in Sr₃(PO₄)₂ range from 3.4247 to 4.3765 cm⁻¹ GPa⁻¹ for ν₃, 3.7808 cm⁻¹ GPa⁻¹ for ν₁, from 1.1005 to 1.9244 cm⁻¹ GPa⁻¹ for ν₄, and 1.5647 cm⁻¹ GPa⁻¹ for ν₂.