Early stages of laser graphitization of diamond

A mechanism for photographitization of a free diamond surface is proposed. The quantum-kinetic rate of this process is determined. The graphitization rate is close to zero if the activation energy of the graphitization process is taken as being equal to the binding energy of a carbon atom with the surface (i.e. equal to the sublimation energy of a carbon atom). On the contrary, if the activation energy is close to the energy of C–C bonds, the graphitization process may occur at a noticeable rate and be observed under ‘relatively smooth’ experimental conditions. The temperature rise leads to a considerable increase in the graphitization rates. Preliminary experimental data on the low-rate laser ablation of diamond are presented to support the proposed model of photographitization. An early stage of laser-induced graphitization in the bulk of diamond is also considered. It is found that the nucleation of a ‘tiny graphite drop’ is possible in the bulk of the diamond inside the focal area of a laser beam; the ‘graphite drop’ growth causing the appearance of mechanical stresses in the surrounding regions. The maximum size of the graphite drop is determined, which, when exceeded, leads to mechanical damage of the sample and to a change in the mechanism of laser graphitization. An evident mechanical criterion for laser-induced damage of diamond is proposed. Received: 2 October 2002 / Accepted: 5 October 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. E-mail: stvn@stankin.ru     

Line width of an atom laser

We describe the measurement of the line width of an atom laser beam extracted from a Bose–Einstein condensate. Using a novel magnetic resonance imaging technique, we find that the energy width of the atom laser beam is Fourier-limited by the duration of the output-coupling process. Received: 25 July 2002 / Revised version: 28 October 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +41-1/633-1254, E-mail: koehl@iqe.phys.ethz.ch     

Crystal structure, morphology, depth profile of elements and mid-infrared optical constants of ‘mild’ lead telluride film

The characterizations of a so-called ‘mild’ PbTe layer thermal-evaporated from an excess of Te (<1 mol.%) evaporable materials are reported. The results reveal that the film obtained is polycrystalline and has a single-phase NaCl-type PbTe crystal structure. It is also demonstrated that the film has a homogeneous surface morphology and a high degree of homogeneous distribution of Te-rich components along the layer. The study of mid-infrared optical constants of a surface-polished film indicates that the influence of surface scattering on optical properties is very small. Received: 3 July 2002 / Accepted: 7 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/6516-9946, E-mail: lbincome@yahoo.com     

Field emission from single-walled carbon nanotubes aligned on a gold plate using a self-assembly monolayer

Field emission from single-walled carbon nanotubes (SWNTs) aligned on a patterned gold surface is reported. The SWNT emitters were prepared at room temperature by a self-assembly monolayer technique. SWNTs were cut into sub-micron lengths by sonication in an acidic solution. Cut SWNTs were attached to the gold surface by the reaction between the thiol groups and the gold surface. The field-emission measurements showed that the turn-on field was 4.8 V/μm at an emission current density of 10 μA/cm². The current density was 0.5 mA/cm² at 6.6 V/μm. This approach provides a novel route for fabricating CNT-based field-emission displays. Received: 3 May 2002 / Accepted: 6 May 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +82-54/279-8298, E-mail: ce20047@postech.ac.kr     

Property study of Si + -ion-implanted Nd:YVO 4 waveguides

Planar waveguides were formed in Nd:YVO₄ crystals by 3.0-MeV Si⁺-ion implantation at doses of 1×10¹³–1.5×10¹⁵ ions/cm² at room temperature. The effective refractive indices of the waveguide propagation modes were measured by using a prism-coupling method. It was found that the number of the propagation modes is dependent on the doses for the waveguides in Nd:YVO₄. The atom displacement in the near-surface region (about 2 μm beneath the surface) of the Nd:YVO₄ crystal induced by the implantation was simulated by using the TRIM 98 (transport and range of ions in matter) code. The possible reasons for the waveguide formation are discussed in a primary way. Received: 17 July 2002 / Revised version: 20 September 2002 / Published online: 11 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-531-8565167, E-mail: drfchen@sdu.edu.cn     

