Interwell excitons in a lateral potential well in an inhomogeneous electric field

The luminescence of interwell excitons in double quantum wells based on GaAs/AlGaAs semiconductor heterostructures (n-i-n structures) in a lateral trap prepared with the use of an inhomogeneous electric field was studied at helium temperatures. A rather strong and inhomogeneous electric field occurred in the depth of the heterostructure when a current passed through the contact between the conducting tip of a tunneling microscope and the heterostructure surface to the bulk region containing a built-in gate. Because of the Stark shift of energy bands in the electric field, the photoexcited electrons and holes are spatially separated in neighboring quantum wells by a tunnel-transparent barrier and are bound into interwell quasi-two-dimensional excitons. These excitons have a dipole moment even in the ground state. Therefore, electrostatic forces in the inhomogeneous electric field cause the excitons to move in the plane of quantum wells toward the maximum field region and eventually accumulate in the lateral trap artificially prepared in such a way. The maximum trap depth achieved through the inhomogeneous electric field was 13.5 meV, and its lateral size was about 10 μm. It is shown that, in the traps prepared in this way, photoexcited interwell excitons behave with increasing concentration at sufficiently low temperatures (T=2K) in the same fashion as in the lateral traps caused by large-scale fluctuations of the random potential. At concentrations exceeding the percolation threshold, the interwell excitons condense into the lowest energy state in the trap.     

Determination of electric transport properties in the pre- and post-breakdown regime ofp-germanium

Conductivity and Hall-effect measurements were performed on single-crystallinep-doped germanium, electrically driven into low-temperature avalanche breakdown via impurity impact ionization. The electric transport properties were determined as a function of the applied electric field in the pre- and post-breakdown regime. The characteristic field dependence of the carrier density, mobility, and drift velocity was found to be reflected in smooth variations of the integral current flow. The breakdown mechanism was demonstrated to involve a mobility which sensitively depends upon the density of the mobile charge carriers. Our experimental findings are qualitatively explained by simple model approaches developed from established breakdown theories.     

Electro-optical trap for dipolar excitons in a GaAs/AlAs Schottky diode with a single quantum well

An electro-optical trap for spatially indirect dipolar excitons has been implemented in a GaAs/AlAs Schottky diode with a 400-Å-wide single quantum well. In the presence of a bias voltage applied to a gate, the trap for excitons appears upon ring illumination of the structure by a continuous-wave or pulsed laser generating hot electron-hole pairs in the quantum well. A barrier for excitons collected inside the illuminated ring appears because of the screening of the applied electric field by nonequilibrium carriers directly in the excitation region. Excitons are collected inside the ring owing to the ambipolar drift of carriers and dipole-dipole exciton repulsion in the optical pump region. For dipolar excitons thus collected in the center of the ring electrooptical trap, a significant narrowing of the luminescence line that accompanies an increase in the density of excitations indicates the collective behavior of dipolar excitons.     

Stabilization of Drift Instabilities of an Inhomogeneous Plasma by Means of an RF Electric Field

The possibility of stabilizing effects that an rf electric field imposes on drift instabilities in an inhomogeneous plasma is investigated. A two-species, nonisothermal plasma, situated in an externally applied static magnetic field is considered with the rf electric field applied in the same direction as the dc magnetic field. The plasma is "mildly" inhomogeneous in density, with a density gradient perpendicular to the confining magnetic field. Using a hydrodynamic model for the plasma it is found that under certain conditions an increase in the frequency of the drift oscillations is obtained as the result of the application of the rf electric field. The increase in the frequency of the drift oscillations results in an increase in the magnitude of the stabilizing term associated with Landau damping which in turn yields a smaller growth rate for the drift instability. Discussions of the state of the plasma for different values of the frequency of the applied electric field are presented and the feasible ranges of values of the above quantity required for stabilization are determined. It is concluded that the resulting stabilization is significant only in a very narrow rf band. Therefore, the application of this technique appears to be a difficult experimental undertaking.     

Analytical models of lateral power devices with arbitrary vertical doping profiles in the drift region

By solving the 2D Poisson's equation, analytical models are proposed to calculate the surface potential and electric field distributions of lateral power devices with arbitrary vertical doping profiles. The vertical and the lateral breakdown voltages are formulized to quantify the breakdown characteristic in completely-depleted and partially-depleted cases. A new reduced surface field (RESURF) criterion which can be used in various drift doping profiles is further derived for obtaining the optimal trade-off between the breakdown voltage and the on-resistance. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of lateral power devices are investigated in detail for the uniform, linear, Gaussian, and some discrete doping profiles along the vertical direction in the drift region. Then, the mentioned vertical doping profiles of these devices with the same geometric parameters are optimized, and the results show that the optimal breakdown voltages and the effective drift doping concentrations of these devices are identical, which are equal to those of the uniform-doped device, respectively. The analytical results of these proposed models are in good agreement with the numerical results and the previous experimental results, confirming the validity of the models presented here.     

