Coherent structures in wall turbulence and mechanism for drag reduction control

Herein is introduced the mechanism for active control influencing the generation of the near-wall streamwise vortices,which are closely related to the production of high skin friction in wall-bounded turbulent flows.A new opposition control scheme with adjusting control amplitude is proposed and evaluated in turbulent channel flow by direct numerical simulations.The maximum drag reduction rate can be greatly enhanced by the strengthened control.Finally the effectiveness of the control to the coherent structures at high Reynolds numbers is investigated by using a linear transient growth model.     

Structural and electronic characteristics of pure and doped ZnO varistors

We report here the structural,surface morphology,mechanical,and current-voltage characteristics of Zn1-xMxO ceramic samples with various x and M(0.00≤x≤0.20,M=Ni,Cu).It is found that the considered dopants do not influence the well-known peaks related to the wurtzite structure of ZnO ceramics,while the shapes and the sizes of grains are clearly affected.The average crystalline diameters deduced from the SEM micrographs are between 2.06 μm and 4.8 μm for all samples.The oxygen element ratio is increased by both dopants.Interestingly,the potential barrier can be formed by adding Cu up to 0.20,while it is completely deformed by 0.025 Ni addition.The breakdown field can be enhanced up to 4138 V/cm by 0.025 Cu addition,followed by a decrease with further increase of Cu up to 0.20.On the other hand,a gradual decrease in Vickers microhardness is reported for both dopants,and the values in the Ni samples are higher compared to those in the Cu samples.The electrical conductivity is generally improved by Ni,while the addition of Cu improves it only in the over doped region(≥0.10).These results are discussed in terms of the differences of valency and ferromagnetic ordering.     

High Thermoelectric Properties of PbTe Doped with Bi2Te3 and Sb2Te3

The composition-dependent thermoelectric properties of lead telluride (PbTe) doped with bismuth telluride (Bi2Te3), antimony telluride (Sb2Te3) and (BiSb)2Te3 have been studied at room temperature. All the sampies exhibit small thermal conductivity. The figures of merit, 7.63, 1.03 and 8.97 x 10-4, have been obtained in PbTe with these dopants, respectively. These values are several times higher than those of PbTe containing other dopants with small grain sizes. The high thermoelectric performance is explained by electronic topological transition induced by alloying. The results indicate that these dopants are effective to enhance the thermoelectric performance of PbTe.     

INVESTIGATION ON THE MULTIDIMENSIONAL NUCLEAR FISSION DYNAMICS

The expression of multidimensional fission rate with quantum effect at finite temperature has been obtained by menus of the approach of path integral expressed as Fourier series. The covariant form of the fission diffusion equations and the quantities related to it under general coordinate transformations in phase space are studied. The differences between two or three-dimensional and one-dimensional cases are analyzed carefully by using the {c,h,α} parametrization. The realistic Langevin calculations of two-dimensional transient rate are compared with the one-dimensional case and generalized Kramers rate formula.     

A decomposition study of moisture transport divergence for inter-decadal change in East Asia summer rainfall during 1958-2001

In this paper,we report on the results of an investigation into inter-decadal changes in moisture transport and divergence in East Asia for the two periods 1980-2001 and 1958-1979.The aim is to explore the mechanism of summer rainfall change in the region after abrupt changes.The relevant changes are calculated using ERA-40 daily reanalysis datasets.The results show that both stationary and transient eddy moisture transports to the Chinese mainland have declined since the abrupt change in atmospheric general circulation in the late 1970s,leading to more rainfall in South China and less in the North.The anomalous rainfall pattern coincides well with anomalous large-scale moisture divergence in the troposphere,of which stationary-wave or monsoon transport is dominant,in comparison with the contribution of the transient eddies.Furthermore,their divergences are found to be in opposite phases.In addition,meridional divergence is more important than its zonal counterpart,with an opposite phase in East Asia.Abnormal zonal moisture convergences appear in northwestern and northeastern parts of China,and are related to the excess rainfalls in these regions.An increase in transient eddy activity is one of the major mechanisms for excess rainfall in northern Xinjiang.Consequently,the anomalous rainfall pattern in East Asia results from a decline of the East Asian monsoon after the abrupt change,while the rainfall increase in northwestern China involves anomalies of both stationary waves and transient eddies on boreal westerly over the midand high latitudes.     

