用光激开关产生一高功率亚纳秒电脉冲的研究

报道了用全固态绝缘结构研制的横向型半绝缘GaAs光电导开关产生高功率亚纳秒电脉冲的性能和测试结果.8mm电极间隙的开关暗态绝缘强度达30kV.分别用ns,ps和fs激光脉冲触发开关的测试表明,开关输出电磁脉冲无晃动.3mm电极间隙开关的最短电流脉冲上升时间小于200ps,脉宽达亚ns;在偏置电压2000伏,光脉冲宽度8ns,能量1.2mJ的触发条件下,峰值电流达560A.用重复频率为76MHz和108Hz的光脉冲序列触发开关也获得清晰的电流脉冲序列.     

用光激开关产生高功率亚纳秒电脉冲的研究

 报道了用全固态绝缘结构研制的横向型半绝缘GaAs光电导开关产生高功率亚纳秒电脉冲的性能和测试结果。8mm电极间隙的开关暗态绝缘强度达30kV。分别用ns, ps和fs激光脉冲触发开关的测试表明,开关输出电磁脉冲无晃动。3mm电极间隙开关的最短电流脉冲上升时间小于200ps,脉宽达亚ns;在偏置电压2000伏,光脉冲宽度8ns、能量1.2mJ的触发条件下,峰值电流达560A。用重复频率为76MHz和10⁸Hz的光脉冲序列触发开关也获得清晰的电流脉冲序列。     

亚纳秒光脉冲抽运光子晶体光纤产生的瓦级超连续谱

研究了亚纳秒脉冲抽运光子晶体光纤产生高功率超连续谱的机理.采用掺镱锁模光纤激光器产生的脉宽570ps光脉冲,抽运1.8m光子晶体光纤,得到了平均功率为1.15W、光谱覆盖范围为750nm的超连续谱.通过实验和模拟结果的对比和分析,证实了亚纳秒脉冲抽运1.8m PCF产生超连续谱时,调制不稳定性效应起了重要作用.在研究了不同抽运功率下输出的超连续谱变化后,发现随着抽运功率的提高,输出功率也更高且超连续谱覆盖波段也更宽,在瓦级输出功率下依然未达到饱和展宽状态,还有进一步提高功率和展宽光谱的空间.     

可调间隙亚纳秒气体开关的研制

 设计了一种高工作电压、高重复频率的亚纳秒气体开关,该开关由Peaking间隙和Chopping间隙组成,可以将纳秒信号转化为亚纳秒脉冲。开关腔外有两组调节旋钮,分别用来调节Peaking间隙和Chopping间隙,使输入脉冲的前后沿能同时得到锐化。对设计的开关进行的实验研究结果表明：在系统重频5 Hz运行时,开关能稳定输出电压278 kV、脉宽620 ps的脉冲;在系统重频100 Hz运行时,开关能稳定输出电压270 kV、脉宽700 ps的脉冲。     

一种三传输线型亚纳秒脉冲压缩装置

介绍了一种采用三传输线型形成线压缩技术直接产生高功率亚纳秒脉冲的方法。给出了脉冲压缩的理论分析,设计了相应的脉冲压缩装置,并采用Pspice软件建立了电路模型,计算结果显示脉冲压缩装置的功率增益可达到2.25倍,验证了理论分析。基于现有的CKP1000超宽谱脉冲源,建立了完整的脉冲压缩实验系统并展开实验研究,结果表明:脉冲压缩装置在入射脉冲电压220 kV、脉宽5 ns的情况下,可产生峰值电压295 kV,半高宽约800 ps,前沿400 ps的亚纳秒脉冲,脉冲压缩装置的功率增益约为1.8倍,实验结果与理论值基本相符。     

亚纳秒气体开关工作特性

 设计了3种结构的同轴Peaking-Chopping组合型亚纳秒气体开关,以半导体开路开关脉冲源为实验平台,分别对它们的击穿特性进行了实验研究。结果表明：亚纳秒气体开关采用环形组合电极Ⅱ时,可以在1～500 Hz稳定工作,输出前沿400 ps、后沿320 ps、脉冲宽度460 ps和电压129.2 kV的脉冲。开关输出脉冲的前后沿、脉冲宽度和电压幅度与开关间隙、气压和重复频率等因素有关,亚纳秒气体开关在小间隙（1～2 mm）、高气压（约10 MPa）时具有良好的重频特性。在开关气压和输入脉冲幅度不变时,输入脉冲上升沿越快,开关的击穿时延越小,击穿电压越高。     

北京正负电子对撞机同步辐射光脉冲形状的高分辨率测量

用国产BWS-5kII型皮秒扫描相机测量了北京正负电子对撞机(BEPC)上极端相对论性运动正负电子束团产生的同步辐射光脉冲的时间结构、光脉冲长度与电子束流强度以及射频源电压的关系.当负电子束流强度由2mA增加到30mA时,光脉冲长度由220ps增加到670ps;在20mA电子束流强度条件下,射频源电压由250kV增加到500kV时,光脉冲长度在500ps到700ps范围内变化.测量系统的时间分辨率为30ps;时间刻度误差±15%,触发晃动小于±200ps.     