Probability distribution of the breakdown electric fields of polymer dielectrics

The probability distribution is derived for the breakdown electric field of polymers, treated as inhomogeneous dielectrics. The extremal distribution and the Weibull distribution are shown to be particular cases of the result found. The experimental results found with low-pressure polyethylene and polyethylene, Styroflex, and polyethylene terephthalate films are consistent with the theoretical probability distribution found for the breakdown electric field.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 49–55, January, 1971.     

漂移区表面阶梯掺杂LDMOS的击穿电压模型

提出表面阶梯掺杂(SD：Step Doping on surface)LDMOS的二维击穿电压模型.基于求解多区二维Poisson方程,获得SD结构表面电场的解析式.借助此模型,研究其结构参数对击穿电压的影响;计算优化漂移区浓度和厚度与结构参数的关系,给出获得最大击穿电压的途径.数值结果,解析结果和试验结果符合较好.漂移区各区和衬底电场相互调制,在漂移区中部产生新的峰值,改善电场分布;高掺杂区位于表面,降低了正向导通电阻.结果表明：SD结构较常规结构击穿电压从192V提高到242V,导通电阻下降33%. 关键词： 阶梯掺杂 模型 优化 调制     

Velocity saturation in short channel field effect transistors

The high electric field transport of short channel MOS transistors has been investigated. Saturation of the electron velocity leads to strong inhomogeneous channel conditions which have to be accounted for by a self consistent analysis of the experimental results. It follows that the saturation value of the drift velocity in the inversion channel is close to the bulk value of 10⁷ cm sec^?1.     

Stark shifts of charged particles in semiconductor quantum wells

 We calculate the effect of a homogeneous electric field on electrons, holes and excitons confined in a quantum well structure consisting of alternate thin layers of well and barrier material. The electric field which acts perpendicular to the quantum well is taken as a perturbation on the quantum well structure confining the charges. The electron and hole energies in the conduction and valence subbands are calculated by solving a one-dimensional Schr?dinger equation. The exciton binding energy is calculated using an improved excitonic model. Results obtained indicate the importance of higher-order excitons in optical transitions at high electric fields. Received: 29 February 1996/Accepted: 19 August 1996     

Modulated exciton spectroscopy

In this paper, the principal results obtained on the modulated excitonic spectra of Cu₂O and CuCl in the presence of an electric field, are reviewed. The behaviour of excitons in the electric field is discussed and compared with the actual theories. A symmetry analysis of the experimental results is performed which gives information about the origin of the optical transitions as well as on the nature of the field effects on the excitons.     

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

A vertical junction barrier Schottky diode with a high-$K$/low-$K$ compound dielectric structure is proposed and optimized to achieve a high breakdown voltage (BV). There is a discontinuity of the electric field at the interface of high-$K$ and low-$K$ layers due to the different dielectric constants of high-$K$ and low-$K$ dielectric layers. A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode (JBS), so the distribution of electric field in JBS becomes more uniform. At the same time, the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-$K$ dielectric layer and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN JBS with a specific on-resistance ($R_{\rm on, sp}$) of 2.07 m$\Omega\cdot$cm$^{2}$ and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure, resulting in a high figure-of-merit (FOM) of 8.6 GW/cm$^{2}$, and a low turn-on voltage of 0.6 V.     

Control of electric field in 4H-SiC UMOSFET: Physical investigation

In this paper, we show how breakdown voltage (V_BR) and the specific on-resistance (R_on) can be improved simply by controlling of the electric field in a power 4H-SiC UMOSFET. The key idea in this work is increasing the uniformity of the electric field profile by inserting a region with a graded doping density (GD region) in the drift region. The doping density of inserted region is decreased gradually from top to bottom, called Graded Doping Region UMOSFET (GDR-UMOSFET). The GD region results in a more uniform electric field profile in comparison with a conventional UMOSFET (C-UMOSFET) and a UMOSFET with an accumulation layer (AL-UMOSFET). This in turn improves breakdown voltage. Using two-dimensional two-carrier simulation, we demonstrate that the GDR-UMOSFET shows higher breakdown voltage and lower specific on-resistance. Our results show the maximum breakdown voltage of 1340 V is obtained for the GDR-UMOSFET with 10 µm drift region length, while at the same drift region length and approximated doping density, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 V and 703 V, respectively.     

On the electron energy distribution in the gas discharge positive column: Langmuir paradox

The results of calculations of electron drift characteristics in a dc spatially inhomogeneous periodic electric field are presented. It is shown that the effect of field inhomogeneities on the drift velocity and the average electron energy is insignificant under typical conditions of experiments with gas-discharge plasma at low gas pressures. However, the intensity of the processes of excitation, ionization, and plasma spatial distribution are strongly affected by the inhomogeneity (variance) and field variation behavior. It is shown that the electric field inhomogeneity in the gas discharge positive column leads to maxwellization of the electron energy distribution function.     

Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

<正>This paper proposes a double epi-layers 4H—SiC junction barrier Schottky rectifier(JBSR) with embedded P layer (EPL) in the drift region.The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process.The electric field and potential distribution are changed due to the buried P-layer,resulting in a high breakdown voltage(BV) and low specific on-resistance(R_(on,sp)).The influences of device parameters,such as the depth of the embedded P+ regions,the space between them and the doping concentration of the drift region,etc.,on BV and R_(on,sp) are investigated by simulations,which provides a particularly useful guideline for the optimal design of the device.The results indicate that BV is increased by 48.5%and Baliga's figure of merit(BFOM) is increased by 67.9%compared to a conventional 4H-SiC JBSR.     

Influence of the formation of hot excitons on the quantum efficiency of short-wavelength photoelectric conversion in III–V semiconductors

A new excitonic mechanism for decreasing the quantum efficiency of the photoelectric conversion process in surface-barrier structures is considered. This mechanism involves the formation of hot excitons which have a large ionization energy and are not subject to the influence of the barrier electric field. The spectral dependence of the hot photocarrier losses is derived in an explicit form from experimental data on the basis of a previously proposed model and is analyzed. This dependence has two segments with abrupt increases, which are caused by the formation of excitons in the L and X valleys of the semiconductor. Fiz. Tverd. Tela (St. Petersburg) 40, 944–945 (May 1998)     

百kV/cm场强下SF6气体开关纳秒脉冲击穿场强和时延经验公式

百kV/cm高场强纳秒脉冲条件下,采用J. C. Martin经验公式估算SF₆气体击穿场强时,估算值与实验结果差异显著。为了进一步指导高场强脉冲气体开关设计,为开关工作状态调节提供依据,借鉴经典击穿场强经验公式形式建立了百kV/cm场强下SF₆气体开关纳秒脉冲击穿场强和时延与实验参数之间的关系,基于实验数据拟合形成了修正系数的击穿场强和时延经验公式。研究表明,百kV/cm场强和纳秒脉冲条件下脉冲电压斜率对开关击穿特性有重要影响,击穿场强与击穿时延相互关联。百ns至μs脉冲与几十ns脉冲气体放电机理的区别引起放电过程中击穿时延组成发生变化,导致了经典击穿场强经验公式估算值与实验结果的显著差异。修正系数的击穿经验公式可为电磁脉冲模拟器输出开关提供更为精确的工程设计依据。     

Theoretical study of indirect excitons’ lifetime in coupled AlGaN/GaN quantum wells in the presence of an electrostatic trap

The lifetime of electrostatically trapped indirect excitons in a field-effect structure based on coupled AlGaN/GaN quantum wells has been theoretically studied. Within the plane of a double quantum well, indirect excitons are trapped between the surfaces of the AlGaN/GaN heterostructures and a semitransparent metallic top gate. The trapping mechanism has been assumed to be a combination of the quantum confined Stark effect and local field enhancement. In order to study the trapped exciton lifetime, the binding energy of indirect excitons in coupled quantum wells is calculated by finite difference method in the presence of an electric field. Thus, the lifetime of trapped excitons is computed as a function of well width, AlGaN barrier width, the position of double quantum well in the device and applied voltage.     

Quantum well excitons in an electric field: two versus three dimensional behavior

Previous calculations have shown a transition between two dimensional and three dimensional behavior of excitons confined in a semiconducting quantum well structure as a function of electric field. We here present calculations of the exciton binding energy as a function of electric field using a two parameter variational wave function of the form used in the absence of the electric field by Matsuura and Shinozuka. Our calculations were performed using a finite potential barrier model for the confinement of the exciton in the quantum well. The results of our calculations confirm the validity of the conclusion that the variational exciton wave function goes from being of a purely 2D hydrogenic type at small well widths and/or low electric fields to a 3D hydrogenic type in wide wells and/or high electric fields.     

电场下GaAs/Ga1-xAlxAs量子阱中的子带和激子

本文利用有限势垒模型,研究电场对GaAs/Ga_1-xAl_xAs量子阱中子带和激子的影响。对阱宽为105?的GaAs/Ga_0.66Al_0.34As量子阱,电场由0—1.2×10⁵V/cm,我们计算了电子和空穴的子带以及激子的结合能。基于上述计算结果,所得电子-空穴重叠函数和激子峰的能量移动与实验测量符合得较好。 关键词：     

高压多脉冲真空间隙击穿实验研究

 在真空间隙击穿机理的理论基础上,设计了高压多脉冲下真空间隙的击穿实验方案,对相同材料的多对电极间隙在高压单脉冲和三脉冲下的真空击穿特性进行了实验研究。实验结果与脉冲下真空间隙的击穿机理相符,对脉冲数量增加对真空间隙宏观击穿场强的影响进行了验证,推断出了决定真空间隙宏观击穿场强的关键因素,并对多脉冲加速间隙最大宏观场强的设计提出了建议。