Phase transition and pitting corrosion behaviour for Mo—implanted aluminium

Molybdenum ions are implanted into aluminium with high ion flux and high dose at elevated temperatures of 200℃, 400℃ and 500℃. Due to the high temperature and high flux of vacancies and interstitial atoms, the atom diffusion and chemical effects are enhanced during the ion implantation. The effects increase with increasing ion flux and dose, so that new phase formation and phase transition emerge noticeably. X-ray diffraction analysis shows that when the aluminium is implanted with Mo ions at a low ion flux (25μA/cm²), the Al₅Mo alloy is formed. The atomic ratio of Mo/Al of the Al₅Mo phase is close to 20%. When the aluminium is implanted with Mo ions at a high ion flux (50μA/cm²), the phase transition from Al₅Mo to Al₁₂Mo appears, and the latter is dominant, which is determined to be the final phase. The ratio of Mo/Al in Al₁₂Mo is 7.7%. Rutherford backscattering spectroscopy indicates also that the Mo/Al atom ratio is ～7% to ～8% in Mo-implanted aluminium. The atomic ratios of the constituents in Al₅Mo and Al₁₂Mo are of stoichiometric composition for these alloys. The thicknesses of the Al₁₂Mo alloy layers for Mo-implanted Al with ion doses of 3×10¹⁷/cm² and 1×10¹⁸/cm² are 550nm and 2000nm, respectively. The pitting corrosion potential V_p increases obviously. It is clear that due to the formation of Al₁₂Mo alloy layer, the pitting corrosion resistance is enhanced.     

Magnetism induced by nonmagnetic dopants in zinc-blende SiC: First-principle calculations

Magnetism induced by the nonmagnetic dopants in the zinc-blende SiC (3C-SiC) is investigated by first-principle calculations. The atoms of the first 20 elements in the periodic table except inert gas are used to replace either Si or C atoms as dopants. We find that some nonmagnetic substitutional dopants (mainly the Group IA, Group IIA, Group IIIB, and Group VIIB elements) prefer the spin-polarized ground states with local magnetic moments. In general, the condition for obtaining the local magnetic moments and the magnetic ground state requires that the dopants are p-type and have large electronegativity difference from the neighboring host atoms. The magnetic moments can be tuned over a range between 1 μ B and 3 μ B by doping with the nonmagnetic elements. The nearest-neighbor exchange couplings J 0 between the local magnetic moments are quite large and the codoping method is proposed to increase the dopant concentration. These imply that the nonmagnetic doping in SiC may exhibit collective magnetism. Moreover, the Group IIA Mg and Ca atoms substituting the preferred Si atoms favor the ferromagnetic ground states with the half-metallic electronic properties, which suggests that Mg or Ca substitutional doping on the Si sites in SiC could be a potential route to fabricating the diluted magnetic semiconductors.     

Dynamic thermal modeling and parameter identification for a monolithic laser diode module

We improved the thermal equivalent-circuit model of the laser diode module(LDM) to evaluate its thermal dynamic properties and calculate the junction temperature of the laser diode with a high accuracy.The thermal parameters and the transient junction temperature of the LDM are modeled and obtained according to the temperature of the thermistor integrated in the module.Our improved thermal model is verified indirectly by monitoring the emission wavelength of the laser diode against gas absorption lines,and several thermal parameters are obtained with the temperature uncertainty of 0.01 K in the thermal dynamic process.     

First principles study of the diffusional phenomena across the clean and Re-doped γ-Ni/γ'-Ni_3Al interface of Ni-based single crystal superalloy

Density functional theory calculations in conjunction with the climbing images nudged elastic band method are conducted to study the diffusion phenomena of the Ni-based single crystal superalloys.We focus our attention on the diffusion processes of the Ni and Al atoms in the γ and γ ' phases along the direction perpendicular to the interface.The diffusion mechanisms and the expressions of the diffusion coefficients are presented.The vacancy formation energies,the migration energies,and the activation energies for the diffusing Ni and Al atoms are estimated,and these quantities display the expected and clear transition zones in the vicinity of the interface of about 3–7(002) layers.The local density-of-states profiles of atoms in each(002) layer in the γ and γ ' phases and the partial density-of-states curves of Re and some of its nearest-neighbor atoms are also presented to explore the electronic effect of the diffusion behavior.     