Influence of storage time on laser cleaning of SiO<Subscript>2</Subscript> on Si

The influence of the ‘storage time’ τ_s on the threshold fluence φ_cl and the efficiency in dry laser cleaning is investigated. τ_s denotes the time between the deposition of particles and the cleaning. As a model system we employed silica spheres with diameters of 500 nm and 1500 nm on commercial silicon wafers and single-pulse KrF excimer laser radiation (τ_FWHM=28 ns). For the 1500-nm silica spheres, φ_cl was found to increase from about 65 mJ/cm² to 125 mJ/cm² for storage times of 4 h and 362 h, respectively. For 500-nm silica spheres the increase in the threshold fluence was less than 20% for storage times up to 386 h. Received: 12 July 2002 / Accepted: 12 July 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. E-mail:dieter.baeurle@jku.at     

Evidence for the existence of an unusual structure in the nanorods of InSb

Motivated by the recent prediction that InSb nanometer-diameter filaments can exhibit exotic physical properties, we have synthesized this material and have characterized the filaments. In this report, we describe the finding of an unusual phase of InSb. This new phase occurs when an InSb filament has a diameter of less than 100 nm. High-resolution X-ray-diffraction studies of InSb filaments, having radii ≅33.0 nm, indicate the InSb crystal lattice to be tetragonal, S.G. I4/mmm, with a unit-cell volume 12 times larger than that of the β-tin phase observed in bulk InSb above 2.0 GPa. The density of an InSb nanorod, as calculated from X-ray-diffraction data, is ∼22% more than that of the zinc-blende phase of InSb at ambient conditions, implying that the nanorod experiences a pressure of ∼2 GPa. In contrast, InSb nanorods with radii ≥50.0 nm are observed to show zinc-blende structure and densities nearly the same as that of the bulk. Received: 6 February 2002 / Accepted: 26 March 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +1-202/767-5301; E-mail: yousuf@seas.gwu.edu     

Large-scale synthesis of crystalline β-SiC nanowires

Large quantities of high-purity crystalline β-SiC nanowires have been synthesized at relatively low temperature via a new simple method, the chemical-vapor-reaction approach, in a home-made graphite reaction cell. A mixture of milled Si and SiC powders and C₃H₆ were employed as the starting materials. The results show that the nanowires with diameters of about 10–35 nm are single crystalline β-SiCwithout any wrapping of amorphous material, and the nanowire axes lie along the 〈111〉 direction. Some unique properties are found in the Raman scattering from the β-SiC nanowires, which are different from previous observations of β-SiC materials. A possible growth mechanism for the β-SiC nanowires is proposed. Received: 27 August 2002 / Accepted: 28 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-29/8491-000, E-mail: zjli-sohu@sohu.com     

Low-threshold field electron emission of Si micro-tip arrays produced by laser ablation

Low-threshold field electron emission (FEE) is reported for periodic arrays of micro-tips produced by laser ablation of Si wafers. The best samples show emission at threshold fields as low as 4–5 V/μm for n-type Si substrates and of 1–2 V/μm for p-doped Si substrates, as measured with a flat-screen technique. Auger electron spectroscopy and X-ray electron spectroscopy reveal island-like deviation of the SiO₂ stoichiometry on the tip surfaces, with lateral dimensions of less than 100 nm. Microscopic studies using a special field-emission STM show that the emission originates from well-conducting regions of sub-micron size. The experimental data suggest FEE from the tip arrays by a geometric field enhancement of both the individual micro-tip and the narrow conducting channels in the tip body. Received: 3 May 2002 / Accepted: 1 July 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +7-095/135-82-34, E-mail: shafeev@kapella.gpi.ru     

Femtosecond study of surface structure and composition and time-resolved spectroscopy in metals