纳秒和亚纳秒光学分幅图像记录系统

提出了一种光学亚纳秒分幅时间多幅数字图像记录系统,能够满足激光飞片和爆磁箍缩等极端条件下,对频率在108~1010Hz的高速摄影需求。介绍了系统的设计方案和工作原理,提出了制约系统指标的关键技术如精密同步、高速高压脉冲源及解决方案。利用后台集中控制加上高精度的延迟单元提供各子系统的精密同步,利用雪崩三极管阵列构造纳秒和亚纳秒级的高压脉冲源驱动电光晶体偏转,利用8位可编程模拟延迟器件DS1023-25和FPGA器件结合获得ps精度的时间延迟。实验获得了幅度4 000 V、前沿小于5 ns的脉冲,任意时长、ps级精度的同步单元,对各子系统的同步协同工作也进行了调试。     

用光电导开关产生稳幅ps量级时间晃动超快电脉冲的研究

报道了用半绝缘GaAs光电导开关产生电压幅值稳定、ps量级时间晃动超快电脉冲的实验结果.分别用ns，ps和 fs激光脉冲触发GaAs光电导开关的结果表明，在低电场偏置下，电极间隙为1 mm的GaAs光电导开关可以产生触发时间晃动小于10 ps、电压幅值变化小于1.2 %、亚ns量级脉冲宽度的稳定超短电脉冲.分析了触发光脉冲能量起伏对光电导开关产生超快电脉冲电压幅值的影响，指出通过控制光电导开关的触发条件和对开关的优化设计，就可以获得电压幅值稳定、时间晃动在ps量级的超快电脉冲. 关键词： 光电导开关 超快电脉冲 电压幅值稳定性 时间晃动     

线框馈电抛物反射面高功率电磁脉冲辐射天线

 研制了一种由高功率宽带模式转换结构、导电线框TEM喇叭馈电结构及抛物反射面构成的天线,用其辐射高功率亚纳秒电磁脉冲。时域测试表明,在半宽为700ps、峰值电压为200kV脉冲激励下,天线的主瓣宽度约为±3.8°,辐射效率约为37%。     

Ultrafast strain-induced current in a GaAs Schottky diode

Picosecond acoustic pulses generated by femtosecond laser excitation of a metal film induce a transient current with subnanosecond rise time in a GaAs/Au Schottky diode. The signal consists of components due to the strain pulse crossing the edge of the depletion layer in the GaAs and also the GaAs/Au interface. A theoretical model is presented for the former and is shown to be in very good agreement with the experiment.     

Dynamics of the spallative ablation of a GaAs surface irradiated by femtosecond laser pulses

The spallation of a nanometer-thick melt layer on a GaAs surface during its ablation by femtosecond laser pulses occurs with subnanosecond delays and lift-off velocities that depend on the laser fluence after its complete thermal (hydrodynamic) expansion/acoustic relaxation. The position of the spall interface in the melt is determined by the depth of the formation of a two-dimensional subsurface layer of nanobubbles (nanofoam), whereas the strongly heated surface layer of the melt above the nanofoam is partially removed in the form of a vapor-drop mixture. At the thermal expansion stage, acoustic reverberations are observed in the melt layer and characterize both the dynamics of an increase in its thickness and the shift of the cavitation region (nanofoam) inside the melt. Moreover, these reverberations can additionally stimulate spallation, promoting cavitation in the completely unloaded melt in the case of passage of a weak rarefaction wave.     

Suppression of Chaotic Generation Caused by the External Optical Feedback in a Laser Diode

It is shown by computer simulation and in experiments that chaotic generation caused by the external optical feedback in a laser diode can be suppressed by means of a delayed optoelectronic feedback controlled by the injection current. The suppression of chaotic generation is realized for an AlGaAs/GaAs laser of the quantum wall structure. In the presence of the external optical feedback provided by the mirror placed at a distance of 1~mm the noise of optical intensity is of the oder of 10 W, the single mode dominates in the spectrum, and its spectral width exceeds 600 MHz. The optoelectronic feedback controlled by the injection current reduces the noise by several times and narrows the generation line width down to 80 MHz.     

多波长飞秒激光激发下GaAs纳米线SHG特性研究

本文基于有限元法研究了直立生长于GaAs衬底的GaAs纳米线的光场响应和光场增强性质. 实验使用多个波长的飞秒激光脉冲激发GaAs纳米线, 测得了较高效率的二次谐波信号, 并首次使用宽带超连续飞秒脉冲 (1000–1300 nm) 在纳米线上获取了宽带、无杂散荧光噪声的二次谐波信号. 这种高效的二次谐波产生过程主要归因于纳米结构引起的局域场增强效应. 本文阐明了GaAs纳米线的二次谐波倍频特性, 这些结果对于其在纳米光学中的光器件、 光集成等领域的进一步研究和实际应用具有很好的参考价值. 关键词： GaAs纳米线 二次谐波 飞秒激光     

Generation of tunable subnanosecond laser pulses with a nitrogen laser pumped dye laser amplifier system

A simple method for generating single tunable subnanosecond dye laser pulses is described. A Rhodamin 6G dye laser is transversely pumped by a subnanosecond UV pulse of a TEA nitrogen laser. The narrowband output of the dye laser is amplified and shortened in a synchronously pumped amplifier. Narrowband pulses with a duration of 30–40 ps (fwhm) and a pulse power of 30 kW are obtained. They are tunable over the range of 580–600 nm.     