Pulse collapse and blue-shifted enhanced supercontinuum in a photonic crystal fiber

The blue-shifted supercontinuum generation in a photonic crystal fiber pumped by high peak power femtosecond pulses with a wavelength located in the anomalous dispersion region is investigated experimentally and numerically.The formation of a blue-shifted enhanced supercontinuum due to the pulse collapse is demonstrated.The process of the pulse collapse is measured by using the grating-eliminated no-nonsense observation of ultrafast incident laser light e-fields technique(GRENOUILLE).Numerical simulations in spectral and temporal domains are conducted.The data from the numerical simulations are in good agreement with the experimental results.Our experimental results and numerical simulations show that pulse collapse is the determining factor in the generation of a blue-shifted supercontinuum.     

Modeling of polysilicon diffusion sources during rapid optical annealing

A new model for polysilicon diffusion sources is presented. It considers the following effects: 1) dopant diffusion in grains, in grain boundaries and in the single-crystal silicon substrate, 2) dynamic dopant segregation between grain and grain boundary phases and between the phases of polysilicon and the single-crystal silicon substrate, 3) dynamic dopant activation or clustering in grains and in the single-crystal silicon substrate, 4) dynamic grain growth depending on local grain size and local electron density. These mechanisms with completely different time scales are modeled simultaneously. For the first time this allows the analysis of furnace and rapid optical annealing processes with arbitrary grain growth kinetics even during epitaxial realignment. The advanced model for segregation allows for the effect that dopants in grain boundaries and active dopants in grains as well as in the single-crystal silicon substrate find only a limited number of sites which can be occupied. These limitations are necessary to explain the dopant distributions in polysilicon and in the single-crystal silicon substrate. For the first time the coupling between the concentration of active dopants in grains, between the concentration of dopants in grain boundaries and between the local grain size is shown during doping enhanced grain growth.     

离子辐照对单晶Si中预注入B原子扩散的影响

室温下使用MeV能量级Si,F和O离子对5keV B离子预注入后的n-型单晶Si(100)进行了辐照,应用二次离子质谱仪测试分析了掺杂物B原子的分布剖面及其变化.结果表明,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散.在相同的辐照条件下,Si近表面区域中SiO₂层的存在更有助于限制B原子的瞬间增强扩散.结合卢瑟福沟道背散射分析和DICADA程序计算对实验结果进行了讨论.     

Precipitation of dissolved alkali salts and fullerenes on surfaces of doped porous matter

Standard porcelain samples burnt at different temperatures were doped with LiCl, organo-Li solutions, or with fullerene solution and then dried. The depth profiles of both Li and fullerene were determined. The distributions of the incorporated dopants strongly depend on the samples' porosity. Additional ultrasonic treatment during the diffusion process has a fatal influence on the porcelain structure, resulting in enhanced dopant uptake of the remaining sample. The surface-near shape of the depth profiles is interpreted by solvation, i.e., by precipitation of the dissolved salts or fullerenes in the surface-near zone during the drying process. It is shown that the solvation effect is important only in the case of media with high porosity.     

Promotors,poisons and surfactants: Electronic effects of surface doping on metals

The interaction of adsorbates with metal surfaces is discussed. It is shown that the evanescent charge density produced by occupied sp derived surface states yields a considerable contribution to the Pauli repulsion experienced by adsorbate particles with a closed-shell electronic structure, e.g. rare-gases or molecules such as H₂ or N₂. For rare-gases this results in a reduction of the binding energy in the presence of occupied surface states, for molecules this gives rise to an additional contribution to the dissociation barrier. Suitable surface dopants are able to depopulate surface states and thereby to reduce the dissociation barrier. Such dopants can substantially promote catalytic reactions in which the dissociation from the gas phase or a physisorbed precursor is the rate limiting step. In contrast to closed-shell systems the bonding interaction for metal adsorbates on metal substrates is enhanced by occupied surface states. This leads to an extra diffusion barrier at steps, because the surface state amplitude drops to zero at upper step edges. The additional step-edge barrier, which is a kinetic hindrance for layer-by-layer growth, can be reduced by surface dopants depopulating the corresponding surface state. Such dopants promote layer-by-layer growth and act therefore as surfactants. It is concluded that the effect of promoters in catalysis and of surfactants in metal epitaxy is in part due to the same basic mechanism, namely the depopulation of surface states.     