Surface structuring and compositioning in aluminum alloy 2024-T3 were demonstrated using a femtosecond pulse laser. Surface nanostructuring was developed as a function of laser parameters and the surface micrographs of the scanning electron microscopy were characterized as a function of incident laser fluence. Surface compositioning was performed by selectively removing the elements on the surface of the sample. Femtosecond studies of highly excited electrons were performed by a pump–probe technique, and the thermalization time was found to be in a range of 1.5–3 ps, increasing with incident fluence. The time-resolved measurement is well matched to the numerical calculation. Received: 6 September 2001 / Accepted: 18 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +1-405/744-6811, E-mail: dou@okstate.edu     

Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications

Epitaxial (001) aluminum nitride (AlN) thin films on (111) Si substrates are prepared using pulsed-laser deposition. The epitaxial structure of the as-prepared thin films is characterized by checking the X-ray-diffraction θ-2 θ scan and pole-figure, using scanning electron microscopy, infrared radiation (IR) spectroscopy and Raman spectroscopy. The surface acoustic-wave resonance at 345 MHz for a 1.5 μm thick AlN film on a (111) Si substrate is observed using an inter-digital electrode. Received: 18 September 2001 / Accepted: 29 January 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: liujm@nju.edu.cn     

Electron structure and electron dynamics at InSb(111)2×2 semiconductor surface

The conduction band electronic structure and the electron dynamics of the clean InSb(111)2×2 surface have been studied by laser based pump-and-probe photoemission. The results are compared to earlier studies of the InSb(110) surface. It is found that both the energy location and the time dependence of the photoexcited structures are very similar for the two surfaces. This indicates that the dominant part of the photoemission signal in the conduction band region is due to excitations of electrons in the bulk region and that the surface electronic states play a minor role. The fast decay of the excited state, τ∼12 ps, indicates that diffusion of hot electrons into the bulk is an important mechanism. Received: 9 May 2001 / Accepted: 9 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +46-0824/913-1, E-mail: gm@matphys.kth.se     

Photoemission study of clean and c(4×2)-2CO-covered Pt (111) using high-harmonic radiation

An extreme ultraviolet (EUV) laser light source based on high-harmonic generation is presented. Coherent radiation in the photon energy range hν=20–120 eV is produced in the conversion media argon, neon and helium. High-harmonic radiation in the energy range 20–50 eV is applied to investigate photoemission spectra of Pt (111) and CO/Pt (111). In the photoemission spectra of the clean surface, new secondary electron emission structures are found which influence the cross section analysis of the CO states. When taking these Pt resonances into consideration, the 4σ and 5σ CO shape resonances are found at photon energies of 37 eV and 28 eV, respectively. Additionally, a resonance at hν=31 eV is also observed for the CO 1π state, in contrast to formerly published experimental data. Experimental and theoretical data suggest that this resonance is not connected to the well-known shape resonances in the σ-channel. Based on theoretical approaches, it is identified as an autoionization resonance. Received: 8 April 2002 / Accepted: 22 May 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +49-251/833-3604, E-mail: kutzner@uni-muenster.de     

GaN nanotweezers

A new form of GaN nanomaterial (nanotweezers) has been obtained by chemical vapor deposition on an etched cubic MgO (100) plane. The nanotweezers consist of a bottom rod and two arms. The bottom rods have diameters of about 100–150 nm and lengths of about 200–500 nm, on which two arms grow out. The bottoms of the arms are about 40–70 nm and the tops are about 15–30 nm in diameter, and 0.8–1.5 μm in length. X-ray and electron diffractions indicate the nanotweezers are zinc blende gallium nitride. We infer that the fabrication of the GaN nanotweezers is associated with small convex hillocks on the surface of the etched cubic MgO (100) single-crystal substrates and that the nanotweezers grow by a growth mechanism that is similar to vapor-phase heteroepitaxy. Received: 23 April 2002 / Accepted: 25 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-10/8264-9531, E-mail: xlchen@aphy.iphy.ac.cn     