自注入式固体Ce~(3+)∶LuLiF_4激光器中紫外亚纳秒脉冲序列的产生

提出一个注入式结构，它可以用在各种脉冲激光器中产生短脉冲序列。在这个结构中，从短腔种子激光器产生单一的亚纳秒脉冲，这个种子脉冲在同一增益介质中被再生放大，直到增益衰减到最小。用一个１０ｎｓ脉冲激光器泵浦固体激光介质Ｃｅ３＋∶ＬｕＬｉＦ４，直接地，被动地产生了紫外亚纳秒脉冲序列。     

氧等离子体处理对GaAs表面单层自组装SiO2纳米球薄膜的影响

二维纳米阵列结构因其重要的光学性能被广泛应用于各类光电子器件。本文对自组装单层SiO2纳米球掩模刻蚀法制备GaAs纳米柱二维阵列结构的关键工艺技术进行了研究。采用旋涂法在GaAs表面制备自组装单层SiO2纳米球,重点研究了GaAs表面氧等离子体亲水处理工艺对纳米球排列特性的影响,获得最佳工艺条件为功率配比100 W+80 W、腔室压力4 Pa、氧气流量20 mL/min、处理时间1200 s,并最终得到排列紧密的大面积单层纳米球薄膜。以单层纳米球为掩模,采用感应耦合等离子体刻蚀技术在GaAs表面制备了纳米柱阵列并测试了其表面光反射谱。测试结果表明,GaAs纳米柱阵列在特定波段的反射率降低至5%,远低于表面无纳米结构的薄膜材料表面高达40%的光反射。分析表明纳米柱可以激发米氏散射共振效应,从而有效降低反射率并提升光吸收。     

Formation of three‐dimensional GaAs microstructures by combination of wet and metal‐assisted chemical etching

Previously, plasma‐enhanced dry etching has been used to generate three‐dimensional GaAs semiconductor structures, however, dry etching induces surface damages that degrade optical properties. Here, we demonstrate the fabrication method forming various types of GaAs microstructures through the combination etching process using the wet‐chemical solution. In this method, a gold (Au)‐pattern is employed as an etching mask to facilitate not only the typical wet etching but also the metal‐assisted chemical etching (MacEtch). High‐aspect‐ratio, tapered GaAs micropillars are produced by using [HF]:[H₂O₂]:[EtOH] as an etching solution, and their taper angle can be tuned by changing the molar ratio of the etching solution. In addition, GaAs microholes are formed when UV light is illuminated during the etching process. Since the wet etching process is free of the surface damage compared to the dry etching process, the GaAs microstructures demonstrated to be well formed here are promising for the applications of III–V optoelectronic devices such as solar cells, laser diodes, and photonic crystal devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoconductive semiconductor switches

Optically activated GaAs switches operated in their high-gain mode are being used or tested for pulsed power applications as diverse as low-impedance, high-current firing sets in munitions; high impedance, low-current Pockels cell or Q-switch drivers for lasers; high-voltage drivers for laser diode arrays; high-voltage, high-current, compact accelerators; and pulsers for ground penetrating radar. This paper will describe the properties of high-gain photoconductive semiconductor switches (PCSS), and how they are used in a variety of pulsed power applications. For firing sets, we have switched up to 7 kA in a very compact package. For driving Q switches, the load is the small (30 pF) capacitance of the Q switch which is charged to 6 kV. We have demonstrated that we can modulate a laser beam with a subnanosecond rise time. Using PCSS, we have demonstrated gain switching a series-connected laser diode array, obtaining an optical output with a peak power of 50 kW and a pulse duration of 100 ps. For accelerators, we are using PCSS to switch a 260 kV, 60 kA Blumlein. A pulser suitable for use in ground-penetrating radar has been demonstrated at 100 kV, 1.3 kA. This paper will describe the specific project requirements and switch parameters in all of these applications, and emphasize the switch research and development that is being pursued to address the important issues     

Bistable optically controlled semiconductor switches in afrequency-agile RF source

The processes of persistent photoconductivity followed by photoquenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a photoconductive switch to be developed that can be closed by the application of one laser pulse (λ=1.06 μm) and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser (λ=2.13 μm). This switch is called the bistable optically controlled semiconductor switch (BOSS). The opening phase of the BOSS requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (~1 MeV). Neutron-irradiated BOSS devices have been opened against a rising average electric field of about 36 kV/cm (18 kV) in a time less than 1 ns while operating at a repetition rate, within a two-pulse burst, of about 1 GHz. The ability to modify the frequency content of the electrical pulses, by varying the time separation, is demonstrated. Results demonstrating the operation of two BOSS devices imbedded in a frequency-agile RF source configuration are also discussed