Effect of ionic polarizability on oxygen diffusion in δ-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> from atomistic simulation

The effect of polarizability of cation dopants on oxygen diffusion in δ-Bi₂O₃ is determined using molecular-dynamics simulation in which the polarizability of the ions is treated within the shell model. It is found that the magnitude of the oxygen polarizability has no affect on diffusion. However, the high cation polarizability, associated with the lone pair of electrons in Bi, is found to be the key to achieving sustained oxygen diffusion. Consistent with earlier experimental results, the oxygen diffusion path is found to be between oxygen equilibrium sites, which are displaced from the 8c oxygen sites of the fluorite lattice.     

Interacting diffusion of two dopants through crystalline silicon

The model for the interacting diffusion of two dopants in silicon is analysed in the limit of high peak concentration of one dopant. Several distinct regions of dopant behaviour are identified, in each of which the governing equations are significantly simpler than the full problem. Of particular practical interest is an interior layer which occurs at the pn junction.     

Non-equilibrium point defect phenomena influencing beryllium and zinc diffusion in GaAs and related compounds

Beryllium and zinc are the main p-type dopants used for the fabrication of devices based on GaAs or related III-V materials. Both elements are substitutionally dissolved on the group III sublattice and diffuse via the kick-out mechanism which involves group III self-interstitials. Non-equilibrium concentrations of these self-interstitials have a strong influence on the diffusivities of Be and Zn with often drastic consequences on device behavior especially if Be or Zn is used to realize narrow base regions in heterojunction bipolar transistors (HBTs). Various situations in which non-equilibrium point defects play a role for Be and Zn diffusion are discussed such as: in-diffusion of these dopants from an outside source, diffusion of grown-in dopants, self-interstitial generation by Fermi level surface pinning of highly n ⁺-doped emitter cap or subcollector layers in HBTs, or recom bination-enhanced beryllium diffusion during device operation. Finally, we will comment on the diffusion behavior of carbon, which is dissolved on the group V sublattice in GaAs, is much less sensitive to non-equilibrium point defect, and, therefore, is increasingly used to replace Be and Zn as p-type dopants.On sabbatical leave from Duke University, School of Engineering, Durham, NC 27706, USA     

First-approximation simulation of dopant diffusion in nanostructured silica optical fibres

The production of arrays of nanoscale particles is of interest for many current scientific endeavours. Established techniques such as lithography are suitable for the task, but come with high equipment costs. An alternative is to use the distribution of glass dopants in a drawn optical fibre to define the nanometre scale pattern. The structures are then revealed by etching the glass with a selective acid. One of the critical factors when working with doped glasses is the effect of dopant diffusion encountered in the manufacturing phase as excessive diffusion will destroy the pattern. To aid in calculating the effects of diffusion, a simulation program was written which models the glass structure under various diffusion conditions likely to be encountered in the fibre production. Outputs of the simulation package are found to correlate well with experimental results. As a demonstration of the nanostructures produced, the etched fibres were employed as surface-enhanced Raman scattering (SERS) substrates.     

钛酸钡基施主掺杂弛豫铁电体介电弥散的唯象分析

弛豫铁电体铁电相变的介电弛豫性涉及外来离子掺杂或原有离子的有序排列, 需要深入理解和有效统一的表征. 针对高浓度施主掺杂在晶粒中产生金属离子缺位, 降低居里温度并引起钛酸钡基铁电材料扩散相变的现象, 分析了高斯型的杂质分布、居里温度分布和金属离子缺位分布的等效对应关系, 得出了在介电常数峰值温区金属离子缺位浓度随温度降低而作用增大的结论, 认为金属离子缺位引起的单极电荷在电场作用下的跳跃运动有可能引起介电弥散和介电损耗. 提出了用‘弛豫度’表征铁电弛豫程度.     

用于高速数据通信的梯度塑料光纤

概述了梯度塑料光纤的开发历史和现状。从应用于高速数据通信的角度 ,介绍了聚甲基丙烯酸甲酯(PMMA)、全氘化和全氟化梯度塑料光纤的损耗、带宽、稳定性和寿命。详细介绍了梯度塑料光纤的损耗光谱和损耗机制 ,介绍了制作梯度塑料光纤的界面凝胶聚合技术和两种扩散法 ,分析了梯度塑料光纤的制作方法同折射率剖面和带宽的关系 ,讨论了梯度塑料光纤的稳定性同掺杂物质的关系。同时介绍了高稳定性梯度塑料光纤的研究进展及今后的发展动向