Progress in the understanding of the normal state of the cuprates

Over the last years there has been increasing evidence that the normal state of the cuprates can not be described adequately with individual quasiparticles within Fermi-liquid theory. While the low-lying excitations in the superconducting state are nevertheless possibly of quasiparticle character, this character vanishes with the loss of superconducting phase coherence when going to the normal conducting state. Generally, this normal state is characterized by strong heterogeneity. In real space this manifests in charge and spin ordering, either static or dynamical, the so-called ‘stripes’. The spectral signatures of various models describing this unusual metallic normal state together with less exotic non-Fermi-liquid models, like the marginal Fermi liquid, will be compared to photoemission spectra with high angular and energy resolution and to results obtained by other methods. Received: 19 March 2002 / Accepted: 2 October 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-30/2093-7729, E-mail: christoph.janowitz@physik.hu-berlin.de     

Quantitative measurements of the CH radical in sooting diffusion flames at atmospheric pressure

The potential of Laser Induced Fluorescence detection of the CH radical using C–X (0–0) excitation is investigated in a sooting methane/air diffusion flame at atmospheric pressure. Fluorescence is detected using the very narrow (<0.4 nm) Q-branch of the C–X (0–0) band, which enables the measurement of CH in sooting flames without interference from PAH fluorescence and soot emissions. Absolute concentrations are obtained using Cavity Ring Down Spectroscopy. 1D CH profiles in the sooting zone are recorded using a CCD camera with an excellent signal-to-noise ratio. The C–X (0–0) excitation associated with Q-branch detection is shown to be three times more efficient than the B–X scheme. Received: 4 March 2002 / Revised version: 5 November 2002 / Published online: 5 May 2003 RID="*" ID="*"Corresponding author. Fax: +33-3/2033-6463, E-mail: eric.therssen@univ-lille1.fr     

High-resolution electron microscopy of individual metallofullerene molecules on the dipole orientations in peapods

Electron microscopy with atomic sensitivity enables us to obtain a direct image of the intra-molecular structure of metallofullerenes encapsulated inside single-walled carbon nanotubes. By a comparison of high-resolution images with a simulation to extract the relative atom positions for encaged metal atoms in each molecule, the distribution of the molecular orientations and interactions between adjacent molecules in metallofullerene peapods have been statistically analyzed. The results are suggestive of strong interactions between fullerene–fullerene and fullerene–tube in peapods at room temperature. Received: 10 October 2002 / Accepted: 25 October 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +81-298/61-6310, E-mail: suenaga-kazu@aist.go.jp     

Microchip traps and Bose–Einstein condensation

The article gives an overview of the rapidly evolving field of magnetic microchip traps (also called ‘atom chips’) for neutral atoms. Special attention is given to Bose–Einstein condensation in such traps, to the particular properties of microchip trap potentials, and to practical considerations in their design. Scaling laws are developed, which lead to an estimate of the ultimate confinement that chip traps can provide. Future applications such as integrated atom interferometers are discussed. Received: 28 March 2002 / Published online: 14 May 2002     

Femtosecond-laser-induced nanostructure formed on hard thin films of TiN and DLC

We report observation of nanostructures formed on thin TiN and DLC films that were irradiated by 800- and 267-nm, femtosecond (fs) Ti:sapphire laser pulses at an energy fluence slightly above the ablation threshold. On the ablated thin-film surfaces, the linearly polarized fs pulses produce arrays of fine periodic structures that are almost oriented to the direction perpendicular to the laser polarization, while the circularly polarized light forms fine-dot structures. The size of these surface structures is 1/10–1/5 of the laser wavelength and decreases with a decrease in the laser wavelength. Received: 3 September 2002 / Accepted: 4 September 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +81-778/62-3306, E-mail: yasuma@fukui-nct.ac.jp